I-silicon ye-carbide ye-ceramic tray yokufunxa i-Silicon carbide ityhubhu ye-ceramic ibonelela ngobushushu obuphezulu be-sintering ukusetyenzwa kwesiko

Isilicon carbide ceramic tray sucker Ilicon carbide ceramic ityhubhu inikezela ngobushushu obuphezulu sintering isiko ukusetyenzwa obonakalayo

Inkcazelo emfutshane:

I-silicon carbide i-ceramic tray kunye ne-silicon carbide iityhubhu ze-ceramic zizinto eziyimfuneko ekusebenzeni okuphezulu kwimveliso ye-semiconductor. I-Silicon carbide i-ceramic tray isetyenziswa ikakhulu kwi-wafer processing esisigxina kunye nokuthwala, ukuqinisekisa ukuzinza kwenkqubo echanekileyo ephezulu; Iityhubhu ze-silicon carbide ceramic zisetyenziswa ngokubanzi kwiityhubhu zesithando somlilo esiphakamileyo, iityhubhu zesithando somlilo kunye nezinye iimeko zokumelana nokusingqongileyo okugqithisileyo kunye nokugcina ulawulo olufanelekileyo lobushushu. Zombini zisekwe kwi-silicon carbide njengeyona nto iphambili, eye yaba licandelo eliphambili kwishishini le-semiconductor ngenxa yeempawu zayo ezibalaseleyo zomzimba kunye neekhemikhali.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimpawu eziphambili:

1. I-Silicon carbide i-ceramic tray
- Ubunzima obuphezulu kunye nokumelana nokunxiba: ukuqina kusondele kwidayimane, kwaye kunokumelana nokunxiba ngoomatshini kwi-wafer processing ixesha elide.
- I-conductivity ephezulu ye-thermal kunye ne-coefficient ephantsi yokwandiswa kwe-thermal: ukutshatyalaliswa kobushushu okukhawulezayo kunye nokuzinza kwe-dimensional, ukuphepha ukuguqulwa okubangelwa uxinzelelo lwe-thermal.
- I-flatness ephezulu kunye nokugqitywa komphezulu: I-flatness ye-surface iphezulu kwinqanaba le-micron, iqinisekisa uqhagamshelwano olupheleleyo phakathi kwe-wafer kunye nediski, ukunciphisa ukungcoliswa kunye nomonakalo.
Ukuzinza kweMichiza: Ukuxhathisa okuqinileyo kwe-corrosion, kulungele ukucocwa okumanzi kunye neenkqubo zokubethelwa kwimveliso ye-semiconductor.
2. I-silicon carbide ityhubhu ye-ceramic
- Ukumelana nokushisa okuphezulu: Inokusebenza kwindawo yokushisa ephezulu ngaphezu kwe-1600 ° C ixesha elide, ilungele inkqubo ye-semiconductor ephezulu yokushisa.
Ukumelana nokugqwesa okugqwesileyo: ukumelana ne-acids, i-alkalis kunye neentlobo ezahlukeneyo ze-solvents zamakhemikhali, ezifanelekileyo kwiindawo ezinzima zenkqubo.
-Ubunzima obuphezulu kunye nokumelana nokunxiba: ukuxhathisa ukhukuliseko lwamasuntswana kunye nokunxiba koomatshini, ukwandisa ubomi benkonzo.
- I-conductivity ephezulu ye-thermal kunye ne-coefficient ephantsi yokwandiswa kwe-thermal: ukuqhuba ngokukhawuleza ukushisa kunye nokuzinza kwe-dimensional, ukunciphisa ukuguqulwa okanye ukuqhekeka okubangelwa uxinzelelo lwe-thermal.

