Ityhubhu yeSithando seSilicon Carbide (SiC) ethe tyaba

Ityhubhu yeSitovu esiTye yeSilicon Carbide (SiC) Umfanekiso obonisiweyo

Inkcazo emfutshane:

Ityhubhu yeSilicon Carbide (SiC) Horizontal Furnace isebenza njengegumbi eliphambili lenkqubo kunye nomda woxinzelelo lweempendulo zesigaba segesi esishushu kakhulu kunye nonyango lobushushu olusetyenziswa ekwenzeni i-semiconductor, ukuvelisa i-photovoltaic, kunye nokucubungula izinto eziphambili.

Thumela i-imeyile kuthi

Iimbonakalo

Umzobo oneenkcukacha

Ukubekwa kweMveliso kunye neNgcebiso yeXabiso

Le tube yenziwe ngesakhiwo seSiC esenziwe ngenxalenye enye, esidityaniswe nomaleko okhuselayo weCVD-SiC oxineneyo, inika ukuhanjiswa kobushushu okugqwesileyo, ungcoliseko oluncinci, ukuthembeka okuqinileyo koomatshini, kunye nokumelana okubalaseleyo kweekhemikhali.
Uyilo lwayo luqinisekisa ukufana kobushushu obuphezulu, amaxesha eenkonzo ezinde, kunye nokusebenza okuzinzileyo kwexesha elide.

Iingenelo ezingundoqo

Iphucula ukuhambelana kobushushu benkqubo, ucoceko, kunye nokusebenza kakuhle kwezixhobo ngokubanzi (OEE).
Inciphisa ixesha lokungasebenzi lokucoca kwaye yandisa imijikelo yokutshintsha, inciphisa iindleko zizonke zobunini (TCO).
Inika igumbi elihlala ixesha elide elikwaziyo ukusingatha iikhemikhali ezishushu kakhulu ze-oxidative kunye ne-chlorine kunye nomngcipheko omncinci.

Ii-atmospheres ezisebenzayo kunye neWindows yeNkqubo

Iigesi ezisebenzayo: ioksijini (O₂) kunye neminye imixube yokuxoza
Iigesi zokuthwala/ezikhuselayo: i-nitrogen (N₂) kunye neegesi ezingasebenzi kakuhle
Iintlobo ezihambelanayo: iigesi ezithwala i-chlorine (iresiphi yokulawula uxinzelelo kunye nexesha lokuhlala)

Iinkqubo eziqhelekileyo: i-oxidation eyomileyo/emanzi, i-annealing, i-diffusion, i-LPCVD/CVD deposition, i-activation surface, i-photovoltaic passivation, i-functional thin-film growth, i-carbonization, i-nitridation, nokunye.

Iimeko Zokusebenza

Ubushushu: ubushushu begumbi ukuya kuthi ga kwi-1250 °C (vumela umda wokhuseleko we-10–15% kuxhomekeke kuyilo lwesifudumezi kunye ne-ΔT)
Uxinzelelo: ukusuka kumanqanaba e-vacuum anoxinzelelo oluphantsi/LPCVD ukuya kuxinzelelo oluhle oluphantse lube semoyeni (i-spec yokugqibela nge-odolo nganye yokuthenga)

Izixhobo kunye neLogic yoLwakhiwo

Umzimba weMonolithic SiC (Owenziweyo Owongeziweyo)

I-β-SiC enoxinano oluphezulu okanye i-SiC enezigaba ezininzi, eyakhiwe njengesakhi esinye—akukho malungu okanye imithungo eqinisiweyo enokuvuza okanye idale iindawo zoxinzelelo.
Ukuqhuba okuphezulu kobushushu kwenza ukuba ubushushu bukhawuleze buphenduleke kwaye bufane kakuhle kakhulu kwi-axial/radial temperature.
I-coefficient ephantsi nezinzileyo yokwandiswa kobushushu (CTE) iqinisekisa uzinzo olunemilinganiselo kunye nezitywino ezithembekileyo kumaqondo obushushu aphezulu.

Ukwaleka okuSebenzayo kweCVD SiC

Ifakwe kwindawo ecocekileyo kakhulu (ubumdaka bomphezulu/bokugquma <5 ppm) ukuze kuthintelwe ukuveliswa kwamasuntswana kunye nokukhululwa kwee-ion zesinyithi.
Ukungasebenzi kakuhle kweekhemikhali ngokuchasene neegesi ezithwala i-oxidizing kunye ne-chlorine, okuthintela ukuhlaselwa okanye ukuphinda kufakwe eludongeni.
Iinketho zobukhulu obuthile kwindawo ethile ukuze kulinganiswe ukumelana nokugqwala kunye nokusabela kubushushu.

Inzuzo edibeneyo: umzimba we-SiC oqinileyo unika amandla olwakhiwo kunye nokuqhuba ubushushu, ngelixa umaleko we-CVD uqinisekisa ukucoceka kunye nokumelana nokugqwala ukuze kuthembeke kakhulu kwaye kuphume amandla.

