100mm 4inch GaN kwiSapphire Epi-layer wafer Gallium nitride epitaxial wafer

Inkcazelo emfutshane:

I-Gallium nitride epitaxial sheet ngummeli oqhelekileyo wesizukulwana sesithathu se-wide band gap semiconductor semiconductor epitaxial materials, eneempawu ezibalaseleyo ezifana ne-gap band ebanzi, amandla entsimi ephukileyo, umgangatho ophezulu we-thermal conductivity, isantya esiphezulu se-electron saturation drift, ukuxhathisa okunamandla kwi-radiation kunye nokuphakama okuphezulu. ukuzinza kweekhemikhali.

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Inkqubo yokukhula kwe-GaN blue LED quantum well structure. Ukuhamba kwenkqubo eneenkcukacha ngolu hlobo lulandelayo

(1) Ukubhaka okuphezulu kweqondo lokushisa, i-sapphire substrate ifudunyezwa kuqala kwi-1050 ℃ kwi-atmosphere ye-hydrogen, injongo kukucoca umphezulu we-substrate;

(2) Xa iqondo lobushushu le-substrate lehla ukuya kuma-510℃, iqondo lobushushu eliphantsi le-GaN/AlN buffer layer nobukhulu be-30nm lifakwa kumphezulu wesapphire substrate;

(3) Ukunyuka kweqondo lokushisa ukuya kwi-10 ℃, i-reaction gas ammonia, i-trimethylgallium kunye ne-silane ifakwe, ngokulandelanayo ilawula izinga lokuhamba okuhambelanayo, kunye ne-silicon-doped N-type GaN ye-4um ubukhulu ikhulile;

(4) Igesi yokusabela ye-trimethyl aluminium kunye ne-trimethyl gallium yayisetyenziselwa ukulungiselela i-silicon-doped N-type A-continents enobunzima be-0.15um;

(5) I-50nm i-Zn-doped InGaN yalungiswa ngokujova i-trimethylgallium, i-trimethylindium, i-diethylzinc kunye ne-ammonia kwiqondo lokushisa le-8O0℃ kunye nokulawula amazinga okuhamba okuhlukeneyo ngokulandelanayo;

(6) Iqondo lokushisa liye landa kwi-1020 ℃, i-trimethylaluminum, i-trimethylgallium kunye ne-bis (i-cyclopentadienyl) i-magnesium ijojowe ukulungiselela i-0.15um Mg doped P-type AlGaN kunye ne-0.5um Mg doped P-type G glucose yegazi;

(7) Umboniso bhanyabhanya okumgangatho ophezulu we-P weGaN Sibuyan wafunyanwa ngokufunxa kumoya wenitrogen kuma-700℃;

(8) Ukufakela kumphezulu we-P-uhlobo lwe-G ukuveza umgangatho we-N-uhlobo lwe-G;

(9) I-Evaporation ye-Ni / Au i-contact plates kwindawo ye-p-GaNI, i-evaporation ye-△/Al i-contact plates kwi-ll-GaN surface ukwenza i-electrodes.

Iinkcukacha

Into	I-GaN-TCU-C100	I-GaN-TCN-C100
Imilinganiselo	e 100 mm ± 0.1 mm
Ukutyeba	4.5±0.5 um Inokwenziwa ngokwezifiso
Ukuqhelaniswa	I-C-plane (0001) ± 0.5 °
Uhlobo lokuqhuba	N-udidi (Akutshintshwanga)	N-udidi (Si-doped)
Ukuxhathisa(300K)	<0.5 Q · cm	< 0.05 Q · cm
Ugxininiso lweCarrier	< 5x10¹⁷i-cm^-3	> 1x10¹⁸i-cm^-3
Ukushukuma	~ 300 cm²/Vs	~ 200 cm²/Vs
Uxinaniso lokuTyeka	Ngaphantsi kwe-5x10⁸i-cm^-2(ibalwe yi-FWHMs ye-XRD)
Ulwakhiwo lwe-substrate	I-GaN kwiSapphire(uMgangatho: UKhetho lwe-SSP: DSP)
Indawo eSebenzayo yoMphezulu	> 90%
Iphakheji	Ipakishwe kwiklasi ye-100 yendawo ecocekileyo yegumbi, kwiikhasethi ze-25pcs okanye izikhongozeli ze-wafer enye, phantsi kwe-nitrogen emoyeni.