I-Epitaxial Layer
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200mm 8inch GaN kwisapphire Epi-layer wafer substrate
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I-GaN kwiglasi eyi-4-intshi: Ukhetho lweglasi olulungisekayo ukuquka iJGS1, JGS2, BF33, kunye neQuartz eqhelekileyo
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I-AlN-on-NPSS Wafer: I-Aluminiyam ye-Nitride eSebenza ngokuPhezulu yoMsebenzi kwiSubstrate yeSapphire engaguquguqukiyo kubushushu obuphezulu, amandla amakhulu, kunye nezicelo zeRF
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IGallium Nitride kwiSilicon wafer 4inch 6inch ezilungiselelwe iSi Substrate Orientation, Resistivity, kunye noN-type/P-type Options
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I-GaN-on-SiC Epitaxial Wafers eyenziwe ngokwezifiso (100mm, 150mm) -Iinketho ezininzi ze-SiC Substrate (4H-N, HPSI, 4H/6H-P)
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I-GaN-on-Diamond Wafers 4inch 6inch Iyonke ubukhulu be-epi (micron) 0.6 ~ 2.5 okanye ilungiselelwe usetyenziso oluPhezulu
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I-GaAs yamandla aphezulu e-epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yonyango lwelaser
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I-InGaAs epitaxial wafer substrate PD Array photodetector arrays ingasetyenziselwa iLiDAR
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2inch 3inch 4inch InP epitaxial wafer substrate APD isitofu sokukhanya sonxibelelwano lwefiber optic okanye iLiDAR
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4inch SiC Epi wafer for MOS okanye SBD
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I-Silicon-On-Insulator Substrate SOI yafeketha iileya ezintathu zeMicroelectronics kunye neRadio Frequency
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I-SOI wafer insulator kwi-silicon 8-intshi kunye ne-6-intshi ye-SOI (i-Silicon-On-Insulator) iiwafers