IiWafers zeSiC zeSilicon Carbide eziyi-6 intshi eziyi-150mm eziluhlobo lwe-4H-N zoPhando lweMveliso yeMOS okanye yeSBD kunye nodidi oluyiDummy

Inkcazo emfutshane:

I-substrate ye-silicon carbide single crystal substrate eyi-6-intshi sisixhobo esisebenza kakuhle kakhulu esineempawu zomzimba nezekhemikhali ezibalaseleyo. Yenziwe ngezinto ze-silicon carbide single crystal ezicocekileyo kakhulu, ibonisa ukuhanjiswa kobushushu okuphezulu, uzinzo loomatshini, kunye nokumelana nobushushu obuphezulu. Le substrate, eyenziwe ngeenkqubo zokwenza ngokuchanekileyo kunye nezixhobo ezikumgangatho ophezulu, iye yaba yinto ekhethwayo yokwenza izixhobo ze-elektroniki ezisebenzayo kakhulu kwiinkalo ezahlukeneyo.

Thumela i-imeyile kuthi

Iimbonakalo

IiNdawo zeSicelo

I-silicon carbide single crystal substrate eyi-6-intshi idlala indima ebalulekileyo kumashishini amaninzi. Okokuqala, isetyenziswa kakhulu kushishino lwe-semiconductor ekwenzeni izixhobo ze-elektroniki ezinamandla aphezulu ezifana nee-transistors zamandla, iisekethe ezidibeneyo, kunye neemodyuli zamandla. Ukuqhuba kwayo okuphezulu kobushushu kunye nokumelana nobushushu obuphezulu kwenza ukuba ubushushu bube ngcono, nto leyo ekhokelela ekusebenzeni ngcono nasekuthembekeni. Okwesibini, ii-silicon carbide wafers zibalulekile kumacandelo ophando ekuphuhlisweni kwezinto ezintsha kunye nezixhobo. Ukongeza, i-silicon carbide wafer ifumana ukusetyenziswa okukhulu kwicandelo le-optoelectronics, kubandakanya ukwenziwa kwee-LED kunye nee-laser diodes.

Iinkcukacha zeMveliso

I-substrate ye-silicon carbide enye ye-intshi ezi-6 inobubanzi obuzii-intshi ezi-6 (malunga ne-152.4 mm). Uburhabaxa bomphezulu yi-Ra < 0.5 nm, kwaye ubukhulu bayo buyi-600 ± 25 μm. I-substrate ingenziwa ngokwezifiso nge-N-type okanye i-P-type conductivity, ngokusekelwe kwiimfuno zabathengi. Ngaphezu koko, ibonisa uzinzo olukhethekileyo loomatshini, olukwaziyo ukumelana noxinzelelo kunye nokungcangcazela.

Ububanzi		150±2.0mm（6intshi）
Ubukhulu		350 μm±25μm
Ukuqhelaniswa		Kwi-axis: <0001>±0.5°		I-axis evaliweyo：4.0° ukuya kwi-1120±0.5°
Uhlobo lwePolytype		4H
Ukumelana (Ω·cm)	4H-N	0.015~0.028 Ω·cm/0.015~0.025ohm ·cm
	4/6H-SI	>1E5
Indlela ephambili yokujongwa ngokutyibilikayo		{10-10}±5.0°
Ubude obuphambili obuthe tyaba (mm)		47.5 mm±2.5 mm
Umphetho		I-Chamfer
I-TTV/Isaphetha/I-Warp (um)		≤15 /≤40 /≤60
I-AFM Front (uSi-face)		I-Polish Ra≤1 nm
		I-CMP Ra≤0.5 nm
I-LTV		≤3μm(10mm*10mm)	≤5μm(10mm*10mm)		≤10μm(10mm*10mm)
I-TTV		≤5μm	≤10μm		≤15μm
Ixolo eli-orenji/imingxunya/imifantu/ukungcola/amabala/imitya		Akukho nanye	Akukho nanye		Akukho nanye
ii-indents		Akukho nanye	Akukho nanye		Akukho nanye

I-substrate ye-silicon carbide enye ye-intshi ezi-6 sisixhobo esisebenza kakuhle esisetyenziswa kakhulu kumashishini e-semiconductor, uphando, kunye ne-and-electronics. Inika ukuhanjiswa kobushushu okugqwesileyo, uzinzo loomatshini, kunye nokumelana nobushushu obuphezulu, okwenza ifaneleke ukwenziwa kwezixhobo ze-elektroniki ezinamandla aphezulu kunye nophando olutsha lwezinto. Sinikezela ngeenkcukacha ezahlukeneyo kunye neendlela zokwenza ngokwezifiso ukuhlangabezana neemfuno ezahlukeneyo zabathengi.Nxibelelana nathi ukuze ufumane iinkcukacha ezithe vetshe malunga nee-wafers ze-silicon carbide!