I-Silicon Carbide SiC Ingot 6inch N uhlobo Dummy/prime grade ubukhulu can ba ngokwezifiso

Inkcazo emfutshane:

I-Silicon Carbide (i-SiC) yinto ye-semiconductor ebanzi efumana ukutsalwa okukhulu kumashishini amaninzi ngenxa yeempawu zayo eziphezulu zombane, ubushushu, kunye noomatshini. I-SiC Ingot kwi-N-type Dummy/Prime grade eyi-6-intshi yenzelwe ngokukodwa ukuveliswa kwezixhobo ze-semiconductor eziphambili, kubandakanya usetyenziso lwamandla aphezulu kunye nolwe-frequency ephezulu. Ngeendlela zobukhulu obunokulungiselelwa kunye neenkcukacha ezichanekileyo, le ingot ye-SiC ibonelela ngesisombululo esifanelekileyo sophuhliso lwezixhobo ezisetyenziswa kwizithuthi zombane, iinkqubo zamandla zoshishino, unxibelelwano, kunye namanye amacandelo asebenza kakhulu. Ukuqina kwe-SiC kwiimeko ze-voltage ephezulu, ubushushu obuphezulu, kunye nolwe-frequency ephezulu kuqinisekisa ukusebenza okuhlala ixesha elide, okusebenzayo, kunye nokuthembekileyo kwiintlobo ngeentlobo zezicelo.
I-SiC Ingot ifumaneka ngobukhulu obuziisentimitha ezi-6, ububanzi bayo buyi-150.25mm ± 0.25mm kunye nobukhulu obungaphezulu kwe-10mm, nto leyo eyenza ukuba ilungele ukunqunyulwa kwe-wafer. Le mveliso inika ulwalathiso olucacileyo lomphezulu oluyi-4° ukuya kwi-<11-20> ± 0.2°, ukuqinisekisa ukuchaneka okuphezulu kokwenziwa kwesixhobo. Ukongeza, i-ingot inolwalathiso oluphambili oluthe tyaba oluyi-<1-100> ± 5°, olunegalelo ekulungelelanisweni kwekristale kunye nokusebenza kakuhle kokucubungula.
Ngokumelana okuphezulu okuphakathi kwe-0.015–0.0285 Ω·cm, uxinano oluphantsi lwe-micropipe oluyi-<0.5, kunye nomgangatho ogqwesileyo womphetho, le SiC Ingot ifanelekile kwimveliso yezixhobo zamandla ezifuna iziphene ezincinci kunye nokusebenza okuphezulu phantsi kweemeko ezinzima.

Thumela i-imeyile kuthi

Iimbonakalo

Iipropati

Udidi: Udidi lweMveliso (iDummy/Prime)
Ubungakanani: ububanzi obuyi-intshi ezi-6
Ububanzi: 150.25mm ± 0.25mm
Ubukhulu: >10mm (Ubukhulu obunokulungiselelwa bufumaneka xa buceliwe)
Ukujongwa komphezulu: 4° ukuya <11-20> ± 0.2°, okuqinisekisa umgangatho ophezulu wekristale kunye nokulungelelaniswa ngokuchanekileyo kokwenziwa kwesixhobo.
Indlela Ephambili Yokujolisa Ngokuthe Tye: <1-100> ± 5°, uphawu oluphambili lokusika i-ingot kwii-wafers ngempumelelo kunye nokukhula kwekristale okufanelekileyo.
Ubude obuPhambili obuSicaba: 47.5mm ± 1.5mm, yenzelwe ukuphathwa lula kunye nokusika ngokuchanekileyo.
Ukumelana: 0.015–0.0285 Ω·cm, ifanelekile ukusetyenziswa kwizixhobo zamandla ezisebenza kakuhle.
Uxinano lweMicropipe: <0.5, ukuqinisekisa ukuba akukho ziphene zingako ezinokuchaphazela ukusebenza kwezixhobo ezenziweyo.
I-BPD (Ubuninzi beBoron Pitting): <2000, ixabiso eliphantsi elibonisa ubunyulu obuphezulu bekristale kunye noxinano oluphantsi lwesiphene.
I-TSD (Uxinano lwe-Threading Screw Dislocation): <500, eqinisekisa ukuthembeka okugqwesileyo kwezinto kwizixhobo ezisebenza kakuhle.
Iindawo zePolytype: Akukho - i-ingot ayinazo iziphene zepolytype, inika umgangatho ophezulu wezinto ezisetyenziswayo kwizicelo eziphezulu.
Ii-Edge Indents: <3, ezinobubanzi nobunzulu obuyi-1mm, ukuqinisekisa ukuba umphezulu womphezulu awumonakalisi kakhulu kwaye kugcinwa ukuthembeka kwe-ingot ukuze i-wafer inqunyulwe kakuhle.
Iintanda zomphetho: 3, <1mm nganye, kwaye akukho monakalo mkhulu emphethoni, okuqinisekisa ukuphathwa ngokukhuselekileyo kunye nokuqhubekeka kokusebenza.
Ukupakisha: Ibhokisi yewafer – i-SiC ingot ipakishwe ngokukhuselekileyo kwibhokisi yewafer ukuqinisekisa ukuthuthwa nokuphathwa ngokukhuselekileyo.

