I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer Double Polished Conductive Prime Grade Mos Grade

Inkcazo emfutshane:

I-substrate ye-silicon Carbide (SiC) ye-single-crystal substrate ye-6H n-type sisixhobo esibalulekileyo se-semiconductor esisetyenziswa kakhulu kwizicelo ze-elektroniki ezinamandla aphezulu, amaza aphezulu, kunye nobushushu obuphezulu. Idume ngesakhiwo sayo sekristale esinama-hexagonal, i-6H-N SiC inika i-bandgap ebanzi kunye nokuqhuba okuphezulu kobushushu, okwenza ukuba ilungele iindawo ezixineneyo.
Intsimi yombane eqhekekileyo kakhulu yale nto kunye nokuhamba kwee-electron kwenza kube lula ukuphuhliswa kwezixhobo ze-elektroniki ezinamandla nezisebenzayo, ezifana neeMOSFET kunye nee-IGBT, ezinokusebenza kwiivolthi eziphezulu kunye namaqondo obushushu kunalawo enziwe nge-silicon yendabuko. Ukuqhuba kwayo okugqwesileyo kobushushu kuqinisekisa ukuchithwa kobushushu okusebenzayo, okubalulekileyo ekugcineni ukusebenza kunye nokuthembeka kwizicelo zamandla aphezulu.
Kwizicelo ze-radiofrequency (RF), iipropati ze-6H-N SiC zixhasa ukudalwa kwezixhobo ezikwaziyo ukusebenza kumaza aphezulu ngokusebenza kakuhle okuphuculweyo. Uzinzo lwayo lweekhemikhali kunye nokumelana kwayo nemitha kuyenza ifaneleke ukusetyenziswa kwiindawo ezinobungozi, kuquka amacandelo eenqwelo moya kunye nezokhuselo.
Ngaphezu koko, ii-substrates ze-6H-N SiC zibalulekile kwizixhobo ze-optoelectronic, ezifana nee-ultraviolet photodetectors, apho i-bandgap yazo ebanzi ivumela ukufunyanwa kokukhanya kwe-UV okusebenzayo. Ukudibana kwezi mpawu kwenza i-6H n-type SiC ibe yinto eguquguqukayo neyimfuneko ekuphuculeni ubuchwepheshe be-elektroniki kunye ne-optoelectronic banamhlanje.

Thumela i-imeyile kuthi

Iimbonakalo

Ezi zilandelayo ziimpawu ze-silicon carbide wafer:

· Igama leMveliso: I-SiC Substrate
· Ulwakhiwo olunesiqingatha: Iipropati ze-elektroniki ezikhethekileyo.
· Ukuhamba kwe-Electron ephezulu: ~600 cm²/V·s.
· Uzinzo lweekhemikhali: Ayimelani nokugqwala.
· Ukumelana nemitha: Ifanelekile kwiindawo ezinobungozi.
· Uxinzelelo oluphantsi lwe-Intrinsic Carrier: Isebenza kakuhle kumaqondo obushushu aphezulu.
· Ukuqina: Iipropati eziqinileyo zoomatshini.
· Ubuchule be-Optoelectronic: Ukuchonga ukukhanya kwe-UV okusebenzayo.

I-silicon carbide wafer inezicelo ezininzi

Izicelo ze-SiC wafer:
Ii-substrates ze-SiC (Silicon Carbide) zisetyenziswa kwizicelo ezahlukeneyo zokusebenza okuphezulu ngenxa yeempawu zazo ezikhethekileyo ezifana nokuqhuba okuphezulu kobushushu, amandla aphezulu entsimi yombane, kunye ne-wide bandgap. Nazi ezinye zezicelo:

1. Izixhobo zombane zamandla:
·IiMOSFET ezine-voltage ephezulu
·IGBTs (iiTransistors zeBipolar Gate ezifakwe i-Insulated Gate)
·Iidiode zeSchottky
·Ii-inverters zamandla

2. Izixhobo eziQhelekileyo kakhulu:
·Izikhulisi zeRF (Radio Frequency)
·Ii-transistors ze-microwave
Izixhobo ze-millimeter-wave

3. Ii-elektroniki ezisebenzisa ubushushu obuphezulu:
·Iisensa kunye neesekethe zeendawo ezinobungozi
·Izixhobo ze-elektroniki ze-aerospace
·Ii-elektroniki zeemoto (umz., iiyunithi zokulawula iinjini)

4. Optoelectronics:
·Izixhobo zokubona iifoto ze-Ultraviolet (UV)
·Iidayidi ezikhupha ukukhanya (ii-LED)
·Iidayidi zelaser

5. Iinkqubo zamandla avuselelekayo:
·Ii-inverters zelanga
·Ii-converter ze-turbine yomoya
·Iindlela zombane zezithuthi zombane

6. Ezemizi-mveliso nezoKhuselo:
·Iinkqubo zeradar
·Unxibelelwano lwesathelayithi
· Izixhobo zesixhobo senyukliya

Ukwenziwa ngokwezifiso kwe-SiC wafer

Singakwazi ukwenza ngokwezifiso ubungakanani be-substrate ye-SiC ukuze ihlangabezane neemfuno zakho ezithile. Sikwabonelela nge-wafer ye-4H-Semi HPSI SiC enobukhulu be-10x10mm okanye i-5x5 mm.
Ixabiso limiselwa yityala, kwaye iinkcukacha zokupakisha zingenziwa ngokwezifiso zakho.
Ixesha lokuhanjiswa liphakathi kweeveki ezi-2-4. Samkela intlawulo nge-T/T.
Umzi-mveliso wethu unezixhobo zemveliso eziphambili kunye neqela lobuchwephesha, elinokwenza ngokwezifiso iinkcukacha ezahlukeneyo, ubukhulu kunye neemilo ze-wafer ye-SiC ngokweemfuno ezithile zabathengi.