Ipharamitha yeMveliso:

Iparamitha yetreyi ye-silicon carbide:

(Impahla yezinto)		(Iyunithi)	(sic)
(Umxholo weSiC)		(Wt)%	>99
(Ubungakanani obuphakathi kweenkozo)		micron	4-10
(Ukuxinana)		kg/dm3	>3.14
(Ibonakala ngathi i-porosity)		Vo1%	<0.5
(Vickers ubulukhuni)	HV 0.5	GPA	28
() Amandla e-Flexural (amanqaku amathathu)	20ºC	MPa	450
(Amandla acinezelayo)	20ºC	MPa	3900
(Elastic Modulus)	20ºC	GPA	420
(Ukuqina kokwaphuka)		MPa/m'%	3.5
(I-Thermal conductivity)	20°C	W/(m*K)	160
(Ukuxhathisa)	20°C	Ohm.cm	106-108
(I-coefficient yokwandisa ubushushu)	a(RT**...80ºC)	K-1*10-6	4.3
(Obona bushushu bokusebenza)		oºC	1700

Ipharamitha yetyhubhu ye-silicon carbide ceramic:

Izinto	Isalathiso
α-SIC	99% imizuzu
I-Porosity ebonakalayo	16% ubukhulu
Unizi lolwapho kuyiwa khona	2.7g/cm3 min
Ukugoba Amandla kubushushu obuphezulu	100 Mpa imiz
I-Coefficient yoKwandiswa kweThermal	K-1 4.7x10 -6
I-Coefficient ye-Thermal Conductivity (1400ºC)	24 W/mk
Max. Ubushushu bokusebenza	1650ºC

Usetyenziso oluphambili:

1. I-silicon carbide ipleyiti ye-ceramic
- I-wafer cut and polishing: isebenza njengeqonga lokuthwala ukuqinisekisa ukuchaneka okuphezulu kunye nokuzinza ngexesha lokusika kunye nokupholisa.
- Inkqubo ye-Lithography: I-wafer igxininiswe kumatshini we-lithography ukuqinisekisa ukuchaneka okuphezulu kokuma ngexesha lokuvezwa.
- I-Chemical Mechanical Polishing (CMP) : isebenza njengeqonga lenkxaso yokupholisa iipads, ukubonelela ngoxinzelelo olufanayo kunye nokusabalalisa ukushisa.
2. I-silicon carbide ityhubhu ye-ceramic
-Ityhubhu yobushushu obuphezulu bobushushu obuphezulu: isetyenziselwa izixhobo zobushushu obuphezulu ezifana nesithando somlilo kunye nesithando se-oxidation ukuthwala ii-wafers kunyango lwenkqubo yobushushu obuphezulu.
- Inkqubo ye-CVD / PVD: Njengombhobho wokuthwala kwigumbi lokuphendula, ukumelana nokushisa okuphezulu kunye neegesi ezidliwayo.
- Izixhobo zezixhobo ze-Semiconductor: kubatshintshi bokushisa, iipayipi zegesi, njl., Ukuphucula ulawulo lwe-thermal lwezixhobo.
I-XKH ibonelela ngoluhlu olupheleleyo lweenkonzo zesiko kwiitreyi ze-silicon carbide ceramic, iikomityi zokufunxa kunye ne-silicon carbide ceramic tubes. Iitreyi ze-silicon carbide ceramic kunye neekomityi zokufunxa, i-XKH inokwenziwa ngokwezifiso ngokuhambelana neemfuno zabathengi zobukhulu obahlukeneyo, iimilo kunye noburhabaxa bomphezulu, kunye nokuxhasa unyango olukhethekileyo lokugquma, ukunyusa ukuxhathisa ukunxiba kunye nokuxhathisa ukubola; Kwiityhubhu ze-silicon carbide ceramic, i-XKH inokwenza ngokwezifiso iintlobo ezahlukeneyo zangaphakathi, ububanzi bangaphandle, ubude kunye nesakhiwo esiyinkimbinkimbi (njenge-tube eqingqiweyo okanye ityhubhu ye-porous), kunye nokubonelela ngepolishi, i-anti-oxidation coating kunye nezinye iinkqubo zonyango lomhlaba. I-XKH iqinisekisa ukuba abathengi banokusebenzisa ngokupheleleyo inzuzo yokusebenza kweemveliso ze-silicon carbide ze-ceramic ukuhlangabezana neemfuno ezifunekayo kwiindawo eziphezulu zokuvelisa ezifana ne-semiconductors, ii-led kunye ne-photovoltaics.