I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer ekhazimliswe ngokuphindiweyo eqhuba iBanga leMos

I-2Inch 6H-N Silicon Carbide Substrate Sic Wafer ekhazimliswe ngokuphindiweyo eConductive kwiBanga leMos iBanga eliFakelweyo

Inkcazelo emfutshane:

I-6H n-type Silicon Carbide (SiC) i-single-crystal substrate yinto ebalulekileyo ye-semiconductor esetyenziswa kakhulu kumandla aphezulu, i-high-frequency, kunye ne-high-temperature applications electronic. Eyaziwayo ngesakhiwo sekristale esine-hexagonal, i-6H-N SiC inikezela ngebhendi ebanzi kunye ne-thermal conductivity ephezulu, iyenza ilungele iimeko ezibango.
Ukonakaliswa okuphezulu kwentsimi yombane kunye nokuhamba kwe-electron kuvumela uphuhliso lwezixhobo zombane ezisebenzayo, ezifana ne-MOSFETs kunye nee-IGBTs, ezinokusebenza kumbane ophezulu kunye namaqondo obushushu kunezo zenziwe kwi-silicon yendabuko. I-conductivity yayo ye-thermal egqwesileyo iqinisekisa ukutshatyalaliswa kokushisa okusebenzayo, okubalulekileyo ekugcineni ukusebenza kunye nokuthembeka kwizicelo eziphezulu zamandla.
Kwizicelo ze-radiofrequency (RF), iipropati ze-6H-N SiC zixhasa ukudalwa kwezixhobo ezikwazi ukusebenza kwiifrikhwensi eziphezulu kunye nokusebenza okuphuculweyo. Ukuzinza kwayo kweekhemikhali kunye nokuchasana nemitha kwakhona kuyenza ifaneleke ukusetyenziswa kwindawo enzima, kubandakanywa i-aerospace kunye necandelo lokukhusela.
Ngaphaya koko, ii-substrates ze-6H-N SiC ziyadityaniswa nezixhobo ze-optoelectronic, ezinje nge-ultraviolet photodetectors, apho i-bandgap yazo ebanzi ivumela ukubonwa kokukhanya kwe-UV. Ukudityaniswa kwezi propati kwenza i-6H n-uhlobo lwe-SiC ibe yimathiriyeli eguquguqukayo neyimfuneko ekuqhubeleni phambili itekhnoloji yanamhlanje ye-elektroniki kunye ne-optoelectronic.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Ezi zilandelayo ziimpawu ze-silicon carbide wafer:

· Igama leMveliso: I-SiC Substrate
· Ulwakhiwo lwe-Hexagonal: Iipropati zombane ezizodwa.
· High Electron Mobility: ~ 600 cm²/V·s.
· Uzinzo kwiMichiza: Ukumelana nokubola.
· Ukumelana neRadiation: Ilungele indawo ezingqongileyo ezirhabaxa.
· I-Low Intrinsic Carrier Concentration: Isebenza kakuhle kumaqondo obushushu aphezulu.
· Ukuqina: Iimpawu ezinamandla zoomatshini.
· Ubuchule be-Optoelectronic: Ukubona ukukhanya kwe-UV okusebenzayo.

I-Silicon carbide wafer inezicelo ezininzi

Izicelo zeSiC wafer:
Ii-substrates ze-SiC (i-Silicon Carbide) zisetyenziswa kwizicelo ezahlukeneyo zokusebenza okuphezulu ngenxa yeempawu zazo ezizodwa ezifana ne-thermal conductivity ephezulu, amandla aphezulu ombane, kunye ne-bandgap ebanzi. Nazi ezinye izicelo:

1.Amandla oMbane:
·Ii-MOSFETs ezinombane ophezulu
·IGBTs (I-Insulated Gate Bipolar Transistors)
·Schottky diodes
·Iziguquli zamandla

2.Izixhobo zeFrequency ephezulu:
·RF (Radio Frequency) izikhulisa-zwi
·Ii-Microwave transistors
·Izixhobo zamaza emilimitha

3.I-Electronics yobushushu obuphezulu:
·Izinzwa kunye neesekethe zommandla ongqwabalala
·Izixhobo ze-elektroniki ze-Aerospace
·Ii-auto electronics (umzekelo, iiyunithi zokulawula injini)

4.Optoelectronics:
·Izixhobo zokufota zeUltraviolet (UV).
·Iidiyodi ezikhupha ukukhanya (iiLED)
·Ilaser diode

5.IiNkqubo zaMandla aVuselelwayo:
·Iziguquli zelanga
· Iziguquli zeinjini yomoya
·Iimoto zombane zokuqeqesha amandla

6.Ishishini kunye noKhuselo:
·Iinkqubo zerada
·Unxibelelwano ngesathelayithi
·Isixhobo sereactor yenyukliya

SiC wafer Customization

Sinokwenza ubungakanani be-SiC substrate ukuhlangabezana neemfuno zakho ezithile. Sikwanikezela nge-4H-Semi HPSI SiC wafer enobungakanani be-10x10mm okanye 5x5 mm.
Ixabiso linqunywe yimeko, kwaye iinkcukacha zokupakisha zingenziwa ngokwezifiso zakho.
Ixesha lokuhambisa liphakathi kweeveki ezi-2-4. Siyayamkela intlawulo nge-T/T.
Umzi-mveliso wethu unezixhobo zokuvelisa eziphucukileyo kunye neqela lobugcisa, elinokwenza ngokwezifiso iinkcukacha ezahlukeneyo, ubukhulu kunye neemilo ze-SiC wafer ngokweemfuno ezithile zabathengi.