Iphedi yeSilicon Carbide Cantilever (iphedi yeSiC Cantilever)

Umfanekiso obonisiweyo weSilicon Carbide Cantilever Paddle (SiC Cantilever Paddle)

Inkcazo emfutshane:

Thumela i-imeyile kuthi

Iimbonakalo

Umzobo oneenkcukacha

Isishwankathelo seMveliso

I-paddle ye-silicon carbide cantilever, eyenziwe nge-high-performance reaction-bonded silicon carbide (RBSiC), yinxalenye ebalulekileyo esetyenziswa kwiinkqubo zokulayisha nokuphatha i-wafer kwiinkqubo ze-semiconductor kunye ne-photovoltaic.
Xa kuthelekiswa nee-quartz okanye ii-graphite paddles zemveli, ii-SiC cantilever paddles zinika amandla aphezulu oomatshini, ubulukhuni obuphezulu, ukwanda okuphantsi kobushushu, kunye nokumelana nokugqwala okubalaseleyo. Zigcina uzinzo oluhle kakhulu kwisakhiwo phantsi kobushushu obuphezulu, zihlangabezana neemfuno ezingqongqo zobukhulu obukhulu be-wafer, ubomi benkonzo ende, kunye nongcoliseko oluphantsi kakhulu.

Ngenxa yophuhliso oluqhubekayo lweenkqubo ze-semiconductor ukuya kwiidayamitha ezinkulu ze-wafer, i-output ephezulu, kunye neendawo zokucubungula ezicocekileyo, ii-paddles ze-SiC cantilever ziye zatshintsha kancinci izinto eziqhelekileyo, zaba lolona khetho lukhethwayo kwii-furniture zokusasaza, i-LPCVD, kunye nezixhobo ezinxulumene nobushushu obuphezulu.

Iimpawu zeMveliso

Uzinzo oluBalaseleyo lobushushu obuphezulu
- Isebenza ngokuthembekileyo kwi-1000–1300℃ ngaphandle kokuguquka.
- Ubushushu obuphezulu benkonzo bufikelela kwi-1380℃.
Umthamo oPhezulu wokuthwala umthwalo
- Amandla okugoba afikelela kwi-250–280 MPa, aphezulu kakhulu kunee-quartz paddles.
- Iyakwazi ukuphatha ii-wafers ezinkulu (300 mm nangaphezulu).
Ubomi beNkonzo eyongeziweyo kunye noLondolozo oluphantsi
- I-coefficient yokwandisa ubushushu ephantsi (4.5 × 10⁻⁶ K⁻¹), ihambelana kakuhle nezinto zokugquma ze-LPCVD.
- Inciphisa imingxunya kunye nokuxobuka okubangelwa luxinzelelo, yandisa kakhulu imijikelo yokucoca kunye nokugcinwa kwayo.
Ukumelana nokugqwala kunye nokucoceka
- Ukumelana kakuhle nee-asidi kunye ne-alkalis.
- Isakhiwo esincinci esineembobo ezivulekileyo <0.1%, nto leyo enciphisa ukuveliswa kweesuntswana kunye nokukhululwa kokungcola.
Uyilo oluhambelana nokuzenzekelayo
- Ijiyometri ezinzileyo enqamlezileyo echanekileyo kakhulu.
- Idibana ngokungenamthungo neenkqubo zokulayisha nokukhupha ii-wafer zerobhothi, nto leyo evumela imveliso ezenzekelayo ngokupheleleyo.

Iipropati zeMvelo nezeKhemikhali

Into	Iyunithi	Idatha
Ubushushu beNkonzo obuphezulu	℃	1380
Uxinano	g/cm³	3.04 – 3.08
I-Porosity evulekileyo	%	< 0.1
Amandla Okugoba	I-MPa	250 (20℃), 280 (1200℃)
Imodulus ye-Elasticity	I-GPa	330 (20℃), 300 (1200℃)
Ukuqhuba kweThermal	W/m·K	45 (1200℃)
I-Coefficient yoKwandiswa koBushushu	K⁻¹×10⁻⁶	4.5
Ubunzima bukaVickers	I-HV2	≥ 2100
Ukumelana ne-Acid/Alkaline	-	Igqwesile

