150mm 6 intshi 0.7mm 0.5mm iSapphire Wafer Substrate Carrier C-Plane SSP/DSP

Inkcazelo emfutshane:

Zonke ezi ngasentla ziyinkcazo echanekileyo yeekristale zesafire. Ukusebenza okugqwesileyo kwekristale yesafire kwenza ukuba isetyenziswe ngokubanzi kwiindawo zobugcisa eziphezulu. Ngophuhliso olukhawulezayo lweshishini le-LED, imfuno yezinto zekristale yesafire nayo iyanda.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Usetyenziso

Usetyenziso lwee-intshi ze-6-intshi zesafire zibandakanya:

1. Ukuveliswa kwe-LED: i-sapphire wafer ingasetyenziselwa njenge-substrate ye-chips ze-LED, kwaye ubunzima bayo kunye ne-thermal conductivity inokuphucula ukuzinza kunye nobomi benkonzo yee-chips ze-LED.

2. Ukwenziwa kweLaser: I-Sapphire wafer ingasetyenziselwa njenge-substrate ye-laser, ukunceda ukuphucula ukusebenza kwe-laser kunye nokwandisa ubomi benkonzo.

3. Ukuveliswa kweSemiconductor: Iifalu zeSapphire zisetyenziswa ngokubanzi ekwenzeni izixhobo ze-elektroniki kunye ne-optoelectronic, kubandakanywa i-optical synthesis, iiseli zelanga, izixhobo ze-elektroniki ze-high-frequency, njl.

4. Ezinye izicelo: I-Sapphire wafer ingasetyenziselwa ukwenza isikrini sokuchukumisa, izixhobo zamehlo, iiseli zelanga zefilimu ezincinci kunye nezinye iimveliso eziphezulu.

Inkcazo

Izinto eziphathekayo	Ukucoceka okuphezulu kwekristale enye Al2O3, isafire yesafire.
Ubungakanani	150 mm +/- 0.05 mm, 6 intshi
Ukutyeba	1300 +/- 25 um
Ukuqhelaniswa	C indiza (0001) isuka ku-M (1-100) kwinqwelomoya 0.2 +/- 0.05 degree
Ukuqhelaniswa neflethi ephambili	Inqwelomoya +/- 1 idigri
Ubude beflethi bokuqala	47.5 mm +/- 1 mm
Ukwahluka koKutyeba ngokupheleleyo (TTV)	<20 um
Ukuqubuda	<25 um
I-Wap	<25 um
I-Coefficient yoKwandiswa kweThermal	6.66 x 10-6 / °C ngokuhambelana nomgca weC, 5 x 10-6 / °C perpendicular to C axis
Amandla eDielectric	4.8 x 105 V / cm
Dielectric Constant	11.5 (1 MHz) ecaleni komgca ongu-C, 9.3 (1 MHz) ngokuthe ngqo ukuya kumgca ongu-C
I-Dielectric Loss Tangent (eyaziwa ngokuba yi-dissipation factor)	ngaphantsi kwe-1 x 10-4
I-Thermal Conductivity	40 W/(mK) ku-20℃
Ukugudisa	icala elinye elikhazimlisiweyo (SSP) okanye icala eligudisiweyo eliphindwe kabini (DSP) Ra <0.5 nm (nge-AFM). Icala elingasemva le-SSP wafer lalingumhlaba olungileyo ukuya kuRa = 0.8 - 1.2 um.
Ugqithiso	88% +/-1 % @460 nm