I-6inch 150mm iSilicon Carbide SiC Wafers 4H-N uhlobo lweMOS okanye uPhando lweMveliso yeSBD kunye nebakala leDummy

I-6inch 150mm iSilicon Carbide SiC Wafers 4H-N uhlobo lweMOS okanye uPhando lweMveliso ye-SBD kunye nomgangatho weDummy oFakelweyo Umfanekiso

Inkcazelo emfutshane:

I-6-intshi ye-silicon carbide enye i-crystal substrate yinto ephezulu yokusebenza kunye neempawu ezibalaseleyo zomzimba kunye neekhemikhali. Yenziwe ukusuka kwi-silicon carbide enye ye-crystal material ecocekileyo, ibonisa i-conductivity ephezulu ye-thermal, ukuzinza komatshini, kunye nokumelana nobushushu obuphezulu. Le substrate, eyenziwe ngeenkqubo zokuvelisa ezichanekileyo kunye nezixhobo eziphezulu, iye yaba yinto ekhethiweyo yokwenziwa kwezixhobo zombane eziphezulu kwiinkalo ezahlukeneyo.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iinkalo zeSicelo

I-6-intshi ye-silicon carbide enye i-crystal substrate idlala indima ebalulekileyo kumashishini amaninzi. Okokuqala, isetyenziswa kakhulu kwishishini le-semiconductor ekwenzeni izixhobo zombane ezinamandla aphezulu ezifana neetransistors zamandla, iisekethe ezidibeneyo, kunye neemodyuli zamandla. I-conductivity yayo ephezulu ye-thermal kunye nokumelana nokushisa okuphezulu kwenza ukutshatyalaliswa kobushushu obungcono, okubangelwa ukuphucula ukusebenza kakuhle kunye nokuthembeka. Okwesibini, ii-silicon carbide wafers zibalulekile kwimimandla yophando kuphuhliso lwezixhobo ezitsha kunye nezixhobo. Ukongeza, i-silicon carbide wafer ifumana usetyenziso olubanzi kwicandelo le-optoelectronics, kubandakanya ukwenziwa kwee-LED kunye ne-laser diode.

IiNkcazo zeMveliso

I-6-intshi ye-silicon carbide enye i-crystal substrate inobubanzi obuyi-intshi ezi-6 (malunga ne-152.4 mm). Umphezulu uburhabaxa Ra <0.5 nm, kwaye ubukhulu yi 600 ± 25 μm. I-substrate ingenziwa ngokwezifiso kunye nohlobo lwe-N okanye uhlobo lwe-P, ngokusekelwe kwiimfuno zabathengi. Ngaphezu koko, ibonisa uzinzo olukhethekileyo lomatshini, olukwaziyo ukumelana noxinzelelo kunye nokungcangcazela.

Ububanzi		150±2.0mm(6intshi)
Ukutyeba		350 μm±25μm
Ukuqhelaniswa		Kwi-axis : <0001> ± 0.5 °		I-off axis:4.0° ukuya ku-1120±0.5°
Iipolytype		4H
Ukuxhathisa(Ω·cm)	4H-N	0.015~0.028 Ω·cm/0.015~0.025ohm ·cm
	4/6H-SI	>1E5
Ukuqhelaniswa neflethi ephambili		{10-10} ±5.0°
Ubude beflethi bokuqala (mm)		47.5 mm±2.5 mm
Edge		Chamfer
TTV / isaphetha / Warp (um)		≤15 /≤40 /≤60
I-AFM Front (Si-face)		IsiPolish Ra≤1 nm
		CMP Ra≤0.5 nm
LTV		≤3μm(10mm*10mm)	≤5μm(10mm*10mm)		≤10μm(10mm*10mm)
TTV		≤5μm	≤10μm		≤15μm
Amaxolo e-orenji/imingxuma/iintanda/ungcoliseko/amabala/amabala		Akukho nanye	Akukho nanye		Akukho nanye
iindenti		Akukho nanye	Akukho nanye		Akukho nanye

I-6-intshi ye-silicon carbide enye i-crystal substrate yinto ephezulu yokusebenza esetyenziswa ngokubanzi kwi-semiconductor, uphando, kunye ne-optoelectronics industries. Inika i-thermal conductivity egqwesileyo, ukuzinza komatshini, kunye nokumelana nobushushu obuphezulu, okwenza ukuba ilungele ukwenziwa kwezixhobo zombane ezinamandla aphezulu kunye nophando olutsha lwezinto. Sinikezela ngeenkcukacha ezahlukeneyo kunye neendlela zokwenza ngokwezifiso ukuhlangabezana neemfuno ezahlukeneyo zabathengi.Qhagamshelana nathi ngeenkcukacha ezithe kratya malunga ne-silicon carbide wafers!