I-GaN kwiGlasi eyi-4-Inch: Iinketho zeGlasi ezinokwenziwa ngokwezifiso kuquka i-JGS1, i-JGS2, i-BF33, kunye ne-Ordinary Quartz

Inkcazo emfutshane:

ZethuIiWafers zeGaN kwiGlasi eziyi-4-Inch zibonelela ngeenkonzo ezinokwenzekaIinketho ze-substrate zeglasi eziquka i-JGS1, i-JGS2, i-BF33, kunye ne-Ordinary Quartz, ezenzelwe uluhlu olubanzi lwezicelo kwi-optoelectronics, izixhobo ezinamandla aphezulu, kunye neenkqubo ze-photonic. I-Gallium Nitride (GaN) yi-semiconductor ye-wide-bandgap enika ukusebenza okugqwesileyo kwiindawo ezinobushushu obuphezulu kunye ne-frequency ephezulu. Xa ikhuliswe kwi-substrates zeglasi, i-GaN inika iipropati ezibalaseleyo zoomatshini, ukuqina okuphuculweyo, kunye nemveliso engabizi kakhulu kwizicelo ezisemgangathweni. Ezi wafers zilungele ukusetyenziswa kwi-LEDs, ii-laser diodes, ii-photodetectors, kunye nezinye izixhobo ze-optoelectronic ezifuna ukusebenza okuphezulu kobushushu kunye nombane. Ngeendlela zeglasi ezenzelwe wena, ii-wafers zethu ze-GaN-on-glass zibonelela ngezisombululo eziguquguqukayo nezisebenza kakuhle ukuhlangabezana neemfuno zamashishini e-elektroniki kunye ne-photonic anamhlanje.


Iimbonakalo

Iimbonakalo

●Isithuba esibanzi sebhendi:I-GaN ine-bandgap ye-3.4 eV, evumela ukusebenza kakuhle kunye nokuqina okukhulu phantsi kweemeko ze-voltage ephezulu kunye nobushushu obuphezulu xa kuthelekiswa nezixhobo ze-semiconductor zemveli ezifana ne-silicon.
●Ii-substrates zeglasi ezinokwenziwa ngokwezifiso:Ifumaneka nge-JGS1, JGS2, BF33, kunye neenketho zeglasi ze-Ordinary Quartz ukuze ihlangabezane neemfuno ezahlukeneyo zokusebenza kobushushu, koomatshini, kunye nokusebenza kwe-optical.
●Ukuqhuba Okuphezulu Kobushushu:Ukuqhuba kobushushu okuphezulu kweGaN kuqinisekisa ukuchithwa kobushushu okusebenzayo, nto leyo eyenza ezi wafers zilungele ukusetyenziswa kwamandla kunye nezixhobo ezivelisa ubushushu obuphezulu.
●Umbane oPhakamileyo oPhezulu:Amandla eGaN okugcina ii-voltage eziphezulu enza ezi wafers zilungele ii-transistors zamandla kunye nokusetyenziswa kwe-frequency ephezulu.
● Amandla Agqwesileyo Oomatshini:Ii-substrates zeglasi, zidityaniswe neempawu zeGaN, zibonelela ngamandla oomatshini aqinileyo, ziphucula ukuqina kwe-wafer kwiindawo ezifuna kakhulu.
●Iindleko zoMveliso ezincitshisiweyo:Xa kuthelekiswa nee-wafers zemveli zeGaN-on-Silicon okanye zeGaN-on-Sapphire, iGaN-on-glass sisisombululo esingabizi kakhulu kwimveliso enkulu yezixhobo ezisebenza kakuhle.
●Iimpawu zokukhanya ezilungiselelwe wena:Iindlela ezahlukeneyo zeglasi zivumela ukwenziwa ngokwezifiso kweempawu zokukhanya ze-wafer, nto leyo eyenza ifaneleke ukusetyenziswa kwi-optoelectronics nakwi-photonics.

Iinkcukacha zobugcisa

Ipharamitha

Ixabiso

Ubungakanani beWafer Ii-intshi ezi-4
Iinketho zeSithako seGlasi JGS1, JGS2, BF33, iQuartz eqhelekileyo
Ubukhulu beLeya yeGaN 100 nm – 5000 nm (ingenziwa ngokwezifiso)
I-GaN Bandgap 3.4 eV (isithuba esibanzi)
Ukwahlulwa kweVolthi Ukuya kuthi ga kwi-1200V
Ukuqhuba kweThermal 1.3 – 2.1 W/cm·K
Ukuhamba kwe-Electron 2000 cm²/V·s
Uburhabaxa bomphezulu weWafer I-RMS ~0.25 nm (AFM)
Ukumelana nePhepha leGaN 437.9 Ω·cm²
Ukuxhathisa Ukuthintela okuncinci, uhlobo lwe-N, uhlobo lwe-P (olunokwenziwa ngokwezifiso)
Ukuhanjiswa kokukhanya >80% yee-wavelengths ezibonakalayo kunye ne-UV
I-Wafer Warp < 25 µm (ubuninzi)
Umphezulu wokugqiba I-SSP (epholishiweyo kwicala elinye)