Izicelo

Izixhobo zombane:I-SiC ingot eyi-intshi ezi-6 isetyenziswa kakhulu ekuveliseni izixhobo ze-elektroniki ezisebenzisa amandla ezifana neeMOSFET, ii-IGBT, kunye neediode, eziyinxalenye ebalulekileyo kwiinkqubo zokuguqula amandla. Ezi zixhobo zisetyenziswa kakhulu kwii-inverters zezithuthi zombane (EV), ii-industrial motor drives, izixhobo zamandla, kunye neenkqubo zokugcina amandla. Amandla eSiC okusebenza kwiivolthi eziphezulu, iifrequensi eziphezulu, kunye namaqondo obushushu aphezulu enza ukuba ilungele ukusetyenziswa apho izixhobo ze-silicon (Si) zemveli ziya kuba nzima ukusebenza ngokufanelekileyo.

Iimoto zombane (ii-EV):Kwizithuthi zombane, izinto ezisekwe kwiSiC zibalulekile ekuphuhlisweni kweemodyuli zamandla kwii-inverters, ii-DC-DC converters, kunye neetshaja ezikwibhodi. Ukuqhuba okuphezulu kobushushu beSiC kuvumela ukuveliswa kobushushu okunciphileyo kunye nokusebenza ngcono kokuguqulwa kwamandla, okubalulekileyo ekuphuculeni ukusebenza kunye noluhlu lokuqhuba lwezithuthi zombane. Ukongeza, izixhobo zeSiC zivumela izinto ezincinci, ezikhaphukhaphu, nezithembekileyo ngakumbi, ezinegalelo ekusebenzeni ngokubanzi kweenkqubo ze-EV.

Iinkqubo zamandla ahlaziyekayo:Ii-ingots ze-SiC zizinto ezibalulekileyo ekuphuhlisweni kwezixhobo zokuguqula umbane ezisetyenziswa kwiinkqubo zamandla avuselelekayo, kuquka ii-solar inverters, ii-wind turbines, kunye nezisombululo zokugcina umbane. Amandla aphezulu okuphatha umbane e-SiC kunye nolawulo olusebenzayo lobushushu avumela ukusebenza kakuhle kokuguqulwa kwamandla kunye nokuthembeka okuphuculweyo kwezi nkqubo. Ukusetyenziswa kwayo kumandla avuselelekayo kunceda ukuqhuba imizamo yehlabathi ekuzinzeni kwamandla.

