Iinkqubo zeNkxaso yeSilicon Carbide Beam yeSilicon Carbide Redefining Kiln
Umzobo oneenkcukacha
Isishwankathelo seMveliso
Imiqadi ye-silicon carbide (SiC) zizinto ze-ceramic eziphucukileyo ezenziwe ngezinto ze-silicon carbide ezicocekileyo kakhulu ngokusebenzisa i-reaction bonding, i-sintering engenaxinzelelo, okanye iinkqubo zokuphinda zenziwe. Eyaziwa ngamandla ayo aphezulu obushushu, ukumelana ne-oxidation, kunye nokumelana nokutshayiswa kobushushu, imiqadi ye-SiC iye yaba zizinto ezithwala umthwalo eziyimfuneko kwii-oven zanamhlanje zoshishino kunye nezixhobo zokucubungula ubushushu.
Kwii-oven zemveli, imiqadi idla ngokwenziwa ngezitena ezirhabaxa okanye izinto ezisekelwe kwi-alumina. Nangona ingabizi kakhulu, imiqadi enjalo iyaguquguquka lula kumaqondo obushushu aphezulu, iguquguquka ngokukhawuleza, kwaye inobomi obufutshane bokusebenza. Ngokwahlukileyo koko, imiqadi ye-SiC inokusebenza ngokuqhubekayo kwi-1380°C–1650°C ngelixa igcina iipropati zoomatshini eziphezulu. Ubomi bayo bokusebenza bubude ngokuphindwe ka-5–10 kunemiqadi yemveli, nto leyo enciphisa kakhulu iindleko zokulungisa, ixesha lokungasebenzi, kunye neendleko zokusebenza zizonke.
Iingenelo eziphambili zokusebenza
Ukumelana nobushushu obuphezulu
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Iyakwazi ukusebenza ixesha elide ngaphezu kwe-1380°C, kunye nezixhobo zeSiC eziphucukileyo ezinyamezela ukuya kuthi ga kwi-1650°C.
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Igcina ulwakhiwo luluqilima phantsi kobushushu obugqithisileyo, ngakumbi ifanelekile kwiindlela ezinkulu zokuthwala umthwalo kwii-tunnel oils nakwii-roller oils.
Iipropati zoMatshini eziPhakamileyo
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Amandla aqhelekileyo okugoba: 250–350 MPa, makhulu ngokuphindwe kaninzi kuneemitha zesiqhelo zokurhawuzelela.
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Ubunzima obuphezulu (Mohs ~ 9.0) buqinisekisa ukumelana nokuguguleka kwexesha elide.
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Ukumelana okuhle kakhulu nokurhubuluza kuthintela ukugoba okanye ukudilika ngexesha lokugcinwa ixesha elide.
Ukumelana nokuShukuma okuKhawulezayo okuBalaseleyo
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Iyamelana nemijikelo yokufudumeza nokupholisa ngokukhawuleza ngaphandle kokuqhekeka.
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Inyamezela ukuguquguquka kwamaqondo obushushu okugqitha i-1000°C, ifanelekile kwii-oven ezisebenza rhoqo xa ziqala ukusebenza.
Ukumelana ne-Oxidation kunye nokuGqwala
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Iyamelana nomoya we-acidic kunye ne-alkaline, kunye neendawo ezikhupha i-oxidizing.
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Kwiqondo lobushushu eliphezulu, iindawo zeSiC zenza umaleko okhuselekileyo weSiO₂, okhusela ngempumelelo kwi-oxidation engaphezulu.
Ilula kwaye Yonga Amandla
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Ubuninzi buqala kwi-2.6–3.1 g/cm³, bukhaphukhaphu kunentsimbi, nto leyo enciphisa umthwalo we-oven.
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Ukuqhuba kakuhle kobushushu kuphucula ukusebenza kakuhle kokudlulisa ubushushu, kunciphisa ukusetyenziswa kwepetroli, kwaye kuqinisekisa ukuba imveliso itsha ngokufanayo.
Ubomi beNkonzo eyongeziweyo
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Ubomi benkonzo eqhelekileyo: iminyaka emi-3–5 nangaphezulu, xa kuthelekiswa neenyanga ezi-6–12 kuphela kwimiqadi eqhelekileyo yokuchasana.
