Indlela yeSapphire Crystal Growth Furnace KY Kyropoulos yokwenza iSapphire Wafer kunye neOptical Window Production

Inkcazo emfutshane:

Esi sixhobo sokukhulisa ikristale yesafire sisebenzisa indlela ephambili kwihlabathi liphela yeKyropoulos (KY), eyenzelwe ngokukodwa ukukhula kwekristale enye yesafire enobubanzi obukhulu, enesiphene esiphantsi. Indlela yeKY ivumela ulawulo oluchanekileyo lokutsala kwekristale yembewu, isantya sokujikeleza, kunye nobushushu, okuvumela ukukhula kwekristale yesafire ukuya kuthi ga kwi-intshi ezili-12 (300 mm) ububanzi kubushushu obuphezulu (2000–2200°C). Iinkqubo ze-KY zeXKH zisetyenziswa kakhulu kwimveliso yemizi-mveliso yeewafers zesafire ze-C/A-plane ezingama-2–12-intshi kunye neefestile ze-optical, zifezekisa imveliso yenyanga yeeyunithi ezingama-20. Esi sixhobo sixhasa iinkqubo zokusebenzisa i-doping (umz., i-Cr³⁰ doping yokwenza i-ruby) kwaye inika umgangatho wekristale nge:

Uxinano lokuphuma kwendawo <100/cm²

Uthumelo >85% @ 400–5500 nm

Thumela i-imeyile kuthi

Iimbonakalo

Umgaqo Wokusebenza

Umgaqo ophambili wendlela ye-KY ubandakanya ukunyibilikisa izinto eziluhlaza ze-Al₂O₃ ezicocekileyo kakhulu kwi-tungsten/molybdenum crucible kwi-2050°C. I-seed crystal ithotywa kwi-melt, ilandelwe yi-controlled withdrawal (0.5–10 mm/h) kunye nokujikeleza (0.5–20 rpm) ukuze kufezekiswe ukukhula kwe-α-Al₂O₃ single crystals. Iimpawu eziphambili ziquka:

• Iikristale ezinkulu (ubuninzi. Φ400 mm × 500 mm)
• I-sapphire ye-optical-grade exinezelekileyo ephantsi (ukuphazamiseka kwe-wavefront <λ/8 @ 633 nm)
• Iikristale ezixutyiweyo (umz., iTi³⁰ doping yesafire yenkwenkwezi)

Izinto eziphambili zeNkqubo

1. Inkqubo yokunyibilikisa amaqondo obushushu aphezulu
• I-Tungsten-molybdenum composite crucible (ubushushu obuphezulu. 2300°C)
• Isifudumezi segrafiti esineendawo ezininzi (±0.5°C ulawulo lobushushu)

2. Inkqubo yoKhula kwekristale
• Indlela yokutsala eqhutywa yiServo (± 0.01 mm ukuchaneka)
• Itywina elijikelezayo lolwelo lwemagnethi (ulawulo lwesantya olungenamagxa oluyi-0–30 rpm)

3. Ulawulo lwentsimi yobushushu
• Ulawulo lobushushu oluzimeleyo lweendawo ezi-5 (1800–2200°C)
• Isikhuselo sobushushu esilungisekayo (±2°C/cm i-gradient)
• Inkqubo yokucoca umoya kunye ne-atmosphere
• 10⁻⁴ Pa high vacuum
• Ulawulo lwegesi exutyiweyo ye-Ar/N₂/H₂

4. Ukubeka esweni okukrelekrele
• Ukubeka esweni ubukhulu bekristale ngexesha langempela le-CCD
• Ukufunyanwa kwenqanaba lokunyibilika kwe-multi-spectral

Uthelekiso lweNdlela ye-KY vs. CZ

Ipharamitha	Indlela ye-KY	Indlela ye-CZ
Ubungakanani obukhulu bekristale	Φ400 mm	Φ200 mm
Izinga lokukhula	5–15 mm/h	20–50 mm/h
Uxinano olupheleleyo lweziphene	<100/cm²	500–1000/cm²
Ukusetyenziswa kwamandla	80–120 kWh/kg	50–80 kWh/kg
Izicelo eziqhelekileyo	Iifestile ezibonakalayo/ii-wafer ezinkulu	Izinto zokuhombisa ze-LED/ubucwebe

Izicelo eziphambili

1. Iifestile ze-Optoelectronic
• Iidome ze-IR zomkhosi (ukudluliselwa >85%@3–5 μm)
• Iifestile ze-UV laser (zimelana noxinano lwamandla angama-200 W/cm²)

2. Ii-substrates ze-semiconductor
• Ii-wafer ze-epitaxial ze-GaN (ii-intshi ezi-2–8, i-TTV <10 μm)
• Ii-SOI substrates (uburhabaxa bomphezulu <0.2 nm)

3. Izixhobo ze-elektroniki zabathengi
• Iglasi yekhamera yefowuni (ubulukhuni beMohs 9)
• Izibonisi zeSmartwatch (ukuphuculwa kokuxhathisa ukukrwela nge-10×)

4. Izixhobo ezikhethekileyo
• Ii-IR optics ezicocekileyo kakhulu (i-coefficient yokufunxa <10⁻³ cm⁻¹)
• Iifestile zokujonga i-reactor yenyukliya (ukunyamezela imitha: 10¹⁶ n/cm²)

