Ukumelana neSilicon carbide iziko elide lekristale elikhulayo 6/8/12inch intshi yeSiC ingot crystal PVT indlela

Ukumelana neSilicon carbide iziko elide lekristale elikhulayo 6/8/12inch intshi yeSiC ingot yecrystal PVT indlela eFakelweyo

Inkcazelo emfutshane:

I-Silicon carbide resistance growth furnace (indlela ye-PVT, indlela yokudlulisa umphunga womzimba) sisixhobo esiphambili sokukhula kwe-silicon carbide (SiC) ikristale enye ngomgangatho ophezulu we-sublimation-recrystallization principle. Itekhnoloji isebenzisa ukufudumeza okuxhathisayo (i-graphite ukufudumeza umzimba) ukuthoba i-SiC imathiriyeli ekrwada kubushushu obuphezulu be-2000 ~ 2500 ℃, kwaye iphinde ihlaziye kwindawo yobushushu obuphantsi (ikristale yembewu) ukwenza i-crystal eyodwa ye-SiC (4H / 6H-SiC). Indlela ye-PVT yinkqubo eqhelekileyo yokuveliswa kobuninzi be-SiC substrates yee-intshi ze-6 nangaphantsi, esetyenziswa ngokubanzi ekulungiseleleni i-substrate ye-semiconductors yamandla (njenge-MOSFETs, i-SBD) kunye nezixhobo ze-radio frequency (GaN-on-SiC).

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Umgaqo wokuSebenza:

1. Ukulayishwa kwezinto eziluhlaza: ukucoceka okuphezulu kwe-SiC powder (okanye ibhloko) ebekwe phantsi kwe-graphite crucible (indawo yokushisa ephezulu).

2. Vacuum/indawo engasebenziyo: vacuum igumbi leziko (<10⁻³ mbar) okanye ugqithise igesi engasebenziyo (Ar).

3. I-sublimation ephezulu yokushisa: ukufudumeza ukuxhathisa kwi-2000 ~ 2500 ℃, ukuchithwa kwe-SiC kwi-Si, i-Si₂C, i-SiC₂ kunye nezinye iinqununu zesigaba segesi.

4. Ukuhanjiswa kwesigaba segesi: i-gradient yeqondo lokushisa iqhuba ukusasazwa kwezinto zesigaba segesi kwindawo yokushisa ephantsi (isiphelo sembewu).

5. Ukukhula kweCrystal: Isigaba segesi siphinda sihlaziye phezu komhlaba we-Crystal yeMbewu kwaye sikhule ngendlela ehambelana ne-C-axis okanye i-A-axis.

Iiparamitha eziphambili:

1. Iqondo lobushushu: 20 ~ 50℃ / cm (ukulawula izinga lokukhula kunye nobuninzi besiphako).

2. Uxinzelelo: 1 ~ 100mbar (uxinzelelo oluphantsi lokunciphisa ukufakwa kokungcola).

I-3.Izinga lokukhula: 0.1 ~ 1mm / h (echaphazela umgangatho we-crystal kunye nokusebenza kakuhle kwemveliso).

Iimpawu eziphambili:

(1) Umgangatho weCrystal
Uxinaniso lwesiphene esisezantsi: Uxinaniso lwemicrotubule <1 cm⁻², ingxinano yokususa i-10³~10⁴ cm⁻² (ngokwandisa imbewu kunye nolawulo lwenkqubo).

Ukulawulwa kohlobo lwe-Polycrystalline: inokukhula i-4H-SiC (eqhelekileyo), i-6H-SiC, i-4H-SiC i-proportion> 90% (idinga ukulawula ngokuchanekileyo i-gradient yeqondo lokushisa kunye ne-gas phase stoichiometric ratio).

(2) Ukusebenza kwezixhobo
Uzinzo lobushushu obuphezulu: igraphite yokufudumeza ubushushu bomzimba>2500℃, umzimba wesithando somlilo wamkela uyilo lokugquma olunamaleko amaninzi (olufana negraphite ezivayo + ibhatyi epholiswe ngamanzi).

Ulawulo olufanayo: Ukutshintsha kweqondo lobushushu be-Axial/radial ye-±5 ° C kuqinisekisa ukuhambelana kwedayamitha yekristale (i-6-intshi ye-substrate ukutenxa ubukhulu <5%).

