Inxalenye engaphantsi
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Ibhola yesafire yelensi ibakala lokukhanya Al2O3 imathiriyeli Uluhlu loThutho 0.15-5.5um Dia 1mm 1.5mm
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Ibhola yesafire Dia 1.0 1.1 1.5 yelensi yebhola ebonayo ubunzima obuphezulu bekristale enye
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isafire dia enemibala yesafire yewotshi, customizable dia 40 38mm ubukhulu 350um 550um, high transparent
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I-InSb wafer 2inch 3inch engagotywanga uhlobo lwe-P lokuqhelaniswa ne-111 100 ye-Infrared Detectors
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I-Indium Antimonide (InSb) ii-wafers ze-Indium Antimonide (InSb) uhlobo lwe-N uhlobo lwe-P i-Epi elungele ukuvuthululwa i-Te doped okanye i-Ge doped 2inch 3inch 4inch ubukhulu bobukhulu be-Indium Antimonide (InSb) iiwafers
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SiC wafer 4H-N 6H-N HPSI 4H-semi 6H-semi 4H-P 6H-P 3C uhlobo 2inch 3inch 4inch 6inch 8inch
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isafire ingot 3inch 4inch 6inch Monocrystal CZ KY indlela enokwenziwa ngokwezifiso
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I-2 intshi ye-Sic silicon carbide substrate 6H-N Uhlobo lwe-0.33mm 0.43mm i-polish enamacala amabini Ukuqhuba okuphezulu kwe-thermal Ukusetyenziswa kwamandla aphantsi
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I-GaAs yamandla aphezulu e-epitaxial wafer substrate gallium arsenide wafer power laser wavelength 905nm yonyango lwelaser
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I-GaAs laser epitaxial wafer 4 intshi 6 intshi yeVCSEL ethe nkqo emngxunyeni womphezulu welaser wavelength 940nm indawo enye
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2inch 3inch 4inch InP epitaxial wafer substrate APD isitofu sokukhanya sonxibelelwano lwefiber optic okanye iLiDAR
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Iringi yesafire eyenziwe ngezinto ezenziwe ngesafire Ubunzima obungafihliyo kunye nokwenza ngokwezifiso iMohs ye9