I-200mm 8inch GaN kwi-substrate ye-sapphire ye-Epi-layer wafer

I-200mm 8intshi GaN kwi-sapphire Epi-layer wafer substrate Umfanekiso obonisiweyo

Inkcazo emfutshane:

Inkqubo yokuvelisa ibandakanya ukukhula kwe-epitaxial yomaleko we-GaN kwi-substrate yeSapphire kusetyenziswa iindlela eziphambili ezifana ne-metal-organic chemical vapor deposition (MOCVD) okanye i-molecular beam epitaxy (MBE). Ukufakwa kwenziwa phantsi kweemeko ezilawulwayo ukuqinisekisa umgangatho ophezulu wekristale kunye nokufana kwefilimu.

Thumela i-imeyile kuthi

Iimbonakalo

Intshayelelo yemveliso

I-substrate ye-GaN-on-Sapphire eyi-intshi ezi-8 yimpahla ye-semiconductor ekumgangatho ophezulu eyenziwe lulwaleko lweGallium Nitride (GaN) olukhuliswe kwi-substrate yeSapphire. Le mpahla ineempawu zothutho ze-elektroniki ezibalaseleyo kwaye ifanelekile ekwenziweni kwezixhobo ze-semiconductor ezinamandla aphezulu kunye ne-frequency ephezulu.

Indlela Yokuvelisa

Izicelo

I-substrate ye-GaN-on-Sapphire eyi-intshi ezi-8 ifumana usetyenziso olubanzi kwiindawo ezahlukeneyo kubandakanya unxibelelwano lwe-microwave, i-radarsystems, itekhnoloji engenazingcingo, kunye ne-optoelectronics. Ezinye zezicelo eziqhelekileyo ziquka:

1. Izikhulisi zamandla zeRF

2. Imboni yokukhanyisa i-LED

3. Izixhobo zonxibelelwano lwenethiwekhi ezingenazingcingo

4. Izixhobo ze-elektroniki kwiindawo ezinobushushu obuphezulu

5. Oizixhobo ze-ptoelectronic

Iinkcukacha zeMveliso

-Ubukhulu: Ubungakanani besiseko buzii-intshi ezi-8 (200 mm) ububanzi.

- Umgangatho womphezulu: Umphezulu ukhazimlisiwe ukuya kwinqanaba eliphezulu lokuthamba kwaye ubonisa umgangatho ogqwesileyo ofana nesipili.

- Ubukhulu: Ubukhulu beleyara yeGaN bunokwenziwa ngokwezifiso ngokusekelwe kwiimfuno ezithile.

- Ukupakisha: I-substrate ipakishwe ngononophelo kwizinto ezingashukumiyo ukuthintela umonakalo ngexesha lokuhamba.

- I-Orientation Flat: I-substrate ine-orientation flat ethile ukunceda ekulungelelaniseni nasekuphatheni i-wafer ngexesha leenkqubo zokwenza isixhobo.

- Ezinye iiparameter: Iinkcukacha zobukhulu, ukumelana noxinzelelo, kunye noxinzelelo lwe-dopant zinokulungiswa ngokweemfuno zabathengi.

Ngenxa yeempawu zayo eziphezulu zezinto ezibonakalayo kunye nokusetyenziswa okuguquguqukayo, i-substrate ye-GaN-on-Sapphire eyi-8-intshi lukhetho oluthembekileyo lophuhliso lwezixhobo ze-semiconductor ezisebenza kakuhle kumashishini ahlukeneyo.

Ngaphandle kweGaN-On-Sapphire, singanikezela kwicandelo lezicelo zezixhobo zamandla, usapho lwemveliso luquka ii-wafers ze-epitaxial ze-AlGaN/GaN-on-Si ezi-8-intshi kunye nee-wafers ze-epitaxial ze-P-cap ze-AlGaN/GaN-on-Si ezi-8-intshi. Kwangaxeshanye, siqalise usetyenziso lwetekhnoloji yaso ye-epitaxy ye-GaN epitaxy ephucukileyo e-8-intshi kwintsimi ye-microwave, saza saphuhlisa i-wafer ye-epitaxy ye-AlGaN/GAN-on-HR Si e-8-intshi edibanisa ukusebenza okuphezulu kunye nobukhulu obukhulu, ixabiso eliphantsi kwaye ihambelana nokusetyenzwa kwesixhobo esiqhelekileyo se-8-intshi. Ukongeza kwi-gallium nitride esekwe kwi-silicon, sikwanayo noluhlu lwemveliso yee-wafers ze-epitaxial ze-AlGaN/GaN-on-SiC ukuhlangabezana neemfuno zabathengi zezinto ze-epitaxial ze-gallium nitride esekwe kwi-silicon.