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I-substrate ye-silicon carbide ye-2 intshi 6H-N ububanzi obuphindwe kabini obukhazimlisiweyo obuyi-50.8mm grade grade research grade

I-substrate ye-silicon carbide ye-intshi ezi-2 6H-N ububanzi obuphindwe kabini obukhazimlisiweyo obuyi-50.8mm grade production grade research grade Umfanekiso obonisiweyo
  • I-substrate ye-silicon carbide ye-2 intshi 6H-N ububanzi obuphindwe kabini obukhazimlisiweyo obuyi-50.8mm grade grade research grade
  • I-substrate ye-silicon carbide ye-2 intshi 6H-N ububanzi obuphindwe kabini obukhazimlisiweyo obuyi-50.8mm grade grade research grade
  • I-substrate ye-silicon carbide ye-2 intshi 6H-N ububanzi obuphindwe kabini obukhazimlisiweyo obuyi-50.8mm grade grade research grade

Inkcazo emfutshane:

I-silicon carbide (i-SiC), eyaziwa ngokuba yi-carborundum, yi-semiconductor equlethe i-silicon kunye ne-carbon enefomyula yekhemikhali i-SiC. I-SiC isetyenziswa kwizixhobo ze-elektroniki ze-semiconductor ezisebenza kumaqondo obushushu aphezulu okanye kwii-voltage eziphezulu, okanye zombini. I-SiC ikwayenye yezona zinto zibalulekileyo ze-LED, sisixhobo esidumileyo sokukhulisa izixhobo ze-GaN, kwaye ikwasebenza njengesisasazi sobushushu kwii-LED ezinamandla aphezulu.
Iiwafer ze-silicon carbide zizinto ezisebenza kakhulu ezisetyenziswa ekuveliseni izixhobo ze-elektroniki. Zenziwe ngomaleko we-silicon carbide kwi-silicon crystal dome kwaye ziyafumaneka kwiindidi ezahlukeneyo, iintlobo kunye nokugqitywa komphezulu. Iiwafers zinobume obuthe tyaba beLambda/10, obuqinisekisa umgangatho ophezulu kunye nokusebenza kakuhle kwezixhobo ze-elektroniki ezenziwe ngeewafers. Iiwafer ze-silicon carbide zilungele ukusetyenziswa kwi-electronics enamandla, iteknoloji ye-LED kunye neesensors eziphambili. Sinikezela ngeewafer ze-silicon carbide ezikumgangatho ophezulu (sic) kumashishini e-electronics kunye ne-photonics.


Iimbonakalo

Ezi zilandelayo ziimpawu ze-wafer ye-silicon carbide ye-2inch:

1. Ukumelana ngcono nemisebe: Ii-SIC wafers zinokumelana okunamandla nemisebe, nto leyo ezenza zifaneleke ukusetyenziswa kwiindawo ezinemitha. Imizekelo ibandakanya i-spacecraft kunye ne-nuclear facilities.

2. Ubunzima obuphezulu: Ii-SIC wafers zinzima kune-silicon, nto leyo eyomeleza ukuqina kwee-wafers ngexesha lokucubungula.

3. I-dielectric constant esezantsi: I-dielectric constant yee-SIC wafers iphantsi kuneye-silicon, enceda ekunciphiseni amandla e-parasite kwisixhobo kunye nokuphucula ukusebenza kwe-high-frequency.

4. Isantya esiphezulu sokukhukhuleka kwee-electron ezigcweleyo: Ii-SIC wafers zinesantya esiphezulu sokukhukhuleka kwee-electron ezigcweleyo kune-silicon, nto leyo enika izixhobo ze-SIC ithuba elihle kwiindlela ezisetyenziswa rhoqo.

5. Ubuninzi bamandla: Ngeempawu ezingentla, izixhobo ze-SIC wafer zinokuvelisa amandla aphezulu ngobukhulu obuncinci.

I-wafer ye-silicon carbide ye-2inch inezicelo ezininzi.
1. Ii-elektroniki zamandla: Ii-wafer ze-SiC zisetyenziswa kakhulu kwizixhobo zamandla ze-elektroniki ezifana nee-power converters, ii-inverters, kunye nee-high-voltage switches ngenxa ye-high breakdown voltage yazo kunye neempawu zokulahleka kwamandla aphantsi.

2. Iimoto zombane: Ii-silicon carbide wafers zisetyenziswa kwizixhobo zombane ukuphucula ukusebenza kakuhle nokunciphisa ubunzima, nto leyo ekhokelela ekutshajeni ngokukhawuleza kunye nokuqhuba ixesha elide.

3. Amandla avuselelekayo: Ii-silicon carbide wafers zidlala indima ebalulekileyo kwizicelo zamandla avuselelekayo ezifana nee-solar inverters kunye neenkqubo zamandla omoya, ziphucula ukusebenza kakuhle kokuguqulwa kwamandla kunye nokuthembeka.

4. I-Aerospace kunye noKhuselo: Ii-SiC wafers zibalulekile kwishishini leenqwelo-moya kunye nokhuselo kwizicelo zobushushu obuphezulu, amandla aphezulu kunye nokumelana nemitha, kubandakanya iinkqubo zamandla eenqwelo-moya kunye neenkqubo zeradar.

I-ZMSH ibonelela ngeenkonzo zokwenza ngokwezifiso iimveliso zee-wafer zethu ze-silicon carbide. Ii-wafer zethu zenziwe ngee-layers ze-silicon carbide ezikumgangatho ophezulu ezivela eTshayina ukuqinisekisa ukuqina nokuthembeka. Abathengi banokukhetha kwiindidi kunye neenkcukacha ze-wafer esizikhethileyo ukuhlangabezana neemfuno zabo ezithile.

Iiwafer zethu zeSilicon Carbide ziza ngeemodeli ezahlukeneyo kunye nobukhulu obahlukeneyo, imodeli yiSilicon Carbide.

Sinikezela ngeendlela ezahlukeneyo zokunyanga umphezulu kuquka ukupholisha icala elinye/eliphindwe kabini kunye noburhabaxa bomphezulu obuyi-≤1.2nm kunye ne-Lambda/10 ethe tyaba. Sikwabonelela ngeendlela zokumelana okuphezulu/okuphantsi ezinokwenziwa ngokwezifiso ngokweemfuno zakho. I-EPD yethu ye-≤1E10/cm2 iqinisekisa ukuba ii-wafers zethu zihlangabezana nemigangatho ephezulu yoshishino.

Sijongene neenkcukacha zonke zephakheji, ukucoca, ukunganyangeki, unyango lokukhwankqiswa. Ngokwenani kunye nokuma kwemveliso, siza kuthatha inkqubo eyahlukileyo yokupakisha! Phantse ngeekhasethi ze-wafer enye okanye ikhasethi ezingama-25 kwigumbi lokucoca elikumgangatho we-100.

Umzobo oneenkcukacha

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