Inxalenye engaphantsi
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
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isafire ingot 3inch 4inch 6inch Monocrystal CZ KY indlela enokwenziwa ngokwezifiso
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I-2 intshi ye-Sic silicon carbide substrate 6H-N Uhlobo lwe-0.33mm 0.43mm i-polish enamacala amabini Ukuqhuba okuphezulu kwe-thermal Ukusetyenziswa kwamandla aphantsi
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I-GaAs yamandla aphezulu e-epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yonyango lwelaser
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I-GaAs laser epitaxial wafer 4 intshi 6 intshi yeVCSEL ethe nkqo emngxunyeni womphezulu welaser wavelength 940nm indawo enye
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2inch 3inch 4inch InP epitaxial wafer substrate APD isitofu sokukhanya sonxibelelwano lwefiber optic okanye iLiDAR
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Iringi yesafire eyenziwe ngezinto ezenziwe ngesafire Ubunzima obungafihliyo kunye nokwenza ngokwezifiso iMohs ye9
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ISapphire Prism Sapphire Lens High transparency Al2O3 BK7 JGS1 JGS2 Material Optical Instrument
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Iringi yesafire yonke-isafire eyenziwe ngokupheleleyo ukusuka kwisafire Ukungafihli nto ilebhu eyenziwe ngezinto zesafire
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ISapphire ingot dia 4inch×80mm Monocrystalline Al2O3 99.999% iCrystal enye
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SiC substrate 3inch 350um ubukhulu HPSI uhlobo Prime Grade Dummy ibakala
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ISilicon Carbide SiC Ingot 6inch N uhlobo lweDummy/ubukhulu bebakala lokuqala lunokuba ngokwezifiso