50.8mm 2inch GaN kwisapphire Epi-layer wafer

50.8mm 2inch GaN kwisapphire I-Epi-layer wafer Featured Image

Inkcazelo emfutshane:

Njengomathiriyeli we-semiconductor yesizukulwana sesithathu, i-gallium nitride ineenzuzo zokumelana nobushushu obuphezulu, ukuhambelana okuphezulu, ukuhanjiswa kwe-thermal ephezulu kunye ne-gap band ebanzi.Ngokwezixhobo ezahlukeneyo ze-substrate, i-gallium nitride epitaxial sheets inokwahlulwa ibe ngamacandelo amane: i-gallium nitride esekelwe kwi-gallium nitride, i-silicon carbide esekelwe kwi-gallium nitride, i-sapphire esekelwe kwi-gallium nitride kunye ne-silicon esekelwe kwi-gallium nitride.I-Silicon-based gallium nitride epitaxial sheet yeyona mveliso isetyenziswa kakhulu enexabiso eliphantsi lokuvelisa kunye nobuchwepheshe bokuvelisa obuvuthiweyo.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

Ukusetyenziswa kwephepha le-gallium nitride GaN epitaxial sheet

Ngokusekwe kwintsebenzo ye-gallium nitride, iitshiphusi ze-gallium nitride epitaxial zifaneleka ikakhulu kumandla aphezulu, amaza omoya aphezulu, kunye nokusetyenziswa kwamandla ombane aphantsi.

Ibonakaliswa kwi:

I-1) I-bandgap ephezulu: I-bandgap ephezulu iphucula umgangatho wombane wezixhobo ze-gallium nitride kwaye inokuvelisa amandla aphezulu kunezixhobo ze-gallium arsenide, ezilungele ngokukodwa izikhululo zesiseko sonxibelelwano lwe-5G, i-radar yempi kunye nezinye iindawo;

I-2) Ukusebenza okuphezulu kokuguqulwa: ukuchasana kwe-gallium nitride yokutshintsha izixhobo ze-elektroniki zi-3 ii-odolo zobukhulu obuphantsi kunezixhobo ze-silicon, ezinokunciphisa kakhulu ilahleko ekutshintsheni;

3) I-conductivity ephezulu ye-thermal: i-conductivity ephezulu ye-thermal ye-gallium nitride yenza ukuba ibe nentsebenzo ebalaseleyo yokutshatyalaliswa kobushushu, ilungele ukuveliswa kwamandla aphezulu, ubushushu obuphezulu kunye nezinye iindawo zezixhobo;

4) Ukuqhekeka kwamandla entsimi yombane: Nangona amandla ombane ophukileyo we-gallium nitride esondele kuleyo ye-silicon nitride, ngenxa yenkqubo ye-semiconductor, ukungahambelani kwe-lattice yezinto kunye nezinye izinto, ukunyamezela kwamandla ombane wezixhobo ze-gallium nitride zihlala zimalunga ne-1000V, kwaye Usetyenziso olukhuselekileyo lombane ludla ngokuba ngaphantsi kwe-650V.

Into	I-GaN-TCU-C50	I-GaN-TCN-C50	I-GaN-TCP-C50
Imilinganiselo	e 50.8mm ± 0.1mm
Ukutyeba	4.5±0.5 um		4.5±0.5um
Ukuqhelaniswa	I-C-plane (0001) ± 0.5 °
Uhlobo lokuqhuba	N-udidi (Akutshintshwanga)	N-udidi (Si-doped)	P-udidi (Mg-doped)
Ukuxhathisa(3O0K)	<0.5 Q · cm	<0.05 Q・cm	~ 10 Q・cm
Ugxininiso lweCarrier	< 5x10¹⁷i-cm^-3	> 1x10¹⁸i-cm^-3	> 6x1016 cm^-3
Ukushukuma	~ 300 cm²/Vs	~ 200 cm²/Vs	~ 10cm²/Vs
Uxinaniso lokuTyeka	Ngaphantsi kwe-5x10⁸i-cm^-2(ibalwe yi-FWHMs ye-XRD)
Isakhiwo se-substrate	I-GaN kwiSapphire(uMgangatho: UKhetho lwe-SSP: DSP)
Indawo eSebenzayo yoMphezulu	> 90%
Iphakheji	Ipakishwe kwiklasi ye-100 yendawo ecocekileyo yegumbi, kwiikhasethi ze-25pcs okanye izikhongozeli ze-wafer enye, phantsi kwe-nitrogen emoyeni.