2 intshi 50.8mm iSapphire Wafer C-Plane M-plane R-plane R-plane A-plane Ukutyeba 350um 430um 500um

2 intshi 50.8mm iSapphire Wafer C-Plane M-plane R-plane R-plane A-plane Ukutyeba 350um 430um 500um Umfanekiso okhoyo

Inkcazelo emfutshane:

I-Sapphire yindibaniselwano ekhethekileyo yeempawu zomzimba, iikhemikhali kunye ne-optical, ezenza zikwazi ukumelana nobushushu obuphezulu, ukutshatyalaliswa kwe-thermal, ukukhukuliseka kwamanzi kunye nesanti, kunye nokukrazula.

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Ukuchazwa kweendlela ezahlukeneyo zokuqhelaniswa

Ukuqhelaniswa	C (0001)-Axis		R(1-102)-I-Axis		M(10-10) -Umgca	A(11-20)-Axis
Izinto eziphathekayo	I-C axis inokukhanya kwekristale, kwaye ezinye ii-axes zinokukhanya okungalunganga.IPlane C ithe tyaba, kubhetele ukuba isikwe.		Inqwelomoya ye-R inzima kancinci kuno-A.		Inqwelomoya i-M inyathelwe i-serrated, akukho lula ukuyisika, kulula ukuyisika.	Ubunzima be-A-plane buphezulu kakhulu kune-C-plane, ebonakaliswa ngokumelana nokugqoka, ukuxhathisa ukukrazula kunye nobunzima obuphezulu;I-Side A-plane yindiza ye-zigzag, ekulula ukuyinqumla;
Usetyenziso	I-C-oriented sapphire substrates isetyenziselwa ukukhulisa iifilimu ezifakwe kwi-III-V kunye ne-II-VI, ezifana ne-gallium nitride, enokuvelisa iimveliso ze-LED eziluhlaza, i-laser diodes, kunye nezicelo ze-infrared detector. Oku kubangelwa ukuba inkqubo yokukhula kwekristale yesafire ecaleni kwe-C-axis ikhulile, ixabiso liphantsi, iipropati zomzimba kunye neekhemikhali zizinzile, kwaye iteknoloji ye-epitaxy kwi-C-plane ikhulile kwaye izinzile.		Ukukhula kwe-R-oriented substrate ye-silicon extrasystals ediphozithiweyo eyahlukileyo, esetyenziswa kwiisekethe ezidibeneyo ze-microelectronics. Ukongeza, iisekethe ezidityanisiweyo ezinesantya esiphezulu kunye nezinzwa zoxinzelelo nazo zinokusekwa kwinkqubo yokuveliswa kwefilimu yokukhula kwe-silicon ye-epitaxial.I-substrate yohlobo lwe-R ingasetyenziselwa ukuveliswa kwelothe, amanye amacandelo e-superconducting, i-resistators ephezulu, i-gallium arsenide.		Isetyenziselwa ikakhulu ukukhulisa iifilimu ze-GaN ze-epitaxial ezingekho kwi-polar/semi-polar ukuphucula ukusebenza kakuhle okukhanyayo.	I-A-oriented to substrate ivelisa imvume efanayo / ephakathi, kunye neqondo eliphezulu lokugquma lisetyenziswa kwi-teknoloji ye-hybrid microelectronics.Ii-superconductors eziphezulu zobushushu zinokuveliswa kwi-A-base elongated crystals.
Ukusetyenzwa kwamandla	I-Pattern Sapphire Substrate (PSS) : Ngendlela yokuKhula okanye i-Etching, iipateni ze-nanoscale eziqhelekileyo eziqhelekileyo ze-microstructure ziyilwe kwaye zenziwe kwi-substrate yesafire ukulawula ukukhutshwa kokukhanya kwe-LED, kunye nokunciphisa iziphene ezahlukileyo phakathi kwe-GaN ekhulayo kwi-sapphire substrate. , ukuphucula umgangatho we-epitaxy, kunye nokuphucula ukusebenza kakuhle kwe-quantum yangaphakathi ye-LED kunye nokwandisa ukusebenza kakuhle kokutsalwa kokukhanya. Ukongeza, i-sapphire prism, isibuko, ilensi, umngxuma, i-cone kunye nezinye iinxalenye zesakhiwo zinokwenziwa ngokweemfuno zabathengi.
Isibhengezo sePropati	Ukuxinana	Ukuqina	inqaku lokunyibilika	Isalathiso se-refractive (esibonakalayo kunye ne-infrared)	Ugqithiso (DSP)	I-Dielectric rhoqo
Isibhengezo sePropati	3.98g/cm3	9(mohs)	2053℃	1.762~1.770	≥85%	11.58@300K kwi-C axis(9.4 kwi-axis)

Idayagram eneenkcukacha

i-avcasvb (1)

avcasvb (2)

avcasvb (3)

Ngaphambili: 8 Intshi yeLithium Niobate Wafer LiNbO3 LN wafer

Okulandelayo: 2 intshi 50.8mm Ukutyeba 0.1mm 0.2mm 0.43mm Sapphire Wafer C-Plane M-plane R-plane A-plane

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