I-selicon carbic tray tray sucker i-carbide ye-carbic ceule ibonelela ngokuqhutywa kwesiko lesiqhelo

I-selicon carbic tray tray sucker ityhubhu ye-Ceramic I-cube ibonelela ngobushushu obuphakathi komfanekiso

Inkcazo emfutshane:

I-Cliicon Carbide Tray kunye ne-Silicon Carbide Tubes i-cebhu ye-Cemiraic zibalulekile kwimveliso ye-semicondcuction. I-selicon carbide itreyi ye-cey isetyenziswa ikakhulu kusetyenziso lwe-wafer oluzinzileyo kunye nokuthathwa, ukuqinisekisa uzinzo lwenkqubo yokuchaneka okuphezulu; Iityhubhu ze-selicon carbic cebhu zisetyenziswa ngokubanzi kwizityholo zamaqondo obushushu amaqondo, amatyhubhu ahluthayo kunye nezinye iimeko zokuzimela iindawo ezixineneyo kwaye zigcine ngokufanelekileyo ulawulo olufanelekileyo. Zombini zisekwe kwi-carbide ye-silicon njengezinto eziphambili, eziye zaba licandelo eliphambili kwimveliso ye-semicondcuctor ngenxa yempahla yayo ebalaseleyo yomzimba kunye neekhemikhali.

Thumela i-imeyile kuthi

Iinkcukacha zemveliso

Iimpawu zeMveliso

Iimpawu eziphambili:

I-1. I-Silicon carbide itreyini ye-cey
-Inzima ephezulu kwaye inxibe ukunganyangeki: Ubunzima busondele kwidayimane, kwaye bunokukhusela ukunxiba ngoomatshini kwiSoft effe ixesha elide.
-Ingcungcutheka ephezulu kakhulu kunye nokwandiswa okuphantsi kwe-thermal of thermal of therms: Ukubekwa kwe-shindo ekhawulezayo kunye nozinzo olubanzi, ukunqanda ukungcungcuthekiswa okubangelwa luxinzelelo lwe-thermal.
-Umgangatho ophezulu kunye nokugqibela komphezulu: Ukucekeswa komphezulu kuxhomekeke kwinqanaba le-micron, ukuqinisekisa unxibelelwano olupheleleyo phakathi kwe-wafer kunye nediski, ukunciphisa ungcoliseko kunye nomonakalo.
Uzinzo lweekhemikhali: Ukunganyangeki kwe-corosion evuthayo, kufanelekile ukuba kucoceke kunye neenkqubo ezimanzi kunye ne-etch etch kwimveliso ye-semicondcuctoure.
I-2. I-Silicon carbide cube
-Ukuxhathisa ubushushu obuphezulu: inokusebenza kwimo yobushushu ephezulu ngaphezulu kwe-1600 ° C ixesha elide, ilungele inkqubo yobushushu be-semiconductor ephezulu.
Ukunganyangeki kweyona nto ixhaphakileyo: Ukuxhathisa ii-AID, i-alkalis kunye neentlobo zezityalo zekhemikhali, ezifanelekileyo kwiindawo ezinobungozi.
-Ukuba nobunzima obukhulu kwaye banxibe ukunganyangeki: Ukuxhathisa ukhukuliseko lwesuntswana kunye nokunxiba koomatshini, kwandisa ubomi benkonzo.
-Ukusebenza okuphezulu kwe-hormal kunye nokusebenza okuphantsi kolwando lwe-thermal: Ukuqhubela okukhawulezayo kobushushu kunye nokuzinza kobushushu kunye nokuzinza kobushushu kunye nokuzinza komgangatho, ukunciphisa ukungcungcutheka okanye ukuqhekeka koxinzelelo.

