Izixhobo Zokuphakamisa I-Laser Ze-Semiconductor Ziguqula Ukuncipha Kwe-Ingot

Inkcazo emfutshane:

Isixhobo sokuLinda iLaser seSemiconductor sisisombululo esikhethekileyo semizi-mveliso esenzelwe ukunciphisa ii-ingots ze-semiconductor ngokuchanekileyo nangokungahambelaniyo ngokusebenzisa iindlela zokuLinda ezibangelwa yiLaser. Le nkqubo iphambili idlala indima ebalulekileyo kwiinkqubo zanamhlanje zokuLinda i-semiconductor, ingakumbi ekwenziweni kwee-wafers ezincinci kakhulu ze-elektroniki zamandla aphezulu, ii-LED, kunye nezixhobo ze-RF. Ngokuvumela ukwahlulwa kweeleya ezincinci kwii-ingots ezinkulu okanye ii-substrates zabanikeli, iSemiconductor Laser Lift-Off Equipment iguqula ukunciphisa ii-ingot ngokuphelisa amanyathelo okusarha, ukugaya, kunye nokusika iikhemikhali.


Iimbonakalo

Intshayelelo yeMveliso yeZixhobo zokuPhucula iLaser zeSemiconductor

Isixhobo sokuLinda iLaser seSemiconductor sisisombululo esikhethekileyo semizi-mveliso esenzelwe ukunciphisa ii-ingots ze-semiconductor ngokuchanekileyo nangokungahambelaniyo ngokusebenzisa iindlela zokuLinda ezibangelwa yiLaser. Le nkqubo iphambili idlala indima ebalulekileyo kwiinkqubo zanamhlanje zokuLinda i-semiconductor, ingakumbi ekwenziweni kwee-wafers ezincinci kakhulu ze-elektroniki zamandla aphezulu, ii-LED, kunye nezixhobo ze-RF. Ngokuvumela ukwahlulwa kweeleya ezincinci kwii-ingots ezinkulu okanye ii-substrates zabanikeli, iSemiconductor Laser Lift-Off Equipment iguqula ukunciphisa ii-ingot ngokuphelisa amanyathelo okusarha, ukugaya, kunye nokusika iikhemikhali.

Ukuncitshiswa kwemveli kwee-ingots ze-semiconductor, ezifana ne-gallium nitride (GaN), i-silicon carbide (SiC), kunye ne-sapphire, kudla ngokuba nzima kakhulu, kuyachitha imali, kwaye kulula ukuba kubekho ii-microcracks okanye umonakalo kumphezulu. Ngokwahlukileyo koko, i-Semiconductor Laser Lift-Off Equipment inikezela ngenye indlela engonakalisiyo nechanekileyo enciphisa ukulahleka kwezinto kunye noxinzelelo lomphezulu ngelixa inyusa imveliso. Ixhasa iintlobo ngeentlobo zezinto zekristale kunye nezihlanganisiweyo kwaye ingadityaniswa ngokungenamthungo kwimigca yemveliso ye-front-end okanye ye-midstream semiconductor.

Ngee-wavelengths ze-laser ezinokucwangciswa, iinkqubo zokugxila eziguquguqukayo, kunye nee-wafer chucks ezihambelana ne-vacuum, esi sixhobo sifanelekile kakhulu ekusikeni i-ingot, ekudalweni kwe-lamella, kunye nokususwa kwefilimu encinci kakhulu kwizakhiwo zesixhobo esithe nkqo okanye ukudluliselwa komaleko we-heteroepitaxial.

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Ipharamitha yezixhobo zokuphakamisa i-laser ze-semiconductor

Ubude bamaza I-IR/SHG/THG/FHG
Ububanzi bePulse I-Nanosecond, i-Picosecond, i-Femtosecond
Inkqubo yokubona Inkqubo ye-optical ezinzileyo okanye inkqubo ye-Galvano-optical
Inqanaba le-XY 500 mm × 500 mm
Uluhlu Lokucubungula 160 mm
Isantya sokuhamba Ubuninzi yi-1,000 mm/sec
Ukuphindaphinda ±1 μm okanye ngaphantsi
Ukuchaneka kweSikhundla esipheleleyo: ±5 μm okanye ngaphantsi
Ubungakanani beWafer 2–6 intshi okanye ezenziwe ngokwezifiso
Ulawulo IWindows 10,11 kunye nePLC
I-Voltage yoNikezo lwaMandla I-AC 200 V ±20 V, Isigaba esinye, 50/60 kHz
Ubukhulu bangaphandle 2400 mm (W) × 1700 mm (D) × 2000 mm (H)
Ubunzima 1,000 kg

