4H/6H-P 6inch SiC wafer Zero MPD ibakala Production IBanga leDummy

4H/6H-P 6inch SiC wafer Zero MPD ibakala iMveliso IBanga leDummy IBanga loMfanekiso obonakalayo

Inkcazelo emfutshane:

Uhlobo lwe-4H / 6H-P uhlobo lwe-6-intshi ye-SiC sisixhobo se-semiconductor esisetyenziselwa ukuveliswa kwesixhobo sombane, esaziwa ngokuba yi-thermal conductivity egqwesileyo, i-voltage ephezulu yokuphuka, kunye nokuchasana nokushisa okuphezulu kunye nokubola. Ibanga lokuvelisa kunye ne-Zero MPD (i-Micro Pipe Defect) ibakala liqinisekisa ukuthembeka kwayo kunye nokuzinza kwi-electronics yamandla aphezulu. Iiwafers zodidi lwemveliso zisetyenziselwa ukwenziwa kwesixhobo esikhulu esinolawulo olungqongqo lomgangatho, ngelixa iiwafers zomgangatho we-dummy zisetyenziselwa ikakhulu inkqubo yolungiso kunye novavanyo lwezixhobo. Iimpawu ezibalaseleyo ze-SiC zenza ukuba isetyenziswe ngokubanzi kubushushu obuphezulu, i-high-voltage, kunye nezixhobo zombane ze-high-frequency, ezifana nezixhobo zamandla kunye nezixhobo ze-RF.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-4H / 6H-P Uhlobo lwe-SiC Composite Substrates Itheyibhile yepharamitha eqhelekileyo

6 intshi ubukhulu Silicon Carbide (SiC) Substrate Inkcazo

IBanga			Zero MPD ProductionIBanga (Z Ibanga)	Imveliso esemgangathweniIBanga (P Ibanga)	IBanga leDummy (D Ibanga)
Ububanzi			145.5 mm~150.0 mm
Ukutyeba			350 μm ± 25 μm
Iwafer Orientation			-Offi-axis: 2.0 ° -4.0 ° ukuya [1120] ± 0.5 ° ye-4H/6H-P, Kwi-axis:〈111〉± 0.5° ye-3C-N
Ukuxinana kweMibhobho			0 cm-2
Ukuxhathisa	p-uhlobo 4H/6H-P		≤0.1 Ωꞏcm		≤0.3 Ωꞏcm
	n-uhlobo 3C-N		≤0.8 mΩꞏcm		≤1 m Ωꞏcm
Ukuqhelaniswa neFlethi ePhambili		4H/6H-P	-{1010} ± 5.0°
		3C-N	-{110} ± 5.0°
Ubude beFlethi obuPhambili			32.5 mm ± 2.0 mm
Ubude beFlethi yesibini			18.0 mm ± 2.0 mm
Ukuqhelaniswa neFlethi yesibini			Ubuso beSilicon phezulu: 90° CW. ukusuka Prime flat ± 5.0 °
Ukungabandakanywa kuMda			3 mm		6 mm
LTV/TTV/Saphetha/Warp			≤2.5 μm/≤5 μm/≤15 μm/≤30 μm		≤10 μm/≤15 μm/≤25 μm/≤40 μm
Uburhabaxa			IsiPolish Ra≤1 nm
			I-CMP Ra≤0.2 nm		Ra≤0.5 nm
I-Edge Cracks ngokuKhanya okuPhakamileyo			Akukho nanye		Ubude obongezelekayo ≤ 10 mm, ubude obunye≤2 mm
Iipleyiti zeHex ngokuKhanya okuPhakamileyo			Indawo eyongezelekayo ≤0.05%		Indawo eyongezelekayo ≤0.1%
Iindawo zePolytype NgokuKhanya okuPhakamileyo			Akukho nanye		Indawo eyongezelekayo≤3%
Ukubandakanywa kweCarbon ebonakalayo			Indawo eyongezelekayo ≤0.05%		Indawo eyongezelekayo ≤3%
I-Silicon Surface Scratches ngokuKhanya okuPhakamileyo			Akukho nanye		Ubude obongezelekayo≤1×i-wafer idayamitha
I-Edge Chips iPhezulu ngokuKhanya okuKhanya			Akukho kuvunyelweyo ≥0.2mm ububanzi nobunzulu		I-5 ivunyelwe, ≤1 mm nganye
Ungcoliseko lweSilicon Surface ngoBunzulu obuPhezulu			Akukho nanye
Ukupakishwa			Iikhasethi ezininzi zewafer okanye iSingle Wafer Container