Ipharamitha yemveliso:

I-selicon carbide ye-ceramic tray:

(Ipropathi yempahla)		(Iyunithi)	(i-SSIC)
(Umxholo we-SIC)		(I-WT)%	> 99
(I-avareji ephakathi)		micron	I-4-10
(Ukuxinana)		kg / dm3	> 3.14
(I-Porosity)		VO1%	<0.5
(I-Viskers)	Hv 0.5	I-GPA	28
* () Amandla e-flexual * (amanqaku amathathu)	20ºc	Mpa	I-450
(Amandla e-comperres)	20ºc	Mpa	3900
(I-elastic modyul)	20ºc	I-GPA	I-420
(Ukuqhekeka kokuqhelisela)		Mpa / m '%	3.5
(Ukuqhutywa kwe-thermal)	I-20 ºC	W / (m * k)	I-160
(Ukuxhathisa)	I-20 ºC	Ohm.cm	I-106-108
(Ukwanda kwe-thermal conder)	A (RT ** ... 80ºC)	K-1 * 10-6	4.3
(Ubushushu obuninzi bokusebenza)		oºc	I-1700

I-Silicon Carbide Ceramic Tuberter parameter:

Izinto	Isalathiso
α-sic	I-99% imiz
I-Perosity	I-16% max
Unizi lolwapho kuyiwa khona	I-2.7G / CM3 min
Ukugoba amandla kubushushu obuphezulu	I-100 mpa min
Ukusebenza kolwando lwe-shirmal	K-1 4.7X10 -6 -6 -6
I-Coandes yokuqhutywa kweMpumelelo (1400ºc)	I-24 w / mk
UMax. Iqondo lokusebenza	I-1650ºc

Izicelo eziphambili:

I-1. I-Silicon carbide platera
- Ukusika i-wacreng kunye nePoling: Ikhonza njengeqonga le-ETLE ukuqinisekisa ukuchaneka okuphezulu kunye nokuzinza ngexesha lokusika kunye nokucoca.
Inkqubo ye-Lithography: I-wafer ilungisiwe kumatshini weliligraphy ukuqinisekisa ukubhengezwa okuphezulu ngexesha lokuvezwa.
-Imichiza ye-chemical cliling (CMP): Izenzo njengeqonga lenkxaso kwiipads zokushicilela, zibonelela ngoxinzelelo olufanayo kunye nokusasazwa kobushushu.
I-2. I-Silicon carbide cube
-I-tube yeqondo lokushisa eliphezulu: esetyenziselwa izixhobo zobushushu eziphezulu ezinjengeziko lokuhlutha kunye nezixhobo ze-oxidation ukuthwala i-wafrs zenkqubo yobushushu obungaphezulu.
-Inkqubo ye-CVD / ye-PVD: Njengomthi onoburharha kwigumbi lokuphendula, elinganyangekiyo kumaqondo obushushu aphezulu kunye neegesi ezonakalisayo.
-Izixhobo ze-semicondcuctor ze-semicondcuctor: kubaphengululi obushushu, imibhobho yegesi, njl njl, ukuphucula ukusebenza ngempumelelo kwekhompyutha.
I-XKH ibonelela ngoluhlu olupheleleyo lweenkonzo ze-selicon carbide trays, iikomityi zecuba kunye ne-silicon carbide tubes. I-selicon carlide itreyi kunye neekomityi zengca, xkh zinokwenziwa ngokwezifiso ngokweemfuno zabathengi zobukhulu obahlukeneyo, iimilo kunye nokuxhasa ukumelana nokunganyangeki kunye nokunganyangeki nokunganyangeki kwendlela yokuziphatha; Kwi-Celicon Carbide tubes, i-XKH inokwenza ngokwezifiso ze-wamer ye-iniometer, i-ofisi ye-Outter, i-tube ye-tube (efana netyhubhu), i-anti-oxidation kunye nezinye iinkqubo zonyango. I-XKH iqinisekisa ukuba abathengi banokusebenzisa ngokupheleleyo izibonelelo zomsebenzi we-selicon carbic carbic ze-ceramic ukuba bahlangabezane neemfuno zokufumana izinto eziphezulu zokuvelisa ezifana ne-semicondtawers, i-LEDVLTIIBS.