4H-semi HPSI 2inch SiC substrate wafer Production Ibakala loPhando lweDummy

4H-semi HPSI 2inch SiC substrate wafer Imveliso Dummy Uphando Ibakala Umfanekiso ofakiweyo

Inkcazelo emfutshane:

I-2inch ye-silicon carbide enye ye-crystal substrate wafer sisixhobo esisebenza kakhulu esineempawu ezibalaseleyo zomzimba kunye neekhemikhali. Yenziwe ngezinto ezicocekileyo ze-silicon carbide enye yekristale ene-conductivity egqwesileyo ye-thermal, ukuzinza komatshini kunye nokumelana nobushushu obuphezulu. Ndiyabulela kwinkqubo yokulungiswa kokuchaneka okuphezulu kunye nezixhobo eziphezulu, le chip yenye yezinto ezikhethiweyo zokulungiswa kwezixhobo zombane eziphezulu kwiinkalo ezininzi.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-semi-insulating ye-silicon carbide substrate ye-SiC wafers

I-Silicon carbide substrate yahlulwe kakhulu ibe yi-conductive kunye ne-semi-insulating type, i-silicon carbide substrate ye-n-type substrate isetyenziselwa ubukhulu becala i-epitaxial GaN-based LED kunye nezinye izixhobo ze-optoelectronic, izixhobo zombane ze-SiC-based, njl., kunye ne-semi- Ukugquma iSiC silicon carbide substrate isetyenziselwa ikakhulu ukwenziwa kwe-epitaxial yezixhobo zerediyo zamandla aphezulu eGaN. Ukongeza kwi-high-purity semi-insulation HPSI kunye ne-SI semi-insulation yahlukile, i-high-purity semi-insulation carrier concentration ye-3.5 * 1013 ~ 8 * 1015 / cm3 uluhlu, kunye nokuhamba kwe-electron ephezulu; I-semi-insulation yimathiriyeli ephezulu yokuxhathisa, i-resistivity iphezulu kakhulu, isetyenziselwa i-substrates yesixhobo se-microwave, i-non-conductive.

Semi-insulating Silicon Carbide substrate sheet SiC wafer

Isakhiwo se-crystal ye-SiC sinquma umzimba wayo, ngokumalunga ne-Si kunye ne-GaAs, i-SiC ineempawu ezibonakalayo; ububanzi bebhendi enqatshelwe bukhulu, kufutshane namaxesha ama-3 eSi, ukuqinisekisa ukuba isixhobo sisebenza kumaqondo obushushu aphezulu phantsi kokuthembeka kwexesha elide; amandla intsimi breakdown liphezulu, 1O amaxesha ukuba Si, ukuqinisekisa ukuba umthamo ombane isixhobo, ukuphucula ixabiso ombane isixhobo; isantya elektroni saturation mkhulu, 2 amaxesha ukuba Si, ukwandisa frequency isixhobo kunye noxinaniso amandla; I-thermal conductivity iphezulu, ngaphezu kwe-Si, i-thermal conductivity iphezulu, i-thermal conductivity iphezulu, i-thermal conductivity iphezulu, i-thermal conductivity iphezulu, ngaphezu kwe-Si, i-thermal conductivity iphezulu, i-thermal conductivity iphezulu. I-conductivity ephezulu ye-thermal, ngaphezu kwe-3 amaxesha e-Si, ukwandisa amandla okutshatyalaliswa kobushushu besixhobo kunye nokuqonda i-miniaturization yesixhobo.