I-GaN kwiglasi eyi-4-intshi: Ukhetho lweglasi olulungisekayo ukuquka iJGS1, JGS2, BF33, kunye neQuartz eqhelekileyo

I-GaN kwiglasi 4-intshi: Ukhetho lweglasi olulungisekayo ukuquka i-JGS1, i-JGS2, i-BF33, kunye nomfanekiso oQinisekisiweyo weQuartz

Inkcazelo emfutshane:

YethuI-GaN kwiglasi ye-4-intshi yamaWafers abonelela ngokwezifisoiinketho ze-glass substrate ezibandakanya i-JGS1, i-JGS2, i-BF33, kunye ne-Quartz eqhelekileyo, eyenzelwe uluhlu olubanzi lwezicelo kwi-optoelectronics, izixhobo eziphezulu zamandla, kunye neenkqubo ze-photonic. I-Gallium Nitride (i-GaN) yi-wide-bandgap semiconductor ebonelela ngokusebenza okugqwesileyo kwiqondo eliphezulu lobushushu kunye ne-high-frequency environments. Xa ikhuliswe kwii-substrates zeglasi, i-GaN ibonelela ngeepropathi ezikhethekileyo zoomatshini, ukuqina okuphuculweyo, kunye nemveliso enexabiso eliphantsi ukulungiselela usetyenziso olusezantsi. Ezi zixhobo zilungele ukusetyenziswa kwii-LED, ii-laser diode, ii-photodetectors, kunye nezinye izixhobo ze-optoelectronic ezifuna ukusebenza okuphezulu kwe-thermal kunye nombane. Ngokhetho lweglasi olulungiselelweyo, ii-wafers zethu ze-GaN-on-glass zibonelela ngezisombululo eziguquguqukayo nezisebenza kakhulu ukuhlangabezana neemfuno zale mihla yoshishino lwe-elektroniki kunye nefotonic.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimbonakalo

●Ibhendi ebanzi:I-GaN ine-3.4 eV bandgap, evumela ukusebenza okuphezulu kunye nokuqina okukhulu phantsi kweemeko eziphezulu ze-voltage kunye nobushushu obuphezulu xa kuthelekiswa nezinto eziqhelekileyo ze-semiconductor ezifana ne-silicon.
●Izahlulo zeglasi ezilungiselelwayo:Ifumaneka nge-JGS1, i-JGS2, i-BF33, kunye ne-Odinary Quartz iinketho zeglasi ukukhawulelana neemfuno ezahlukeneyo ze-thermal, mechanical, kunye ne-optical performance.
● High Thermal Conductivity:I-GaN ephezulu ye-thermal conductivity iqinisekisa ukuchithwa kobushushu okusebenzayo, okwenza ezi ziqwenga zilungele ukusetyenziswa kwamandla kunye nezixhobo ezenza ukushisa okuphezulu.
●Umbane oPhezulu wokuCalula:Ukukwazi kwe-GaN ukugcina amandla ombane aphezulu kwenza la mawafa afanelekele iitransistor zamandla kunye nosetyenziso lwefrikhwensi ephezulu.
●Amandla oomatshini aBalaseleyo:I-substrates yeglasi, idityaniswe neempawu ze-GaN, zibonelela ngamandla omatshini aqinileyo, okwandisa ukuqina kwe-wafer kwiindawo ezifuna ngamandla.
● Iindleko eziNcitshisiweyo zokuVelisa:Xa kuthelekiswa ne-GaN-on-Silicon yendabuko okanye i-GaN-on-Sapphire wafers, i-GaN-on-glass isisombululo esineendleko eziphezulu kwimveliso enkulu yezixhobo zokusebenza eziphezulu.
● Iinkcazelo Ngeempawu eziLungelelweyo:Iinketho ezahlukeneyo zeglasi zivumela ukwenziwa ngokwezifiso kweempawu ze-optical ze-wafer, ziyenza ilungele usetyenziso kwi-optoelectronics kunye ne-photonics.