Iingenelo zeKyropoulos (KY) Sapphire Crystal Growth Equipment

Izixhobo zokukhulisa ikristale yesafire ezisekelwe kwindlela yeKyropoulos (KY) zibonelela ngeenzuzo zobugcisa ezingenakuthelekiswa nanto, zisibeka njengesisombululo esiphambili semveliso yemizi-mveliso. Iingenelo eziphambili ziquka:

1. Ubungakanani obukhulu: Iyakwazi ukukhulisa iikristale zesafire ukuya kuthi ga kwi-intshi ezili-12 (300 mm) ububanzi, nto leyo evumela ukuveliswa kwee-wafers kunye nezinto ezibonakalayo ezivelisa imveliso ephezulu kwizicelo eziphambili ezifana ne-GaN epitaxy kunye neefestile zodidi lwezempi.

2. Uxinano oluPhantsi kakhulu lweZiphene: Ifikelela kuxinano oluphumayo <100/cm² ngoyilo olucwangcisiweyo lwentsimi yobushushu kunye nolawulo oluchanekileyo lwe-gradient yobushushu, iqinisekisa ukuthembeka okuphezulu kwekristale kwizixhobo ze-optoelectronic.

3. Ukusebenza Kokukhanya Okusemgangathweni Ophezulu: Inika uthumelo olungaphezulu kwama-85% olubonakalayo kwiispectra ze-infrared (400–5500 nm), olubalulekileyo kwiifestile ze-UV laser kunye ne-infrared optics.

4. I-Advanced Automation: Iquka iindlela zokutsala eziqhutywa yi-servo (± 0.01 mm ngokuchanekileyo) kunye nezitywino ezijikelezayo zolwelo lwemagnethi (0–30 rpm stepless control), ukunciphisa ukungenelela komntu kunye nokuphucula ukuhambelana.

5. Iinketho ze-Doping eziguquguqukayo: Ixhasa ukwenziwa ngokwezifiso ngee-dopants ezifana ne-Cr³⁰ (ye-ruby) kunye ne-Ti³⁰ (ye-star sapphire), elungiselela iimarike ezikhethekileyo ze-optoelectronics kunye nobucwebe.

6. Ukonga Amandla: Ubushushu obuphuculweyo (i-tungsten-molybdenum crucible) kunciphisa ukusetyenziswa kwamandla ukuya kwi-80–120 kWh/kg, kukhuphisana nezinye iindlela zokukhulisa.

7. Imveliso Enokukhuliswa: Ifikelela kwimveliso yenyanga ye-5,000+ wafers ngamaxesha okujikeleza ngokukhawuleza (iintsuku ezi-8-10 kwiikristale ezingama-30-40 kg), eziqinisekiswe ziindawo ezingaphezu kwama-200 zehlabathi.
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8. Ukuqina Kwezinga Lomkhosi: Ibandakanya uyilo olumelana nemitha kunye nezixhobo ezimelana nobushushu (ezimelana ne-10¹⁶ n/cm²), eziyimfuneko kwizixhobo zeenqwelo-moya kunye nezenyukliya.
Ezi zinto zintsha ziqinisa indlela ye-KY njengomgangatho wegolide wokuvelisa iikristale zesafire ezisebenza kakuhle, nto leyo eqhuba inkqubela phambili kunxibelelwano lwe-5G, i-quantum computing, kunye netekhnoloji yokuzikhusela.

Iinkonzo ze-XKH

I-XKH ibonelela ngezisombululo ezibanzi ze-turnkey zeenkqubo zokukhula kwekristale yesafire, ezibandakanya ukufakelwa, ukulungiswa kwenkqubo, kunye noqeqesho lwabasebenzi ukuqinisekisa ukuhlanganiswa kokusebenza okungenamthungo. Sinikezela ngeendlela zokupheka zokukhula eziqinisekisiweyo kwangaphambili (50+) ezilungiselelwe iimfuno ezahlukeneyo zoshishino, nto leyo enciphisa kakhulu ixesha lophando nophuhliso kubathengi. Kwizicelo ezikhethekileyo, iinkonzo zophuhliso oluqhelekileyo zivumela ukwenziwa ngokwezifiso kwe-cavity (Φ200–400 mm) kunye neenkqubo ze-doping eziphambili (Cr/Ti/Ni), ezixhasa izixhobo ze-optical ezisebenzayo kakhulu kunye nezinto ezichasene nemitha.

Iinkonzo ezongezelelekileyo ziquka ukucutshungulwa emva kokukhula okufana nokusika, ukugaya, kunye nokupolisha, okuxhaswa luluhlu olupheleleyo lweemveliso zesafire ezifana neewafers, iityhubhu, kunye neebhloko zamatye anqabileyo. Ezi zibonelelo zibonelela ngamacandelo ukusuka kwi-elektroniki yabathengi ukuya kwi-aerospace. Inkxaso yethu yobugcisa iqinisekisa iwaranti yeenyanga ezingama-24 kunye nokuxilongwa okukude ngexesha langempela, ukuqinisekisa ukuba akukho xesha lininzi lokungasebenzi kunye nokusebenza kakuhle kwemveliso okuqhubekayo.