Ubude obuqhelekileyo:2378 mm, 2550 mm, 2660 mm
Ubukhulu obulungiselelweyo buyafumaneka xa uceliwe

Izicelo

Ishishini leSemiconductor
- I-LPCVD (Ukufakwa koMphunga weKhemikhali oXinzelelo oluPhantsi)
- Iinkqubo zokusasazwa (i-phosphorus, i-boron, njl.njl.)
- I-oxidation yobushushu
Ishishini le-Photovoltaic
- Ukusasazeka kunye nokwaleka kwe-polysilicon kunye ne-monocrystalline wafer
- Ukupholisa nokudlulisa ubushushu obuphezulu
Ezinye iiSithili
- Iindawo ezinobungozi ezinobushushu obuphezulu
- Iinkqubo zokuphatha iiwafer ezichanekileyo ezifuna ubomi obude kunye nongcoliseko oluphantsi

Iinzuzo zabathengi

Iindleko Zokusebenza Ezincitshisiweyo– Ubomi obude xa buthelekiswa nee-quartz paddles, nto leyo enciphisa ixesha lokungasebenzi kunye nokuphindaphinda kokutshintshwa.
Imveliso Ephezulu– Ungcoliseko oluphantsi kakhulu luqinisekisa ukucoceka komphezulu we-wafer kwaye kunciphisa amazinga eziphene.
Ubungqina Bekamva– Iyahambelana nobukhulu obukhulu be-wafer kunye neenkqubo ze-semiconductor zesizukulwana esilandelayo.
Imveliso ephuculweyo– Ihambelana ngokupheleleyo neenkqubo ze-robotic automation, ezixhasa ukuveliswa komthamo omkhulu.

Imibuzo Ebuzwa Rhoqo – I-Silicon Carbide Cantilever Paddle

Q1: Yintoni i-paddle ye-silicon carbide cantilever?
A: Yinxalenye yenkxaso kunye nokuphatha ye-wafer eyenziwe nge-reaction-bonded silicon carbide (RBSiC). Isetyenziswa kakhulu kwii-diffusion furnitures, i-LPCVD, kunye nezinye iinkqubo ze-semiconductor kunye ne-photovoltaic ezishushu kakhulu.

Umbuzo 2: Kutheni ukhetha iSiC kunee-quartz paddles?
A: Xa kuthelekiswa nee-quartz paddles, ii-SiC paddles zibonelela:

Amandla aphezulu oomatshini kunye nomthamo wokuthwala umthwalo
Uzinzo olungcono lobushushu kumaqondo obushushu afikelela kwi-1380℃
Ubomi benkonzo obude kakhulu kunye nokunciphisa imijikelo yokugcinwa
Ukuveliswa kweesuntswana okuphantsi kunye nomngcipheko wongcoliseko
Ukuhambelana nobukhulu obukhulu be-wafer (300 mm nangaphezulu)

Umbuzo 3: Zeziphi iisayizi zewafer ezinokuxhaswa yi-SiC cantilever paddle?
A: Iipaddles eziqhelekileyo ziyafumaneka kwiinkqubo ze-furnace ezingama-2378 mm, 2550 mm, kunye ne-2660 mm. Ubukhulu obulungiselelwe wena bufumaneka ukuxhasa ii-wafers ukuya kuthi ga kwi-300 mm nangaphezulu.

Ngathi

I-XKH igxile kuphuhliso lobuchwepheshe obuphezulu, imveliso, kunye nokuthengiswa kweglasi ekhethekileyo ye-optical kunye nezixhobo ezintsha zekristale. Iimveliso zethu zibonelela nge-optical electronics, i-consumer electronics, kunye ne-military. Sinikezela nge-Sapphire optical components, ii-mobile phone lens covers, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kunye ne-semiconductor crystal wafers. Ngobuchule obunobuchule kunye nezixhobo eziphambili, sigqwesile ekucutshungulweni kwemveliso okungaqhelekanga, sijolise ekubeni yishishini eliphambili le-optoelectronic materials high-tech.