I-InGaAs epitaxial wafer substrate PD Array photodetector arrays ingasetyenziselwa iLiDAR
Iimpawu eziphambili zephepha le-InGaAs laser epitaxial ziquka
1. Ukudibanisa ilathisi: Ukudibanisa ilathisi kakuhle kunokufezekiswa phakathi kwe-InGaAs epitaxial layer kunye ne-InP okanye i-GaAs substrate, ngaloo ndlela kunciphisa uxinano lwesiphako se-epitaxial layer kunye nokuphucula ukusebenza kwesixhobo.
2. Isithuba sebhendi esilungisekayo: Isithuba sebhendi sezinto ze-InGaAs sinokufikelelwa ngokulungelelanisa umlinganiselo wezinto ze-In kunye ne-Ga, nto leyo eyenza iphepha le-InGaAs epitaxial libe noluhlu olubanzi lwamathuba okusetyenziswa kwizixhobo ze-optoelectronic.
3. I-photosensitive ephezulu: Ifilimu ye-InGaAs epitaxial inovakalelo oluphezulu ekukhanyeni, nto leyo eyenza ukuba ibe kwicandelo lokufumanisa i-photoelectric, unxibelelwano lwe-optical kunye nezinye izibonelelo ezikhethekileyo.
4. Uzinzo lobushushu obuphezulu: Ulwakhiwo lwe-InGaAs/InP epitaxial luzinzo lobushushu obuphezulu oluhle kakhulu, kwaye lunokugcina ukusebenza kwesixhobo kuzinzile kubushushu obuphezulu.
Iindlela eziphambili zokusetyenziswa kweethebhulethi ze-InGaAs laser epitaxial ziquka
1. Izixhobo ze-Optoelectronic: Iitablethi ze-InGaAs epitaxial zingasetyenziselwa ukwenza ii-photodiode, ii-photodetectors kunye nezinye izixhobo ze-optoelectronic, ezinezicelo ezahlukeneyo kunxibelelwano lwe-optical, umbono wasebusuku kunye nezinye iinkalo.
2. IiLaser: Iiphepha ze-InGaAs epitaxial zingasetyenziselwa ukuvelisa iilaser, ingakumbi iilaser ezinde, ezidlala indima ebalulekileyo kunxibelelwano lwefayibha ye-optical, ukucubungula imboni kunye nezinye iinkalo.
3. Iiseli zelanga: Izinto ze-InGaAs zinoluhlu olubanzi lokulungiswa kwesithuba sebhendi, ezinokuhlangabezana neemfuno zesithuba sebhendi ezifunekayo kwiiseli ze-thermal photovoltaic, ngoko ke iphepha le-InGaAs epitaxial likwanesakhono esithile sokusetyenziswa kwicandelo leeseli zelanga.
4. Imifanekiso yezonyango: Kwizixhobo zemifanekiso yezonyango (ezifana ne-CT, i-MRI, njl.njl.), ukuze kufunyanwe kwaye kuthathwe imifanekiso.
5. Inethiwekhi yezivamvo: ekujongeni okusingqongileyo nasekufumaneni igesi, iiparameter ezininzi zinokujongwa ngaxeshanye.
6. Ukwenziwa kwezinto ngokuzenzekelayo kwimizi-mveliso: kusetyenziswa kwiinkqubo zokubona koomatshini ukujonga imeko kunye nomgangatho wezinto ezikumgca wemveliso.
Kwixesha elizayo, iipropati zezinto ezibonakalayo ze-InGaAs epitaxial substrate ziya kuqhubeka ziphucuka, kubandakanya ukuphuculwa kokusebenza kakuhle kokuguqulwa kwe-photoelectric kunye nokunciphisa amanqanaba engxolo. Oku kuya kwenza i-InGaAs epitaxial substrate isetyenziswe kakhulu kwizixhobo ze-optoelectronic, kwaye ukusebenza kwayo kugqwesile ngakumbi. Kwangaxeshanye, inkqubo yokulungiselela iya kuphuculwa rhoqo ukunciphisa iindleko kunye nokuphucula ukusebenza kakuhle, ukuze kuhlangatyezwane neemfuno zemarike enkulu.
Ngokubanzi, i-InGaAs epitaxial substrate ithatha indawo ebalulekileyo kwicandelo lezixhobo ze-semiconductor kunye neempawu zayo ezizodwa kunye namathuba okusetyenziswa ngokubanzi.
I-XKH inikezela ngokwenziwa ngokwezifiso kwamaphepha e-InGaAs epitaxial anezakhiwo ezahlukeneyo kunye nobukhulu, egubungela uluhlu olubanzi lwezicelo zezixhobo ze-optoelectronic, ii-laser, kunye neeseli zelanga. Iimveliso ze-XKH zenziwe ngezixhobo ze-MOCVD eziphambili ukuqinisekisa ukusebenza okuphezulu kunye nokuthembeka. Ngokuphathelele uthungelwano, i-XKH ineendlela ezahlukeneyo zemithombo yamazwe ngamazwe, ezinokusingatha inani lee-odolo ngokuguquguquka, kwaye zibonelele ngeenkonzo ezongeziweyo ezifana nokuphucula kunye nokwahlulahlula. Iinkqubo zokuhambisa ezisebenzayo ziqinisekisa ukuhanjiswa ngexesha elifanelekileyo kwaye zihlangabezana neemfuno zabathengi zomgangatho kunye namaxesha okuhambisa.
Umzobo oneenkcukacha



