Ukumelana ne-silicon carbide isithando sekristale eside esikhula nge-intshi eyi-6/8/12 ye-SiC ingot crystal PVT indlela

Ukumelana ne-silicon carbide isithando sekristale eside esikhulayo intshi eyi-6/8/12 intshi ye-SiC ingot crystal PVT indlela Umfanekiso obonisiweyo

Inkcazo emfutshane:

Isithando sokukhulisa ukumelana ne-silicon carbide (indlela ye-PVT, indlela yokudlulisa umphunga ngokwasemzimbeni) sisixhobo esibalulekileyo sokukhula kwe-silicon carbide (SiC) single crystal ngomgaqo we-sublimation-recrystallization obushushu obuphezulu. Le teknoloji isebenzisa ukufudumeza ukumelana (umzimba wokufudumeza i-graphite) ukuze i-sublimate izinto eziluhlaza ze-SiC kubushushu obuphezulu be-2000 ~ 2500℃, kwaye iphinde i-crystallise kwindawo yobushushu obuphantsi (i-seed crystal) ukuze yenze i-SiC single crystal esemgangathweni ophezulu (4H/6H-SiC). Indlela ye-PVT yinkqubo ephambili yokuvelisa ngobuninzi ii-substrates ze-SiC ze-intshi ezi-6 nangaphantsi, ezisetyenziswa kakhulu ekulungiseleleni ii-substrate zee-semiconductors zamandla (ezifana nee-MOSFET, ii-SBD) kunye nezixhobo ze-radio frequency (GaN-on-SiC).

Thumela i-imeyile kuthi

Iimbonakalo

Umgaqo wokusebenza:

1. Ukulayisha izinto eziluhlaza: umgubo we-SiC ococekileyo kakhulu (okanye ibhloko) obekwe ezantsi kwe-graphite crucible (indawo yobushushu obuphezulu).

2. Indawo yokufunxa umoya/ukungasebenzi: faka umoya kwigumbi lesithando (<10⁻³ mbar) okanye ukhuphe igesi engasebenziyo (Ar).

3. Ubushushu obuphezulu bokunyibilikisa: ukufudumeza okuchaseneyo ukuya kwi-2000 ~ 2500℃, ukubola kweSiC kwiSi, Si₂C, SiC₂ kunye nezinye izinto zesigaba segesi.

4. Ukudluliselwa kwesigaba segesi: i-gradient yobushushu iqhuba ukusasazeka kwezinto zesigaba segesi ukuya kummandla wobushushu obuphantsi (isiphelo sembewu).

5. Ukukhula kwekristale: Isigaba segesi siphinda sibuyele kumphezulu wekristale yeMbewu size sikhule kwicala eliya ...

Iiparameter eziphambili:

1. I-gradient yobushushu: 20~50℃/cm (lawula izinga lokukhula kunye noxinano lwesiphene).

2. Uxinzelelo: 1 ~ 100mbar (uxinzelelo oluphantsi lokunciphisa ukufakwa kokungcola).

3. Izinga lokukhula: 0.1 ~ 1mm/h (elichaphazela umgangatho wekristale kunye nokusebenza kakuhle kwemveliso).

Iimpawu eziphambili:

(1) Umgangatho wekristale
Uxinano oluphantsi lwesiphene: uxinano lwe-microtubule <1 cm⁻², uxinano lokuphuma kwembewu yi-10³~10⁴ cm⁻² (ngokusebenzisa ulungelelwaniso lwembewu kunye nolawulo lwenkqubo).

Ulawulo lohlobo lwePolycrystalline: lunokukhula nge-4H-SiC (eqhelekileyo), i-6H-SiC, i-4H-SiC proportions >90% (kufuneka ilawule ngokuchanekileyo i-gradient yobushushu kunye ne-gas phase stoichiometric ratio).

(2) Ukusebenza kwezixhobo
Uzinzo lobushushu obuphezulu: ubushushu bomzimba bokufudumeza igrafiti >2500℃, umzimba wesithando usebenzisa uyilo lobushushu oluneeleya ezininzi (ezifana negrafiti evakalelwayo + ijakethi epholiswe ngamanzi).

Ulawulo lokufana: Ukuguquguquka kobushushu be-Axial/radial ye-±5 ° C kuqinisekisa ukuhambelana kobubanzi bekristale (ukuphambuka kobukhulu be-substrate ye-6-intshi <5%).