Iithagethi eziphambili zokusebenza

Ubushushu bokusetyenziswa rhoqo:≤ 1250 °C
Ukungcola kwe-substrate enkulu:< 300 ppm
Ukungcola komphezulu we-CVD-SiC:< 5 ppm
Ukunyamezelana okulinganayo: OD ± 0.3–0.5 mm; i-coaxiality ≤ 0.3 mm/m (ifumaneka ngokuqina)
Uburhabaxa bodonga lwangaphakathi: Ra ≤ 0.8–1.6 µm (ukugqitywa okukhazimlisiweyo okanye okukufutshane nesipili akunyanzelekanga)
Izinga lokuvuza kweHelium: ≤ 1 × 10⁻⁹ Pa·m³/s
Ukunyamezela ukutshiswa bubushushu: iyasinda xa ishushu/ibanda ngokuphindaphindiweyo ngaphandle kokuqhekeka okanye ukuqhekeka
Ukuhlanganiswa kwegumbi lokucoca: Iklasi ye-ISO 5–6 enamanqanaba aqinisekisiweyo entsalela ye-particle/metal-ion

Uqwalaselo kunye neenketho

Ijiyometri: OD 50–400 mm (nkulu ngokwesilinganiselo) enolwakhiwo olude lwento enye; ubukhulu bodonga bulungiselelwe amandla oomatshini, ubunzima, kunye nokuguquguquka kobushushu.
Uyilo lokugqibela: iiflanges, intsimbi-umlomo, i-bayonet, iiringi zokufumana, ii-grooves ze-O-ring, kunye nee-pump-out ezenziwe ngokwezifiso okanye ii-pressure ports.
Amachweba asebenzayo: iindlela zokungenisa umoya kwi-thermocouple, izihlalo zeglasi ezibonakalayo, iindawo zokungena zegesi ezidlulayo—zonke zenzelwe ukusebenza ngobushushu obuphezulu, zingavuzi kakhulu.
Iinkqubo zokugquma: udonga lwangaphakathi (oluzenzekelayo), udonga lwangaphandle, okanye uphahla olupheleleyo; ukhuselo olujoliswe kulo okanye ubukhulu obulinganisiweyo kwiindawo ezixineneyo kakhulu.
Unyango kunye nococeko lomphezulu: amanqanaba amaninzi okurhabaxa, ukucocwa kwe-ultrasonic/DI, kunye neenkqubo zokubhaka/zokomisa ezenziwe ngokwezifiso.
Izixhobo: iiflange zegrafiti/zeseramikhi/zesinyithi, izitywino, izixhobo zokufumana indawo, imikhono yokuphatha, kunye nee-cradle zokugcina izinto.

Uthelekiso loKusebenza

I-Metric	Ityhubhu yeSiC	Ityhubhu yeQuartz	Ityhubhu yeAlumina	Umbhobho weGraphite
Ukuqhuba kobushushu	Phezulu, iyunifomu	Iphantsi	Iphantsi	Phezulu
Amandla/ukurhubuluza okushushu okuphezulu	Igqwesile	Ilungile	Kulungile	Ilungile (ingachaphazeleki yi-oxidation)
Ukothuka kobushushu	Igqwesile	Ubuthathaka	Iphakathi	Igqwesile
Ucoceko / ii-ion zesinyithi	Igqwesile (ephantsi)	Iphakathi	Iphakathi	Imbi
I-Oxidation kunye ne-Cl-chemistry	Igqwesile	Ilungile	Kulungile	Imbi (iyayixilisa)
Ubomi benkonzo xa kuthelekiswa neendleko	Ubomi obuphakathi / obude	Ephantsi / emfutshane	Phakathi / phakathi	Iphakathi / inqongophele okusingqongileyo

Imibuzo Ebuzwa Rhoqo (Imibuzo Ebuzwa Rhoqo)

Umbuzo 1. Kutheni ukhetha umzimba we-SiC oprintiweyo nge-3D?
A. Isusa imithungo kunye neebraze ezinokuvuza okanye zigxile kuxinzelelo, kwaye ixhasa iijometri ezintsonkothileyo ngokuchaneka okulinganayo kobukhulu.

Umbuzo 2. Ingaba i-SiC iyamelana neegesi ezithwala i-chlorine?
A. Ewe. I-CVD-SiC ayisebenzi kakuhle ngaphakathi kwemida yobushushu obuchaziweyo kunye noxinzelelo. Kwiindawo ezinefuthe elikhulu, kucetyiswa ukuba kufakwe ii-coating ezixineneyo kunye neenkqubo zokucoca/zokukhupha umoya eziqinileyo.

Umbuzo 3. Isebenza njani ngcono kuneetyhubhu ze-quartz?
A. I-SiC inika ubomi obude benkonzo, ukufana okungcono kobushushu, ungcoliseko oluphantsi lwamasuntswana/i-ion yesinyithi, kunye ne-TCO ephucukileyo—ingakumbi ngaphaya kwe-~900 °C okanye kwiindawo ezishushu/ezine-chlorine.

Umbuzo 4. Ngaba ityhubhu ingamelana nokurhangqwa okukhawulezayo kobushushu?
A. Ewe, ukuba nje izikhokelo eziphezulu ze-ΔT kunye ne-ramp-rate ziyalandelwa. Ukudibanisa umzimba we-κ SiC ophezulu kunye nomaleko obhityileyo we-CVD kuxhasa utshintsho olukhawulezayo lobushushu.

Umbuzo 5. Kufuneka nini ukutshintshwa?
A. Buyisela ityhubhu ukuba ubona imifantu yeflange okanye yomphetho, imingxuma yokugquma okanye ukuqhekeka, amazinga okuvuza ayandayo, ukushukuma okukhulu kobushushu, okanye ukuveliswa kwamasuntswana angaqhelekanga.

Ngathi

I-XKH igxile kuphuhliso lobuchwepheshe obuphezulu, imveliso, kunye nokuthengiswa kweglasi ekhethekileyo ye-optical kunye nezixhobo ezintsha zekristale. Iimveliso zethu zibonelela nge-optical electronics, i-consumer electronics, kunye ne-military. Sinikezela nge-Sapphire optical components, ii-mobile phone lens covers, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kunye ne-semiconductor crystal wafers. Ngobuchule obunobuchule kunye nezixhobo eziphambili, sigqwesile ekucutshungulweni kwemveliso okungaqhelekanga, sijolise ekubeni yishishini eliphambili le-optoelectronic materials high-tech.