Inqanawa yeSilicon Carbide (SiC) Wafer

Umfanekiso obonisiweyo weSikepe seSilicon Carbide (SiC) Wafer

Inkcazo emfutshane:

Inqanawa ye-wafer yeSilicon Carbide (SiC) sisithwali senkqubo ye-semiconductor esenziwe ngezinto ze-SiC ezicocekileyo kakhulu, ezenzelwe ukubamba nokuthutha ii-wafer ngexesha leenkqubo ezibalulekileyo zobushushu obuphezulu ezifana ne-epitaxy, i-oxidation, i-diffusion, kunye ne-annealing.

Thumela i-imeyile kuthi

Iimbonakalo

Umzobo oneenkcukacha

Isishwankathelo seGlasi yeQuartz

Ngenxa yophuhliso olukhawulezayo lwee-semiconductors zamandla kunye nezixhobo ze-bandgap ebanzi, izikebhe ze-quartz eziqhelekileyo zijongene nemida efana nokuguquguquka kumaqondo obushushu aphezulu, ungcoliseko olukhulu lwamasuntswana, kunye nobomi obufutshane benkonzo. Izikebhe ze-SiC wafer, ezizinze kakhulu kubushushu, ungcoliseko oluphantsi, kunye nobomi obude, ziya zithatha indawo yezikebhe ze-quartz kwaye ziba lukhetho olukhethwayo ekwenzeni izixhobo zeSiC.

Ezona mpawu

1. Iingenelo zezinto eziphathekayo

Yenziwe nge-SiC ecocekileyo kakhulu eneubunzima obuphezulu kunye namandla.
Iqondo lokunyibilika elingaphezulu kwama-2700°C, liphezulu kakhulu kune-quartz, nto leyo eqinisekisa uzinzo lwexesha elide kwiindawo ezixineneyo.

2. Iipropati zobushushu

Ukuhanjiswa kobushushu okuphezulu ukuze kudluliswe ubushushu ngokukhawuleza nangokulinganayo, kunciphisa uxinzelelo lwe-wafer.
I-Coefficient of thermal expansion (CTE) ihambelana ngokusondeleyo ne-SiC substrates, nto leyo enciphisa ukugoba kwe-wafer kunye nokuqhekeka.

3. Uzinzo lweeKhemikhali

Izinzile phantsi kobushushu obuphezulu kunye neemeko ezahlukeneyo (H₂, N₂, Ar, NH₃, njl.njl.).
Ukumelana kakuhle kwe-oxidation, okuthintela ukubola kunye nokuveliswa kwamasuntswana.

4. Ukusebenza kwenkqubo

Umphezulu ogudileyo noxineneyo unciphisa ukuchitheka kwamasuntswana kunye nongcoliseko.
Igcina uzinzo kunye nomthamo womthwalo emva kokusetyenziswa ixesha elide.

5. Ukonga iindleko

Ubomi benkonzo obude ngokuphindwe kathathu ukuya kahlanu kuneenqanawa ze-quartz.
Ukugcinwa rhoqo okuphantsi, kunciphisa ixesha lokungasebenzi kunye neendleko zokutshintsha.

Izicelo

I-SiC Epitaxy: Ukuxhasa ii-substrates ze-SiC eziyi-4-intshi, eziyi-6-intshi, kunye neziyi-8-intshi ngexesha lokukhula kwe-epitaxial yobushushu obuphezulu.
Ukwenziwa kwesixhobo samandla: Ilungele iiSiC MOSFET, iiSchottky Barrier Diodes (iiSBD), ii-IGBT, kunye nezinye izixhobo.
Unyango lweThermal: Iinkqubo zokufunxa, ukunitha, kunye nokufaka icarbonization.
Ukuxinana kunye nokuSasazwa: Iqonga lokuxhasa i-wafer ezinzileyo yokukhupha i-oxidation nokusasazwa kobushushu obuphezulu.

