I-substrate
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Inkqubo yeTVG kwi-quartz yesafire ye-BF33 wafer Iglasi ye-wafer yokubhoboza
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I-Single Crystal Silicon Wafer Si Substrate Type N/P I-Outpult Silicon Carbide Wafer
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Iisubstrates zeSiC Composite ze-N-Type Dia6inch I-monocrystalline esemgangathweni ophezulu kunye ne-substrate ekumgangatho ophantsi
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I-SiC engaphantsi kwe-Si Composite Substrates
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IiSubstrates zeSiC Composite eziNcincisa ubushushu obuphantsi, iDia2inch 4inch 6inch 8inch HPSI
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I-Sapphire boule yeSynthetic Monocrystal Sapphire Ububanzi obungenanto kunye nobukhulu bungenziwa ngokwezifiso
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I-N-Type SiC kwi-Si Composite Substrates Dia6inch
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I-SiC substrate Dia200mm 4H-N kunye ne-HPSI Silicon carbide
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I-substrate ye-SiC ye-3 intshi Imveliso ye-Dia76.2mm 4H-N
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I-SiC substrate P kunye ne-D grade Dia50mm 4H-N 2inch
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Ii-substrates zeGlasi zeTGV 12inch wafer Ukubhoboza ngeglasi
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Uhlobo lweSiC Ingot 4H-N Dummy grade 2inch 3inch 4inch 6inch ubukhulu: ＞10mm