Inqanaba lokuzenzekelayo: Inkqubo yolawulo lwe-PLC edibeneyo, ukujonga ubushushu ngexesha langempela, uxinzelelo kunye nesantya sokukhula.

(3) Iingenelo zobuchwepheshe
Ukusetyenziswa kakhulu kwezinto: izinga lokuguqulwa kwezinto eziluhlaza >70% (lingcono kunendlela ye-CVD).

Ukuhambelana kobukhulu obukhulu: Imveliso yobunzima obuziisentimitha ezi-6 ifezekisiwe, iisentimitha ezi-8 zikwinqanaba lophuhliso.

(4) Ukusetyenziswa kwamandla kunye neendleko
Ukusetyenziswa kwamandla kwesithando esinye yi-300~800kW·h, nto leyo ethetha i-40%~60% yeendleko zokuvelisa i-SiC substrate.

Utyalo-mali lwezixhobo luphezulu (1.5M 3M ngeyunithi nganye), kodwa iindleko zeyunithi yesiseko ziphantsi kunendlela yeCVD.

Izicelo eziphambili:

1. Izixhobo ze-elektroniki: I-substrate ye-SiC MOSFET ye-inverter yesithuthi sombane kunye ne-inverter ye-photovoltaic.

2. Izixhobo ze-Rf: Isiseko se-5G se-GaN-on-SiC epitaxial substrate (ngokuyintloko yi-4H-SiC).

3. Izixhobo ezingqongileyo ezigqithisileyo: izixhobo zokuvavanya ubushushu obuphezulu kunye noxinzelelo oluphezulu lwezixhobo zeenqwelo-moya kunye nezamandla enyukliya.

Iiparameter zobugcisa:

Inkcazo	Iinkcukacha
Ubukhulu (L × W × H)	2500 × 2400 × 3456 mm okanye wenze ngokwezifiso
Ububanzi beCrucible	900 mm
Uxinzelelo oluPhezulu lweVacuum	6 × 10⁻⁴ Pa (emva kweyure eyi-1.5 ye-vacuum)
Izinga lokuvuza	≤5 Pa/12h (ukubhaka ngaphandle)
Ububanzi beShaft yokujikeleza	50 mm
Isantya sokujikelezisa	0.5–5 ngomzuzu
Indlela Yokufudumeza	Ukufudumeza kokumelana nombane
Ubushushu obukhulu besithando somlilo	2500°C
Amandla okufudumeza	40 kW × 2 × 20 kW
Ukulinganisa Ubushushu	I-pyrometer ye-infrared enemibala emibini
Uluhlu lobushushu	900–3000°C
Ukuchaneka kobushushu	±1°C
Uluhlu loxinzelelo	1–700 mbar
Ukuchaneka koLawulo loxinzelelo	1–10 mbar: ±0.5% FS; 10–100 mbar: ±0.5% FS; 100–700 mbar: ±0.5% FS
Uhlobo Lokusebenza	Iinketho zokhuseleko ezisezantsi, ezenziwe ngesandla/ezenzekelayo
Iimpawu eziKhethekileyo	Ukulinganisa ubushushu obuphindwe kabini, iindawo ezininzi zokufudumeza

Iinkonzo ze-XKH:

I-XKH ibonelela ngenkonzo yenkqubo yonke ye-SiC PVT furnace, kubandakanya ukwenziwa ngokwezifiso kwezixhobo (uyilo lwentsimi yobushushu, ulawulo oluzenzekelayo), uphuhliso lwenkqubo (ulawulo lwemilo yekristale, ukulungiswa kweziphene), uqeqesho lobuchwephesha (ukusebenza kunye nokugcinwa) kunye nenkxaso emva kokuthengisa (ukutshintshwa kweendawo zegrafiti, ukulinganiswa kwentsimi yobushushu) ukunceda abathengi ukuba bafezekise imveliso yobunzima bekristale ekumgangatho ophezulu. Sikwabonelela ngeenkonzo zokuphucula inkqubo ukuze siqhubeke nokuphucula isivuno sekristale kunye nokusebenza kakuhle kokukhula, ngexesha eliqhelekileyo lokukhokela leenyanga ezi-3-6.