I-wafer ye-substrate ye-4H-semi HPSI 2inch SiC yemveliso ye-Dummy Research grade

I-substrate ye-silicon carbide yahlulwe ngokubanzi yaba yi-conductive kunye ne-semi-insulation type, i-substrate ye-silicon carbide eqhubayo ukuya kwi-n-type substrate isetyenziswa kakhulu kwi-epitaxial GaN-based LED kunye nezinye izixhobo ze-optoelectronic, izixhobo ze-elektroniki zamandla ezisekelwe kwi-SiC, njl.njl., kwaye i-semi-insulation ye-SiC silicon carbide substrate isetyenziswa kakhulu kwi-epitaxial yezixhobo zerediyo ezinamandla aphezulu ze-GaN. Ukongeza, i-high-purity semi-insulation HPSI kunye ne-SI semi-insulation zahlukile, i-high-purity semi-insulation carrier concentration yi-3.5 * 1013 ~ 8 * 1015/cm3 range, kunye nokuhamba okuphezulu kwe-electron; i-semi-insulation zizixhobo ezixhathisayo kakhulu, i-resistivity iphezulu kakhulu, isetyenziswa ngokubanzi kwi-substrate zezixhobo ze-microwave, ayiqhubi.

Iphepha le-SiC eliyi-Silicon Carbide substrate eliyi-semi-insulation wafer

Ulwakhiwo lwekristale yeSiC lumisela ubume bayo bomzimba, xa kuthelekiswa neSi kunye neGaAs, iSiC inayo kwiimpawu zomzimba; ububanzi bebhendi engavumelekanga bukhulu, kufutshane nokuphindwe kathathu kuneSi, ukuqinisekisa ukuba isixhobo sisebenza kumaqondo obushushu aphezulu phantsi kokuthembeka kwexesha elide; amandla entsimi yokuqhekeka aphezulu, aphindwe ka-1O kuneSi, ukuqinisekisa ukuba amandla evolthi yesixhobo, aphucula ixabiso levolthi yesixhobo; izinga le-electron lokugcwala likhulu, liphindwe ka-2 kuneSi, ukwandisa imvamisa kunye noxinano lwamandla esixhobo; ukuhanjiswa kobushushu kuphezulu, ngaphezu kweSi, ukuhanjiswa kobushushu kuphezulu, ukuhanjiswa kobushushu kuphezulu, ukuhanjiswa kobushushu kuphezulu, ukuhanjiswa kobushushu kuphezulu, ngaphezu kweSi, ukuhanjiswa kobushushu kuphezulu, ukuhanjiswa kobushushu kuphezulu. Ukuhanjiswa kobushushu okuphezulu, ngaphezu kokuphindwe kathathu kuneSi, kwandisa amandla okusasaza ubushushu esixhobo kunye nokuqaphela ukwenziwa kwesixhobo kube kuncinci.