I-SiCOI wafer 4inch 6inch HPSI SiC SiO2 Si subatrate isakhiwo

Inkcazo emfutshane:

Eli phepha libonisa isishwankathelo esineenkcukacha zee-wafers zeSilicon Carbide-on-Insulator (SiCOI), ezigxile kakhulu kwii-substrates ezine-intshi ezi-4 kunye ne-intshi ezi-6 ezinee-high-purity semi-insulating layers (HPSI) silicon carbide (SiC) ezibotshelelwe kwii-silicon dioxide (SiO₂) insulating layers phezu kwee-substrates ze-silicon (Si). Ulwakhiwo lwe-SiCOI ludibanisa iipropati zombane, ubushushu, kunye noomatshini zeSiC kunye neenzuzo zokwahlulwa kombane ze-oxide layer kunye nenkxaso yoomatshini ye-silicon substrate. Ukusebenzisa i-HPSI SiC kuphucula ukusebenza kwesixhobo ngokunciphisa ukuqhutywa kwe-substrate kunye nokunciphisa ilahleko ze-parasitic, okwenza ezi wafers zilungele ukusetyenziswa kwe-semiconductor enamandla aphezulu, aphezulu, kunye nobushushu obuphezulu. Inkqubo yokwenziwa, iimpawu zezinto, kunye neengenelo zesakhiwo sale multilayer configuration ziyaxoxwa, zigxininisa ukubaluleka kwayo kwi-electronics yamandla esizukulwana esilandelayo kunye neenkqubo ze-microelectromechanical (MEMS). Olu phononongo lukwathelekisa iipropati kunye nezicelo ezinokubakho zee-wafers zeSiCOI ezine-intshi ezi-4 kunye ne-6-intshi, zigxininisa amathuba okukhula kunye nokuhlanganiswa kwezixhobo ze-semiconductor eziphambili.

Thumela i-imeyile kuthi

Iimbonakalo

Ulwakhiwo lwe-wafer ye-SiCOI

I-HPB (i-High-Performance Bonding) i-BIC (i-Bonded Integrated Circuit) kunye ne-SOD (iteknoloji efana neSilicon-on-Diamond okanye iSilicon-on-Insulator). Iquka:

IiMetriki zoKusebenza:

Udwelisa iiparameter ezinje ngokuchaneka, iintlobo zeempazamo (umz., "Akukho mpazamo," "Umgama wexabiso"), kunye nokulinganiswa kobukhulu (umz., "Ubukhulu obuthe ngqo/kg").

Itheyibhile enexabiso lamanani (mhlawumbi iiparameter zovavanyo okanye zenkqubo) phantsi kwezihloko ezifana ne-"ADDR/SYGBDT," "10/0," njl.

Idatha yoBungqingqwa beLeya:

Iingxelo ezininzi eziphindaphindwayo ezibhalwe "L1 Thickness (A)" ukuya kwi "L270 Thickness (A)" (mhlawumbi kwi-Ångströms, 1 Å = 0.1 nm).

Icebisa ulwakhiwo oluneeleya ezininzi olunolawulo oluchanekileyo lobukhulu beeleya nganye, oluqhelekileyo kwii-wafers ze-semiconductor eziphambili.

Ulwakhiwo lweSiCOI Wafer

I-SiCOI (iSilicon Carbide kwi-Insulator) sisakhiwo esikhethekileyo se-wafer esidibanisa i-silicon carbide (iSiC) kunye nomaleko wokukhusela, ofana ne-SOI (iSilicon-on-Insulator) kodwa elungiselelwe ukusetyenziswa kwamandla aphezulu/ubushushu obuphezulu. Iimpawu eziphambili:

Ulwakhiwo lweLeya:

Umaleko Ophezulu: I-Single-crystal Silicon Carbide (SiC) yokuhambisa ii-electron ezininzi kunye nokuzinza kobushushu.

Isigqubutheli Esingcwatywe Ngaphakathi: Ngokwesiqhelo i-SiO₂ (i-oxide) okanye idayimani (kwi-SOD) ukunciphisa amandla e-parasitic kunye nokuphucula ukuhlukaniswa.

