Iimveliso
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I-GaAs yamandla aphezulu e-epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yonyango lwelaser
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I-GaAs laser epitaxial wafer 4 intshi 6 intshi yeVCSEL ethe nkqo emngxunyeni womphezulu welaser wavelength 940nm indawo enye
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I-InGaAs epitaxial wafer substrate PD Array photodetector arrays ingasetyenziselwa iLiDAR
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2inch 3inch 4inch InP epitaxial wafer substrate APD isitofu sokukhanya sonxibelelwano lwefiber optic okanye iLiDAR
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I-Sapphire hair transplant blade ubunzima obuphezulu bokumelana nomhlwa isixhobo sonyango sinokusetyenziswa kubuhle bezonyango
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I-Sapphire blade yokufakelwa kweenwele 0.8mm 1.0mm 1.2mm Ukuqina okuphezulu kokunganyangeki kunye nokumelana nomhlwa
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I-Sapphire optical fiber Al2O3 enye ikristale ecacileyo intambo yekristale intambo yonxibelelwano yonxibelelwano lwefiber 25-500um
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ityhubhu yeSapphire elubala oluphezulu 1inch 2inch 3intshi yesiko yeglasi ubude ityhubhu 10-800 mm 99.999% AL2O3 ukucoceka okuphezulu
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ISapphire Prism Sapphire Lens High transparency Al2O3 BK7 JGS1 JGS2 Material Optical Instrument
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ISapphire ingot dia 4inch×80mm Monocrystalline Al2O3 99.999% iCrystal enye
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Iringi yesafire yonke-isafire eyenziwe ngokupheleleyo ukusuka kwisafire Ukungafihli nto ilebhu eyenziwe ngezinto zesafire
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SiC substrate 3inch 350um ubukhulu HPSI uhlobo Prime Grade Dummy ibakala