Unxibelelwano:I-SiC ingot eyi-intshi ezi-6 ikwafanelekile ukuvelisa izinto ezisetyenziswa kwizicelo ze-RF (radio frequency) ezinamandla aphezulu. Ezi ziquka ii-amplifiers, ii-oscillators, kunye nezihluzi ezisetyenziswa kwiinkqubo zonxibelelwano kunye nonxibelelwano lwesathelayithi. Ukukwazi kwe-SiC ukuphatha amaza aphezulu kunye namandla aphezulu kuyenza ibe yinto efanelekileyo kwizixhobo zonxibelelwano ezifuna ukusebenza okuqinileyo kunye nokulahleka okuncinci kwesignali.

Inqwelo-moya kunye noKhuselo:I-voltage ephezulu ye-SiC kunye nokumelana namaqondo obushushu aphezulu kwenza ukuba ilungele ukusetyenziswa kweenqwelo-moya kunye nokuzikhusela. Izinto ezenziwe ngee-ingots ze-SiC zisetyenziswa kwiinkqubo ze-radar, unxibelelwano lwesathelayithi, kunye ne-elektroniki yamandla kwiinqwelo-moya kunye neenqanawa. Izinto ezisekwe kwi-SiC zenza ukuba iinkqubo zeenqwelo-moya zisebenze phantsi kweemeko ezinzima ezifunyanwa kwindawo nakwiindawo eziphakamileyo.

Ukwenziwa kwezinto ngokuzenzekelayo kwimizi-mveliso:Kwi-automation yemizi-mveliso, ii-SiC components zisetyenziswa kwii-sensors, ii-actuators, kunye neenkqubo zolawulo ezifuna ukusebenza kwiindawo ezinzima. Izixhobo ezisekelwe kwiSiC zisetyenziswa kwiimashini ezifuna ii-components ezisebenzayo nezihlala ixesha elide ezikwaziyo ukumelana namaqondo obushushu aphezulu kunye noxinzelelo lombane.

Itheyibhile yeNkcazelo yeMveliso

Ipropati	Inkcazo
Ibanga	Imveliso (I-Dummy/Prime)
Ubungakanani	Ii-intshi ezi-6
Ububanzi	150.25mm ± 0.25mm
Ubukhulu	>10mm (Ingenziwa ngokwezifiso)
Ukujongwa komphezulu	4° ukuya <11-20> ± 0.2°
Uqhelaniso oluPhambili oluSicaba	<1-100> ± 5°
Ubude obuPhambili obuSicaba	47.5mm ± 1.5mm
Ukuxhathisa	0.015–0.0285 Ω·cm
Uxinano lweeMipayipi ezincinci	<0.5
Ubuninzi beBoron Pitting (BPD)	<2000
Uxinano lweSikrufu sokuKhutshwa kweMisonto (TSD)	<500
Iindawo zePolytype	Akukho nanye
Ii-Edge Indents	<3, ububanzi kunye nobunzulu obuyi-1mm
Iintanda zomphetho	3, <1mm/nganye
Ukupakisha	Ityala lesonka esincinci

Isiphelo

I-SiC Ingot eyi-6-intshi – uhlobo lwe-N Dummy/Prime grade sisixhobo esikumgangatho ophezulu esihlangabezana neemfuno ezingqongqo zoshishino lwe-semiconductor. Ukuqhuba kwayo okuphezulu kobushushu, ukumelana kwayo okugqwesileyo, kunye noxinano oluphantsi lwesiphene kwenza ukuba ibe lukhetho oluhle kakhulu kwimveliso yezixhobo ze-elektroniki ezinamandla aphezulu, izinto zeemoto, iinkqubo zonxibelelwano, kunye neenkqubo zamandla avuselelekayo. Ubukhulu kunye neenkcukacha ezichanekileyo ezinokwenziwa ngokwezifiso ziqinisekisa ukuba le ingot yeSiC inokulungiswa kwiindidi ezahlukeneyo zezicelo, iqinisekisa ukusebenza okuphezulu kunye nokuthembeka kwiindawo ezifuna kakhulu. Ngolwazi oluthe kratya okanye ukufaka iodolo, nceda unxibelelane neqela lethu lokuthengisa.