p-uhlobo 4H/6H-P 3C-N UHLOBO I-SIC substrate 4inch 〈111〉± 0.5°Zero MPD

Inkcazelo emfutshane:

Uhlobo lwe-P-uhlobo lwe-4H/6H-P 3C-N uhlobo lwe-SiC substrate, i-4-intshi ene-〈111〉± 0.5 ° orientation kunye nebakala le-Zero MPD (Isiphene seMicro Pipe), yimathiriyeli ye-semiconductor ephezulu yokusebenza eyenzelwe isixhobo sombane esiphucukileyo. imveliso. Iyaziwa ngokuba yi-thermal conductivity egqwesileyo, amandla ombane aphezulu wokuqhekeka, kunye nokuxhathisa okuqinileyo kumaqondo obushushu aphezulu kunye nomhlwa, le substrate ifanelekile kumbane wombane kunye nosetyenziso lweRF. Umgangatho we-Zero MPD uqinisekisa iziphene ezincinci, uqinisekisa ukuthembeka kunye nokuzinza kwizixhobo zokusebenza eziphezulu. Ukuchaneka kwayo 〈111〉± 0.5 ° ukuqhelaniswa kuvumela ulungelelwaniso oluchanekileyo ngexesha lokwenziwa kwemveliso, iyenze ilungele iinkqubo ezinkulu zokuvelisa. Le substrate isetyenziswa ngokubanzi kubushushu obuphezulu, i-high-voltage, kunye nezixhobo zombane ezisebenza ngamaza aphezulu, ezifana neziguquli zamandla, ii-inverters, kunye namacandelo e-RF.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-4H / 6H-P Uhlobo lwe-SiC Composite Substrates Itheyibhile yepharamitha eqhelekileyo

4 intshi ubukhulu SiliconI-Carbide (SiC) Substrate Inkcazo

IBanga			Zero MPD Production IBanga (Z Ibanga)	Imveliso esemgangathweni IBanga (P Ibanga)	IBanga leDummy (D Ibanga)
Ububanzi			99.5 mm~100.0 mm
Ukutyeba			350 μm ± 25 μm
I-Wafer Orientation			Ngaphandle kwe-axis: 2.0 ° -4.0 ° ukuya [112(-)0] ± 0.5 ° ku-4H/6H-P, Oi-axis: 〈111〉± 0.5 ° ye-3C-N
Ukuxinana kweMibhobho			0 cm-2
Ukuxhathisa	p-uhlobo 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-uhlobo 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Ukuqhelaniswa neFlethi okuPhambili		4H/6H-P	- {1010} ± 5.0°
		3C-N	- {110} ± 5.0°
Ubude beFlethi obuPhambili			32.5 mm ± 2.0 mm
Ubude beFlethi yesibini			18.0 mm ± 2.0 mm
Ukuqhelaniswa neFlethi yesibini			Ubuso beSilicon phezulu: 90° CW. ukusuka kwiflethi yePrime±5.0 °
Ukungabandakanywa kuMda			3 mm		6 mm
LTV/TTV/Saphetha/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Uburhabaxa			IsiPolish Ra≤1 nm
			I-CMP Ra≤0.2 nm		Ra≤0.5 nm
I-Edge Cracks ngokuKhanya okuPhakamileyo			Akukho nanye		Ubude obongezelekayo ≤ 10 mm, ubude obunye≤2 mm
Iipleyiti zeHex ngokuKhanya okuPhakamileyo			Indawo eyongezelekayo ≤0.05%		Indawo eyongezelekayo ≤0.1%
Iindawo zePolytype NgokuKhanya okuPhakamileyo			Akukho nanye		Indawo eyongezelekayo≤3%
Ukubandakanywa kweCarbon ebonakalayo			Indawo eyongezelekayo ≤0.05%		Indawo eyongezelekayo ≤3%
I-Silicon Surface Scratches ngokuKhanya okuPhakamileyo			Akukho nanye		Ubude obongezelekayo≤1×i-wafer idayamitha
I-Edge Chips iPhezulu ngokuKhanya okuNgamandla			Akukho kuvunyelweyo ≥0.2mm ububanzi nobunzulu		I-5 ivunyelwe, ≤1 mm nganye
Ungcoliseko lweSilicon Surface ngoBunzulu obuPhezulu			Akukho nanye
Ukupakishwa			Iikhasethi ezininzi zewafer okanye iSingle Wafer Container

Amanqaku:

※Imida yeziphene isebenza kuwo wonke umphezulu wewafer ngaphandle kwendawo esecaleni yomphetho. # Imikrwelo kufuneka ijongwe kuSi face kuphela.

