SiC ceramic ipleyiti / itreyi for 4inch 6inch isibambi wafer for ICP

Inkcazelo emfutshane:

Ipleyiti ye-ceramic ye-SiC yinxalenye ephezulu yokusebenza eyinjineli esuka kwi-Silicon Carbide ephezulu, eyenzelwe ukusetyenziswa kwiindawo ezishushu kakhulu, iikhemikhali, kunye nezomatshini. Iyaziwa ngobulukhuni bayo obukhethekileyo, ukuguquguquka kwe-thermal, kunye nokuxhathisa ukubola, ipleyiti ye-SiC isetyenziswa ngokubanzi njenge-wafer carrier, i-susceptor, okanye icandelo lesakhiwo kwi-semiconductor, i-LED, i-photovoltaic, kunye ne-aerospace industry.

Thumela i-imeyile kuthi

Iimbonakalo

Ipleyiti ye-ceramic ye-SiC Abstract

Ngozinzo olubalaseleyo lwe-thermal ukuya kwi-1600 ° C kunye nokuchasana okugqwesileyo kwiigesi ezisebenzayo kunye neendawo ze-plasma, i-plate ye-SiC iqinisekisa ukusebenza okuhambelanayo ngexesha lokushisa okuphezulu, ukuchithwa kunye neenkqubo zokusabalalisa. I-microstructure yayo exineneyo, engeyiyo i-porous inciphisa ukuveliswa kwamasuntswana, iyenze ibe yinto efanelekileyo kwizicelo ezicocekileyo kakhulu kwi-vacuum okanye iisetingi zegumbi lokucoca.

SiC ceramic plate Isicelo

1. Ukwenziwa kweSemiconductor

Iipleyiti ze-ceramic ze-SiC zisetyenziswa ngokuqhelekileyo njengabathwali be-wafer, i-susceptors, kunye ne-pedestal plates kwisixhobo sokwenza i-semiconductor efana ne-CVD (i-Chemical Vapor Deposition), i-PVD (i-Physical Vapor Deposition), kunye neenkqubo zokubeka. Ukuqhuba kakuhle kwe-thermal kunye nokwandiswa kwe-thermal ephantsi kubavumela ukuba bagcine ukuhanjiswa kweqondo lokushisa okufanayo, okubaluleke kakhulu ekusebenzeni okuchanekileyo kwe-wafer. Ukuchasana kwe-SiC kwiigesi ezitshabalalisayo kunye ne-plasmas kuqinisekisa ukuhlala kwiindawo ezinzima, kunceda ukunciphisa ukungcoliswa kwee-particle kunye nokugcinwa kwezixhobo.

2. Ishishini le-LED - ICP Etching

Kwicandelo lokuvelisa i-LED, iipleyiti ze-SiC zizinto eziphambili kwiinkqubo ze-ICP (Inductively Coupled Plasma) etching systems. Basebenza njengabagcini be-wafer, babonelela ngeqonga elizinzile nelinamandla lokuxhasa isafire okanye i-GaN wafers ngexesha lokusetyenzwa kweplasma. Ukuchasana kwabo kweplasma okugqwesileyo, ukuthambeka komphezulu, kunye nokuzinza komda kunceda ukuqinisekisa ukuchaneka okuphezulu kunye nokufana, okukhokelela ekwandeni kwesivuno kunye nokusebenza kwesixhobo kwiitshiphusi ze-LED.

3. I-Photovoltaics (PV) kunye neSolar Energy

Iipleyiti ze-ceramic ze-SiC zikwasetyenziswa kwimveliso yeeseli zelanga, ngakumbi ngexesha lobushushu obuphezulu be-sintering kunye namanyathelo okubamba. Ukungangeni kwabo kumaqondo obushushu aphakamileyo kunye nokukwazi ukumelana ne-warping kuqinisekisa ukusetyenzwa okungaguqukiyo kwee-wafers zesilicon. Ukongezelela, umngcipheko wabo wokungcoliseka ophantsi ubalulekile ekugcineni ukusebenza kakuhle kweeseli ze-photovoltaic.

