I-12 intshi ye-SIC i-substrate ye-silicon carbide yodidi oluphambili ubukhulu be-300mm ubukhulu obukhulu 4H-N Ifanele ukuchithwa kobushushu kwisixhobo esinamandla aphezulu

I-12 intshi ye-SIC i-substrate ye-silicon carbide yodidi oluphambili ubukhulu be-300mm ubukhulu obukhulu 4H-N Ifanelekile isixhobo esinamandla sokulahla ubushushu obubonakalayo

Inkcazelo emfutshane:

I-12-intshi ye-silicon carbide substrate (i-SiC substrate) isayizi enkulu, i-high-performance semiconductor material substrate eyenziwe kwi-crystal eyodwa ye-silicon carbide. I-Silicon carbide (i-SiC) yi-wide band gap semiconductor imathiriyeli ebalaseleyo yombane, i-thermal kunye ne-mechanical properties, esetyenziswa ngokubanzi ekwenzeni izixhobo zombane kumandla aphezulu, i-frequency ephezulu kunye neendawo zokushisa eziphezulu. I-substrate ye-intshi eyi-12 (300mm) yinkcazo ehamba phambili yangoku yeteknoloji ye-silicon carbide, enokuphucula kakhulu ukusebenza kwemveliso kunye nokunciphisa iindleko.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimpawu zemveliso

1. I-conductivity ephezulu ye-thermal: i-thermal conductivity ye-silicon carbide ingaphezu kwamaxesha e-3 ye-silicon, efanelekileyo kwisixhobo esinamandla esiphezulu sokutshatyalaliswa kokushisa.

2. Amandla entsimi yokuphuka okuphezulu: Amandla entsimi yokuphuka ngamaxesha angama-10 e-silicon, afanelekile kwizicelo zoxinzelelo oluphezulu.

I-3.I-Bandgap ebanzi: I-bandgap yi-3.26eV (4H-SiC), ifanelekile kwiqondo lokushisa eliphezulu kunye nezicelo eziphezulu.

4. Ubunzima obuphezulu: Ubunzima be-Mohs yi-9.2, okwesibini kuphela kwidayimane, ukuxhathisa okugqwesileyo kokugqoka kunye namandla omatshini.

5. Ukuzinza kweekhemikhali: ukuxhathisa okuqinileyo kwe-corrosion, ukusebenza okuzinzileyo kwiqondo lokushisa eliphezulu kunye nokusingqongileyo okunzima.

6. Ubungakanani obukhulu: i-intshi eyi-12 (300mm) i-substrate, ukuphucula ukusebenza kakuhle kwemveliso, ukunciphisa iindleko zeyunithi.

I-7.I-defect defectity density: umgangatho ophezulu we-crystal eyodwa yokukhula iteknoloji yokuqinisekisa ubuninzi besiphako esiphantsi kunye nokuhambelana okuphezulu.

Ulwalathiso lwesicelo oluphambili lwemveliso

1. Ii-elektroniki zamandla:

I-Mosfets: Isetyenziswa kwizithuthi zombane, iimoto zemizi-mveliso kunye neziguquli zamandla.

IiDiodes: ezifana ne-Schottky diodes (SBD), esetyenziselwa ukulungiswa ngokufanelekileyo kunye nokutshintsha izixhobo zombane.

2. Izixhobo ze-RF:

I-amplifier yamandla e-Rf: isetyenziswe kwizikhululo zesiseko zonxibelelwano ze-5G kunye nonxibelelwano lwesathelayithi.

Izixhobo zeMicrowave: Ifanelekile kwi-radar kunye neenkqubo zonxibelelwano ezingenazintambo.

3. Izithuthi zamandla amatsha:

Iinkqubo zokuqhuba umbane: abalawuli beemoto kunye nee-inverters zezithuthi zombane.

Inqwaba yokutshaja: Imodyuli yamandla yezixhobo zokutshaja ngokukhawuleza.

4. Izicelo zamashishini:

I-inverter yamandla aphezulu: kulawulo lweemoto zamashishini kunye nolawulo lwamandla.

Igridi ye-Smart: Kusasazo lwe-HVDC kunye neziguquli zombane zombane.

5. I-Aerospace:

Ubushushu obuphezulu be-elektroniki: bulungele imekobume yobushushu obuphezulu bezixhobo ze-aerospace.

6. Indawo yophando:

Uphando olubanzi lwe-bandgap semiconductor: kuphuhliso lwezixhobo ezintsha ze-semiconductor kunye nezixhobo.

I-12-intshi ye-silicon carbide substrate luhlobo lwe-substrate ye-semiconductor ye-high-performance ye-semiconductor eneempawu ezintle ezifana ne-conductivity ephezulu ye-thermal, amandla aphezulu okuphuka kunye ne-wide band gap. Isetyenziswa kakhulu kumbane we-elektroniki, izixhobo zerediyo zamaza, izithuthi zamandla amatsha, ulawulo lwamashishini kunye ne-aerospace, kwaye iyimathiriyeli ephambili yokukhuthaza uphuhliso lwesizukulwana esilandelayo sezixhobo zombane ezisebenzayo neziphezulu.

