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uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD

Uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD Umfanekiso obonisiweyo
  • uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD
  • uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD
  • uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD
  • uhlobo lwe-p 4H/6H-P 3C-N Uhlobo lwe-SIC substrate 4inch 〈111〉± 0.5°Zero MPD

Inkcazo emfutshane:

I-substrate ye-P-type 4H/6H-P 3C-N yohlobo lwe-SiC, eyi-intshi ezi-4 ene-orientation ye-〈111〉± 0.5° kunye ne-Zero MPD (Micro Pipe Defect), sisixhobo se-semiconductor esisebenza kakuhle esenzelwe ukwenziwa kwezixhobo ze-elektroniki eziphucukileyo. Eyaziwa ngokuqhuba kwayo kakuhle kobushushu, i-voltage ephezulu yokuqhekeka, kunye nokumelana okunamandla kumaqondo obushushu aphezulu kunye nokugqwala, le substrate ifanelekile kwi-electronics zamandla kunye nezicelo ze-RF. I-Zero MPD grade iqinisekisa iziphene ezincinci, iqinisekisa ukuthembeka kunye nozinzo kwizixhobo ezisebenza kakuhle. I-orientation yayo echanekileyo ye-〈111〉± 0.5° ivumela ukulungelelaniswa ngokuchanekileyo ngexesha lokwenziwa, okwenza ifaneleke kwiinkqubo zokuvelisa ezinkulu. Le substrate isetyenziswa kakhulu kwizixhobo ze-elektroniki ezisebenza ngamaqondo obushushu aphezulu, ii-voltage eziphezulu, kunye ne-frequency ephezulu, ezifana nee-power converters, ii-inverters, kunye neenxalenye ze-RF.


Iimbonakalo

I-4H/6H-P Uhlobo lwe-SiC Composite Substrates Itheyibhile yepharamitha eqhelekileyo

4 ububanzi be-intshiIsiseko seCarbide (SiC) Inkcazo

 

Ibanga Imveliso ye-MPD engekhoyo

Ibanga (Z) Ibanga)

 Imveliso Esemgangathweni

Ibanga (P) Ibanga)

  

Ibanga elingeyonyani (D Ibanga)
Ububanzi 99.5 mm~100.0 mm
Ubukhulu 350 μm ± 25 μm
Uqeqesho lweWafer I-axis engaphandle: 2.0°-4.0°ukuya [11]2(-)0] ± 0.5° kwi-4H/6H-P, Oi-n axis:〈111〉± 0.5° ye-3C-N
Uxinano lweeMipayipi ezincinci 0 cm-2
Ukuxhathisa uhlobo lwe-p 4H/6H-P ≤0.1 Ωꞏcm ≤0.3 Ωꞏcm
uhlobo lwe-n 3C-N ≤0.8 mΩꞏcm ≤1 m Ωꞏcm
Uqhelaniso oluPhambili oluSicaba 4H/6H-P -

{1010} ± 5.0°
3C-N -

{110} ± 5.0°
Ubude obuPhambili obuSicaba 32.5 mm ± 2.0 mm
Ubude obuSicaba beSibini 18.0 mm ± 2.0 mm
Ulwazelelelo lweSibini oluSicaba I-silicon ijonge phezulu: 90° CW. ukusuka kwiPrime flat±5.0°
Ukukhutshwa komda 3 mm 6 mm
I-LTV/TTV/Isaphetha/I-Warp ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm ≤10 μm/≤15 μm/≤25 μm/≤40 μm
Uburhabaxa I-Polish Ra≤1 nm
I-CMP Ra≤0.2 nm I-Ra≤0.5 nm
Iimfanta zoMphetho ngokukhanya okuphezulu Akukho nanye Ubude obuqokelelweyo ≤ 10 mm, ubude obunye ≤2 mm
Iipleyiti zeHex Ngokukhanya Okuphezulu Kobungqingqwa Indawo eqokelelweyo ≤0.05% Indawo eqokelelweyo ≤0.1%
Iindawo zePolytype Ngokukhanya Okuphezulu Akukho nanye Indawo eqokelelweyo≤3%
Izinto ezibandakanyiweyo zeCarbon ezibonakalayo Indawo eqokelelweyo ≤0.05% Indawo eqokelelweyo ≤3%
Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu Akukho nanye Ubude obuqokelelweyo ≤1 × ububanzi besitya esisicaba
Iitships zomphetho eziphezulu ngokukhanya okunamandla Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥0.2mm 5 zivumelekile, ≤1 mm nganye
Ukungcoliswa komphezulu weSilicon Ngumandla aphezulu Akukho nanye
Ukupakisha Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye

Amanqaku:

※Imida yeziphene isebenza kumphezulu we-wafer yonke ngaphandle kwendawo engafakwanga umphetho. # Imikrwelo mayijongwe ebusweni be-Si kuphela.

