I-wafer ye-SiC ye-4H/6H-P eyi-6intshi ye-Zero MPD yebanga leMveliso yeBanga eliyiDummy
I-4H/6H-P Uhlobo lwe-SiC Composite Substrates Itheyibhile yepharamitha eqhelekileyo
6 ububanzi be-intshi ye-Silicon Carbide (SiC) Substrate Inkcazo
| Ibanga | Imveliso ye-MPD engekhoyoIbanga (Z) Ibanga) | Imveliso EsemgangathweniIbanga (P) Ibanga) | Ibanga elingeyonyani (D Ibanga) | ||
| Ububanzi | 145.5 mm~150.0 mm | ||||
| Ubukhulu | 350 μm ± 25 μm | ||||
| Uqeqesho lweWafer | -Offi-axis: 2.0°-4.0°ukuya ku-[1120] ± 0.5° kwi-4H/6H-P, Kwi-axis:〈111〉± 0.5° kwi-3C-N | ||||
| Uxinano lweeMipayipi ezincinci | 0 cm-2 | ||||
| Ukuxhathisa | uhlobo lwe-p 4H/6H-P | ≤0.1 Ωꞏcm | ≤0.3 Ωꞏcm | ||
| uhlobo lwe-n 3C-N | ≤0.8 mΩꞏcm | ≤1 m Ωꞏcm | |||
| Uqhelaniso oluPhambili oluSicaba | 4H/6H-P | -{1010} ± 5.0° | |||
| 3C-N | -{110} ± 5.0° | ||||
| Ubude obuPhambili obuSicaba | 32.5 mm ± 2.0 mm | ||||
| Ubude obuSicaba beSibini | 18.0 mm ± 2.0 mm | ||||
| Ulwazelelelo lweSibini oluSicaba | I-silicon ijonge phezulu: 90° CW. ukusuka kwiPrime flat ± 5.0° | ||||
| Ukukhutshwa komda | 3 mm | 6 mm | |||
| I-LTV/TTV/Isaphetha/I-Warp | ≤2.5 μm/≤5 μm/≤15 μm/≤30 μm | ≤10 μm/≤15 μm/≤25 μm/≤40 μm | |||
| Uburhabaxa | I-Polish Ra≤1 nm | ||||
| I-CMP Ra≤0.2 nm | I-Ra≤0.5 nm | ||||
| Iimfanta zoMphetho ngokukhanya okuphezulu | Akukho nanye | Ubude obuqokelelweyo ≤ 10 mm, ubude obunye ≤2 mm | |||
| Iipleyiti zeHex Ngokukhanya Okuphezulu Kobungqingqwa | Indawo eqokelelweyo ≤0.05% | Indawo eqokelelweyo ≤0.1% | |||
| Iindawo zePolytype Ngokukhanya Okuphezulu | Akukho nanye | Indawo eqokelelweyo≤3% | |||
| Izinto ezibandakanyiweyo zeCarbon ezibonakalayo | Indawo eqokelelweyo ≤0.05% | Indawo eqokelelweyo ≤3% | |||
| Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu | Akukho nanye | Ubude obuqokelelweyo ≤1 × ububanzi besitya esisicaba | |||
| Iitships zomphetho eziphezulu ngokukhanya okunamandla | Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥0.2mm | 5 zivumelekile, ≤1 mm nganye | |||
| Ukungcoliswa komphezulu weSilicon Ngumandla aphezulu | Akukho nanye | ||||
| Ukupakisha | Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye | ||||
Amanqaku:
※ Imida yeziphene isebenza kumphezulu we-wafer yonke ngaphandle kwendawo engabandakanyiyo umphetho. # Imikrwelo kufuneka ijongwe ebusweni be-Si o
I-wafer ye-SiC ye-4H/6H-P ene-intshi ezi-6 ene-Zero MPD grade kunye ne-production okanye i-dummy grade isetyenziswa kakhulu kwizicelo ze-elektroniki eziphambili. Ukuqhuba kwayo okugqwesileyo kobushushu, i-voltage ephezulu yokuqhekeka, kunye nokumelana neendawo ezinzima kwenza ukuba ilungele izixhobo ze-elektroniki zamandla, ezifana neeswitshi ze-voltage ephezulu kunye nee-inverters. I-Zero MPD grade iqinisekisa iziphene ezincinci, ezibalulekileyo kwizixhobo ezithembekileyo kakhulu. Ii-wafers ze-production grade zisetyenziswa kwimveliso enkulu yezixhobo zamandla kunye nezicelo ze-RF, apho ukusebenza kunye nokuchaneka kubalulekile. Ii-wafers ze-dummy grade, kwelinye icala, zisetyenziselwa ukulinganisa inkqubo, ukuvavanya izixhobo, kunye ne-prototyping, okuvumela ulawulo lomgangatho oluhambelanayo kwiindawo zemveliso ye-semiconductor.
Iingenelo ze-substrates ze-N-type SiC ezidityanisiweyo ziquka
- Ukuqhuba okuphezulu kobushushu: I-wafer ye-4H/6H-P SiC isusa ubushushu ngokufanelekileyo, nto leyo eyenza ukuba ifaneleke ukusetyenziswa kwe-elektroniki kubushushu obuphezulu kunye namandla aphezulu.
- I-Voltage ephezulu yokuphazamiseka: Ukukwazi kwayo ukusingatha ii-voltage eziphezulu ngaphandle kokusilela kwenza ukuba ilungele ukusetyenziswa kwe-elektroniki yamandla kunye nezicelo zokutshintsha ii-voltage eziphezulu.
- Ibanga le-Zero MPD (Micro Pipe Defect): Uxinano oluncinci lweziphene luqinisekisa ukuthembeka okuphezulu kunye nokusebenza, nto leyo ebalulekileyo kwizixhobo ze-elektroniki ezifuna kakhulu.
- Inqanaba leMveliso yoMveliso oMkhulu: Ifanelekile kwimveliso enkulu yezixhobo ze-semiconductor ezisebenza kakuhle ezinemigangatho engqongqo yomgangatho.
- Ibanga eliyiDummy loVavanyo kunye noLungiso: Ivumela ukwenziwa ngcono kwenkqubo, ukuvavanywa kwezixhobo, kunye nomzekelo ngaphandle kokusebenzisa ii-wafers ezibiza kakhulu.
Lilonke, ii-wafers ze-SiC ze-4H/6H-P ezine-intshi ezi-6 ezine-Zero MPD grade, i-grade yemveliso, kunye ne-dummy grade zibonelela ngeenzuzo ezibalulekileyo kuphuhliso lwezixhobo ze-elektroniki ezisebenza kakuhle. Ezi wafers ziluncedo kakhulu kwizicelo ezifuna ukusebenza kubushushu obuphezulu, uxinano lwamandla aphezulu, kunye nokuguqulwa kwamandla okusebenzayo. I-Zero MPD grade iqinisekisa iziphene ezincinci ekusebenzeni okuthembekileyo nokuzinzileyo kwesixhobo, ngelixa ii-wafers ze-production grade zixhasa ukwenziwa okukhulu ngolawulo olungqongqo lomgangatho. Ii-wafers ze-dummy grade zibonelela ngesisombululo esingabizi kakhulu sokwenza ngcono inkqubo kunye nokulinganiswa kwezixhobo, okwenza zibe yinto ebalulekileyo ekwenzeni i-semiconductor echanekileyo kakhulu.
Umzobo oneenkcukacha
