I-wafer ye-substrate ye-3 intshi engama-76.2mm eyi-4H-Semi SiC eyi-Silicon Carbide Iiwafer ze-SiC ezingcolisayo kancinci

I-wafer ye-substrate ye-3 intshi engama-76.2mm eyi-4H-Semi SiC eyi-Silicon Carbide Ii-wafer ze-SiC ezingcolisayo Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-wafer ye-SiC yekristale enye ekumgangatho ophezulu (iSilicon Carbide) ekumgangatho ophezulu ukuya kushishino lwe-elektroniki kunye ne-optoelectronic. I-wafer ye-SiC ye-3inch sisixhobo se-semiconductor sesizukulwana esilandelayo, ii-wafer ze-silicon-carbide ezikhuselayo ezizi-3-intshi ububanzi. Ezi wafer zenzelwe ukwenziwa kwezixhobo zamandla, i-RF kunye ne-optoelectronics.

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Iinkcukacha zeMveliso

Ii-wafers ze-substrate ze-4H ezi-3-intshi ezine-insulated SiC (silicon carbide) zizinto ezisetyenziswa kakhulu kwi-semiconductor. I-4H ibonisa ulwakhiwo lwekristale ye-tetrahexahedral. I-semi-insulation ithetha ukuba i-substrate ineempawu zokumelana okuphezulu kwaye inokwahlulwa kancinci kwi-current flow.

Ezi wafers ze-substrate zineempawu ezilandelayo: ukuhanjiswa kobushushu okuphezulu, ukulahleka kokuhanjiswa okuphantsi, ukumelana nobushushu obuphezulu kakhulu, kunye nozinzo oluhle kakhulu loomatshini kunye neekhemikhali. Ngenxa yokuba i-silicon carbide inesithuba esikhulu samandla kwaye inokumelana nobushushu obuphezulu kunye neemeko eziphezulu zombane, ii-wafers ze-4H-SiC ezifakwe i-semi-insulation zisetyenziswa kakhulu kwizixhobo ze-elektroniki zamandla kunye nerediyo (RF).

Eyona misebenzi iphambili yee-wafers ze-4H-SiC ezifakwe i-semi-insulation ziquka:

1--Ii-elektroniki zamandla: Ii-wafer ze-4H-SiC zingasetyenziselwa ukuvelisa izixhobo zokutshintsha umbane ezifana neeMOSFET (iiMetal Oxide Semiconductor Field Effect Transistors), ii-IGBT (ii-Insulated Gate Bipolar Transistors) kunye nee-Schottky diodes. Ezi zixhobo zinelahleko ephantsi yokuqhuba kunye nokutshintsha kwiindawo eziphezulu ze-voltage kunye nobushushu obuphezulu kwaye zibonelela ngokusebenza kakuhle kunye nokuthembeka okuphezulu.

Izixhobo zeRadio Frequency (RF) ezi-2: Iiwafers ze-4H-SiC ezifakwe i-semi-insulated zingasetyenziselwa ukwenza amandla aphezulu, ii-amplifiers zamandla e-RF eziphindaphindayo, ii-chip resistors, ii-filters, kunye nezinye izixhobo. I-Silicon carbide inamandla aphezulu okuqhuba i-frequency kunye nozinzo lobushushu ngenxa yesantya sayo esikhulu sokusasazwa kwe-electron kunye nokuqhuba okuphezulu kobushushu.

Izixhobo ze-Optoelectronic ezi-3: Ii-wafers ze-4H-SiC ezifakwe i-semi-insulation zingasetyenziselwa ukuvelisa ii-laser diodes ezinamandla aphezulu, ii-UV light detectors kunye nee-optoelectronic integrated circuits.

Ngokuphathelele kwicala lemarike, imfuno yee-wafers ze-4H-SiC ezifakwe i-semi-insulation iyanda ngokukhula kwamacandelo e-elektroniki yamandla, i-RF kunye ne-optoelectronics. Oku kungenxa yokuba i-silicon carbide ineendlela ezahlukeneyo zokusetyenziswa, kubandakanya ukusetyenziswa kakuhle kwamandla, izithuthi zombane, amandla ahlaziyekayo kunye nonxibelelwano. Kwixesha elizayo, imakethi yee-wafers ze-4H-SiC ezifakwe i-semi-insulation isathembisa kakhulu kwaye kulindeleke ukuba ithathe indawo yezixhobo ze-silicon eziqhelekileyo kwizicelo ezahlukeneyo.