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Ukuncipha kokutshintshwa rhoqo kunciphisa ixesha lokungasebenzi kunye nokugcinwa, okunyusa imveliso.
Iifomu zeMveliso kunye neenkcukacha
Imiqadi yeSiC yenzelwe uqwalaselo oluninzi ukuze ihambelane noyilo lwe-oven eyahlukeneyo kunye neemfuno zokusebenza:
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Imiqadi yentonga ejikelezileyoUbubanzi: Φ30–Φ80 mm; ifanelekile kwii-oven ezikhaphukhaphu kunye neemfuno ezincinci zokuthwala umthwalo.
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Imiqadi yesikwere esiqinileyo: Amacandelo anqamlezileyo aqala kwi-30×30 mm – 100×100 mm; alungele imithwalo enzima kunye nobude obude.
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Isikwere Esingenanto / Iibhanti ze-I: Ilula kwaye inomlinganiselo ophuculiweyo wamandla nobunzima; isetyenziswa kakhulu kwiikilni ezinkulu zetonela kunye neekilni eziqengqelekayo.
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Imiqadi Emilo Eyenzelwe Wena: Yenzelwe ngokwemizobo yabathengi kunye nezakhiwo ze-oven ukuze ihambelane kakhulu.
Ubude obuqhelekileyo: 500 mm – 4500 mm (ubukhulu obude buyafumaneka xa uceliwe).
IiNdawo zeSicelo
1. Ishishini leCeramic
Iibhari ze-silicon carbide (SiC) zisetyenziswa kakhulu kwii-oven zemveliso ye-ceramic, ikakhuluukuthwala umthwalo, inkxaso, kunye nokudluliselwa kobushushu.
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Iiseramikhi ezisetyenziswa imihla ngemihla: izitya, iipleyiti, iikomityi, kunye nezinye izinto ezenziwe ngeporcelain zasekhaya kwii-ovens kunye nee-roller ovens.
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Iiseramikhi zococeko: izindlu zangasese, izitya zokuhlamba, kunye nezinye iimveliso ezinkulu ezifuna amandla okuthwala umthwalo oqinileyo ngexesha lokudubula okushushu ixesha elide.
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Ukwakha iiseramikhi: iithayile zomgangatho, iithayile zodonga, kunye neeslabhu ezinkulu zeseramikhi, apho imiqadi yeSiC iqinisekisa inkxaso ezinzileyo kunye nokufudumeza okufanayo.
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Iiseramikhi zobugcisa/ezakhiweyo: njenge-alumina okanye i-silicon nitride ceramics, ezifuna amaqondo obushushu aphezulu kakhulu kunye nemijikelo emide, nto leyo eyenza ukuba ubomi obude be-SiC beams bubaluleke kakhulu.
2. Ishishini leeglasi
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Ii-oven zeglasi: izakhiwo ezixhasa iibhotile, izitya zeglasi, kunye neglasi ethe tyaba ngexesha lokutsalwa kwe-annealing.
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Ukucoca iglasi: kwimveliso yeglasi ekhethekileyo (iglasi ebonakalayo, iglasi yokubonisa, njl.njl.), imiqadi yeSiC iqinisekisa uzinzo olunemilinganiselo kunye nokudluliselwa kobushushu okufanayo.
Iingenelo: ukungaguquguquki, ukuhanjiswa kobushushu ngokukhawuleza, kunye nokuncipha kweziphene zemveliso ezibangelwa kuxinzelelo olungalinganiyo.
3. Ishishini leMetallurgy kunye nePowder
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Ukucoca ngesinyithi somgubo: iindawo ezakhiweyo ezenziwe ngentsimbi, intsimbi engatyiwayo, kunye nezinye iipowder zesinyithi.
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Izixhobo zemagnethi: iimagnethi ze-ferrite, ezisebenza kwi-1200–1400°C, zifuna imisebe enokumelana nokutsha kobushushu obuphezulu kunye nobomi benkonzo ende.
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Izinto zomhlaba ezingaqhelekanga: ukugcadwa kwee-oxides okanye ii-carbonates ezingaqhelekanga, ngokuqhelekileyo kwiindawo ezixineneyo ze-oven.