Izicelo

I-Optoelectronics:
Iiwafers zeglasi zeGaN zisetyenziswa kakhulu kwiIi-LEDkwayeiidiode zelaserngenxa yokusebenza kakuhle kweGaN kunye nokusebenza kakuhle kokukhanya. Ubuchule bokukhetha izinto zeglasi ezifanaJGS1kwayeI-JGS2ivumela ukwenziwa ngokwezifiso kokukhanya okubonakalayo, okwenza ukuba zilungele amandla aphezulu kunye nokukhanya okuphezuluii-LED eziluhlaza okwesibhakabhaka/eziluhlazakwayeIileyiza ze-UV.

Iifotoniki:
Iiwafers zeglasi zeGaN zilungele ukusetyenziswaii-photodetectors, iisekethe ezidityanisiweyo ze-photonic (ii-PIC)kunyeizinzwa ezibonakalayoIimpawu zabo zokudlulisa ukukhanya ezibalaseleyo kunye nozinzo oluphezulu kwizicelo ze-high-frequency zibenza bafanelekeunxibelelwanokwayeubuchwepheshe benzwa.

Amandla e-Elektroniki:
Ngenxa yesithuba sazo esikhulu kunye nombane ophezulu wokuqhekeka, ii-wafers ze-GaN-on-glass ziyasetyenziswaii-transistors ezinamandla aphezulukwayeukuguqulwa kwamandla aphindaphindwayo aphezuluUkukwazi kweGaN ukusingatha ii-voltage eziphezulu kunye nokusasazwa kobushushu kwenza ukuba ilungeleizixhobo zokukhulisa amandla, Ii-transistors zamandla e-RFkunyeizixhobo zombane zamandlakwizicelo zoshishino kunye nabathengi.

Izicelo eziQhelekileyo kakhulu:
Iiwafers zeglasi zeGaN zibalasele kakhuluukuhambahamba kwe-electronkwaye ingasebenza ngesantya esiphezulu sokutshintsha, nto leyo eyenza ukuba ibe yeyona ifanelekileyoizixhobo zamandla ezisebenzisa i-frequency ephezulu, izixhobo ze-microwavekunyeIzikhulisi zeRFEzi zizinto ezibalulekileyo kwiIinkqubo zonxibelelwano ze-5G, iinkqubo zeradarkunyeunxibelelwano lwesathelayithi.

Izicelo zeeMoto:
Ii-wafers zeglasi zeGaN zikwasetyenziswa kwiinkqubo zamandla eemoto, ngakumbi kwiiitshaja ezikwibhodi (ii-OBC)kwayeAbaguquli be-DC-DCkwizithuthi zombane (ii-EV). Amandla ee-wafers okusingatha amaqondo obushushu aphezulu kunye ne-voltage avumela ukuba zisetyenziswe kwi-electronics zamandla kwii-EV, nto leyo enika ukusebenza kakuhle kunye nokuthembeka okukhulu.

Izixhobo zonyango:
Iimpawu zeGaN ziyenza ibe yinto enomtsalane yokusetyenziswaimifanekiso yezonyangokwayeizinzwa ze-biomedicalAmandla ayo okusebenza kwiivolthi eziphezulu kunye nokumelana kwayo nemitha kwenza ukuba ilungele ukusetyenziswa kwiizixhobo zokuxilongakwayeiileyiza zonyango.

Imibuzo neempendulo

Umbuzo 1: Kutheni iGaN-on-glass ilukhetho olufanelekileyo xa ithelekiswa neGaN-on-Silicon okanye iGaN-on-Sapphire?

A1:I-GaN-on-glass ineenzuzo ezininzi, kuqukaukusebenza kakuhle kweendlekokwayeulawulo olungcono lobushushuNangona iGaN-on-Silicon kunye neGaN-on-Sapphire zibonelela ngokusebenza okugqwesileyo, ii-substrates zeglasi zixabiso eliphantsi, zifumaneka lula, kwaye zinokuguqulwa ngokweempawu zokukhanya kunye nezoomatshini. Ukongeza, ii-wafers zeGaN-on-glass zibonelela ngokusebenza okugqwesileyo kuzo zombinii-opticalkwayeizicelo ze-elektroniki ezinamandla aphezulu.

Umbuzo 2: Yintoni umahluko phakathi kweendlela zeglasi zeJGS1, JGS2, BF33, kunye neOrdinary Quartz?

