I-Silicon Carbide (SiC) I-Surstrate yeCristal enye – 10×10mm I-Wafer

I-Silicon Carbide (SiC) I-Surstrate ye-Single-Crystal – 10×10mm I-Wafer Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-10×10mm Silicon Carbide (SiC) single-crystal substrate wafer sisixhobo se-semiconductor esisebenza kakuhle esenzelwe isizukulwana esilandelayo sezixhobo ze-elektroniki zamandla kunye nezicelo ze-optoelectronic. Ibonisa ukuhanjiswa kobushushu okugqwesileyo, i-bandgap ebanzi, kunye nozinzo oluhle kakhulu lweekhemikhali, ii-substrates ze-SiC zibonelela ngesiseko sezixhobo ezisebenza ngokufanelekileyo phantsi kobushushu obuphezulu, i-frequency ephezulu, kunye neemeko ze-voltage ephezulu. Ezi substrates zinqunyulwe ngokuchanekileyo zibe zii-chips zesikwere ze-10×10mm, zilungele uphando, i-prototyping, kunye nokwenziwa kwezixhobo.

Thumela i-imeyile kuthi

Iimbonakalo

Umzobo oneenkcukacha ze-Silicon Carbide (SiC) substrate wafer

Isishwankathelo se-Silicon Carbide (SiC) substrate wafer

II-10×10mm Silicon Carbide (SiC) ye-single-crystal substrate wafersisixhobo se-semiconductor esisebenza kakuhle esenzelwe isizukulwana esilandelayo se-elektroniki yamandla kunye nezicelo ze-optoelectronic. Sine-conductivity egqwesileyo yobushushu, i-bandgap ebanzi, kunye nozinzo oluhle kakhulu lweekhemikhali, i-Silicon Carbide (SiC) substrate wafer ibonelela ngesiseko sezixhobo ezisebenza ngokufanelekileyo phantsi kobushushu obuphezulu, i-frequency ephezulu, kunye neemeko ze-voltage ephezulu. Ezi substrates zinqunyulwe ngokuchanekileyoIitships zesikwere eziyi-10 × 10mm, ilungele uphando, iprototyping, kunye nokwenziwa kwezixhobo.

Umgaqo wokuvelisa i-Silicon Carbide (SiC) substrate wafer

I-Silicon Carbide (SiC) substrate wafer yenziwa nge-Physical Vapor Transport (PVT) okanye iindlela zokukhula kwe-sublimation. Le nkqubo iqala ngomgubo we-SiC ococekileyo kakhulu ofakwe kwi-graphite crucible. Phantsi kwamaqondo obushushu agqithisileyo adlula i-2,000°C kunye nendawo elawulwayo, umgubo uyanyibilika ube ngumphunga kwaye uphinde uwubeke kwi-seed crystal ejoliswe ngononophelo, wenze i-single crystal ingot enkulu, encitshisiweyo.

Nje ukuba i-SiC boule ikhule, idlula kwezi zinto zilandelayo:

Ukusikwa kwe-Ingot: Iisarha ze-wire zedayimani ezichanekileyo zisika i-SiC ingot zibe zii-wafers okanye iitships.

Ukulepha nokusila: Imiphezulu iyasikwa ukuze kususwe amabala esarha kwaye kufunyanwe ubukhulu obufanayo.

Ukupholisha oomatshini beKhemikhali (i-CMP): Ifikelela kwisiphelo sesipili esilungele i-epi kunye noburhabaxa bomphezulu obuphantsi kakhulu.

Ukufunxa ngokuzithandela: Ukufunxa ngenitrogen, ialuminium, okanye iboron kunokungeniswa ukuze kulungiselelwe iimpawu zombane (uhlobo lwe-n okanye uhlobo lwe-p).

Uhlolo lomgangatho: I-Advanced metrology iqinisekisa ukuba i-wafer flat, ubukhulu obufanayo, kunye noxinano lweziphene ziyahlangabezana neemfuno ezingqongqo ze-semiconductor-grade.

Le nkqubo inamanyathelo amaninzi iphumela kwiitships ze-wafer ze-substrate ze-10×10mm zeSilicon Carbide (SiC) eziqinileyo ezilungele ukukhula kwe-epitaxial okanye ukwenziwa kwesixhobo ngokuthe ngqo.

Iimpawu zezinto ezibonakalayo ze-Silicon Carbide (SiC) substrate wafer

I-Silicon Carbide (SiC) substrate wafer yenziwe kakhulu nge4H-SiC or 6H-SiCiintlobo ezininzi:

4H-SiC:Inamandla okusebenza nge-electron aphezulu, nto leyo eyenza ukuba ifaneleke kakhulu kwizixhobo zamandla ezifana neeMOSFET kunye neeSchottky diodes.
6H-SiC:Ibonelela ngeempawu ezizodwa zeRF kunye nezixhobo ze-optoelectronic.