IiNgcaciso zobuGcisa

Ipharamitha	Ixabiso
Ubungakanani beWafer	4-intshi
Iinketho zeGlass Substrate	I-JGS1, i-JGS2, i-BF33, i-Quartz eqhelekileyo
GaN Layer Ukutyeba	100 nm – 5000 nm (customizable)
GaN Bandgap	3.4 eV (ibhendi ebanzi)
Ukuqhekeka kweVoltage	Ukuya kuthi ga kwi-1200V
I-Thermal Conductivity	1.3 – 2.1 W/cm·K
Ukuhamba kwe-Elektroni	2000 cm²/V·s
Uburhabaxa boMphezulu weWafer	RMS ~0.25 nm (AFM)
Ukuchasa iPhepha leGaN	437.9 Ω·cm²
Ukuxhathisa	Semi-insulating, N-type, P-type (customizable)
Ukuhanjiswa kwamehlo	> 80% kubude obubonakalayo kunye ne-UV
Wafer Warp	< 25 µm (ubuninzi)
Umphezulu Gqiba	I-SSP (icala elinye likhazimlisiwe)

Usetyenziso

Optoelectronics:
I-GaN-on-glass wafers isetyenziswa ngokubanzi kwiii-LEDskwayelaser diodesngenxa yokusebenza kakuhle kwe-GaN kunye nokusebenza kwamehlo. Ukukwazi ukukhetha substrates zeglasi ezifanaJGS1kwayeJGS2ivumela ukwenziwa ngokwezifiso kwi-optical transparency, ibenze ilungele amandla aphezulu, ukukhanya okuphezuluii-LED eziluhlaza / eziluhlazakwayeUV lasers.

Iifotoni:
I-GaN-on-glass wafers ifanelekileii-photodetectors, iisekethe ezihlanganisiweyo zefotonic (PICs), kwayeabenzi boluvo bokubona. Iimpawu zabo ezibalaseleyo zokuhambisa ukukhanya kunye nokuzinza okuphezulu kwizicelo eziphezulu ze-frequency zibenza bafanelekeunxibelelwanokwayeitekhnoloji yoluvo.

I-Electronics yamandla:
Ngenxa ye-bandgap ebanzi kunye ne-voltage ephezulu yokuphuka, ii-wafers ze-GaN-on-glass zisetyenziswaiitransistor zamandla aphezulukwayeuguqulo lwamandla aphezulu. Ukukwazi kwe-GaN ukuphatha i-voltages ephezulu kunye nokuchithwa kwe-thermal kwenza ilungeleizikhulisa-mandla, RF transistors amandla, kwayeamandla e-elektronikikwimizi-mveliso kunye nezicelo zabathengi.

Usetyenziso oluPhezulu-Frequency:
I-GaN-on-glass wafers ibonisa kakuhleukuhamba kwe-electronkwaye inokusebenza ngesantya esiphezulu sokutshintsha, sibenze balungeleizixhobo zamandla aphezulu-frequency, izixhobo ze-microwave, kwayeIzandisi zeRF. Ezi ngamacandelo abalulekileyo kwiIinkqubo zonxibelelwano ze-5G, iinkqubo zerada, kwayeunxibelelwano ngesathelayithi.

Izicelo zeemoto:
I-GaN-on-glass wafers ikwasetyenziswa kwiinkqubo zamandla emoto, ngakumbi kwiiitshaja ezisebhodini (OBCs)kwayeIziguquli zeDC-DCkwizithuthi zombane (EVs). Amandla ee-wafers 'ukuphatha amaqondo obushushu aphezulu kunye ne-voltages avumela ukuba asetyenziswe kumbane we-elektroniki kwii-EVs, enikezela ukusebenza kakuhle kunye nokuthembeka.

Izixhobo zonyango:
Iipropati ze-GaN zenza ukuba ibe yinto ekhangayo yokusetyenziswa kuyoumfanekiso wezonyangokwayeizivamvo zebhayomedical. Ukukwazi kwayo ukusebenza kwi-voltages ephezulu kunye nokuchasana kwayo kwi-radiation kuyenza ilungele usetyenzisoizixhobo zokuxilongakwayelasers zonyango.

Q&A

I-Q1: Kutheni i-GaN-on-glass iyindlela efanelekileyo xa kuthelekiswa ne-GaN-on-Silicon okanye i-GaN-on-Sapphire?

A1:I-GaN-on-glass inikezela ngeenzuzo ezininzi, kuqukaukusebenza kakuhle kweendlekokwayeulawulo olungcono lwe-thermal. Ngelixa i-GaN-on-Silicon kunye ne-GaN-on-Sapphire zibonelela ngokusebenza ngokugqwesileyo, ii-substrates zeglasi zingabizi kakhulu, zifumaneka ngokulula, kwaye zenziwe ngokwezifiso ngokweempawu ze-optical and mechanical properties. Ukongeza, ii-wafers ze-GaN-on-glass zibonelela ngokusebenza kakuhle kuzo zombiniukubonakwayeizicelo ze-elektroniki ezinamandla aphezulu.

