Indlela ye-CVD yokuvelisa izixhobo ezicocekileyo ze-SiC kwi-silicon carbide synthesis synthesis e-1600 ℃

Indlela ye-CVD yokuvelisa izinto ezicocekileyo ze-SiC kwi-silicon carbide synthesis synthesis furnace kwi-1600 ℃ Umfanekiso ofakiweyo.

Inkcazelo emfutshane:

I-Silicon carbide (SiC) i-synthesis furnace (CVD). Isebenzisa iteknoloji yeChemical Vapor Deposition (CVD) ₄ imithombo yesilicon yegesi (umz. SiH₄, SiCl₄) kwindawo yobushushu obuphezulu apho basabela khona kwimithombo yekhabhoni (umz. C₃H₈, CH₄). Isixhobo esibalulekileyo sokukhulisa iikristale ze-silicon carbide ezicocekileyo kwi-substrate (i-graphite okanye imbewu ye-SiC). Itekhnoloji isetyenziselwa kakhulu ukulungiselela i-SiC single crystal substrate (4H / 6H-SiC), eyona nkqubo ingundoqo yesixhobo sokuvelisa i-semiconductors yamandla (efana ne-MOSFET, SBD).

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Umgaqo wokuSebenza:

1. Ubonelelo lwangaphambili. Umthombo we-silicon (umz. SiH₄) kunye nomthombo wekhabhoni (umz. C₃H₈) iigesi zixutywe ngokomlinganiselo kwaye zondliwa kwigumbi lokusabela.

2. Ukuchithwa kweqondo lokushisa eliphezulu: Kwiqondo lokushisa eliphezulu le-1500 ~ 2300 ℃, ukuchithwa kwegesi kuvelisa i-Si kunye ne-athomu esebenzayo.

3. Ukusabela komphezulu: iiathom ze-Si kunye ne-C zifakwe kumphezulu we-substrate ukuze zenze i-SiC crystal layer.

4. Ukukhula kweCrystal: Ngokulawulwa kweqondo lobushushu, ukuhamba kwegesi kunye noxinzelelo, ukufezekisa ukukhula kolwalathiso ecaleni kwe-axis okanye i-axis.

Iiparamitha eziphambili:

· Ubushushu: 1600 ~ 2200℃ (>2000℃ ye-4H-SiC)

· Uxinzelelo: 50 ~ 200mbar (uxinzelelo oluphantsi lokunciphisa i-nucleation yegesi)

· Umlinganiselo werhasi: Si/C≈1.0~1.2 (ukunqanda iSi okanye C iziphene zokutyebisa)

Iimpawu eziphambili:

(1) Umgangatho weCrystal
Uxinaniso lwesiphene esisezantsi: Uxinaniso lwemicrotubule <0.5cm ⁻², ingxinano yokususa indawo engaphantsi kwe-10⁴ cm⁻².

Ukulawulwa kohlobo lwe-Polycrystalline: inokukhula i-4H-SiC (i-mainstream), i-6H-SiC, i-3C-SiC kunye nezinye iindidi ze-crystal.

(2) Ukusebenza kwezixhobo
Uzinzo lobushushu obuphezulu: ukufudumeza kwegraphite okanye ukufudumeza ukumelana, ubushushu> 2300 ℃.

Ulawulo olufanayo: ukuguquguquka kobushushu ± 5℃, izinga lokukhula 10 ~ 50μm/h.

Inkqubo yegesi: Ukuchaneka okuphezulu kwe-flowmeter mass (MFC), ukucoceka kwegesi ≥99.999%.

(3) Iinzuzo zobuchwepheshe
Ucoceko oluphezulu: Ukugxininiswa kobumdaka ngasemva <10¹⁶ cm⁻³ (N, B, njl.).

Ubungakanani obukhulu: Inkxaso ye-6 "/8" ye-SiC substrate ukukhula.

(4) Ukusetyenziswa kwamandla kunye neendleko
Ukusetyenziswa kwamandla aphezulu (200 ~ 500kW · h kwisithando somlilo), kubalelwa kwi-30% ~ 50% yeendleko zemveliso ye-SiC substrate.

Usetyenziso olungundoqo:

1. I-substrate ye-semiconductor yamandla: I-SiC MOSFET yokuvelisa izithuthi zombane kunye ne-photovoltaic inverters.

2. Isixhobo se-Rf: Isiseko se-5G isikhululo se-GaN-on-SiC epitaxial substrate.

3.Izixhobo zokusingqongileyo ezigqithisileyo: izivamvo zobushushu obuphezulu zezixhobo ze-aerospace kunye nezixhobo zamandla enyukliya.

Iinkcukacha zobuchwephesha:

Inkcazo	Iinkcukacha
Imilinganiselo (L × W × H)	4000 x 3400 x 4300 mm okanye wenze ngokwezifiso
Isidanga segumbi lesithando somlilo	1100mm
Ukulayisha umthamo	50kg
Umda wokuvala iqondo	10-2Pa(2h emva kokuba impompo yemolekyuli iqalile)
Inqanaba lokunyuka koxinzelelo lwegumbi	≤10Pa/h(emva kokubala)
Isivalo sokuphakamisa isivalo sesithando somlilo esisezantsi	1500mm
Indlela yokufudumeza	Ukufudumeza kwe-induction
Ubushushu obukhulu kwisithando somlilo	2400°C
Ukufudumeza amandla ombane	2X40kW
Umlinganiselo wobushushu	Umlinganiselo wobushushu obunemibala emibini ye-infrared
Uluhlu lobushushu	900 ~ 3000℃
Ukuchaneka kolawulo lobushushu	±1°C
Uluhlu loxinzelelo lokulawula	1 ~ 700mbar
Ukuchaneka koLawulo loxinzelelo	1 ~ 5mbar ±0.1mbar; 5 ~ 100mbar ± 0.2mbar; 100 ~ 700mbar ± 0.5mbar
Indlela yokulayisha	Ukulayisha okusezantsi;
Ubumbeko olukhethwayo	Indawo yokulinganisa ubushushu kabini, ukothula iforklift.

Iinkonzo ze-XKH:

I-XKH inikezela ngeenkonzo zomjikelo opheleleyo we-silicon carbide CVD furnaces, kubandakanywa ukulungiswa kwezixhobo (uyilo lwendawo yobushushu, ukulungelelaniswa kwenkqubo yegesi), uphuhliso lwenkqubo (ulawulo lwekristale, ukulungiswa kwesiphako), uqeqesho lobugcisa (ukusebenza kunye nokugcinwa) kunye nenkxaso emva kokuthengisa (iindawo ezisecaleni zokubonelela ngamacandelo aphambili, ukuxilongwa okude) ukunceda abathengi bafezekise umgangatho ophezulu we-SiC substrate yemveliso. Kwaye unikezele ngeenkonzo zokuphucula inkqubo ngokuqhubekayo ukuphucula isivuno sekristale kunye nokusebenza kakuhle kokukhula.