Iisubstrates zeCrystal zeSiC Seed ezenziwe ngokwezifiso zeDia 205/203/208 4H-N Type for Optical Communications

Iisubstrates zeCrystal zeSiC Seed ezenziwe ngokwezifiso zeDia 205/203/208 4H-N Uhlobo lwe-Optical Communications Umfanekiso oPhambili

Inkcazo emfutshane:

Ii-substrates ze-crystal zembewu ye-SiC (silicon carbide), njengezithwali eziphambili zezinto ze-semiconductor zesizukulwana sesithathu, zisebenzisa i-thermal conductivity yazo ephezulu (4.9 W/cm·K), amandla entsimi yokuqhekeka okuphezulu kakhulu (2–4 MV/cm), kunye ne-wide bandgap (3.2 eV)ukuze zisebenze njengezixhobo ezisisiseko ze-optoelectronics, izithuthi zamandla amatsha, unxibelelwano lwe-5G, kunye nezicelo ze-aerospace. Ngokusebenzisa ubuchwepheshe obuphambili bokwenziwa obufana nokuthuthwa komphunga ngokwasemzimbeni (PVT) kunye ne-liquid phase epitaxy (LPE), i-XKH ibonelela nge-4H/6H-N-type, i-semi-insulating, kunye ne-3C-SiC polytype seed substrates kwiifomathi ze-wafer ze-2–12-intshi, ezinobunzima be-micropipe ngaphantsi kwe-0.3 cm⁻², i-resistivity eqala kwi-20–23 mΩ·cm, kunye ne-surface roughness (Ra) <0.2 nm. Iinkonzo zethu ziquka ukukhula kwe-heteroepitaxial (umz., i-SiC-on-Si), ukuchwetheza ngokuchanekileyo kwe-nanoscale (± 0.1 μm tolerance), kunye nokuhanjiswa ngokukhawuleza kwihlabathi liphela, ukunika amandla abathengi ukuba boyise imiqobo yobugcisa kunye nokukhawulezisa ukungathathi cala kwekhabhoni kunye notshintsho olukrelekrele.

Thumela i-imeyile kuthi

Iimbonakalo

Iiparameter zobugcisa

Isonka sembewu ye-silicon carbide
Uhlobo lwePolytype	4H
Impazamo yokujongwa komphezulu	4°ukuya<11-20>±0.5º
Ukuxhathisa	ukwenza ngokwezifiso
Ububanzi	205±0.5mm
Ubukhulu	600±50μm
Uburhabaxa	I-CMP,Ra≤0.2nm
Uxinano lweeMipayipi ezincinci	≤1 nganye/cm2
Imikrwelo	≤5, Ubude obupheleleyo ≤2 * Ububanzi
Iitships/ii-indents zomphetho	Akukho nanye
Ukumakishwa kwelaser yangaphambili	Akukho nanye
Imikrwelo	≤2, Ubude obupheleleyo ≤ Ububanzi
Iitships/ii-indents zomphetho	Akukho nanye
Iindawo zePolytype	Akukho nanye
Ukumakishwa kweleza yangasemva	1mm (ukusuka kumda ophezulu)
Umphetho	I-Chamfer
Ukupakisha	Ikhasethi yewafer eninzi

Iimpawu eziphambili

1. Ulwakhiwo lwekristale kunye nokusebenza kombane

· Uzinzo lweCrystallographic: 100% 4H-SiC polytype dominance, akukho zi-inclusions ezininzi ze-crystalline (umz., 6H/15R), kunye ne-XRD rocking curve epheleleyo kwi-half-maximum (FWHM) ≤32.7 arcsec.

· UkuHamba Okuphezulu Kokuthwala: UkuHamba kwee-elektroni ezingama-5,400 cm²/V·s (4H-SiC) kunye nokuHamba kwemingxuma engama-380 cm²/V·s, okuvumela uyilo lwezixhobo ezisebenzisa i-frequency ephezulu.

·Ukuqina kwemitha: Imelana nokukhanyiswa kwemitha ye-neutron ye-1 MeV kunye nomda womonakalo wokufuduka we-1×10¹⁵ n/cm², ifanelekile kwizixhobo zeenqwelo-moya kunye nezenyukliya.

2. Iipropati zoBushushu kunye nezobuMechanical

· Ukuqhuba okungaqhelekanga kobushushu: 4.9 W/cm·K (4H-SiC), okuphindwe kathathu kune-silicon, okuxhasa ukusebenza okungaphezulu kwama-200°C.

· I-Coefficient yokwandisa ubushushu obuphantsi: i-CTE ye-4.0×10⁻⁶/K (25–1000°C), iqinisekisa ukuhambelana nokupakishwa okusekwe kwi-silicon kwaye inciphisa uxinzelelo lobushushu.

3. Ulawulo olupheleleyo kunye nokuCwangcisa ngokuchanekileyo

· Uxinano lweMicropipe: <0.3 cm⁻² (ii-wafers ezi-8-intshi), uxinano lwe-dislocation <1,000 cm⁻² (kuqinisekiswe nge-KOH etching).

· Umgangatho womphezulu: I-CMP-polished ukuya kwi-Ra <0.2 nm, ihlangabezana neemfuno ze-EUV lithography-grade flatness.

