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Umgca we-Silicon / Silicon Carbide (SiC) we-Wafer oQhagamshelweyo we-Four-Stage Linked Polishing Automation (Umgca wokuphatha odibeneyo emva kwe-Polish)

Umgca weSilicon / Silicon Carbide (SiC) weWafer oQhagamshelweyo weZigaba ezine (Umgca wokuphatha oDibeneyo emva kwePolish) Umfanekiso obonisiweyo
  • Umgca we-Silicon / Silicon Carbide (SiC) we-Wafer oQhagamshelweyo we-Four-Stage Linked Polishing Automation (Umgca wokuphatha odibeneyo emva kwe-Polish)
  • Umgca we-Silicon / Silicon Carbide (SiC) we-Wafer oQhagamshelweyo we-Four-Stage Linked Polishing Automation (Umgca wokuphatha odibeneyo emva kwe-Polish)
  • Umgca we-Silicon / Silicon Carbide (SiC) we-Wafer oQhagamshelweyo we-Four-Stage Linked Polishing Automation (Umgca wokuphatha odibeneyo emva kwe-Polish)
  • Umgca we-Silicon / Silicon Carbide (SiC) we-Wafer oQhagamshelweyo we-Four-Stage Linked Polishing Automation (Umgca wokuphatha odibeneyo emva kwe-Polish)
  • Umgca we-Silicon / Silicon Carbide (SiC) we-Wafer oQhagamshelweyo we-Four-Stage Linked Polishing Automation (Umgca wokuphatha odibeneyo emva kwe-Polish)
  • Umgca we-Silicon / Silicon Carbide (SiC) we-Wafer oQhagamshelweyo we-Four-Stage Linked Polishing Automation (Umgca wokuphatha odibeneyo emva kwe-Polish)

Inkcazo emfutshane:

Lo Mgca Wokupolisha Oqhagamshelweyo Weziteji Ezine sisisombululo esidibeneyo nesikwi-intanethi esenzelweemva kokupolisha / emva kwe-CMPimisebenzi yei-siliconkwayei-silicon carbide (i-SiC)iiwafers. Zakhiwe ngeenxa zonkeizithwali zeseramikhi (iipleyiti zeseramikhi), le nkqubo idibanisa imisebenzi emininzi esezantsi ibe ngumgca omnye odibeneyo—inceda ii-fabs ukunciphisa ukuphathwa ngesandla, ukuzinzisa ixesha lokuthathwa, kunye nokuqinisa ulawulo longcoliseko.

 


Iimbonakalo

Umzobo oneenkcukacha

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Umgca we-Silicon / Silicon Carbide (SiC) we-Wafer oQhagamshelweyo we-Four-Stage Linked Polishing Automation (Umgca wokuphatha odibeneyo emva kwe-Polish)4

Isishwankathelo

Lo Mgca Wokupolisha Oqhagamshelweyo Weziteji Ezine sisisombululo esidibeneyo nesikwi-intanethi esenzelweemva kokupolisha / emva kwe-CMPimisebenzi yei-siliconkwayei-silicon carbide (i-SiC)iiwafers. Zakhiwe ngeenxa zonkeizithwali zeseramikhi (iipleyiti zeseramikhi), le nkqubo idibanisa imisebenzi emininzi esezantsi ibe ngumgca omnye odibeneyo—inceda ii-fabs ukunciphisa ukuphathwa ngesandla, ukuzinzisa ixesha lokuthathwa, kunye nokuqinisa ulawulo longcoliseko.

 

Kwimveliso ye-semiconductor,ukucoca okusebenzayo emva kwe-CMPiyaziwa ngokubanzi njengenyathelo eliphambili lokunciphisa iziphene ngaphambi kwenkqubo elandelayo, kunye neendlela eziphambili (kuqukaukucoca okukhulu) zihlala zixoxwa ngokuphucula ukusebenza kokususwa kwamasuntswana.

 

Ngokukodwa kwiSiC,ubunzima obuphezulu kunye nokungasebenzi kakuhle kweekhemikhaliyenza ukupolisha kube nzima (kudla ngokunxulunyaniswa nesantya esiphantsi sokususa izinto kunye nomngcipheko ophezulu wokonakala komphezulu/umhlaba), nto leyo eyenza ukuba ukuzilawula okuzinzileyo emva kokupolisha kunye nokucoca/ukuphatha okulawulwayo kube luncedo kakhulu.

