200mm 8inch GaN kwisapphire Epi-layer wafer substrate

200mm 8inch GaN kwisapphire I-Epi-layer wafer substrate Umfanekiso obonakalayo

Inkcazelo emfutshane:

Inkqubo yokuvelisa ibandakanya ukukhula kwe-epitaxial yomaleko we-GaN kwi-substrate ye-Sapphire usebenzisa ubuchule obuphambili obufana ne-metal-organic chemical vapor deposition (MOCVD) okanye i-molecular beam epitaxy (MBE). I-deposition iqhutyelwa phantsi kweemeko ezilawulwayo ukuze kuqinisekiswe umgangatho ophezulu we-crystal kunye nokufana kwefilimu.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Intshayelelo yemveliso

I-8-intshi ye-GaN-on-Sapphire substrate yimathiriyeli yomgangatho ophezulu we-semiconductor eyenziwe ngumaleko we-Gallium Nitride (GaN) ekhulile kwi-Sapphire substrate. Esi sixhobo sinikezela ngeempawu ezibalaseleyo zothutho lwe-elektroniki kwaye zilungele ukwenziwa kwezixhobo ze-semiconductor zamandla aphezulu kunye ne-frequency ephezulu.

Indlela Yokuvelisa

Usetyenziso

I-8-intshi ye-GaN-on-Sapphire substrate ifumana izicelo ezibanzi kwiinkalo ezahlukeneyo ezibandakanya unxibelelwano lwe-microwave, i-radarsystems, iteknoloji engenazintambo, kunye ne-optoelectronics. Ezinye zezicelo eziqhelekileyo ziquka:

1. Izandisi zamandla zeRF

2. Ishishini lokukhanyisa i-LED

3. Izixhobo zonxibelelwano zenethiwekhi ezingenazingcingo

4. Izixhobo zombane kwiindawo ezinobushushu obuphezulu

5. Oizixhobo ze-ptoelectronic

IiNkcazo zeMveliso

-Ubungakanani: Ubungakanani be-substrate yi-intshi ezi-8 (200 mm) ububanzi.

-Umgangatho womphezulu: Umphezulu ukhazimlisiwe ukuya kwinqanaba eliphezulu lokuguda kwaye ubonisa umgangatho obalaseleyo njengesipili.

- Ukutyeba: Ubukhulu bomaleko we-GaN bunokwenziwa ngokwezifiso ngokusekelwe kwiimfuno ezithile.

- Ukupakishwa: I-substrate ihlanganiswe ngokucophelela kwizinto ezichasene ne-static ukukhusela umonakalo ngexesha lokuhamba.

-IFlethi yokuJonga: I-substrate ineflethi yokuqhelanisa ethile ukunceda ukulungelelaniswa kwe-wafer kunye nokuphatha ngexesha leenkqubo zokwenziwa kwesixhobo.

-Ezinye iiparamitha: Izinto ezithe ngqo zobunzima, ukumelana, kunye noxinzelelo lwe-dopant zinokulungiswa ngokweemfuno zomthengi.

Ngeempawu zayo eziphezulu zezinto eziphathekayo kunye nokusetyenziswa okuguquguqukayo, i-8-intshi ye-GaN-on-Sapphire substrate lukhetho oluthembekileyo lokuphuhliswa kwezixhobo eziphezulu ze-semiconductor kumashishini ahlukeneyo.

Ngaphandle kwe-GaN-On-Sapphire, sinokunikezela kwakhona kwintsimi yezicelo zesixhobo samandla, intsapho yemveliso iquka i-8-inch AlGaN / GaN-on-Si epitaxial wafers kunye ne-8-inch P-cap AlGaN / GaN-on-Si epitaxial amaqebengwana. Kwangelo xesha, siye sayila ukusetyenziswa kobuchwephesha be-epitaxy ye-8-intshi ye-GaN kwibala le-microwave, kwaye saphuhlisa i-8-intshi ye-AlGaN/GAN-on-HR Si epitaxy wafer edibanisa ukusebenza okuphezulu kunye nobukhulu obukhulu, ixabiso eliphantsi. kwaye iyahambelana nomgangatho we-8-intshi ukusetyenzwa kwesixhobo. Ukongeza kwi-silicon-based gallium nitride, sikwanayo nomgca wemveliso we-AlGaN/GaN-on-SiC epitaxial wafers ukuhlangabezana neemfuno zabathengi be-silicon-based gallium nitride epitaxial materials.