Ii-intshi ezi-2 zeSilicon Carbide Wafers 6H okanye 4H N-uhlobo okanye iSemi-Insulating SiC Substrates

4H SiC wafer N-uhlobo
Ububanzi: 2 intshi 50.8mm | 4 intshi 100mm | 6 intshi 150mm
Ukuqhelaniswa: suka kwi-asis 4.0˚ ukuya ku-<1120> ± 0.5˚
Ukuxhathisa: <0.1 ohm.cm
Uburhabaxa: I-Si-face CMP Ra <0.5nm, ipolishi ye-C-face ye-Optical Ra <1 nm

4H SiC wafer Semi-insulating
Ububanzi: 2 intshi 50.8mm | 4 intshi 100mm | 6 intshi 150mm
Uqhelaniso: kwi-axis {0001} ± 0.25˚
Ukuxhathisa: >1E5 ohm.cm
Uburhabaxa: I-Si-face CMP Ra <0.5nm, ipolishi ye-C-face ye-Optical Ra <1 nm

1. Isiseko se-5G -- unikezelo lwamandla onxibelelwano.
Unikezelo lwamandla onxibelelwano sisiseko samandla seseva kunye nesiseko sonxibelelwano lwesikhululo. Inika amandla ombane kwizixhobo ezahlukeneyo zothumelo ukuqinisekisa ukusebenza okuqhelekileyo kwenkqubo yonxibelelwano.

2. Ukutshaja imfumba yezithuthi zamandla amatsha -- imodyuli yamandla yemfumba yokutshaja.
Ukusebenza okuphezulu kunye namandla aphezulu emodyuli yamandla emfumba yokutshaja kunokuqondwa ngokusebenzisa i-silicon carbide kwimodyuli yamandla yemfumba yokutshaja, ukuze kuphuculwe isantya sokutshaja kunye nokunciphisa iindleko zokutshaja.

3. Iziko ledatha elikhulu, i-Intanethi ye-Industrial -- unikezelo lwamandla omncedisi.
Unikezelo lwamandla omncedisi lilayibrari yamandla omncedisi. Umncedisi unikeza amandla okuqinisekisa ukusebenza okuqhelekileyo kwenkqubo yomncedisi. Ukusetyenziswa kwezixhobo zamandla e-silicon carbide kunikezelo lwamandla ombane kunokuphucula ukuxinana kwamandla kunye nokusebenza kakuhle konikezelo lwamandla omncedisi, ukunciphisa umthamo weziko ledatha lilonke, ukunciphisa iindleko zokwakhiwa kweziko ledatha, kunye nokufezekisa ukusebenza kakuhle kokusingqongileyo.

4. Uhv - Ukusetyenziswa kwee-flexible transmission ze-DC circuit breakers.

5. Umzila kaloliwe ohamba ngesantya esiphezulu kunye nomzila kaloliwe ohamba phakathi kwesixeko -- iziguquli zokuhamba, iziguquli zombane zombane, iziguquli ezincedisayo, izixhobo zombane ezincedisayo.