8 Intshi yeLithium Niobate Wafer LiNbO3 LN wafer
Ulwazi oluneenkcukacha
| Ububanzi | 200±0.2mm |
| ubukhulu obukhulu | 57.5mm, iNotshi |
| Ukuqhelaniswa | 128Y-Sika, X-Sika, Z-Sika |
| Ukutyeba | 0.5±0.025mm, 1.0±0.025mm |
| Umphezulu | I-DSP kunye ne-SSP |
| TTV | <5µm |
| THOBEKA | ± (20µm ~40um) |
| I-Wap | <= 20µm ~ 50µm |
| I-LTV (5mmx5mm) | <1.5 um |
| I-PLTV(<0.5um) | ≥98% (5mm * 5mm) kunye ne-2mm edge engabandakanywayo |
| Ra | Ra<=5A |
| Krwela & Yomba (S/D) | 20/10, 40/20, 60/40 |
| Edge | Hlangana ne-SEMI M1.2@nge-GC800#. rhoqo kwi C uhlobo |
Iinkcukacha ezithe ngqo
Ububanzi:8 intshi (malunga ne-200mm)
Ukutyeba: Ubukhulu obuqhelekileyo obuqhelekileyo busuka kwi-0.5mm ukuya kwi-1mm. Obunye ubukhulu bunokwenziwa ngokweemfuno ezithile
Ukuqhelaniswa nekristale: Eyona nto ixhaphakileyo yokuqhelaniswa nekristale yi-128Y-cut, iZ-cut kunye ne-X-cut crystal orientation, kunye nokunye ukuqhelaniswa kwekristale kunokubonelelwa ngokuxhomekeke kwisicelo esithile.
Ubungakanani bezinto eziluncedo: Ii-intshi ezi-8 ze-serrata carp wafers zineengenelo ezininzi zobungakanani ngaphezu kweewafa ezincinci:
Ummandla omkhulu: Xa kuthelekiswa ne-6-intshi okanye i-4-intshi, ii-wafers ze-8-intshi zibonelela ngommandla omkhulu kwaye zikwazi ukufumana izixhobo ezininzi kunye neesekethe ezidibeneyo, okubangelwa ukunyuka kwemveliso kunye nesivuno.
Uxinaniso oluphezulu: Ngokusebenzisa ii-wafers ze-intshi ezi-8, izixhobo ezininzi kunye namacandelo anokuthi aphunyezwe kwindawo enye, ukwandisa ukudibanisa kunye noxinaniso lwesixhobo, oluthi luphucule ukusebenza kwesixhobo.
Ukulungelelaniswa okungcono: Ii-wafers ezinkulu zinokuhambelana okungcono kwinkqubo yokuvelisa, kunceda ukunciphisa ukuhlukahluka kwindlela yokuvelisa kunye nokuphucula ukuthembeka kwemveliso kunye nokuhambelana.
Ii-intshi ezisi-8 ze-L kunye ne-LN zafers zinedayamitha efanayo kunye nee-silicone wafers eziqhelekileyo kwaye kulula ukuzibophelela. Njengomsebenzi ophezulu "odibeneyo we-SAW filter" izinto ezinokubamba amabhendi aphezulu.
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