Amanqaku:

※ Imida yeziphene isebenza kuwo wonke umphezulu we-wafer ngaphandle kwendawo esecaleni yomphetho. # Imikrwelo kufuneka ijongwe kuSi face o

I-4H / 6H-P uhlobo lwe-6-intshi ye-SiC ye-wafer enezinga le-Zero MPD kunye nemveliso okanye ibakala le-dummy lisetyenziswa ngokubanzi kwizicelo ze-elektroniki eziphambili. I-thermal conductivity egqwesileyo, i-voltage ephezulu yokuqhekeka, kunye nokuchasana neendawo ezisingqongileyo kuyenza ilungele umbane wamandla, njengokutshintsha kwe-voltage ephezulu kunye nee-inverters. Ibakala le-Zero MPD liqinisekisa iziphene ezincinci, ezibaluleke kakhulu kwizixhobo ezithembeke kakhulu. Iiwafers zomgangatho wemveliso zisetyenziswa kwimveliso enkulu yezixhobo zamandla kunye nokusetyenziswa kweRF, apho ukusebenza kunye nokuchaneka kubalulekile. Ii-wafers ze-dummy-grade, kwelinye icala, zisetyenziselwa ukulungelelaniswa kwenkqubo, uvavanyo lwezixhobo, kunye neprototyping, eyenza ulawulo olungaguqukiyo lomgangatho kwiindawo zemveliso ye-semiconductor.

Izibonelelo ze-N-uhlobo lwe-SiC composite substrates ziquka

High Thermal Conductivity: I-wafer ye-SiC ye-4H / 6H-P ikhupha ngokufanelekileyo ukushisa, iyenze ifaneleke kwi-high-temperature kunye ne-high-power-high applications electronic.
Ukuqhekeka okuphezulu kweVoltage: Ukukwazi kwayo ukuphatha amandla ombane aphezulu ngaphandle kokusilela kuyenza ilungele umbane wamandla kunye nezicelo zokutshintsha amandla ombane aphezulu.
Zero MPD (Micro Pipe Defect) IBanga: Uxinaniso lwesiphene oluncinci luqinisekisa ukuthembeka okuphezulu kunye nokusebenza, okubaluleke kakhulu kwiimfuno zezixhobo zombane.
IBanga loMveliso lokuVeliswa koMninzi: Ifanelekile kwimveliso enkulu yezixhobo eziphezulu ze-semiconductor ezinemigangatho yomgangatho ongqongqo.
IBanga leDummy loVavanyo kunye nokuCalibration: Yenza ukuphuculwa kwenkqubo, ukuvavanywa kwezixhobo, kunye neprototyping ngaphandle kokusebenzisa iiwafers zodidi oluphezulu lwemveliso.

Lilonke, ii-4H/6H-P 6-intshi ze-SiC ii-wafers ezinebakala le-Zero MPD, ibakala lokuvelisa, kunye nebakala le-dummy zibonelela ngeenzuzo ezibalulekileyo kuphuhliso lwezixhobo zombane ezisebenza kakhulu. La mawafa aluncedo ngakumbi kwizicelo ezifuna ukusebenza kobushushu obuphezulu, ukuxinana kwamandla aphezulu, kunye noguqulo lwamandla olusebenzayo. Umgangatho we-Zero MPD uqinisekisa iziphene ezincinci ekusebenzeni kwesixhobo esithembekileyo nesizinzileyo, ngelixa ii-wafers zodidi lwemveliso zixhasa ukwenziwa kwezinto ezinkulu ezinolawulo olungqongqo lwekhwalithi. Ii-wafers ze-Dummy-grade zibonelela ngesisombululo esinexabiso elisebenzayo lokuphucula inkqubo kunye nokulinganisa izixhobo, zibenza zibe yimfuneko ekwenzeni i-semiconductor echanekileyo ephezulu.