SiC ceramic plate Properties

1. Ukomelela koomatshini obukhethekileyo kunye nobulukhuni

Iipleyiti ze-ceramic ze-SiC zibonisa amandla omatshini aphezulu kakhulu, anamandla aqhelekileyo aguquguqukayo adlula i-400 MPa kunye nobunzima beVickers bufikelela ku->2000 HV. Oku kubenza baxhathise kakhulu kwi-mechanical wear, i-abrasion, kunye ne-deformation, iqinisekisa ubomi obude benkonzo naphantsi komthwalo ophezulu okanye ukuphindaphinda ibhayisekile ye-thermal.

2. High Thermal Conductivity

I-SiC ine-thermal conductivity egqwesileyo (ngokuqhelekileyo 120–200 W/m·K), eyivumela ukuba isasaze ngokulinganayo ubushushu kumphezulu wayo. Le propati ibaluleke kakhulu kwiinkqubo ezinje nge-wafer etching, i-deposition, okanye i-sintering, apho ukufana kobushushu kuchaphazela ngokuthe ngqo imveliso kunye nomgangatho.

3. Uzinzo oluPhezulu lweThermal

Ngomgangatho ophezulu wokunyibilika (2700 ° C) kunye ne-coefficient ephantsi yokwandiswa kwe-thermal (4.0 × 10⁻⁶ / K), iipleyiti ze-ceramic ze-SiC zigcina ukuchaneka kwe-dimensional kunye nokunyaniseka kwesakhiwo phantsi kwemijikelezo yokufudumeza ngokukhawuleza kunye nokupholisa. Oku kubenza balungele ukusetyenziswa kwiziko lobushushu obuphezulu, kumagumbi okufunxa, kunye neemeko zeplasma.

Iimpawu zobuGcisa
Isalathiso	Iyunithi	Ixabiso
Igama leMathiriyeli		Ukusabela Sintered Silicon Carbide	Uxinzelelo lweSilicon Carbide engenaxinzelelo	Recrystallized Silicon Carbide
Ukuqamba		I-RBSiC	I-SSiC	R-SiC
Unizi lolwapho kuyiwa khona	g/cm3	3	3.15 ± 0.03	2.60-2,70
Amandla e-Flexural	MPa (kpsi)	338(49)	380(55)	80-90 (20°C) 90-100(1400°C)
Amandla acinezelayo	MPa (kpsi)	1120(158)	3970(560)	> 600
Ukuqina	Knoop	2700	2800	/
Ukuqhawula ukuqina	IMPa m1/2	4.5	4	/
I-Thermal Conductivity	W/mk	95	120	23
I-Coefficient yoKwandiswa kweThermal	10^-6.1/°C	5	4	4.7
Ubushushu obuthile	Joule/g 0k	0.8	0.67	/
Ubushushu obukhulu emoyeni	℃	1200	1500	1600
Imodyuli ye-elastic	Gpa	360	410	240

Ipleyiti ye-ceramic ye-SiC Q&A

Q: Ziziphi iimpawu ze-silicon carbide plate?

A: Iiplati zeSilicon carbide (SiC) ziyaziwa ngamandla abo aphezulu, ukuqina, kunye nokuzinza kwe-thermal. Banikezela nge-conductivity egqwesileyo ye-thermal kunye nokwandiswa kwe-thermal ephantsi, ukuqinisekisa ukusebenza okuthembekileyo phantsi kokushisa okukhulu. I-SiC nayo i-inert yekhemikhali, iyamelana ne-acids, alkalis, kunye ne-plasma, iyenza ibe yinto efanelekileyo kwi-semiconductor kunye ne-LED processing. Umphezulu wayo oxineneyo, ogudileyo unciphisa ukuveliswa kwamasuntswana, ukugcina ukuhambelana kwegumbi elicocekileyo. Iipleyiti ze-SiC zisetyenziswa ngokubanzi njengabathwali be-wafer, i-susceptors, kunye nezixhobo zenkxaso kubushushu obuphezulu kunye neendawo ezinobungozi kuyo yonke i-semiconductor, i-photovoltaic, kunye nemizi-mveliso ye-aerospace.