I-intshi ezi-2 ezingama-50.8mm zeSapphire Wafer C-Plane M-plane R-plane A-plane Ubukhulu 350um 430um 500um
Inkcazo yeendlela ezahlukeneyo zokujonga izinto
| Ukuqhelaniswa | I-C(0001)-Axis | I-R(1-102)-Axis | I-M(10-10) -I-Axis | I-A(11-20)-Axis | ||
| Ipropati ebonakalayo | I-C axis inokukhanya kwekristale, kwaye ezinye ii-axes zinokukhanya okungalunganga. IPlane C ithe tyaba, kungcono ukuba inqunyulwe. | I-R-plane inzima kancinci kune-A. | I-M plane inezikhonkwane ezinyathelweyo, akulula ukuyisika, kulula ukuyisika. | Ubunzima be-A-plane buphezulu kakhulu kunobo be-C-plane, obubonakala ngokuxhathisa ukuguguleka, ukumelana nokukrwela kunye nobunzima obuphezulu; Icala le-A-plane liyiplane egobileyo, elula ukuyisika; | ||
| Izicelo | Ii-substrates ze-sapphire ezisekwe kwi-C zisetyenziselwa ukukhulisa iifilimu ezifakwe kwi-III-V kunye ne-II-VI, ezifana ne-gallium nitride, ezinokuvelisa iimveliso ze-LED eziluhlaza okwesibhakabhaka, ii-laser diodes, kunye nezicelo ze-infrared detector. | Ukukhula kwe-substrate esekwe kwi-R ye-silicon extrasystals ezahlukeneyo ezigciniweyo, ezisetyenziswa kwiisekethe ezidibeneyo ze-microelectronics. | Isetyenziswa kakhulu ekukhuliseni iifilimu ze-epitaxial ze-GaN ezingezizo i-polar/semi-polar ukuphucula ukusebenza kakuhle kokukhanya. | I-A-oriented to the substrate ivelisa i-permittivity/medium efanayo, kwaye i-insulation ephezulu isetyenziswa kwi-hybrid microelectronics technology. Ii-superconductors zobushushu obuphezulu zinokuveliswa kwiikristale ezinde ze-A-base. | ||
| Umthamo wokucubungula | I-Pattern Sapphire Substrate (PSS): Ngendlela yokukhula okanye ukuQokelela, iipateni ze-microstructure eziqhelekileyo ze-nanoscale ziyilwe kwaye zenziwe kwi-substrate ye-sapphire ukulawula uhlobo lokukhanya kwe-LED, kunye nokunciphisa iziphene ezahlukeneyo phakathi kwe-GaN ekhula kwi-substrate ye-sapphire, ukuphucula umgangatho we-epitaxy, kunye nokuphucula ukusebenza kakuhle kwe-quantum ye-LED kunye nokwandisa ukusebenza kakuhle kokukhupha ukukhanya. Ukongeza, i-sapphire prism, isibuko, ilensi, umngxuma, ikhowuni kunye nezinye iindawo zesakhiwo zinokwenziwa ngokwezifiso ngokweemfuno zabathengi. | |||||
| Isibhengezo sepropati | Uxinano | Ukuqina | indawo yokunyibilika | Isalathisi sokubonisa ukukhanya (esibonakalayo nesingabonakaliyo) | Uthumelo (i-DSP) | I-Dielectric constant |
| 3.98g/cm3 | 9(iinyanga) | 2053℃ | 1.762~1.770 | ≥85% | 11.58@300K kwi-C axis(9.4 kwi-A axis） | |
Umzobo oneenkcukacha
