IiWafers zeSilicon Carbide eziyi-2 intshi eziyi-6H okanye eziyi-4H N okanye iiSubstrates zeSiC eziNciphisa ubushushu obuphantsi
Iimveliso ezicetyiswayo
Uhlobo lwe-N lwe-wafer ye-SiC ye-4H
Ububanzi: 2 intshi 50.8mm | 4 intshi 100mm | 6 intshi 150mm
Ulwalathiso: i-axis engaphandle kwe-4.0˚ ukuya kwi-<1120> ± 0.5˚
Ukumelana: < 0.1 ohm.cm
Uburhabaxa: I-Si-face CMP Ra <0.5nm, i-C-face optical polish Ra <1 nm
I-wafer ye-SiC ye-4H engavaliyo
Ububanzi: 2 intshi 50.8mm | 4 intshi 100mm | 6 intshi 150mm
Ulwalathiso: kwi-axis {0001} ± 0.25˚
Ukumelana: >1E5 ohm.cm
Uburhabaxa: I-Si-face CMP Ra <0.5nm, i-C-face optical polish Ra <1 nm
1. Iziseko zophuhliso ze-5G -- umbane wonxibelelwano
Umbane wonxibelelwano sisiseko samandla onxibelelwano lweseva kunye nesikhululo seenqwelo-moya. Ibonelela ngamandla ombane kwizixhobo ezahlukeneyo zothumelo ukuqinisekisa ukusebenza okuqhelekileyo kwenkqubo yonxibelelwano.
2. Inqwaba yokutshaja yezithuthi ezintsha zamandla -- imodyuli yamandla yenqwaba yokutshaja
Ukusebenza kakuhle kunye namandla aphezulu emodyuli yamandla enqwaba yokutshaja kunokufezekiswa ngokusebenzisa i-silicon carbide kwimodyuli yamandla enqwaba yokutshaja, ukuze kuphuculwe isantya sokutshaja kunye nokunciphisa iindleko zokutshaja.
3. Iziko ledatha elikhulu, i-Intanethi yezeMveliso -- umbane weseva
Umbane weseva lithala leencwadi lamandla eseva. Iseva inika amandla ukuqinisekisa ukusebenza okuqhelekileyo kwenkqubo yeseva. Ukusetyenziswa kwezixhobo zamandla ze-silicon carbide kumbane weseva kunokuphucula uxinano lwamandla kunye nokusebenza kakuhle kombane weseva, kunciphise umthamo weziko ledatha lilonke, kunciphise iindleko zokwakha iziko ledatha lilonke, kwaye kufezekise ukusebenza kakuhle kokusingqongileyo.
4. Uhv - Ukusetyenziswa kwee-flexible transmission DC circuit breakers
5. Iimoto zoololiwe ezihamba ngesantya esiphezulu kunye nezothutho phakathi kwezixeko -- ii-traction converters, ii-power electronic transformers, ii-assistant converters, izixhobo zombane ezincedisayo
Inkcazo
Umzobo oneenkcukacha




