I-12 intshi ye-intshi ye-caltiker carbide ye-prime yenqanaba le-300mmm enkulu 4h-n ilungele ukubekwa kweSixhobo esiPhakamileyo

I-12 intshi ye-intshi ye-calticon carbide prime yenqanaba le-300mm enkulu 4h-n ilungele ukubekwa kweSixhobo esiPhezulu

Inkcazo emfutshane:

I-12-intshi ye-intshi ye-intshi ye-intshi (i-SIC ye-SIC) ibukhulu obukhulu, ukusebenza okuphezulu kwe-semicondcuctor okwenziwe kwi-crystal enye ye-silicon carbide. I-Silicon Carbide (i-SIC) ye-band band ye-semicondcuctor ye-semiconductor egqwesileyo, i-thermal kunye noomatshini, esetyenziswa ngokubanzi ekwenzeni izixhobo ze-elektroniki kumandla aphezulu, amaqondo aphezulu kunye neemeko zobushushu obuphezulu. I-12-intshi (i-300mm) i-subcation i-Advation i-Advanced Itekhnoloji ye-Silicon Carbide, enokuphucula kakhulu ukusebenza kunye nokunciphisa iindleko.

Thumela i-imeyile kuthi

Iinkcukacha zemveliso

Iimpawu zeMveliso

I-1. Ukuqhutywa kweMpumelelo kakhulu: Ukuqhubela phambili kwe-thermal ye-selicon carbide kungaphezulu kwamaxesha ama-3 e-silicon, elungele ukungavisisani kwendawo enobushushu.

2. Amandla aphezulu entsimi ephezulu: Amandla aqhekeza aqhekeza: Amandla entsimi eqhekezayo ngamaxesha ali-10 aseSilicon, kufanelekile ukuba kusetyenziswe uxinzelelo oluphezulu.

3. I-bandgap ye-Bandggap: I-bandgap yi-3.26EV (4h-SIC), ifanelekile kubushushu obuphezulu kunye nezicelo eziphezulu.

4. Ubunzima obukhulu: I-MOHS Hardy yi-9.2, yesibini kuphela kwidayimani, ukunxiba kakuhle kunye namandla omatshini.

I-5. Uzinzo lwekhemikhali: Ukunganyangeki kwekhemikhali eqinileyo, ukusebenza okuzinzileyo kubushushu obuphezulu kunye nemeko engqongqo.

I-6. Ubungakanani obukhulu: I-12 intshi (i-300mm) ye-subtate, ukuphucula ukusebenza kwemveliso, ukunciphisa iindleko zeyunithi.

7.Ukuba nobuso obunefuthe: itekhnoloji ephezulu yokukhula kwekristali yokuqinisekisa ukuxinana okusulelayo kunye nokungqinelana okuphezulu.

Imveliso yemveliso yemveliso

1. Amandla e-elektroniki:

I-Mosfetts: isetyenziselwa kwizithuthi zombane, iinqwelo moya ezisebenza kunye nabaguquli bemihlaba.

Ii-Deds: ezinjenge-Schottky Dods (SBD), esetyenziselwa ukulungiswa ngokufanelekileyo kunye nokutshintsha iimpahla zamandla.

2. Izixhobo zeRF:

I-RF Porm Amplifier: isetyenziswe kwizikhululo zonxibelelwano ezi-5G zonxibelelwano kunye nonxibelelwano lweSatellite.

Izixhobo ze-microwave: ilungele iinkqubo zonxibelelwano ezingenazingcingo.

3. Izithuthi zamandla amatsha:

Iinkqubo zombane zombane: Abalawuli bezithuthi kunye ne-inverters kwizithuthi zombane.

Ukutshaja: Imodyuli yamandla kwizixhobo zokubiza ngokukhawuleza.

I-4. Izicelo zemveliso:

I-Inverter ephezulu yevolimu: yolawulo lweemoto kunye nolawulo lwamandla.

Igridi ye-Smart: kugqithiselo lwe-HVDC kunye ne-Electronics ye-elektroniki.

5. I-Aerospace:

Iqondo lobushushu ephezulu: Ilungele indawo yobushushu ephezulu yezixhobo ze-aerospace.

6. Intsimi yophando:

I-bandggap i-bandgap semiconductor: Ukuphuhliswa kwezinto ezintsha ze-semicondctor kunye nezixhobo.

I-12 ye-intshi ye-intshi ye-intshi luhlobo lwezinto eziphezulu ze-semiconductor ze-semiconductor ezifana nepropathi ebalaseleyo efana nokuqhushumba okuphezulu, amandla aphezulu entsimi ephakamileyo kunye nebhendi ebanzi. Isetyenziswe ngokubanzi kumandla e-elektroniki, izixhobo zerediyo zerediyo, izithuthi zamandla amatsha, ulawulo lwemizi-mveliso kunye ne-aerospace, kwaye yinto ephambili yokukhuthaza ukuphuculwa kwesizukulwana esilandelayo se-elektroniki nezixhobo ze-elektroniki.