Umgaqo-nkqubo Wokusebenza Wezixhobo Zokuphakamisa I-Laser Ze-Semiconductor

Indlela eyintloko yeSemiconductor Laser Lift-Off Equipment ixhomekeke ekuqhekekeni kwe-photothermal okanye ekukhutshweni kwe-interface phakathi kwe-donor ingot kunye ne-epitaxial okanye umaleko ojoliswe kuwo. I-UV laser enamandla aphezulu (ngesiqhelo i-KrF kwi-248 nm okanye ii-UV lasers ezisemgangathweni ojikeleze i-355 nm) ijoliswa kusetyenziswa izinto ezibonisa umbane ezibonakalayo okanye ezingabonakaliyo, apho amandla athathwa ngokukhethayo kubunzulu obumiselweyo.

Olu xinzelelo lwamandla olufumaneka kwindawo ethile ludala isigaba segesi esinoxinzelelo oluphezulu okanye umaleko wokwandisa ubushushu kwindawo esebenzisana nayo, oqala ukwahlukana okucocekileyo kwe-wafer ephezulu okanye umaleko wesixhobo ukusuka kwisiseko se-ingot. Inkqubo ilungiswa kakuhle ngokulungelelanisa iiparameter ezifana nobubanzi be-pulse, i-laser fluence, isantya sokuskena, kunye nobunzulu be-z-axis focal. Isiphumo sisilayi esincinci kakhulu—ngokuqhelekileyo kwi-10 ukuya kwi-50 µm—esahlulwe ngokucocekileyo kwi-ingot yomzali ngaphandle kokukrala ngoomatshini.

Le ndlela yokususa i-laser ukuze kuncitshiswe i-ingot ithintela ukulahleka kwe-kerf kunye nomonakalo womphezulu ohambelana nokusarha i-diamond wire okanye ukulepha ngoomatshini. Ikwagcina ubunyani bekristale kwaye inciphisa iimfuno zokupholisha ezisezantsi, okwenza isixhobo seSemiconductor Laser Lift-Off sibe sisixhobo esitshintsha umdlalo kwimveliso ye-wafer yesizukulwana esilandelayo.

Izixhobo Zokuphakamisa I-Laser Ze-Semiconductor Ziguqula I-Ingot Thinning 2

Ukusetyenziswa kwezixhobo zokuphakamisa i-laser ze-semiconductor

Izixhobo zokuPhucula iLaser zeSemiconductor zisetyenziswa kakhulu ekunciphiseni i-ingot kwiindidi ezahlukeneyo zezixhobo eziphambili kunye neentlobo zezixhobo, kubandakanya:

  • Ukunciphisa i-GaN kunye ne-GaAs Ingot kwiZixhobo zoMbane
    Ivumela ukwenziwa kwe-wafer encinci ukuze kubekho ii-transistors zamandla kunye nee-diode ezisebenzayo neziphantsi.

  • Ukubuyiswa kweSiC Substrate kunye noKwahlulwa kweLamella
    Ivumela ukuphakanyiswa kwe-wafer-scale ukusuka kwi-bulk SiC substrates ukuze kusetyenziswe izixhobo ezithe nkqo kunye ne-wafer kwakhona.

  • Ukusikwa kweWafer ye-LED
    Inceda ekuphakamiseni iileya zeGaN kwiingots ezinkulu zesafire ukuze kuveliswe ii-substrates ze-LED ezibhityileyo kakhulu.

  • Ukwenziwa kwezixhobo ze-RF kunye ne-Microwave
    Ixhasa izakhiwo ze-transistor ezisebenzisa i-electron-mobility (HEMT) ezibhityileyo kakhulu ezifunekayo kwiinkqubo ze-5G kunye ne-radar.

  • Ukudluliselwa kweLayer ye-Epitaxial
    Isusa ngokuchanekileyo iileya ze-epitaxial kwii-ingots zekristale ukuze zisetyenziswe kwakhona okanye zidityaniswe kwizakhiwo ze-hetero.

  • Iiseli zelanga zeThin-Film kunye nePhotovoltaics
    Isetyenziselwa ukwahlula iileya ezibhityileyo zokufunxa iiseli zelanga eziguquguqukayo okanye ezisebenzayo kakhulu.

Kwizi candelo nganye kwezi, izixhobo zokuphakamisa i-Laser zeSemiconductor zibonelela ngolawulo olungenakuthelekiswa nanto malunga nokufana kobukhulu, umgangatho womphezulu, kunye nokuthembeka kweleya.