I-P-uhlobo lwe-4H / 6H-P 3C-N uhlobo lwe-4-intshi ye-SiC substrate ene-〈111〉± 0.5 ° i-orientation kunye ne-Zero MPD grade isetyenziswa ngokubanzi kwizicelo ze-elektroniki eziphezulu. Ukuqhuba kakuhle kwe-thermal kunye ne-voltage ephezulu yokuphuka kuyenza ibe yinto efanelekileyo kumbane wamandla, njengokutshintsha kwe-voltage ephezulu, ii-inverters, kunye neziguquli zamandla, ezisebenza kwiimeko ezinzima. Ukongezelela, ukuchasana kwe-substrate kumaqondo aphezulu kunye nokugqwala kuqinisekisa ukusebenza okuzinzileyo kwiindawo ezinzima. Ulungelelwaniso oluchanekileyo 〈111〉± 0.5° luphucula ukuchaneka kokwenziwa kwemveliso, kuyenza ifaneleke izixhobo zeRF kunye nosetyenziso oluhamba rhoqo, olufana neenkqubo zeradar kunye nezixhobo zonxibelelwano ezingenazingcingo.

Uncedo lwe-N-uhlobo lwe-SiC composite substrates ziquka:

1. I-High Thermal Conductivity: Ukutshatyalaliswa kokushisa okusebenzayo, okwenza kube yinto efanelekileyo kwiindawo eziphezulu zokushisa kunye nokusetyenziswa kwamandla aphezulu.
2. I-Voltage Breakdown High: Iqinisekisa ukusebenza okuthembekileyo kwizicelo eziphezulu ze-voltage ezifana nabaguquli bamandla kunye nabaguquli.
3. I-Zero MPD (i-Micro Pipe Defect) IBakala: Iqinisekisa iziphene ezincinci, inika uzinzo kunye nokuthembeka okuphezulu kwizixhobo ze-elektroniki ezibalulekileyo.
4. I-Corrosion Resistance: Ihlala ixesha elide kwiimeko ezinzima, ukuqinisekisa ukusebenza kwexesha elide kwiimeko ezinzima.
5. Ngokuchanekileyo 〈111〉± 0.5° Ukuqhelaniswa: Ivumela ulungelelwaniso oluchanekileyo ngexesha lokwenziwa, ukuphucula ukusebenza kwesixhobo kwi-high-frequency kunye ne-RF applications.

Ngokubanzi, i-P-uhlobo lwe-4H / 6H-P 3C-N uhlobo lwe-4-intshi ye-SiC substrate ene-〈111〉± 0.5 ° i-orientation kunye ne-Zero MPD ibakala yinto ephezulu yokusebenza efanelekileyo kwizicelo ze-elektroniki eziphambili. Ukuqhuba kakuhle kwe-thermal kunye ne-voltage ephezulu yokuqhekeka kuyenza igqibelele kumbane wamandla afana nokutshintsha kwevoltage ephezulu, ii-inverters, kunye neziguquli. Ibanga leZero MPD liqinisekisa iziphene ezincinci, ukubonelela ngokuthembeka kunye nokuzinza kwizixhobo ezibalulekileyo. Ukongezelela, ukuxhathisa kwe-substrate kwi-corrosion kunye namaqondo aphezulu okushisa kuqinisekisa ukuqina kwiindawo ezinzima. Ulungelelwaniso oluchanekileyo 〈111〉± 0.5° luvumela ulungelelwaniso oluchanekileyo ngexesha lokwenziwa kwemveliso, nto leyo eyenza ukuba ifaneleke kakhulu izixhobo zeRF kunye nosetyenziso lwefrikhwensi ephezulu.