Iingenelo eziphambili

Umgca omnye odibeneyo oxhasa:

  • Ukwahlulwa kunye nokuqokelelwa kwewafer(emva kokupholisha)

  • Ukugcinwa kwe-ceramic carrier buffer / i-storage

  • Ukucoca umthwali we-ceramic

  • Ukufakela i-wafer (ukuncamathisela) kwiinqwelo ze-ceramic

  • Ukusebenza okudibeneyo, komgca omnyeIiwafers eziziisentimitha ezi-6–8

Iinkcukacha zoBugcisa (Kwiphepha leDatha eliNikiweyo)

  • Ubukhulu beZixhobo (L×W×H):13643 × 5030 × 2300 mm

  • Ukunikezwa Amandla:I-AC 380 V, 50 Hz

  • Amandla ewonke:119 kW

  • Ukucoca Ukunyuka:0.5 μm < 50 nganye; 5 μm < 1 nganye

  • Ukunyuka kweFlatness:≤ 2 μm

Isalathiso sokuPhuma (Kwiphepha leDatha eliNikiweyo)

  • Ubukhulu beZixhobo (L×W×H):13643 × 5030 × 2300 mm

  • Ukunikezwa Amandla:I-AC 380 V, 50 Hz

  • Amandla ewonke:119 kW

  • Ukucoca Ukunyuka:0.5 μm < 50 nganye; 5 μm < 1 nganye

  • Ukunyuka kweFlatness:≤ 2 μm

Ukuhamba komgca okuqhelekileyo

  1. I-Infeed / i-interface evela kwindawo yokupolisha ephezulu

  2. Ukwahlulwa kunye nokuqokelelwa kwewafer

  3. Ukugcinwa/ukugcinwa kwesithwali se-ceramic (ukudibanisa ngexesha lokuthathwa kwezixhobo)

  4. Ukucoca umthwali we-ceramic

  5. I-wafer efakelwe kwiinqwelo zokuthwala (ngococeko kunye nolawulo lokusithamba)

  6. Idluliselwa kwinkqubo esezantsi okanye kwi-logistics

FAQ

Q1: Zeziphi iingxaki ezisombululwa ngulo mgca ngokuyintloko?
A: Iyenza lula imisebenzi emva kokupholisha ngokudibanisa ukwahlulwa/ukuqokelela iiwafer, ukugabha iiceramic carrier, ukucoca iicarrier, kunye nokufakelwa iiwafer kumgca omnye odibeneyo we-automation—ukunciphisa iindawo zokuthinta ngesandla kunye nokuzinzisa isigqi semveliso.

 

Umbuzo 2: Zeziphi izinto ze-wafer kunye nobukhulu obuxhaswayo?
A:I-Silicon kunye ne-SiC,6–8 intshiiiwafers (ngokweemfuno ezibonelelweyo).

 

Umbuzo 3: Kutheni ukucoca emva kwe-CMP kugxininiswa kweli shishini?
A: Uncwadi lweshishini lubonisa ukuba imfuno yokucoca ngempumelelo emva kwe-CMP ikhule yaze yanciphisa uxinano lweziphene ngaphambi kwenyathelo elilandelayo; iindlela ezisekelwe kwi-megasonic zihlala zifundwa ukuphucula ukususwa kweesuntswana.

Ngathi

I-XKH igxile kuphuhliso lobuchwepheshe obuphezulu, imveliso, kunye nokuthengiswa kweglasi ekhethekileyo ye-optical kunye nezixhobo ezintsha zekristale. Iimveliso zethu zibonelela nge-optical electronics, i-consumer electronics, kunye ne-military. Sinikezela nge-Sapphire optical components, ii-mobile phone lens covers, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kunye ne-semiconductor crystal wafers. Ngobuchule obunobuchule kunye nezixhobo eziphambili, sigqwesile ekucutshungulweni kwemveliso okungaqhelekanga, sijolise ekubeni yishishini eliphambili le-optoelectronic materials high-tech.

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  • Ngaphambili:
  • Okulandelayo:

    • Iimveliso eziNxulumeneyo

    Bhala umyalezo wakho apha uze uwuthumele kuthi
    Cofa u-enter ukuze uphendle okanye ucofe u-ESC ukuze uvale