Iimpawu eziphambili zomzimba zeSilicon Carbide (SiC) substrate wafer:

Isithuba esibanzi sebhendi:~3.26 eV (4H-SiC) – ivumela i-voltage ephezulu yokuqhekeka kunye nokulahleka okuphantsi kokutshintsha.
Ukuqhuba kobushushu:3–4.9 W/cm·K – isusa ubushushu ngokufanelekileyo, iqinisekisa uzinzo kwiinkqubo zamandla aphezulu.
Ubunzima:~9.2 kwisikali seMohs – iqinisekisa ukuqina koomatshini ngexesha lokucubungula nokusebenza kwesixhobo.

Ukusetyenziswa kwe-Silicon Carbide (SiC) substrate wafer

Ukuguquguquka kweSilicon Carbide (SiC) substrate wafer kuyenza ibe luncedo kumashishini amaninzi:

I-Power Electronics: Isiseko see-MOSFET, ii-IGBT, kunye nee-Schottky diodes ezisetyenziswa kwizithuthi zombane (ii-EV), izixhobo zamandla zoshishino, kunye nee-inverters zamandla avuselelekayo.

Izixhobo zeRF kunye neMicrowave: Zixhasa ii-transistors, ii-amplifiers, kunye nezixhobo zeradar ze-5G, i-satellite, kunye nezicelo zokhuselo.

Ii-Optoelectronics: Zisetyenziswa kwii-UV LEDs, ii-photodetectors, kunye nee-laser diodes apho ukukhanya okuphezulu kwe-UV kunye nozinzo kubalulekile.

I-Aerospace kunye noKhuselo: I-substrate ethembekileyo yezixhobo ze-elektroniki eziqiniswe yimitha yobushushu obuphezulu.

Amaziko oPhando kunye neeYunivesithi: Ilungele izifundo zesayensi yezinto ezibonakalayo, uphuhliso lwezixhobo zeprototype, kunye nokuvavanya iinkqubo ezintsha ze-epitaxial.

Iinkcukacha zeSilicon Carbide (SiC) substrate wafer Chips

Ipropati	Ixabiso
Ubungakanani	Isikwere se-10mm × 10mm
Ubukhulu	330–500 μm (ingenziwa ngokwezifiso)
Uhlobo lwePolytype	4H-SiC okanye 6H-SiC
Ukuqhelaniswa	I-C-plane, ngaphandle kwe-axis (0°/4°)
Umphezulu wokugqiba	Icala elinye okanye amacala amabini acwebezelayo; ilungele ukugqunywa iyafumaneka
Iinketho zokusebenzisa iziyobisi	Uhlobo lwe-N okanye uhlobo lwe-P
Ibanga	Ibanga lophando okanye inqanaba lesixhobo

Imibuzo ebuzwa rhoqo malunga ne-Silicon Carbide (SiC) substrate wafer

Umbuzo 1: Yintoni eyenza i-Silicon Carbide (SiC) substrate wafer ibe ngcono kune-silicon wafers zemveli?
I-SiC inika amandla aphezulu entsimi yokuqhekeka kwe-10×, ukumelana nobushushu okuphezulu, kunye nokulahlekelwa okuncinci kokutshintsha, okwenza ukuba ilungele izixhobo ezinamandla aphezulu nezisebenza kakuhle ezingenakuxhaswa yi-silicon.

Umbuzo 2: Ngaba i-10×10mm Silicon Carbide (SiC) substrate wafer ingafumaneka ngee-epitaxial layers?
Ewe. Sinikezela ngee-substrates ezilungele i-epi kwaye sinokuhambisa ii-wafers ezinee-epitaxial layers ezenziwe ngokwezifiso ukuhlangabezana neemfuno ezithile zesixhobo samandla okanye zokwenziwa kwe-LED.

Umbuzo 3: Ngaba ubungakanani obuqhelekileyo kunye namanqanaba okusebenzisa iziyobisi ayatholakala?
Ngokuqinisekileyo. Nangona iitships ze-10×10mm zisemgangathweni wophando kunye nokuthatha iisampulu zezixhobo, ubukhulu obukhethekileyo, ubukhulu, kunye neeprofayili zokusebenzisa iziyobisi ziyafumaneka xa ziceliwe.

Umbuzo 4: Zihlala ixesha elide kangakanani ezi wafers kwiindawo eziyingozi kakhulu?
I-SiC igcina ulwakhiwo lwayo lusemgangathweni kwaye isebenza kakuhle njengombane ngaphezu kwama-600°C naphantsi kwemitha ephezulu, nto leyo eyenza ukuba ilungele ukusetyenziswa kweenqwelo-moya kunye nezixhobo zombane zodidi lomkhosi.

Ngathi

I-XKH igxile kuphuhliso lobuchwepheshe obuphezulu, imveliso, kunye nokuthengiswa kweglasi ekhethekileyo ye-optical kunye nezixhobo ezintsha zekristale. Iimveliso zethu zibonelela nge-optical electronics, i-consumer electronics, kunye ne-military. Sinikezela nge-Sapphire optical components, ii-mobile phone lens covers, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kunye ne-semiconductor crystal wafers. Ngobuchule obunobuchule kunye nezixhobo eziphambili, sigqwesile ekucutshungulweni kwemveliso okungaqhelekanga, sijolise ekubeni yishishini eliphambili le-optoelectronic materials high-tech.