I-substrate
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I-AlN kwi-FSS 2inch 4inch NPSS/FSS Itemplate ye-AlN yendawo ye-semiconductor
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I-Gallium Nitride (GaN) Epitaxial ekhuliswe kwiiWafers zeSapphire eziyi-4 intshi eziyi-6 intshi ze-MEMS
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Iilensi ze-Precision Monocrystalline Silicon (Si) – Ubungakanani kunye neeCoatings ezenziwe ngokwezifiso ze-Optoelectronics kunye ne-Infrared Imaging
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Iilensi ze-High-Purity Single Crystal Silicon (Si) ezenziwe ngokwezifiso – Ubungakanani kunye neeCoatings ezilungiselelwe ukusetyenziswa kwe-Infrared kunye ne-THZ (1.2-7µm, 8-12µm)
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Ifestile ye-Optical yeSapphire Step-Type eyenzelwe wena, i-Al2O3 Single Crystal, i-High Purity, i-Diameter 45mm, i-10mm yobukhulu, i-Laser Cut kwaye i-Polished
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Ifestile yeSapphire eSebenza kakuhle kakhulu, iCrystal enye ye-Al2O3, enombala ocacileyo, iiMilo kunye nobukhulu obulungiselelwe wena kwiisicelo ze-Precision Optical
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Iphini yokuphakamisa iSapphire eSebenza ngokuPhezulu, iCrystal enye ye-Al2O3 ecocekileyo yeeNkqubo zoThumelo lweWafer - Ubungakanani obuQhelekileyo, ukuqina okuphezulu kwizicelo ezichanekileyo
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Intonga yokuphakamisa iSapphire yeShishini kunye nePin, iPin yeSapphire ye-Al2O3 yoBulukhuni obuphezulu bokuphatha iWafer, inkqubo yeRadar kunye nokucubungula iSemiconductor - Ububanzi ukusuka kwi-1.6mm ukuya kwi-2mm
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Iphini yokuphakamisa iSapphire eyenzelwe wena, iinxalenye ze-Al2O3 ze-Optical eziQinisekileyo zoGuqulelo lweWafer – Ububanzi obuyi-1.6mm, 1.8mm, bunokulungiselelwa usetyenziso lwemizi-mveliso
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Ilensi yebhola yesafire yebakala le-optical Al2O3 izinto Uluhlu lokudluliselwa 0.15-5.5um Ububanzi 1mm 1.5mm
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ibhola yesafire Dia 1.0 1.1 1.5 yelensi yebhola ye-optical ubunzima obuphezulu bekristale enye
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I-dia yesafire enemibala yesafire yewotshi, i-dia enokwenziwa ngokwezifiso eyi-40 38mm ubukhulu obuyi-350um 550um, ebonakala ngokucacileyo phezulu