I-Degree of automation: Inkqubo yokulawula ye-PLC edibeneyo, ukujonga ixesha lokwenene lobushushu, uxinzelelo kunye nezinga lokukhula.

(3) Iinzuzo zobuchwepheshe
Ukusetyenziswa kwezinto eziphezulu: izinga lokuguqulwa kwezinto eziluhlaza> 70% (ngcono kunendlela yeCVD).

Ukuhambelana kobukhulu obukhulu: i-6-intshi imveliso yobuninzi ifunyenwe, i-8-intshi ikwinqanaba lophuhliso.

(4) Ukusetyenziswa kwamandla kunye neendleko
Ukusetyenziswa kwamandla kwisithando somlilo esisodwa yi-300 ~ 800kW · h, kubalwa i-40% ~ 60% yeendleko zokuvelisa i-substrate ye-SiC.

Utyalo-mali lwezixhobo luphezulu (1.5M 3M ngeyunithi nganye), kodwa ixabiso leyunithi yesubstrate lingaphantsi kunendlela ye-CVD.

Usetyenziso olungundoqo:

1. I-electronics yamandla: I-substrate ye-SiC MOSFET ye-inverter yemoto yombane kunye ne-photovoltaic inverter.

2. Izixhobo ze-Rf: I-5G isiseko sesikhululo se-GaN-on-SiC epitaxial substrate (ikakhulukazi i-4H-SiC).

3. Izixhobo zokusingqongileyo ezigqithisileyo: ubushushu obuphezulu kunye nezinzwa zoxinzelelo oluphezulu kwi-aerospace kunye nezixhobo zamandla enyukliya.

Imilinganiselo yobugcisa:

Inkcazo	Iinkcukacha
Imilinganiselo (L × W × H)	2500 × 2400 × 3456 mm okanye wenze ngokwezifiso
I-Crucible Diameter	900 mm
Uxinzelelo olugqibeleleyo lweVacuum	6 × 10⁻⁴ Pa (emva kwe-1.5h yevacuum)
Ireyithi yokuvuza	≤5 Pa/12h (ukubhaka ngaphandle)
Ukujikeleza kweShaft Diameter	50 mm
Isantya sokujikeleza	0.5-5 rpm
Indlela yokufudumeza	Ukufudumeza ukuxhathisa kombane
Ubushushu obuphezulu beSiko	2500°C
Amandla okufudumeza	40 kW × 2 × 20 kW
Umlinganiselo wobushushu	Ipyrometer ye-infrared enemibala emibini
Uluhlu lobushushu	900–3000°C
Ukuchaneka kobushushu	±1°C
Uluhlu loxinzelelo	1–700 mbar
Ukuchaneka koLawulo loxinzelelo	1–10 mbar: ± 0.5% FS; 10–100 mbar: ± 0.5% FS; 100–700 mbar: ±0.5% FS
Uhlobo lokuSebenza	Ukulayishwa okuphantsi, iinketho zokhuseleko lwe-manual / oluzenzekelayo
Iimpawu ozikhethayo	Umlinganiselo wobushushu ophindwe kabini, iindawo ezininzi zokufudumeza

Iinkonzo ze-XKH:

I-XKH ibonelela ngenkonzo yenkqubo yonke yeSiC PVT eziko, kubandakanywa ukulungiswa kwezixhobo (uyilo lwentsimi ye-thermal, ulawulo oluzenzekelayo), uphuhliso lwenkqubo (ukulawulwa kwemilo yekristale, ukulungiswa kwesiphako), uqeqesho lobugcisa (ukusebenza kunye nokugcinwa) kunye nenkxaso emva kokuthengisa (ukutshintshwa kweengxenye zegraphite, ukulinganisa intsimi ye-thermal) ukunceda abathengi bafezekise umgangatho ophezulu wemveliso ye-crystal ye-sic. Sikwabonelela ngeenkonzo zokuphucula inkqubo yokuphucula ngokuqhubekayo isivuno sekristale kunye nokusebenza kakuhle kokukhula, kunye nexesha eliqhelekileyo lokukhokelela kwiinyanga ezi-3-6.