3inch 76.2mm 4H-Semi SiC substrate wafer Silicon Carbide Semi-ethukayo SiC wafers

Inkcazelo emfutshane:

Umgangatho ophakamileyo we-crystal SiC wafer (iSilicon Carbide) kwishishini lombane kunye ne-optoelectronic. I-3inch SiC wafer sisizukulwana esilandelayo semiconductor imathiriyeli, isemi-insulating silicon-carbide wafers ezinobubanzi obuyi-intshi ezi-3. Iiwafers zenzelwe ukwenziwa kwamandla, iRF kunye nezixhobo ze-optoelectronics.

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Inkcazo

I-3-intshi ye-4H i-semi-insulated SiC (i-silicon carbide) ii-wafers ze-substrate zizinto eziqhelekileyo ezisetyenziswayo ze-semiconductor. I-4H ibonisa i-tetrahexahedral crystal structure. I-semi-insulation ithetha ukuba i-substrate ineempawu zokuxhathisa eziphezulu kwaye inokuba yodwa ngandlel 'ithile kumsinga wangoku.

I-wafers ye-substrate enjalo inezi mpawu zilandelayo: i-conductivity ephezulu ye-thermal, ilahleko ye-conduction ephantsi, ukumelana nobushushu obuphezulu, kunye nokuzinza okugqwesileyo komatshini kunye neekhemikhali. Ngenxa yokuba i-silicon carbide ine-gap ebanzi yamandla kwaye inokumelana nokushisa okuphezulu kunye neemeko eziphezulu zentsimi yombane, ii-wafers ze-4H-SiC ze-semi-insulated zisetyenziswa ngokubanzi kumandla ombane kunye nezixhobo zerediyo (RF).

Ezona zicelo ziphambili ze-4H-SiC ze-semi-insulated wafers ziquka:

I-1--Amandla ombane: ii-wafers ze-4H-SiC zingasetyenziselwa ukuvelisa izixhobo zokutshintsha amandla ezifana ne-MOSFETs (i-Metal Oxide Semiconductor Field Effect Transistors), ii-IGBT (i-Insulated Gate Bipolar Transistors) kunye ne-Schottky diode. Ezi zixhobo zineelahleko eziphantsi zokuqhuba kunye nokutshintsha kwi-voltage ephezulu kunye neendawo zokushisa eziphezulu kwaye zinika ukusebenza okuphezulu kunye nokuthembeka.

Izixhobo ze-2--Radio Frequency (RF): I-4H-SiC iiwafa ezifakwe kwi-semi-insulated zingasetyenziselwa ukwenza amandla aphezulu, i-RF frequency amplifiers, izichasi zetshiphu, izihluzi kunye nezinye izixhobo. I-Silicon carbide inomsebenzi ongcono we-high-frequency kunye nokuzinza kwe-thermal ngenxa yezinga layo elikhulu le-electron saturation drift kunye ne-thermal conductivity ephezulu.

I-3--Izixhobo ze-Optoelectronic: I-4H-SiC i-wafers e-semi-insulated ingasetyenziselwa ukuvelisa i-laser diodes yamandla aphezulu, i-UV i-detectors ukukhanya kunye neesekethe ezidibeneyo ze-optoelectronic.

Ngokubhekiselele kumkhombandlela wentengiso, imfuno ye-4H-SiC ye-semi-insulated wafers iyanda kunye nemimandla ekhulayo yombane wamandla, i-RF kunye ne-optoelectronics. Oku kubangelwa ukuba i-silicon carbide inoluhlu olubanzi lwezicelo, kubandakanywa ukusebenza kakuhle kwamandla, izithuthi zombane, amandla avuselelekayo kunye nonxibelelwano. Kwixesha elizayo, imakethi ye-4H-SiC ye-semi-insulated wafers ihlala ithembisa kakhulu kwaye kulindeleke ukuba ithathe indawo yezixhobo ze-silicon eziqhelekileyo kwizicelo ezahlukeneyo.