I-GaN-On-Sapphire ye-6 intshi
I-150mm 6intshi GaN kwiSilicon/Sapphire/SiC Epi-layer wafer I-Gallium nitride epitaxial wafer
I-wafer yesafire substrate eyi-intshi ezi-6 sisixhobo se-semiconductor esikumgangatho ophezulu esenziwe ngamaleya e-gallium nitride (GaN) ekhuliswe kwi-substrate yesafire. Esi sixhobo sineempawu zothutho ze-elektroniki ezintle kwaye sifanelekile ukuvelisa izixhobo ze-semiconductor ezinamandla aphezulu kunye ne-frequency ephezulu.
Indlela yokuvelisa: Inkqubo yokuvelisa ibandakanya ukukhulisa iileya zeGaN kwi-substrate yesafire kusetyenziswa iindlela eziphambili ezifana ne-metal-organic chemical vapor deposition (MOCVD) okanye i-molecular beam epitaxy (MBE). Inkqubo yokuvelisa yenziwa phantsi kweemeko ezilawulwayo ukuqinisekisa umgangatho ophezulu wekristale kunye nefilimu efanayo.
Ukusetyenziswa kwe-6inch GaN-On-Sapphire: Iitships ze-sapphire ze-6-intshi zisetyenziswa kakhulu kunxibelelwano lwe-microwave, kwiinkqubo ze-radar, itekhnoloji engenazingcingo kunye ne-optoelectronics.
Ezinye izicelo eziqhelekileyo ziquka
1. Isikhulisi samandla se-Rf
2. Imboni yokukhanyisa i-LED
3. Izixhobo zonxibelelwano lwenethiwekhi ezingenazingcingo
4. Izixhobo ze-elektroniki kwindawo enobushushu obuphezulu
5. Izixhobo ze-Optoelectronic
Iinkcukacha zemveliso
- Ubungakanani: Ububanzi be-substrate buzii-intshi ezi-6 (malunga ne-150 mm).
- Umgangatho womphezulu: Umphezulu upholishwe kakuhle ukuze unike umgangatho ogqwesileyo wesipili.
- Ubukhulu: Ubukhulu bomaleko weGaN bunokwenziwa ngokwezifiso ngokweemfuno ezithile.
- Ukupakisha: Isiseko sipakishwe ngononophelo ngezinto ezichasene ne-static ukuthintela umonakalo ngexesha lokuthuthwa.
- Imiphetho yokubeka: I-substrate inemiphetho ethile yokubeka evumela ukulungelelaniswa nokusebenza ngexesha lokulungiselela isixhobo.
- Ezinye iiparameter: Iiparameter ezithile ezinje ngobuncinci, ukumelana noxinzelelo kunye noxinzelelo lwe-doping zinokulungiswa ngokweemfuno zabathengi.
Ngenxa yeempawu zazo eziphezulu zezinto kunye nokusetyenziswa kwazo ezahlukeneyo, ii-wafers ze-sapphire substrate ze-6-intshi ziyindlela ethembekileyo yokuphuhlisa izixhobo ze-semiconductor ezisebenzayo kakhulu kumashishini ahlukeneyo.
| I-substrate | 6” 1mm <111> uhlobo lwe-p Si | 6” 1mm <111> uhlobo lwe-p Si |
| I-Epi ThickAvg | ~5um | ~7um |
| I-Epi ThickUnif | <2% | <2% |
| Ukuqubuda | +/-45um | +/-45um |
| Ukuqhekeka | <5mm | <5mm |
| I-BV ethe nkqo | >1000V | >1400V |
| I-HEMT Al% | 25-35% | 25-35% |
| I-HEMT ThickAvg | 20-30nm | 20-30nm |
| I-Insitu SiN Cap | 5-60nm | 5-60nm |
| Ikhonkco le-2DEG. | ~1013cm-2 | ~1013cm-2 |
| Ukuhambahamba | ~2000cm2/Vs (<2%) | ~2000cm2/Vs (<2%) |
| I-Rsh | <330ohm/sq (<2%) | <330ohm/sq (<2%) |
Umzobo oneenkcukacha
