I-12 intshi ye-SIC substrate i-silicon carbide prime grade diameter 300mm enkulu ubukhulu 4H-N Ifanelekile ukusasaza ubushushu besixhobo esinamandla aphezulu

Inkcazo emfutshane:

I-substrate ye-silicon carbide eyi-12 intshi (i-substrate ye-SiC) yi-substrate enkulu, esebenza kakhulu ye-semiconductor material eyenziwe ngekristale enye ye-silicon carbide. I-Silicon carbide (i-SiC) yi-wide band gap semiconductor material eneempawu ezibalaseleyo zombane, ubushushu kunye noomatshini, esetyenziswa kakhulu ekwenzeni izixhobo ze-elektroniki kwiindawo ezinamandla aphezulu, amaza aphezulu kunye nobushushu obuphezulu. I-substrate eyi-12 intshi (300mm) yinkcazo yangoku yetekhnoloji ye-silicon carbide, enokuphucula kakhulu ukusebenza kakuhle kwemveliso kwaye inciphise iindleko.

Thumela i-imeyile kuthi

Iimbonakalo

Iimpawu zemveliso

1. Ubushushu obuphezulu: Ubushushu obuphezulu be-silicon carbide bungaphezulu ngokuphindwe kathathu kunobe-silicon, nto leyo efanelekileyo ekuchitheni ubushushu besixhobo esinamandla aphezulu.

2. Amandla entsimi yokuqhekeka okuphezulu: Amandla entsimi yokuqhekeka aphindwe kalishumi kune-silicon, afanelekileyo ukusetyenziswa koxinzelelo oluphezulu.

3. Isithuba esibanzi sebhendi: Isithuba sebhendi yi-3.26eV (4H-SiC), ifanelekile kwiindlela zokushisa eziphezulu kunye nokusetyenziswa rhoqo.

4. Ubunzima obuphezulu: Ubunzima beMohs buyi-9.2, bulandela idayimani kuphela, bumelana nokuguguleka okugqwesileyo kunye namandla oomatshini.

5. Uzinzo lweekhemikhali: ukumelana nokugqwala okunamandla, ukusebenza okuzinzileyo kumaqondo obushushu aphezulu nakwimeko enzima.

6. Ubukhulu obukhulu: i-substrate eyi-12 intshi (300mm), iphucula ukusebenza kakuhle kwemveliso, inciphise iindleko zeyunithi.

7. Uxinano oluphantsi lweziphene: iteknoloji yokukhula kwekristale enye ekumgangatho ophezulu ukuqinisekisa uxinano oluphantsi lweziphene kunye nokuhambelana okuphezulu.

Isikhokelo sesicelo esiphambili semveliso

1. Izixhobo zombane:

IiMosfets: Zisetyenziswa kwizithuthi zombane, kwiimoto zemizi-mveliso kunye nakwizixhobo zokuguqula amandla.

Iidiode: ezifana neediode zeSchottky (SBD), ezisetyenziselwa ukulungisa nokutshintsha izixhobo zamandla ngokufanelekileyo.

2. Izixhobo ze-Rf:

I-amplifier yamandla e-Rf: isetyenziswa kwizikhululo zonxibelelwano ze-5G kunye nonxibelelwano lwesathelayithi.

Izixhobo ze-microwave: Zifanelekile kwiinkqubo zonxibelelwano ze-radar kunye nee-wireless.

3. Iimoto ezintsha zamandla:

Iinkqubo zokuqhuba ngombane: abalawuli beemoto kunye nee-inverters zezithuthi zombane.

Inqwaba yokutshaja: Imodyuli yamandla yezixhobo zokutshaja ngokukhawuleza.

4. Izicelo zoshishino:

I-inverter ye-voltage ephezulu: yokulawula iimoto zoshishino kunye nolawulo lwamandla.

Igridi ekrelekrele: Yeetransfera ze-HVDC kunye neetransfera ze-elektroniki zamandla.

5. Inqwelo-moya:

Izixhobo ze-elektroniki ezinobushushu obuphezulu: zifanelekile kwiindawo ezinobushushu obuphezulu zezixhobo zeenqwelo-moya.

6. Intsimi yophando:

Uphando olubanzi lwe-bandgap semiconductor: lokuphuhlisa izixhobo kunye nezixhobo ezintsha ze-semiconductor.

I-substrate ye-silicon carbide eyi-intshi ezili-12 luhlobo lwe-substrate yezinto ze-semiconductor ezisebenzayo eziphezulu ezineempawu ezintle ezifana nokuqhuba okuphezulu kobushushu, amandla entsimi aqhekekileyo aphezulu kunye nomsantsa webhendi ebanzi. Isetyenziswa kakhulu kwi-electronics zamandla, izixhobo zerediyo, izithuthi zamandla amatsha, ulawulo lwemizi-mveliso kunye ne-aerospace, kwaye sisixhobo esibalulekileyo sokukhuthaza uphuhliso lwesizukulwana esilandelayo sezixhobo ze-elektroniki ezisebenzayo nezinamandla aphezulu.

