SiCOI wafer 4inch 6inch HPSI SiC SiO2 Si subatrate isakhiwo

Inkcazelo emfutshane:

Eli phepha libonisa inkcazo eneenkcukacha ze-Silicon Carbide-on-Insulator (SiCOI) wafers, ngokukodwa kwi-4-intshi kunye ne-6-intshi substrates equkethe i-high-purity semi-insulating (HPSI) i-silicon carbide (SiC) iileya ezidityaniswe kwi-silicon dioxide (SiO₂) i-silicon dioxide substrates (SiO₂) iileyile ze-silicon ezisezantsi (SiO₂). Ulwakhiwo lwe-SiCOI ludibanisa umbane okhethekileyo, i-thermal, kunye ne-mechanical properties ye-SiC kunye neenzuzo zokuzihlukanisa zombane ze-oxide layer kunye nenkxaso yomatshini ye-silicon substrate. Ukusebenzisa i-HPSI SiC kuphucula ukusebenza kwesixhobo ngokunciphisa ukuqhutyelwa kwe-substrate kunye nokunciphisa ilahleko ye-parasitic, ukwenza ezi ziqwenga zilungele ukusetyenziswa kwamandla aphezulu, ama-high-frequency, kunye nobushushu obuphezulu be-semiconductor izicelo. Inkqubo yokwenziwa, iimpawu zezinto eziphathekayo, kunye neenzuzo zesakhiwo solu lungelelwaniso lwe-multilayer luxutyushwa, lugxininisa ukubaluleka kwayo kwisizukulwana esilandelayo sombane wamandla kunye neenkqubo ze-microelectromechanical (MEMS). Uphononongo luphinda luqhathanise iipropati kunye nokusetyenziswa okunokwenzeka kwe-4-intshi kunye ne-6-intshi ye-SiCOI ye-wafers, igqamisa i-scalability kunye namathemba okudibanisa kwizixhobo eziphambili ze-semiconductor.

Thumela i-imeyile kuthi

Iimbonakalo

Ulwakhiwo lweSiCOI wafer

I-HPB (i-High-Performance Bonding) i-BIC (iSekethe eDityanisiweyo eDityanisiweyo) kunye ne-SOD (i-Silicon-on-Diamond okanye iteknoloji efana ne-Silicon-on-Insulator). Ibandakanya:

Iimetriki zokuSebenza:

Udwelisa iiparamitha ezinjengokuchaneka, iindidi zeempazamo (umz., "Akukho mpazamo," "Umgama wexabiso"), kunye nemilinganiselo yobukhulu (umzekelo, "Ubukhulu obuthe ngqo/kg").

Itheyibhile enamaxabiso amanani (mhlawumbi yovavanyo okanye inkqubo yeeparamitha) phantsi kwezihloko ezinjenge "ADDR/SYGBDT," "10/0," njl.

IDatha yoKutyeba koMaleko:

Ungeniso olunabileyo oluphindaphindwayo olubhalwe "L1 Ukutyeba (A)" ukuya ku "L270 Ukutyeba (A)" (kusenokwenzeka ukuba ku-Ångströms, 1 Å = 0.1 nm).

Icebisa ngesakhiwo esinamaleko amaninzi kunye nolawulo lobukhulu obuchanekileyo kumaleko ngamnye, oqhelekileyo kwii-wafers ze-semiconductor eziphambili.

Ulwakhiwo lweSiCOI Wafer

I-SiCOI (i-Silicon Carbide kwi-Insulator) sisakhiwo esikhethekileyo se-wafer esidibanisa i-silicon carbide (i-SiC) kunye ne-insulating layer, efana ne-SOI (i-Silicon-on-Insulator) kodwa ilungiselelwe ukusetyenziswa kwamandla aphezulu / obushushu obuphezulu. Ezona mpawu:

Ukuqulunqwa koMaleko:

Uluhlu oluPhezulu: I-Silicon Carbide enye-crystal (i-SiC) yokuhamba kwe-electron ephezulu kunye nokuzinza kwe-thermal.

I-Insulator engcwatywayo: Ngokuqhelekileyo i-SiO₂ (i-oxide) okanye idayimane (kwi-SOD) ukunciphisa i-parasitic capacitance kunye nokuphucula ukuhlukaniswa.

Isiseko se-Substrate: I-Silicon okanye i-polycrystalline SiC yenkxaso yomatshini

Iipropati zeSiCOI wafer

Iipropati zoMbane I-Bandgap ebanzi (i-3.2 eV ye-4H-SiC): Yenza i-voltage ephezulu yokuphuka (> 10 × ngaphezulu kune-silicon) .Ukunciphisa ukuvuza kwamanzi, ukuphucula ukusebenza kakuhle kwizixhobo zamandla.

UkuHamba kwe-Elektroni ePhezulu:~900 cm²/V·s (4H-SiC) vs. ~1,400 cm²/V·s (Si), kodwa ukusebenza okungcono kwendawo ephezulu.

Ukuxhathisa okuphantsi:Iitransistor ezisekwe kwiSiCOI (umzekelo, iiMOSFET) zibonisa ilahleko yokuqhuba esezantsi.

I-Insulation egqwesileyo:I-oxide engcwatyiweyo (i-SiO₂) okanye i-diamond layer inciphisa i-parasitic capacitance kunye ne-crosstalk.

Iipropati zoThermalHigh Thermal Conductivity:SiC (~490 W/m·K ye-4H-SiC) vs. Si (~150 W/m·K) .Idayimane (ukuba isetyenziswe njengesigqubuthelo) ingadlula i-2,000 W/m·K, iphucula ukuchithwa kobushushu.