Imisebe yeSiC iyamangalisaekumelaneni ne-oxidation kunye nokugqwala, okwenza ukuba zilungele iindawo ezinobungozi zesinyithi.
4. Izixhobo zeKhemikhali kunye nezaMandla amatsha
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I-Catalyst calcination: ii-zeolites, ii-molecular seeves, kunye nee-petroleum catalysts ezitshiswa kwii-ovens zeekhemikhali ezishushu kakhulu.
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Izixhobo ezintsha zamandla:
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Izixhobo ze-cathode zebhetri yeLithium (i-NCM, i-LFP).
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Amandla e-hydrogen kunye nokudubula kwezinto ze-fuel cell.
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Iinzuzo: ukusetyenziswa kwamandla okunciphileyo, ubomi benkonzo obude, kunye nokuphuculwa kokungqinelana kwemveliso.
Ukuthelekisa neeMisebe zeMveli
| Ipropati | I-SiC Beam | Umqadi oQhelekileyo oNgcolisayo |
|---|---|---|
| Ubushushu bokusebenza | 1380–1650°C | ≤1200°C |
| Amandla okuGuquka | 250–350 MPa | 20–40 MPa |
| Ukumelana noTshabalalo oluTshisayo | Igqwesile | Imbi |
| Ubomi beNkonzo | Iminyaka emi-3–5 | Iinyanga ezi-6–12 |
| Ubunzima | Ilula | Inzima |
| Ukusebenza kakuhle kwamandla | Phezulu | Iphantsi |
| Iindleko zoLondolozo | Iphantsi | Phezulu |
Imibuzo Ebuzwa Rhoqo – Iibhanti zeSilicon Carbide
1. Ingakanani iqondo lobushushu lokusebenza eliphezulu leebhanti ze-silicon carbide?
Imiqadi ye-silicon carbide ingasebenza ngokuthembekileyo kwi1380°C–1650°Cngaphandle kokuguquka okukhulu okanye ukulahleka kwamandla. Uluhlu oluchanekileyo luxhomekeke kwinkqubo yokwenziwa (i-reaction-bonded, i-sintered engenaxinzelelo, okanye i-recrystallized SiC).
2. Zithini iingenelo zemisebe yeSiC xa ithelekiswa nemisebe yendabuko enganyangekiyo?
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Amandla aphezulu(amandla okugoba angama-250–350 MPa)
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Ubomi benkonzo ende(ngesiqhelo iminyaka emi-3–5, ubude obuphindwe ka-5–10 kuneemitha zemveli)
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Ubunzima obulula, ukunciphisa umthwalo wolwakhiwo lwe-oven
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Ukumelana okugqwesileyo kobushushu, ifanelekile kwimisebenzi yokuqalisa i-oven rhoqo
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Ukusetyenziswa kwamandla okuphantsi, ukuphucula ukusebenza kakuhle kobushushu
3. Zeziphi iimilo kunye nobukhulu obufumanekayo?
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Imiqadi ejikelezayo: Φ30–Φ80 mm
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Imiqadi yesikwere eqinileyo: 30×30 mm – 100×100 mm
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Isikwere esingenanto / imiqadi ye-I: uyilo olukhaphukhaphu lweendawo ezinkulu
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Imiqadi eyenzelwe wena: yenziwe ngokwemizobo ye-oven kunye neemfuno zayo
Uluhlu lobude: 500–4500 mm (ubungakanani obulungiselelwe wena buyafumaneka).
Ngathi
I-XKH igxile kuphuhliso lobuchwepheshe obuphezulu, imveliso, kunye nokuthengiswa kweglasi ekhethekileyo ye-optical kunye nezixhobo ezintsha zekristale. Iimveliso zethu zibonelela nge-optical electronics, i-consumer electronics, kunye ne-military. Sinikezela nge-Sapphire optical components, ii-mobile phone lens covers, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kunye ne-semiconductor crystal wafers. Ngobuchule obunobuchule kunye nezixhobo eziphambili, sigqwesile ekucutshungulweni kwemveliso okungaqhelekanga, sijolise ekubeni yishishini eliphambili le-optoelectronic materials high-tech.