Nangona ii-substrates ze-silicon carbide okwangoku zinokusetyenziswa okuncinci ngokuthe ngqo kwii-elektroniki zabathengi ezifana neeglasi ze-AR, amandla azo ekulawuleni amandla ngokufanelekileyo kunye nee-elektroniki ezincinci zinokuxhasa izisombululo zombane ezilula nezisebenza kakuhle kwizixhobo ze-AR/VR zexesha elizayo. Okwangoku, uphuhliso oluphambili lwe-substrate ye-silicon carbide lugxile kwiinkalo zoshishino ezifana nezithuthi zamandla amatsha, iziseko zonxibelelwano kunye nokuzisebenzela ngokuzenzekelayo kwezoshishino, kwaye lukhuthaza ishishini le-semiconductor ukuba liphuhlise kwicala elisebenzayo nelinokuthenjwa.

I-XKH izibophelele ekuboneleleni ngeziseko ze-SIC ezili-12 ezisemgangathweni ophezulu kunye nenkxaso yobugcisa kunye neenkonzo ezipheleleyo, kuquka:

1. Imveliso eyenzelwe wena: Ngokweemfuno zabathengi ukubonelela ngokumelana okwahlukileyo, ukujongwa kwekristale kunye nesiseko sonyango lomphezulu.

2. Ukuphucula inkqubo: Ukubonelela abathengi ngenkxaso yobuchwepheshe yokukhula kwe-epitaxial, ukwenziwa kwezixhobo kunye nezinye iinkqubo zokuphucula ukusebenza kwemveliso.

3. Uvavanyo kunye nesiqinisekiso: Nika ukufunyanwa kweziphene okungqongqo kunye nesiqinisekiso somgangatho ukuqinisekisa ukuba isiseko siyahlangabezana nemigangatho yoshishino.

4. Intsebenziswano yeR&D: Baphuhlise izixhobo ezintsha ze-silicon carbide kunye nabathengi ukukhuthaza ubuchule bobuchwephesha.

Itshathi yedatha

Inkcazelo ye-Substrate yeSilicon Carbide (SiC) eyi-1 2 intshi
Ibanga		Imveliso yeZeroMPD Ibanga (Ibanga le-Z)	Imveliso Esemgangathweni Ibanga (Ibanga le-P)		Ibanga elingeyonyani (Ibanga le-D)
Ububanzi		3 0 0 mm~305mm
Ubukhulu	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
Uqeqesho lweWafer		I-axis engasebenziyo: 4.0° ukuya kwi-<1120 >±0.5° kwi-4H-N, I-axis engasebenziyo: <0001>±0.5° kwi-4H-SI
Uxinano lweeMipayipi ezincinci	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ukuxhathisa	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Uqhelaniso oluPhambili oluSicaba		{10-10} ±5.0°
Ubude obuPhambili obuSicaba	4H-N	N / A
	4H-SI	I-Notch
Ukukhutshwa komda		3 mm
I-LTV/TTV/Isaphetha/I-Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Uburhabaxa		I-Polish Ra≤1 nm
		I-CMP Ra≤0.2 nm			I-Ra≤0.5 nm
Iimfanta zoMphetho ngokukhanya okuphezulu Iipleyiti zeHex Ngokukhanya Okuphezulu Kobungqingqwa Iindawo zePolytype Ngokukhanya Okuphezulu Izinto ezibandakanyiweyo zeCarbon ezibonakalayo Imikrwelo yomphezulu weSilicone Ngokukhanya Okuphezulu		Akukho nanye Indawo eqokelelweyo ≤0.05% Akukho nanye Indawo eqokelelweyo ≤0.05% Akukho nanye			Ubude obuqokelelweyo ≤ 20 mm, ubude obunye ≤2 mm Indawo eqokelelweyo ≤0.1% Indawo eqokelelweyo≤3% Indawo eqokelelweyo ≤3% Ubude obuqokelelweyo ≤1 × ububanzi besitya esisicaba
Iitships zomphetho ngokukhanya okuphezulu		Akukho kuvunyelweyo ububanzi nobunzulu obuyi-≥0.2mm			7 zivunyelwe, ≤1 mm nganye
(TSD) Ukususwa kwesikrufu sokutsala imisonto		≤500 cm-2		N / A
(BPD) Ukususwa kwesiseko sendiza		≤1000 cm-2		N / A
Ungcoliseko lweSilicon Surface Lubangelwa kukukhanya okuPhakamileyo		Akukho nanye
Ukupakisha		Ikhasethi yeewafer ezininzi okanye isitya sewafer esinye
Amanqaku:
1 Imida yeziphene isebenza kumphezulu we-wafer yonke ngaphandle kwendawo yokukhupha umphetho. 2 Imikrwelo mayijongwe ebusweni bukaSi kuphela. 3 Idatha yokwahlukana kwesakhiwo ivela kwiiwafers eziqoshiweyo ze-KOH kuphela.

I-XKH iza kuqhubeka nokutyala imali kuphando nophuhliso ukuze ikhuthaze impumelelo ye-substrates ze-silicon carbide eziyi-12-intshi ngobukhulu obukhulu, iziphene eziphantsi kunye nokuhambelana okuphezulu, ngelixa i-XKH ihlola usetyenziso lwayo kwiindawo ezintsha ezifana ne-electronics zabathengi (ezifana neemodyuli zamandla zezixhobo ze-AR/VR) kunye ne-quantum computing. Ngokunciphisa iindleko kunye nokwandisa amandla, i-XKH iya kuzisa impumelelo kushishino lwe-semiconductor.