Ii-intshi ezi-2 zeSilicon Carbide Wafers 6H okanye 4H N-uhlobo okanye iSemi-Insulating SiC Substrates

Ii-intshi ezi-2 zeSilicon Carbide Wafers 6H okanye 4H N-uhlobo okanye Semi-Insulating SiC Substrates Featured Image

Inkcazelo emfutshane:

I-Silicon carbide (i-Tankeblue SiC wafers), eyaziwa ngokuba yi-carborundum, yi-semiconductor equlethe i-silicon kunye ne-carbon ene-chemical formula SiC. I-SiC isetyenziswa kwizixhobo ze-elektroniki ze-semiconductor ezisebenza kumaqondo obushushu aphezulu okanye amandla ombane aphezulu, okanye zombini.I-SiC ikwayenye yezinto ezibalulekileyo ze-LED, iyindawo esezantsi ethandwayo yokukhulisa izixhobo ze-GaN, kwaye ikwasebenza njengesasazi sobushushu kwindawo ephezulu- ii-LEDs zamandla.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimveliso ezicetyiswayo

4H SiC wafer N-uhlobo
Ububanzi: 2 intshi 50.8mm | 4 intshi 100mm | 6 intshi 150mm
Ukuqhelaniswa: suka kwi-asis 4.0˚ ukuya ku-<1120> ± 0.5˚
Ukuxhathisa: <0.1 ohm.cm
Uburhabaxa: I-Si-face CMP Ra <0.5nm, ipolishi ye-C-face ye-Optical Ra <1 nm

4H SiC wafer Semi-insulating
Ububanzi: 2 intshi 50.8mm | 4 intshi 100mm | 6 intshi 150mm
Uqhelaniso: kwi-axis {0001} ± 0.25˚
Ukuxhathisa: >1E5 ohm.cm
Uburhabaxa: I-Si-face CMP Ra <0.5nm, ipolishi ye-C-face ye-Optical Ra <1 nm

1. Isiseko se-5G -- unikezelo lwamandla onxibelelwano.
Unikezelo lwamandla onxibelelwano sisiseko samandla seseva kunye nesiseko sonxibelelwano lwesikhululo. Inika amandla ombane kwizixhobo ezahlukeneyo zokuhambisa ukuqinisekisa ukusebenza okuqhelekileyo kwenkqubo yonxibelelwano.

2. Ukutshaja imfumba yezithuthi zamandla amatsha -- imodyuli yamandla yemfumba yokutshaja.
Ukusebenza okuphezulu kunye namandla aphezulu emodyuli yamandla emfumba yokutshaja kunokuqondwa ngokusebenzisa i-silicon carbide kwimodyuli yamandla yemfumba yokutshaja, ukuze kuphuculwe isantya sokutshaja kunye nokunciphisa iindleko zokutshaja.

3. Iziko ledatha elikhulu, i-Intanethi ye-Industrial -- unikezelo lwamandla omncedisi.
Unikezelo lwamandla omncedisi lithala leencwadi lamandla omncedisi. Umncedisi unikeza amandla okuqinisekisa ukusebenza okuqhelekileyo kwenkqubo yomncedisi. Ukusetyenziswa kwezixhobo zamandla e-silicon carbide kunikezelo lwamandla kwiseva kunokuphucula uxinano lwamandla kunye nokusebenza kakuhle konikezelo lwamandla eseva, ukunciphisa umthamo weziko ledatha lilonke, ukunciphisa iindleko zokwakhiwa kweziko ledatha, kunye nokufezekisa okuphezulu kokusingqongileyo. ukusebenza kakuhle.

4. Uhv - Ukusetyenziswa kwee-flexible transmission ze-DC circuit breakers.

5. Umzila kaloliwe ohamba ngesantya esiphezulu kunye nomzila kaloliwe ohamba phakathi kwesixeko -- iziguquli zokuhamba, iziguquli zombane zombane, iziguquli ezincedisayo, izixhobo zombane ezincedisayo.

Ipharamitha

Iipropati	iyunithi	Isilicon	SiC	GaN
Bandgap ububanzi	eV	1.12	3.26	3.41
Indawo yokwahlulahlula	MV/cm	0.23	2.2	3.3
Ukuhamba kwe-electron	cm^2/Vs	1400	950	1500
Ixabiso le-Drift	10^7 cm/s	1	2.7	2.5
I-Thermal conductivity	W/cmK	1.5	3.8	1.3