A2:

  • JGS1kwayeI-JGS2zii-substrates zeglasi ezibonakalayo ezikumgangatho ophezulu ezaziwa ngazoukukhanya okuphezulu kokukhanyakwayeukwandiswa okuphantsi kobushushu, nto leyo eyenza ukuba zilungele izixhobo ze-photonic kunye ne-optoelectronic.
  • BF33izibonelelo zeglasiisalathisi esiphezulu sokuqaqambisakwaye ilungele usetyenziso olufuna ukusebenza okuphuculweyo kwe-optical, njengeiidiode zelaser.
  • I-Quartz eqhelekileyoibonelela ngexabiso eliphezuluuzinzo lobushushukwayeukumelana nemitha, nto leyo eyenza ukuba ifaneleke kwiindawo ezishushu kakhulu nezingqwabalala.

Umbuzo 3: Ngaba ndingayilungisa indlela yokumelana notywala kunye nohlobo lwe-doping kwii-wafers zeglasi ze-GaN?

A3:Ewe, siyanikezelaukumelana okunokwenziwa ngokwezifisokwayeiintlobo ze-doping(Uhlobo lwe-N okanye uhlobo lwe-P) kwii-wafers zeglasi ze-GaN. Oku kuguquguquka kuvumela ii-wafers ukuba zilungiselelwe usetyenziso oluthile, kubandakanya izixhobo zamandla, ii-LED, kunye neenkqubo ze-photonic.

Umbuzo 4: Zeziphi iinkqubo eziqhelekileyo zeGaN-on-glass kwi-optoelectronics?

A4:Kwi-optoelectronics, ii-wafers ze-GaN-on-glass zisetyenziswa kakhulu kwi-ii-LED eziluhlaza okwesibhakabhaka neziluhlaza, Iileyiza ze-UVkunyeii-photodetectorsIimpawu ezibonakalayo zeglasi ezinokwenziwa ngokwezifiso zivumela izixhobo ezine-highuthumelo lokukhanya, nto leyo eyenza ukuba zilungele ukusetyenziswa kwiubuchwepheshe bokubonisa, ukukhanyakunyeiinkqubo zonxibelelwano lwe-optical.

Umbuzo 5: Isebenza njani iGaN-on-glass kwizicelo ezisetyenziswa rhoqo?

A5:Ii-wafers ze-GaN-on-glass ziyafumanekaukuhamba kakuhle kwe-electron, okubavumela ukuba basebenze kakuhle kwiizicelo ezisetyenziswa rhoqonjengeIzikhulisi zeRF, izixhobo ze-microwavekunyeIinkqubo zonxibelelwano ze-5GUmbane wazo ophezulu wokuqhekeka kunye nokulahleka okuphantsi kokutshintsha kwenza ukuba zilungele ukusetyenziswaizixhobo zeRF ezinamandla aphezulu.

Umbuzo 6: Ingakanani i-voltage eqhelekileyo yokuqhekeka kwee-wafers zeglasi zeGaN?

A6:Ii-wafers zeglasi zeGaN zihlala zixhasa i-voltages yokuqhekeka ukuya kuthi ga kwi1200V, ezenza zifanelekeamandla phezulukwayei-voltage ephezuluI-bandgap yazo ebanzi ivumela ukuba zikwazi ukusingatha ii-voltage eziphezulu kunezixhobo ze-semiconductor eziqhelekileyo ezifana ne-silicon.

Umbuzo 7: Ngaba ii-wafers zeglasi zeGaN zingasetyenziswa kwizicelo zeemoto?

A7:Ewe, ii-wafers ze-GaN-on-glass zisetyenziswa kwiizixhobo zombane zamandla eemoto, kuqukaAbaguquli be-DC-DCkwayeiitshaja ezisebhodini(ii-OBC) zezithuthi zombane. Ukukwazi kwazo ukusebenza kumaqondo obushushu aphezulu kunye nokusingatha iivoltheji eziphezulu kuzenza zilungele ezi zicelo zinzima.

Isiphelo

IiWafers zethu zeGaN on Glass 4-Inch zibonelela ngesisombululo esikhethekileyo nesinokulungiselelwa kwiintlobo ngeentlobo zezicelo kwi-optoelectronics, kwi-power electronics, nakwi-photonics. Ngeendlela zeglasi ezifana neJGS1, JGS2, BF33, kunye ne-Ordinary Quartz, ezi wafers zibonelela ngokuguquguquka kwiipropati zoomatshini kunye nezokukhanya, zivumela izisombululo ezenzelwe izixhobo ezinamandla aphezulu kunye nezinga eliphezulu. Nokuba zeze-LED, ii-laser diodes, okanye kwizicelo ze-RF, iiwafers zeGaN-on-glass

Umzobo oneenkcukacha

I-GaN kwiglasi01
I-GaN kwiglasi02
I-GaN kwiglasi03
I-GaN kwiglasi08

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