I-substrate ye-P-type 4H/6H-P 3C-N ye-4-intshi SiC ene-〈111〉± 0.5° orientation kunye ne-Zero MPD grade isetyenziswa kakhulu kwizicelo ze-elektroniki ezisebenzayo kakhulu. Ukuqhuba kwayo okugqwesileyo kobushushu kunye ne-voltage ephezulu yokuqhekeka kwenza ukuba ilungele ii-elektroniki zamandla, ezifana neeswitshi ze-voltage ephezulu, ii-inverters, kunye nee-power converters, ezisebenza kwiimeko ezigqithisileyo. Ukongeza, ukumelana kwe-substrate kumaqondo obushushu aphezulu kunye nokugqwala kuqinisekisa ukusebenza okuzinzileyo kwiindawo ezinzima. Ukujongwa okuchanekileyo kwe-〈111〉± 0.5° kuphucula ukuchaneka kokuvelisa, okwenza ifaneleke kwizixhobo ze-RF kunye nezicelo ze-frequency ephezulu, njengeenkqubo ze-radar kunye nezixhobo zonxibelelwano ezingenazingcingo.

Iingenelo ze-substrates ze-N-type SiC ezidityanisiweyo ziquka:

1. Ukuqhuba Ubushushu Obuphezulu: Ukusasazwa kobushushu okusebenzayo, okwenza ukuba kuhambelane neendawo ezinobushushu obuphezulu kunye nokusetyenziswa kwamandla aphezulu.
2. I-Voltage Ephantsi Kokuphazamiseka: Iqinisekisa ukusebenza okuthembekileyo kwizicelo ze-voltage ephezulu ezifana nee-power converters kunye nee-inverters.
3. I-Zero MPD (Micro Pipe Defect) Grade: Iqinisekisa iziphene ezincinci, inika uzinzo kunye nokuthembeka okuphezulu kwizixhobo ze-elektroniki ezibalulekileyo.
4. Ukumelana nokugqwala: Ihlala ixesha elide kwiindawo ezinzima, iqinisekisa ukusebenza ixesha elide kwiimeko ezinzima.
5. Ukuqhelaniswa okuchanekileyo 〈111〉± 0.5°: Kuvumela ukulungelelaniswa okuchanekileyo ngexesha lokwenziwa, kuphucula ukusebenza kwesixhobo kwizicelo ze-frequency ephezulu kunye ne-RF.

 

Lilonke, i-substrate ye-P-type 4H/6H-P 3C-N ye-4-intshi ye-SiC ene-〈111〉± 0.5° orientation kunye ne-Zero MPD grade zizinto ezisebenzayo eziphezulu ezifanelekileyo kwizicelo ze-elektroniki eziphambili. Ukuqhuba kwayo okuhle kakhulu kobushushu kunye ne-voltage ephezulu yokuqhekeka kwenza ukuba ifaneleke kwi-electronics zamandla ezifana nee-switches ze-voltage ephezulu, ii-inverters, kunye nee-converters. I-Zero MPD grade iqinisekisa iziphene ezincinci, inika ukuthembeka kunye nozinzo kwizixhobo ezibalulekileyo. Ukongeza, ukumelana kwe-substrate nokugqwala kunye namaqondo obushushu aphezulu kuqinisekisa ukuqina kwiindawo ezinzima. Ukujongwa okuchanekileyo kwe-〈111〉± 0.5° kuvumela ukulungelelaniswa okuchanekileyo ngexesha lokwenziwa, okwenza ifaneleke kakhulu kwizixhobo ze-RF kunye nezicelo ze-frequency ephezulu.

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