Iinkcukacha zobugcisa

Into	Inkcazo
Izinto eziphathekayo	I-Silicon Carbide ecocekileyo kakhulu (i-SiC)
Ubungakanani beWafer	Ii-intshi ezi-4 / ii-intshi ezi-6 / ii-intshi ezi-8 (zingenziwa ngokwezifiso)
Ubushushu obuphezulu bokusebenza.	≤ 1800°C
Ukwandiswa kobushushu be-CTE	4.2 × 10⁻⁶ /K (kufutshane ne-substrate ye-SiC)
Ukuqhuba kweThermal	120–200 W/m·K
Uburhabaxa bomphezulu	I-Ra < 0.2 μm
Ukufana	± 0.1 mm
Ubomi beNkonzo	≥ 3× ubude kuneenqanawa ze-quartz

Ukuthelekisa: I-Quartz Boat vs. I-SiC Boat

Ubukhulu	Inqanawa yeQuartz	Isikhephe seSiC
Ukumelana nobushushu	≤ 1200°C, ukuguquka kobushushu obuphezulu.	≤ 1800°C, izinzile ngokweqondo lobushushu
Umdlalo we-CTE kunye ne-SiC	Ukungalingani okukhulu, umngcipheko woxinzelelo lwe-wafer	Ukulingana okusondeleyo, kunciphisa ukuqhekeka kwe-wafer
Ungcoliseko lwamasuntswana	Iphezulu, ivelisa ukungcola	Umphezulu ophantsi, ogudileyo noxineneyo
Ubomi beNkonzo	Ukutshintshwa okufutshane, rhoqo	Ixesha elide, ixesha elide eliyi-3–5×
Inkqubo Efanelekileyo	I-Si epitaxy eqhelekileyo	Yenzelwe izixhobo zeSiC epitaxy kunye namandla

Imibuzo Ebuzwa Rhoqo – Iinqanawa zeSilicon Carbide (SiC) Wafer

1. Yintoni isikhephe se-SiC wafer?

Inqanawa ye-SiC wafer yinkampani yokuthutha ii-semiconductor process carrier eyenziwe nge-silicon carbide ecocekileyo kakhulu. Isetyenziselwa ukubamba nokuthutha ii-wafer ngexesha leenkqubo zobushushu obuphezulu ezifana ne-epitaxy, i-oxidation, i-diffusion, kunye ne-annealing. Xa kuthelekiswa neenqanawa ze-quartz zemveli, iinqanawa ze-SiC wafer zibonelela ngozinzo oluphezulu lobushushu, ungcoliseko oluphantsi, kunye nobomi benkonzo ende.

2. Kutheni ukhetha iinqanawa ze-SiC wafer kuneenqanawa ze-quartz?

Ukumelana nobushushu obuphezulu: Izinzile ukuya kuthi ga kwi-1800°C xa ithelekiswa ne-quartz (≤1200°C).
Ukuhambelana okungcono kwe-CTE: Kufuphi ne-SiC substrates, kunciphisa uxinzelelo lwe-wafer kunye nokuqhekeka.
Ukuveliswa kwamasuntswana asezantsi: Umphezulu othambileyo noxineneyo unciphisa ungcoliseko.
Ubomi obude: ubude obuphindwe kathathu ukuya kahlanu kuneenqanawa ze-quartz, nto leyo enciphisa iindleko zobunini.

3. Zeziphi iisayizi ze-wafer ezinokuxhaswa zizikhephe ze-wafer ze-SiC?

Sibonelela ngoyilo oluqhelekileyo lweIi-intshi ezi-4, ii-intshi ezi-6, kunye nee-intshi ezi-8iiwafers, ezilungiselelwe ngokupheleleyo ukuhlangabezana neemfuno zabathengi.

4. Zeziphi iinkqubo ezisetyenziswa kakhulu kwiinqanawa ze-SiC wafer?

Ukukhula kwe-SiC epitaxial
Ukuveliswa kwezixhobo ze-semiconductor zamandla (ii-SiC MOSFET, ii-SBD, ii-IGBT)
Ukufakelwa kwe-annealing kubushushu obuphezulu, i-nitridation, kunye ne-carbonization
Iinkqubo ze-oxidation kunye nokusasazwa

Ngathi

I-XKH igxile kuphuhliso lobuchwepheshe obuphezulu, imveliso, kunye nokuthengiswa kweglasi ekhethekileyo ye-optical kunye nezixhobo ezintsha zekristale. Iimveliso zethu zibonelela nge-optical electronics, i-consumer electronics, kunye ne-military. Sinikezela nge-Sapphire optical components, ii-mobile phone lens covers, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kunye ne-semiconductor crystal wafers. Ngobuchule obunobuchule kunye nezixhobo eziphambili, sigqwesile ekucutshungulweni kwemveliso okungaqhelekanga, sijolise ekubeni yishishini eliphambili le-optoelectronic materials high-tech.