I-Q2: Uthini umahluko phakathi kwe-JGS1, JGS2, BF33, kunye ne-Ordinary Quartz glass options?

A2:

JGS1kwayeJGS2zikumgangatho ophezulu weglasi optical substrates ezaziwa ngezazoukukhanya okuphezulu okubonakalayokwayeukwanda kwe-thermal ephantsi, ezenza zilungele izixhobo zefotonic kunye ne-optoelectronic.
BF33iglasi inikezaisalathisi esiphezulu se-refractivekwaye ifanelekile kwizicelo ezifuna ukuphuculwa kokusebenza kwamehlo, njengelaser diodes.
Iquartz eqhelekileyoinikeza phezuluukuzinza kwe-thermalkwayeukumelana nemitha, okwenza ukuba ilungele ubushushu obuphezulu kunye nezicelo zokusingqongileyo ezinzima.

I-Q3: Ngaba ndingayenza ngokwezifiso i-resistivity kunye nodidi lwe-doping kwii-GaN-on-glass wafers?

A3:Ewe, sinikezelaResistivity customizablekwayeiintlobo zedoping(uhlobo lwe-N okanye uhlobo lwe-P) lwe-GaN-on-glass wafers. Oku bhetyebhetye kuvumela iiwafers ukuba zilungelelaniswe kwizicelo ezithile, kubandakanya izixhobo zamandla, ii-LED, kunye neenkqubo zefotonic.

I-Q4: Zeziphi izicelo eziqhelekileyo ze-GaN-on-glass kwi-optoelectronics?

A4:Kwi-optoelectronics, ii-wafers ze-GaN-on-glass ziqhele ukusetyenziswaii-LED eziluhlaza kunye nohlaza, UV lasers, kwayeii-photodetectors. Iimpawu ezibonakalayo zeglasi zivumela izixhobo eziphakamileyoukuhanjiswa kokukhanya, ibenza ukuba balungele izicelo kwiukubonisa itekhnoloji, ukukhanya, kwayeiinkqubo zonxibelelwano zamehlo.

I-Q5: I-GaN-on-glass isebenza njani kwizicelo eziphezulu ze-frequency?

A5:I-GaN-on-glass wafers inikezelaukuhamba kakuhle kwe-electron, kubavumela ukuba baqhube kakuhleizicelo eziphezulu-frequencynjengeIzandisi zeRF, izixhobo ze-microwave, kwayeIinkqubo zonxibelelwano ze-5G. I-voltage yabo ephezulu yokuphuka kunye nelahleko ephantsi yokutshintsha ibenza bafanelekeizixhobo zeRF eziphezulu zamandla.

I-Q6: Yeyiphi i-voltage yokuqhekeka eqhelekileyo ye-GaN-on-glass wafers?

A6:Ii-wafers ze-GaN-on-glass ngokuqhelekileyo zixhasa ukutshatyalaliswa kombane ukuya kuthi ga1200V, ukubenza bafanelekeamandla phezulukwayeamandla ombane aphezuluizicelo. Ibhendi yabo ebanzi ibavumela ukuba baphathe amandla ombane aphezulu kunezixhobo eziqhelekileyo ze-semiconductor njengesilicon.

I-Q7: Ngaba ii-wafers ze-GaN-on-glass zingasetyenziswa kwizicelo zeemoto?

A7:Ewe, ii-wafers ze-GaN-on-glass zisetyenziswaii-elektroniki zamandla emoto, kuqukaIziguquli zeDC-DCkwayeiitshaja ezisebhodini(ii-OBCs) zezithuthi zombane. Ukukwazi kwabo ukusebenza kumaqondo obushushu aphezulu kunye nokuphatha amandla ombane aphezulu kubenza balungele ezi zicelo zinzima.

Ukuqukumbela

I-GaN yethu kwi-Glass 4-Inch Wafers inikezela ngesisombululo esisodwa kunye nesenziwe ngokwezifiso kwiintlobo ezahlukeneyo zezicelo kwi-optoelectronics, i-electronics yamandla, kunye neefotonics. Ngeenketho ze-glass substrate ezifana ne-JGS1, i-JGS2, i-BF33, kunye ne-Quartz eqhelekileyo, ezi ziqwenga zibonelela ngokuguquguqukayo kwiipropati zombini kunye nezixhobo ezibonakalayo, ezivumela izisombululo ezilungelelanisiweyo zamandla aphezulu kunye nezixhobo eziphezulu ze-frequency. Nokuba yeyee-LEDs, ii-laser diodes, okanye ii-RF applications, ii-GaN-on-glass wafers