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Iingenelo ze-Ingot Thinning esekwe kwiLaser

  • Ukulahleka kwezinto ezingenanto
    Xa kuthelekiswa neendlela zemveli zokusika i-wafer, inkqubo yelaser iphumela ekusetyenzisweni kwezinto eziphantse zibe yi-100%.

  • Uxinzelelo oluncinci kunye nokugoba
    Ukuphakanyiswa okungachukumisiyo kuphelisa ukungcangcazela koomatshini, kunciphisa ukwakheka kwesaphetha se-wafer kunye nokuqhekeka kwe-microcrack.

  • Ukugcinwa koMgangatho woMphezulu
    Akukho mfuneko yokulapha okanye yokupolisha emva kokuncipha kwiimeko ezininzi, njengoko ukuphakanyiswa nge-laser kugcina umgangatho ophezulu uqinile.

  • Ubungakanani boMbane ophezulu kunye nokuZenzekelayo
    Iyakwazi ukucubungula amakhulu ee-substrates ngokutshintsha nganye ngokulayisha/ukukhulula ngokuzenzekelayo.

  • Iyalungiselelwa Izinto Ezininzi
    Iyahambelana neGaN, iSiC, iSapphire, iGaAs, kunye nezinto ezintsha ze-III-V.

  • Ikhuselekile kwiNdalo
    Inciphisa ukusetyenziswa kwezinto ezirhabaxa kunye neekhemikhali ezirhabaxa eziqhelekileyo kwiinkqubo zokunciphisa ezisekelwe kwi-slurry.

  • Ukusetyenziswa kwakhona kweSubstrate
    Ii-ingots zabanikeli zinokuphinda zisetyenziswe kwimijikelo emininzi yokukhutshelwa ngaphandle, nto leyo enciphisa kakhulu iindleko zezinto zokwakha.

Imibuzo Ebuzwa Rhoqo (FAQ) yezixhobo ze-Semiconductor Laser Lift-Off

  • Q1: Luluphi uluhlu lobukhulu olunokufunyanwa yiSemiconductor Laser Lift-Off Equipment kwiislices zewafer?
    A1:Ubukhulu besilayi obuqhelekileyo buqala kwi-10 µm ukuya kwi-100 µm kuxhomekeke kwizinto ezisetyenzisiweyo kunye nokwakheka kwazo.

    Umbuzo 2: Ngaba esi sixhobo singasetyenziselwa ukucutha ii-ingots ezenziwe ngezinto ezingacacanga ezifana neSiC?
    A2:Ewe. Ngokulungisa ubude be-laser kunye nokwenza ngcono ubunjineli be-interface (umz., ii-interlayers ezingabonakaliyo), nezinto ezingacacanga kangako zinokucutshungulwa.

    Umbuzo 3: Ilungelelaniswa njani i-substrate yomnikeli ngaphambi kokuba kususwe nge-laser?
    A3:Le nkqubo isebenzisa iimodyuli zokulungelelanisa ezisekelwe kwi-sub-micron vision-based kunye nempendulo evela kwiimpawu ze-fiducial kunye ne-scans zokubonakalisa umphezulu.

    Q4: Lingakanani ixesha lomjikelo elilindelekileyo lomsebenzi omnye wokuphakamisa i-laser?
    A4:Ngokuxhomekeke kubukhulu be-wafer kunye nobukhulu bayo, imijikelo eqhelekileyo ihlala ukusuka kwimizuzu emi-2 ukuya kweli-10.

    Umbuzo 5: Ngaba le nkqubo ifuna indawo yokucoca?
    A5:Nangona kungengomfuneko, ukuhlanganiswa kwegumbi lokucoca kuyacetyiswa ukugcina ucoceko lwe-substrate kunye nokuveliswa kwezixhobo ngexesha lemisebenzi echanekileyo.

Ngathi

I-XKH igxile kuphuhliso lobuchwepheshe obuphezulu, imveliso, kunye nokuthengiswa kweglasi ekhethekileyo ye-optical kunye nezixhobo ezintsha zekristale. Iimveliso zethu zibonelela nge-optical electronics, i-consumer electronics, kunye ne-military. Sinikezela nge-Sapphire optical components, ii-mobile phone lens covers, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kunye ne-semiconductor crystal wafers. Ngobuchule obunobuchule kunye nezixhobo eziphambili, sigqwesile ekucutshungulweni kwemveliso okungaqhelekanga, sijolise ekubeni yishishini eliphambili le-optoelectronic materials high-tech.

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