Izicelo eziphambili

Idomeyini	Iziganeko zesicelo	Iingenelo zobugcisa
Unxibelelwano lwe-Optical	Iimodyuli ze-100G/400G ze-laser, ii-silicon photonics hybrid	Ii-substrates zembewu ye-InP zivumela i-bandgap ethe ngqo (1.34 eV) kunye ne-heteroepitaxy esekelwe kwi-Si, nto leyo enciphisa ukulahleka kwe-optical coupling.
Iimoto Ezintsha Zamandla	Ii-inverters ze-800V eziphezulu ze-voltage, iitshaja ezikwibhodi (OBC)	Ii-substrates ze-4H-SiC zimelana ne->1,200 V, nto leyo enciphisa ilahleko zokuqhuba nge-50% kunye nomthamo wenkqubo nge-40%.
Unxibelelwano lwe-5G	Izixhobo ze-RF ze-Millimeter-wave (PA/LNA), izixhobo zokukhulisa amandla zesikhululo esisezantsi	Ii-substrates ze-SiC ezizi-semi-insulating (resistivity >10⁵ Ω·cm) zivumela ukuhlanganiswa kwe-passive ye-high-frequency (60 GHz+).
Izixhobo zeMveliso	Izinzwa zobushushu obuphezulu, ii-transformers zangoku, iimonitha ze-reactor zenyukliya	Ii-substrates zembewu ye-InSb (0.17 eV bandgap) zinika uvakalelo lwemagnethi olufikelela kwi-300%@10 T.

Iingenelo eziphambili

Ii-substrates ze-SiC (i-silicon carbide) zembewu yekristale zibonelela ngokusebenza okungenakuthelekiswa nanto nge-4.9 W/cm·K thermal conductivity, amandla entsimi yokuqhekeka kwe-2–4 MV/cm, kunye ne-3.2 eV wide bandgap, evumela ukusetyenziswa kwamandla aphezulu, amaza aphezulu, kunye nobushushu obuphezulu. Ezi substrates ziqinisekisa ukuthembeka kwiimeko ezigqithisileyo. Ukungangeni kwazo kweekhemikhali kunye neendawo ezihambelana ne-CVD (Ra <0.2 nm) zixhasa ukukhula kwe-heteroepitaxial okuphucukileyo (umz., i-SiC-on-Si) kwiinkqubo zamandla ze-optoelectronics kunye ne-EV.

Iinkonzo ze-XKH:

1. Imveliso Eyenzelwe Wena

· Iifomathi zeWafer eziguquguqukayo: Iiwafers eziziisentimitha ezi-2–12 ezineemicu ezijikelezileyo, eziziingxande, okanye ezimile okwesiko (± 0.01 mm ukunyamezelana).

· Ulawulo lwe-Doping: Unyango lwe-nitrogen (N) kunye ne-aluminium (Al) oluchanekileyo nge-CVD, olufikelela kwi-resistivity luqala kwi-10⁻³ ukuya kwi-10⁶ Ω·cm.

2. Iiteknoloji zeNkqubo eziPhambili.

· I-Heteroepitaxy: I-SiC-on-Si (iyahambelana nemigca ye-silicon eyi-8-intshi) kunye ne-SiC-on-Diamond (ukuqhuba ubushushu >2,000 W/m·K).

· Ukunciphisa Iziphene: Ukugrumba kunye nokuqhobosha i-hydrogen ukunciphisa iziphene ze-micropipe/density, ukuphucula isivuno se-wafer ukuya kuthi ga kwi-95%.

3. Iinkqubo zoLawulo loMgangatho.

· Uvavanyo oluvela ekupheleni: I-Raman spectroscopy (ukuqinisekiswa kwe-polytype), i-XRD (i-crystallinity), kunye ne-SEM (uhlalutyo lweempazamo).

· Iziqinisekiso: Ziyahambelana ne-AEC-Q101 (iimoto), i-JEDEC (JEDEC-033), kunye ne-MIL-PRF-38534 (yezinga lomkhosi).

4. Inkxaso yeCandelo leeNkonzo zeHlabathi.

· Umthamo wokuvelisa: Imveliso yenyanga >10,000 wafers (60% 8-intshi), kunye nokuhanjiswa okungxamisekileyo iiyure ezingama-48.

· Inethiwekhi yezoThutho: Ukugubungela eYurophu, eMntla Melika, naseAsia-Pacific ngokuthutha ngomoya/ulwandle kunye nokupakishwa okulawulwa bubushushu.

5. Uphuhliso loBugcisa kunye.

· IiLabhoratri zoR&D ezidibeneyo: Sebenzisana ekwenzeni ngcono ukupakisha imodyuli yamandla eSiC (umz., ukuhlanganiswa kwe-substrate yeDBC).

· Ilayisenisi ye-IP: Ukubonelela ngelayisenisi yetekhnoloji yokukhula kwe-epitaxial ye-GaN-on-SiC RF ukunciphisa iindleko zophando nophuhliso lwabathengi.

Isishwankathelo

I-SiC (silicon carbide) seed crystal substrates, njengezinto ezicwangcisiweyo, ziphinda zibumbe imixokelelwane yezoshishino yehlabathi ngokusebenzisa iimpumelelo ekukhuleni kwekristale, ulawulo lweziphene, kunye nokuhlanganiswa okungafaniyo. Ngokuqhubeka nokuphucula ukunciphisa iziphene ze-wafer, ukwandisa imveliso ye-8-intshi, kunye nokwandisa amaqonga e-heteroepitaxial (umz., iSiC-on-Diamond), i-XKH inika izisombululo ezinokuthembeka okuphezulu nezingabizi kakhulu kwi-optoelectronics, amandla amatsha, kunye nokuveliswa okuphucukileyo. Ukuzinikela kwethu ekuveliseni izinto ezintsha kuqinisekisa ukuba abathengi bakhokela kwiinkqubo ze-carbon neutral kunye neenkqubo ezikrelekrele, beqhuba ixesha elilandelayo le-wide-bandgap semiconductor ecosystems.