Uzinzo lweThermal:Isebenza ngokuthembekileyo kwi->300 ° C (vs. ~ 150 ° C ye-silicon) .Ukunciphisa iimfuno zokupholisa kumbane wamandla.

3. IiPropati zeMechanical & ChemicalUkuqina Okugqithisileyo (~ 9.5 Mohs):Ixhathisa ukunxiba, okwenza iSiCOI yomelele kwiimeko ezingqongileyo.

Ukungangeni kweMichiza:Ixhathisa i-oxidation kunye nokuhlwa, nakwiimeko ze-acidic / alkaline.

Ukwandiswa kobushushu obuphantsi:Ihambelana kakuhle nezinye izixhobo zobushushu obuphezulu (umzekelo, i-GaN).

4. Izinto eziluncedo kwisakhiwo (vs. Bulk SiC okanye SOI)

Ilahleko eNcitshisiweyo yeSubstrate:I-insulating layer ikhusela ukuvuza kwangoku kwi-substrate.

Ukuphuculwa kokuSebenza kweRF:I-Lower parasitic capacitance yenza ukuba utshintshe ngokukhawuleza (uluncedo kwizixhobo ze-5G / mmWave).

Uyilo olubhetyebhetye:I-Thin SiC top layer ivumela ukunyuswa kwesixhobo (umzekelo, i-ultra-thin channels in transistors).

Ukuthelekisa ne-SOI & Bulk SiC

Ipropati	SiCOI	I-SOI (Si/SiO₂/Si)	Ubuninzi beSiC
Ibhendi	3.2 eV (SiC)	1.1 eV (Si)	3.2 eV (SiC)
I-Thermal Conductivity	Phezulu (SiC + diamond)	Phantsi (SiO₂ inciphisa ukuhamba kobushushu)	Phezulu (SiC kuphela)
Ukuqhekeka kweVoltage	Phezulu kakhulu	Phakathi	Phezulu kakhulu
Iindleko	Phezulu	Ngasezantsi	Ephakamileyo (i-SiC esulungekileyo)

izicelo zeSiCOI wafer

I-Electronics yamandla
Ii-wafers ze-SiCOI zisetyenziswa ngokubanzi kwi-high-voltage kunye nezixhobo eziphezulu ze-semiconductor ezifana ne-MOSFET, i-Schottky diode, kunye nokutshintsha kwamandla. I-bandgap ebanzi kunye ne-voltage ephezulu yokuqhekeka kwe-SiC yenza ukuba uguquko lwamandla olusebenzayo lube nelahleko encitshisiweyo kunye nokusebenza okushushu okuphuculweyo.

Izixhobo zeRadio Frequency (RF).
I-insulating layer kwi-wafers ye-SiCOI inciphisa amandla e-parasitic, ibenze bafanelekele ii-transistors eziphezulu-frequency kunye ne-amplifiers ezisetyenziselwa unxibelelwano, i-radar, kunye ne-5G teknoloji.

IiNkqubo zeMicroelectromechanical (MEMS)
Ii-wafers ze-SiCOI zibonelela ngeqonga elomeleleyo lokwenza izinzwa ze-MEMS kunye nee-actuators ezisebenza ngokuthembekileyo kwiindawo ezibuhlungu ngenxa yokungangeni kweekhemikhali ze-SiC kunye namandla omatshini.

I-Electronics yobushushu obuphezulu
I-SiCOI yenza i-electronics igcine ukusebenza kunye nokuthembeka kumaqondo okushisa aphakamileyo, i-automotive, i-aerospace, kunye nokusetyenziswa kwezoshishino apho izixhobo eziqhelekileyo ze-silicon zisilela.

Izixhobo zeFotonic kunye ne-Optoelectronic
Ukuhlanganiswa kweempawu ze-SiC ze-optical kunye ne-insulating layer iququzelela ukuhlanganiswa kweesekethe ze-photonic kunye nolawulo oluphuculweyo lwe-thermal.

I-radiation-Hardened Electronics
Ngenxa yonyamezelo lwemitha ye-SiC, iiwafa ze-SiCOI zilungele indawo kunye nezixhobo zenyukliya ezifuna izixhobo ezimelana neendawo ezinemitha ephezulu.

I-SiCOI wafer's Q&A

Q1: Yintoni i-wafer ye-SiCOI?

A: I-SiCOI imele iSilicon Carbide-on-Insulator. Sisakhiwo se-wafer semiconductor apho umaleko obhityileyo we-silicon carbide (SiC) udityaniswe kwi-insulating layer (ngokuqhelekileyo i-silicon dioxide, i-SiO₂), exhaswa yi-silicon substrate. Esi sakhiwo sidibanisa iipropati ezigqwesileyo ze-SiC kunye nokuhlukaniswa kombane kwi-insulator.

I-Q2: Ziziphi iingenelo eziphambili zee-wafers ze-SiCOI?

A: Ezona zinto ziluncedo zibandakanya ukwehla kwamandla ombane aphezulu, i-bandgap ebanzi, i-thermal conductivity egqwesileyo, ubulukhuni bomatshini obugqwesileyo, kunye nokunciphisa amandla eparasitic enkosi kumaleko wokugquma. Oku kukhokelela ekusebenzeni okuphuculweyo kwesixhobo, ukusebenza kakuhle, kunye nokuthembeka.

Q3: Zeziphi izicelo eziqhelekileyo zeewafers zeSiCOI?

A: Zisetyenziswa kumbane we-electronics, izixhobo zeRF eziphezulu, ii-MEMS sensors, i-electronics yobushushu obuphezulu, izixhobo ze-photonic, kunye ne-electronic-hardened electronics.