Itreyi ye-ceramic ye-silicon carbide sucker Ityhubhu ye-ceramic ye-silicon carbide ibonelela ngokulungiswa kwesiko lobushushu obuphezulu
Iimpawu eziphambili:
1. Itreyi yeseramikhi yesilicon carbide
- Ubunzima obuphezulu kunye nokumelana nokuguguleka: ubunzima bufana nedayimani, kwaye bunokumelana nokuguguleka koomatshini ekucutshungulweni kwe-wafer ixesha elide.
- Ukuqhuba okuphezulu kobushushu kunye nomlinganiselo ophantsi wokwanda kobushushu: ukuchithwa kobushushu ngokukhawuleza kunye nozinzo olulinganayo, kuthintelwa ukuguquguquka okubangelwa luxinzelelo lobushushu.
- Ubuthe tyaba obuphezulu kunye nokugqitywa komphezulu: Ubuthe tyaba bomphezulu bufikelela kwinqanaba le-micron, okuqinisekisa ukudibana ngokupheleleyo phakathi kwe-wafer kunye nediski, okunciphisa ungcoliseko kunye nomonakalo.
Uzinzo lweekhemikhali: Ukumelana nokugqwala okunamandla, okufanelekileyo kwiinkqubo zokucoca ezimanzi kunye nokugqwala kwimveliso ye-semiconductor.
2. Ityhubhu yeseramikhi yesilicon carbide
- Ukumelana nobushushu obuphezulu: Ingasebenza kwindawo enobushushu obuphezulu obungaphezulu kwe-1600°C ixesha elide, ifanelekile kwinkqubo yobushushu obuphezulu be-semiconductor.
Ukumelana nokugqwala okugqwesileyo: ukumelana nee-asidi, ii-alkali kunye neendidi ezahlukeneyo zezinyibilikisi zeekhemikhali, ezifanelekileyo kwiindawo ezinobungozi.
- Ubunzima obuphezulu kunye nokumelana nokuguguleka: ukumelana nokuguguleka kwamasuntswana kunye nokuguguleka koomatshini, yandisa ubomi benkonzo.
- Ukuqhuba okuphezulu kobushushu kunye ne-coefficient ephantsi yokwandiswa kobushushu: ukuqhuba ngokukhawuleza kobushushu kunye nokuzinza kobukhulu, ukunciphisa ukuguquka okanye ukuqhekeka okubangelwa kuxinzelelo lobushushu.
Ipharamitha yeMveliso:
Ipharamitha yetreyi ye-silicon carbide ceramic:
| (Impahla yezinto eziphathekayo) | (Iyunithi) | (i-ssic) | |
| (Umxholo weSiC) | (Ubunzima)% | >99 | |
| (Ubungakanani obuqhelekileyo bengqolowa) | imakroni | 4-10 | |
| (Ubuninzi) | kg/dm3 | >3.14 | |
| (I-porosity ebonakalayo) | I-Vo1% | <0.5 | |
| (Ubulukhuni bukaVickers) | I-HV 0.5 | I-GPa | 28 |
| *() Amandla okugobeka* (amanqaku amathathu) | 20ºC | I-MPa | 450 |
| (Amandla oxinzelelo) | 20ºC | I-MPa | 3900 |
| (Imodulus ye-Elastic) | 20ºC | I-GPa | 420 |
| (Ukuqina kokwaphuka) | I-MPa/m'% | 3.5 | |
| (Ukuqhuba kwe-thermal) | 20°ºC | W/(m*K) | 160 |
| (Ukuxhathisa) | 20°ºC | Ohm.cm | 106-108 |
(I-coefficient yokwandiswa kobushushu) | a(RT**...80ºC) | K-1*10-6 | 4.3 |
(Ubushushu obuphezulu bokusebenza) | oºC | 1700 | |
Ipharamitha yetyhubhu ye-ceramic ye-silicon carbide:
| Izinto | Isalathiso |
| i-α-SIC | 99% umzuzu |
| Ukuqhekeka Okubonakalayo | Ubuninzi be-16% |
| Unizi lolwapho kuyiwa khona | 2.7g/cm3 imizuzu |
| Amandla Okugoba Kubushushu Obuphezulu | 100 Mpa umzuzu |
| Ukwanda kwe-Thermal Coefficient | K-1 4.7x10 -6 |
| I-Coefficient ye-Thermal Conductivity (1400ºC) | 24 W/mk |
| Ubushushu obuphezulu bokusebenza | 1650ºC |
Izicelo eziphambili:
1. Ipleyiti yeseramikhi yesilicon carbide
- Ukusikwa nokupholishwa kwewafer: kusebenza njengeqonga lokuthwala ukuqinisekisa ukuchaneka okuphezulu kunye nozinzo ngexesha lokusikwa nokupholishwa.
- Inkqubo yeLithography: I-wafer iqiniswe kumatshini we-lithography ukuqinisekisa ukuba ibekwe ngokuchanekileyo ngexesha lokuvezwa.
- I-Chemical Mechanical Polishing (CMP): isebenza njengeqonga lokuxhasa ii-pads zokupholisha, inika uxinzelelo olufanayo kunye nokusasazwa kobushushu.
2. Ityhubhu yeseramikhi yesilicon carbide
- Ityhubhu yesithando sobushushu obuphezulu: isetyenziselwa izixhobo zobushushu obuphezulu ezifana nesithando sokusasazwa kunye nesithando soxinzelelo lokuthwala ii-wafers zonyango lwenkqubo yobushushu obuphezulu.
- Inkqubo ye-CVD/PVD: Njengetyhubhu yokuthwala kwindawo yokusabela, ekwaziyo ukumelana namaqondo obushushu aphezulu kunye neegesi ezirhabaxa.
- Izixhobo zezixhobo ze-semiconductor: zezixhobo zokutshintshiselana ubushushu, imibhobho yegesi, njl.njl., ukuphucula ukusebenza kakuhle kolawulo lobushushu lwezixhobo.
I-XKH inikezela ngeenkonzo ezahlukeneyo ezenziwe ngokwezifiso zeetreyi ze-silicon carbide ceramic, iikomityi zokufunxa kunye neetyhubhu ze-silicon carbide ceramic. Iitreyi ze-silicon carbide ceramic kunye neekomityi zokufunxa, i-XKH inokwenziwa ngokwezifiso ngokweemfuno zabathengi zobukhulu obahlukeneyo, iimilo kunye noburhabaxa bomphezulu, kwaye ixhase unyango olukhethekileyo lokugquma, iphucule ukuxhathisa ukuguguleka kunye nokumelana nokugqwala; Kwiityhubhu ze-silicon carbide ceramic, i-XKH inokwenza ngokwezifiso uluhlu olubanzi lobubanzi bangaphakathi, ububanzi bangaphandle, ubude kunye nesakhiwo esintsonkothileyo (njengetyhubhu emile okanye ityhubhu enemingxuma), kwaye ibonelele ngokupholisha, ukugquma okuchasene ne-oxidation kunye nezinye iinkqubo zonyango lomphezulu. I-XKH iqinisekisa ukuba abathengi banokusebenzisa ngokupheleleyo izibonelelo zokusebenza kweemveliso ze-silicon carbide ceramic ukuhlangabezana neemfuno ezifunekayo zamacandelo okuvelisa aphezulu afana nee-semiconductors, ii-LED kunye ne-photovoltaics.
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