Ngelixa i-silicon carbide substrates okwangoku inezicelo ezimbalwa ezithe ngqo kubathengi be-electronics ezifana neeglasi ze-AR, amandla abo kulawulo olusebenzayo lwamandla kunye ne-electronics miniaturized inokuxhasa ukukhaphukhaphu, izisombululo zonikezelo lwamandla aphezulu kwizixhobo ze-AR / VR zexesha elizayo. Okwangoku, uphuhliso oluphambili lwe-silicon carbide substrate lugxininiswe kwiinkalo zoshishino ezifana neenqwelo zamandla amatsha, iziseko zonxibelelwano kunye ne-automation ye-industrial, kwaye ikhuthaza imboni ye-semiconductor ukuba iphuhlise ngendlela efanelekileyo kunye nethembekileyo.

I-XKH izibophelele ekuboneleleni ngomgangatho ophezulu we-12 "ii-SIC substrates ezinenkxaso ebanzi yobugcisa kunye neenkonzo, kuquka:

1. Imveliso eyenziwe ngokwezifiso: Ngokweemfuno zabathengi ukubonelela nge-resistivity eyahlukileyo, i-crystal orientation kunye ne-substrate yonyango lomhlaba.

2. Ukulungiswa kwenkqubo: Ukubonelela abathengi ngenkxaso yobugcisa bokukhula kwe-epitaxial, ukuveliswa kwesixhobo kunye nezinye iinkqubo zokuphucula ukusebenza kwemveliso.

3. Uvavanyo kunye nesiqinisekiso: Ukubonelela ngokufunyaniswa kwesiphene esingqongqo kunye nesiqinisekiso somgangatho wokuqinisekisa ukuba i-substrate ihlangabezana nemigangatho yoshishino.

Intsebenziswano ye-4.R&d: Ngokudibeneyo phuhlisa izixhobo ezitsha ze-silicon carbide kunye nabathengi ukukhuthaza ukutsha kwetekhnoloji.

Itshathi yedatha

I-1 2 intshi yeSilicon Carbide (SiC) Inkcazo yeSubstrate
IBanga		Imveliso yeZeroMPD IBanga (Z Grade)	Imveliso esemgangathweni IBanga (P Grade)		IBanga leDummy (D Grade)
Ububanzi		3 0 0 mm~305mm
Ukutyeba	4H-N	750μm±15 μm	750μm±25 μm
	4H-SI	750μm±15 μm	750μm±25 μm
I-Wafer Orientation		I-off axis : 4.0 ° ukuya ku- <1120 > ±0.5 ° ye-4H-N, Kwi-axis : <0001>±0.5 ° ye-4H-SI
Ukuxinana kweMibhobho	4H-N	≤0.4cm-2	≤4cm-2		≤25cm-2
	4H-SI	≤5cm-2	≤10cm-2		≤25cm-2
Ukuxhathisa	4H-N	0.015~0.024 Ω·cm			0.015~0.028 Ω·cm
	4H-SI	≥1E10 Ω·cm			≥1E5 Ω·cm
Ukuqhelaniswa neFlethi okuPhambili		{10-10} ±5.0°
Ubude beFlethi obuPhambili	4H-N	N / A
	4H-SI	Inotshi
Ukungabandakanywa kuMda		3 mm
LTV/TTV/Saphetha/Warp		≤5μm/≤15μm/≤35 μm/≤55 μm			≤5μm/≤15μm/≤35 □ μm/≤55 □ μm
Uburhabaxa		IsiPolish Ra≤1 nm
		I-CMP Ra≤0.2 nm			Ra≤0.5 nm
I-Edge Cracks ngokuKhanya okuPhakamileyo Iipleyiti zeHex ngokuKhanya okuPhakamileyo Iindawo zePolytype NgokuKhanya okuPhakamileyo Ukubandakanywa kweCarbon ebonakalayo I-Silicon Surface Scratches ngokuKhanya okuPhakamileyo		Akukho nanye Indawo eyongezelekayo ≤0.05% Akukho nanye Indawo eyongezelekayo ≤0.05% Akukho nanye			Ubude obongezelekayo ≤ 20 mm, ubude obunye≤2 mm Indawo eyongezelekayo ≤0.1% Indawo eyongezelekayo≤3% Indawo eyongezelekayo ≤3% Ubude obongezelekayo≤1×i-wafer idayamitha
I-Edge Chips NgokuKhanya okuPhakamileyo		Akukho kuvunyelweyo ≥0.2mm ububanzi nobunzulu			I-7 ivunyelwe, ≤1 mm nganye
(TSD) Ukushenxiswa kwesikrufu somsonto		≤500 cm-2		N / A
(BPD) Isiseko sokuchithwa kwenqwelomoya		≤1000 cm-2		N / A
Ukungcoliswa komphezulu weSilicon ngokuKhanya okuPhakamileyo		Akukho nanye
Ukupakishwa		Multi-wafer Cassette Okanye Single Wafer Container
Amanqaku:
1 Imida yeziphene isebenza kuwo wonke umphezulu we-wafer ngaphandle kwendawo yokukhutshwa komphetho. 2Imikrwelo kufuneka ijongwe kuSi face kuphela. 3 Idatha yokususa isuka kwi-KOH etshisiweyo kuphela.

I-XKH iya kuqhubeka ityalomali kuphando kunye nophuhliso ukukhuthaza ukuphumelela kwe-12-intshi ye-silicon carbide substrates ngobukhulu obukhulu, iziphene eziphantsi kunye nokuhambelana okuphezulu, ngelixa i-XKH ihlola izicelo zayo kwiindawo ezikhulayo ezifana ne-electronics zabathengi (ezifana neemodyuli zamandla ze-AR / VR izixhobo) kunye ne-computing ye-quantum. Ngokunciphisa iindleko kunye nokwandisa umthamo, i-XKH iya kuzisa ukuchuma kwishishini le-semiconductor.