Indlela ye-CVD yokuvelisa izinto eziluhlaza ze-SiC ezicocekileyo kakhulu kwi-silicon carbide synthesis furnace kwi-1600℃

Indlela ye-CVD yokuvelisa izinto eziluhlaza ze-SiC ezicocekileyo kakhulu kwisithando sokwenziwa kwe-silicon carbide kwi-1600℃ Umfanekiso oPhambili

Inkcazo emfutshane:

Isithando sokwenziwa kweSilicon carbide (SiC) (CVD). Sisebenzisa iteknoloji yeChemical Vapor Deposition (CVD) kwimithombo ye-₄ gaseous silicon (umz. iSiH₄, iSiCl₄) kwindawo enobushushu obuphezulu apho isabela khona kwimithombo ye-carbon (umz. iC₃H₈, iCH₄). Isixhobo esibalulekileyo sokukhulisa iikristale ze-silicon carbide ezicocekileyo kakhulu kwi-substrate (i-graphite okanye imbewu yeSiC). Le teknoloji isetyenziswa kakhulu ekulungiseleleni i-SiC single crystal substrate (4H/6H-SiC), eyisixhobo esiphambili senkqubo yokwenza ii-semiconductors zamandla (ezifana neMOSFET, SBD).

Thumela i-imeyile kuthi

Iimbonakalo

Umgaqo wokusebenza:

1. Ubonelelo lwangaphambi kwe-precursor. Iigesi zomthombo we-silicon (umz. i-SiH₄) kunye nomthombo we-carbon (umz. i-C₃H₈) zixutywa ngokulinganayo kwaye zifakwe kwigumbi lokusabela.

2. Ukubola kobushushu obuphezulu: Kubushushu obuphezulu be-1500 ~ 2300℃, ukubola kwegesi kuvelisa ii-athomu ezisebenzayo ze-Si kunye ne-C.

3. Impendulo yomphezulu: Iiathom ze-Si kunye ne-C zifakwa kumphezulu we-substrate ukuze zenze umaleko wekristale ye-SiC.

4. Ukukhula kwekristale: Ngolawulo lobushushu, ukuhamba kwegesi kunye noxinzelelo, ukufezekisa ukukhula kwicala elijikeleze i-c axis okanye i-a axis.

Iiparameter eziphambili:

· Ubushushu: 1600~2200℃ (>2000℃ ye-4H-SiC)

· Uxinzelelo: 50~200mbar (uxinzelelo oluphantsi lokunciphisa i-nucleation yegesi)

· Umlinganiselo wegesi: Si/C≈1.0~1.2 (ukuthintela iziphene zokutyebisa i-Si okanye i-C)

Iimpawu eziphambili:

(1) Umgangatho wekristale
Uxinano oluphantsi lwesiphene: uxinano lwe-microtubule < 0.5cm ⁻², uxinano lwe-dislocation < 10⁴ cm⁻².

Ulawulo lohlobo lwePolycrystalline: lunokukhula i-4H-SiC (eqhelekileyo), i-6H-SiC, i-3C-SiC kunye nezinye iintlobo zekristale.

(2) Ukusebenza kwezixhobo
Uzinzo lobushushu obuphezulu: ukufudumeza okanye ukufudumeza kokumelana negrafiti, ubushushu obungaphezulu kwama-2300℃.

Ulawulo lokufana: ukuguquguquka kobushushu ±5℃, izinga lokukhula yi-10~50μm/h.

Inkqubo yegesi: Imitha yokuhamba kobunzima obuchanekileyo (MFC), ubumsulwa begesi ≥99.999%.

(3) Iingenelo zobuchwepheshe
Ubunyulu obuphezulu: Uxinzelelo lokungcola olungasemva <10¹⁶ cm⁻³ (N, B, njl. njl.).

Ubukhulu obukhulu: Ixhasa ukukhula kwe-substrate ye-SiC eyi-6 "/8".

(4) Ukusetyenziswa kwamandla kunye neendleko
Ukusetyenziswa kwamandla aphezulu (200~500kW·h ngesithando somlilo ngasinye), oku kuthetha i-30%~50% yeendleko zokuvelisa i-SiC substrate.

Izicelo eziphambili:

1. I-substrate ye-Power semiconductor: Ii-SiC MOSFET zokwenza izithuthi zombane kunye nee-inverters ze-photovoltaic.

2. Isixhobo se-Rf: Isiseko se-5G se-GaN-on-SiC epitaxial substrate.

3. Izixhobo ezisemgangathweni ophezulu: izixhobo zokuvavanya ubushushu obuphezulu kwizikhululo zamandla eenqwelo moya kunye nenyukliya.

Iinkcukacha zobugcisa:

Inkcazo	Iinkcukacha
Ubukhulu (L × W × H)	4000 x 3400 x 4300 mm okanye wenze ngokwezifiso
Ububanzi begumbi lesithando	1100mm
Umthamo wokulayisha	50kg
Isidanga somda we-vacuum	10-2Pa (iiyure ezi-2 emva kokuba ipompo yemolekyuli iqalile)
Izinga lokunyuka koxinzelelo lwegumbi	≤10Pa/h (emva kokuba i-calcination inyuswe)
Isithintelo sokuphakamisa isigqubuthelo sesithando esisezantsi	1500mm
Indlela yokufudumeza	Ukufudumeza kwe-induction
Ubushushu obuphezulu kwisithando somlilo	2400°C
Umbane wokufudumeza	2X40kW
Umlinganiselo wobushushu	Umlinganiselo wobushushu be-infrared obunemibala emibini
Uluhlu lobushushu	900~3000℃
Ukuchaneka kokulawula ubushushu	±1°C
Uluhlu loxinzelelo lolawulo	1 ~ 700mbar
Ukuchaneka koLawulo loxinzelelo	1~5mbar ±0.1mbar; 5~100mbar ±0.2mbar; 100~700mbar ±0.5mbar
Indlela yokulayisha	Umthwalo ophantsi;
Uqwalaselo olunokukhethwa	Indawo yokulinganisa ubushushu kabini, ukukhulula i-forklift.

Iinkonzo ze-XKH:

I-XKH ibonelela ngeenkonzo zomjikelo opheleleyo zeefeni ze-silicon carbide CVD, kubandakanya ukwenziwa ngokwezifiso kwezixhobo (uyilo lwendawo yobushushu, uqwalaselo lwenkqubo yegesi), uphuhliso lwenkqubo (ulawulo lwekristale, ukulungiswa kweziphene), uqeqesho lobuchwephesha (ukusebenza nokugcinwa) kunye nenkxaso emva kokuthengisa (ubonelelo lweendawo ezingasetyenziswanga zezinto ezibalulekileyo, ukuxilongwa okukude) ukunceda abathengi bafezekise imveliso yobuninzi be-SiC substrate esemgangathweni ophezulu. Kwaye banikezele ngeenkonzo zokuphucula inkqubo ukuze kuphuculwe rhoqo isivuno sekristale kunye nokusebenza kakuhle kokukhula.