Ngelixa i-Silicon Carbide inabantu abambalwa kwi-elektroniki e-Affiting ye-AFSE, i-ANTAURRORDE yoLawulo lwaMandla oluSebenzayo kunye ne-MALITIONS inokuxhasa izisombululo ze-AR / v. Okwangoku, ophuhliso oluphambili lwe-Silicon Carbide lugxile kwimimandla yamashishini anjengezithuthi ezitsha zamandla, iziseko zonxibelelwano kunye ne-automation automation yemveliso yokuphuhlisa ngendlela efanelekileyo nenokuthenjwa.

XKH izibophelele ekuboneleleni ngokusemgangathweni ophezulu 12 "I-SIC Remocises ngenkxaso ebanzi yobugcisa kunye neenkonzo, kubandakanya:

1. Imveliso eyenziwe ngokwezifiso: Ngokutsho kwabathengi kufuneka babonelele ngokuchasene nokuthintelwa, i-crystal yekristale kunye nonyango lomphezulu.

2. Ukuphuculwa kwenkqubo: Nika abathengi ngenkxaso yezobuchwephesha bokukhula kwe-epitamatial, ukuvelisa isixhobo kunye nezinye iinkqubo zokuphucula ukusebenza kwemveliso.

3. Uvavanyo kunye nesiqinisekiso: Nikezela ngephenyane nexabiso elingqongqo kunye nesiqinisekiso esisesikweni ukuqinisekisa ukuba ibala lemigangatho.

4.R & D Intsebenziswano: Ukuphuhlisa ngokudibeneyo izixhobo ze-selicon ze-calbickon kunye nabathengi ukukhuthaza ubuchwephesha betekhnoloji.

Itshathi yedatha

I-1 2 intshi ye-intshi ye-carbide (i-SIC) ye-Fightarate
Ibanga		Imveliso ye-ze-zeromp IBAKALA (IBAKALA)	Imveliso esemgangathweni Ibanga (Ibanga)		IBakala laseDummy (Ibanga)
Ububanzi		I-3 0 0 0 mm ~ 130mmm
Ubukhulu	I-4h-n	750μ ± 15 μm	750μ ± 25 μm
	I-4h-si	750μ ± 15 μm	750μ ± 25 μm
Ukuqhelaniswa ne-Wagfer		I-Axis: 4.0 ° I-1120> ± 0.5 ° kwi-4h-n, kwi-Axis: <0001> i-4h-SI
Ukuxinana kwentsholongwane	I-4h-n	≤0.4cm-2	≤4cm-2		≤25cm-2
	I-4h-si	≤5cm-2	≤10cm-2		≤25cm-2
Ukuxhathisa	I-4h-n	0.015 ~ 0.024 ω c			0.015 ~ 0.028 ω ω i
	I-4h-si	≥1e10 ω · cm			≥1e5 ω · c
Isifundo esiyintloko		{10-10} ± ± 5.0 °
Ubude obuyintloko	I-4h-n	N / A
	I-4h-si	I-notch
Umphetho		I-3 mm
I-LTV / i-TTV / isaphetha / i-warp		≤يμm / ¶12 μm / ¶35 μm / ¶55 μm			≤يμm / ≤15 □ □ □ □ □ □5m / ≤55 □ μm
Rhabaxa		I-Polish Ra≤1 NM
		I-CMP Raş0.2 NM			Ra≤0.5 nm
Umda we-rocks ngokuKhanya okuphezulu kokukhanya Iipleyiti ze-hex ngamandla aphezulu Iindawo ze-polytype ngokukhanya okuphezulu kokukhanya I-carbon ebonakalayo I-Silicon Strect Stratches ngokuKhanya okuphezulu		Akukho Indawo ekhulayo ≤0.05% Akukho Indawo ekhulayo ≤0.05% Akukho			Ubude obukhawulezileyo ≤ 20 mm, ubude obungatshatanga Indawo ekhulayo ≤0.1% Indawo yeNqanaba3 Indawo ekhulayo ≤3% Ubude bobude obuxhaphakileyo
I-Edge chips ngamandla obukhulu bokukhanya		Akukho namnye ukuvunywa ≥0.2mm kwaye ubunzulu			7 ivunyelwe, ¶1 mm nganye
(I-TSD) i-screw ye-screw disw		≤500 cm-2		N / A
(I-BPD) I-Clousing Fise		≤1000 cm-2		N / A
Ukungcoliseka kwe-Silicon Tersulation ngokuKhangela okuphezulu kokukhanya		Akukho
Ukupakisha		Ikhasethi yekhasethi yesakhasi ezininzi okanye isitya esinye esiphezulu
Amanqaku:
Isiphene esinye semida sisebenza kuwo wonke umphandle wawufihliwe ngaphandle kwendawo yokukhuphela. 2Ukuba kufuneka kukhangelwa ubuso be-si. I-3 idatha yokufundisa ivela kuphela kwi-koh ekhutshiweyo.

I-XKH iya kuqhubeka nokutyala imali kuphando kunye nophuhliso ukukhuthaza i-intshi ye-intshi yesilika, iziphene eziphantsi kunye nokungqinelana kweemodyuli zomthengi (ezinje ngeemo zekhompyutha. Ngokunciphisa iindleko kunye nokwanda komthamo, i-xkh iya kuzisa ubuchule kumzi mveliso we-semicondcuctor.