Isiseko sendawo: I-Silicon okanye i-polycrystalline SiC yokuxhasa ngoomatshini

Iipropati ze-SiCOI wafer

Iipropati zoMbane I-Wide Bandgap (3.2 eV ye-4H-SiC): Ivumela i-voltage ephezulu yokuqhekeka (>10× ngaphezulu kune-silicon). Inciphisa imisinga yokuvuza, iphucula ukusebenza kakuhle kwezixhobo zamandla.

Ukuhamba kwe-Electron ephezulu:~900 cm²/V·s (4H-SiC) xa kuthelekiswa ne ~1,400 cm²/V·s (Si), kodwa ukusebenza ngcono kwebala eliphezulu.

Ukumelana okuphantsi:Iitransistors ezisekelwe kwiSiCOI (umz., iiMOSFET) zibonisa ilahleko ephantsi yokuqhuba.

Ubushushu obugqwesileyo:I-oxide efihliweyo (SiO₂) okanye umaleko wedayimani unciphisa amandla e-parasitic kunye ne-crosstalk.

Iipropati zoBushushuUkuqhuba Ubushushu Okuphezulu:SiC (~490 W/m·K kwi-4H-SiC) vs. Si (~150 W/m·K). Idayimani (ukuba isetyenziswa njenge-insulator) ingadlula i-2,000 W/m·K, nto leyo ephucula ukusasazwa kobushushu.

Uzinzo lobushushu:Isebenza ngokuthembekileyo kwi >300°C (xa kuthelekiswa ne ~150°C kwi-silicon). Inciphisa iimfuno zokupholisa kwi-electronics zamandla.

3. Iipropati zoomatshini kunye neekhemikhaliUkuqina Okugqithisileyo (~9.5 Mohs): Iyamelana nokuguguleka, nto leyo eyenza iSiCOI ihlale ixesha elide kwiimeko ezinzima.

Ukungasebenzi kakuhle kweekhemikhali:Iyamelana ne-oxidation kunye nokugqwala, nokuba ikwimeko ye-asidi/i-alkaline.

Ukwanda kobushushu obuphantsi:Ihambelana kakuhle nezinye izinto ezishushu kakhulu (umz., iGaN).

4. Iingenelo zoLwakhiwo (xa kuthelekiswa neBulk SiC okanye iSOI)

Ukulahlekelwa yi-Substrate okuncitshisiweyo:Umaleko wokuvala ubushushu uthintela ukuvuza kwamandla kwi-substrate.

Ukusebenza kweRF okuphuculweyo:Umthamo ophantsi we-parasitic wenza kube lula ukutshintsha ngokukhawuleza (kuluncedo kwizixhobo ze-5G/mmWave).

Uyilo oluguquguqukayo:Umaleko ophezulu we-Thin SiC uvumela ukukalwa kwesixhobo okwenziwe ngcono (umz., iitshaneli ezincinci kakhulu kwii-transistors).

Thelekisa ne-SOI kunye ne-Bulk SiC

Ipropati	I-SiCOI	I-SOI (Si/SiO₂/Si)	I-Bulk SiC
I-Bandgap	3.2 eV (SiC)	1.1 eV (Si)	3.2 eV (SiC)
Ukuqhuba kweThermal	Phezulu (iSiC + idayimani)	Iphantsi (i-SiO₂ ithintela ukuhamba kobushushu)	Iphezulu (iSiC kuphela)
Ukwahlulwa kweVolthi	Phezulu kakhulu	Iphakathi	Phezulu kakhulu
Ixabiso	Phezulu	Ezantsi	Eyona iphezulu (i-SiC ecocekileyo)

Izicelo ze-SiCOI wafer

Amandla e-Elektroniki
Ii-wafer ze-SiCOI zisetyenziswa kakhulu kwizixhobo ze-semiconductor ezine-voltage ephezulu kunye ne-high-power ezifana ne-MOSFET, ii-diode ze-Schottky, kunye neeswitshi zamandla. I-bandgap ebanzi kunye ne-voltage ephezulu ye-breakdown ye-SiC ivumela ukuguqulwa kwamandla okusebenzayo kunye nokulahlekelwa okuncitshisiweyo kunye nokusebenza kobushushu okuphuculweyo.

Izixhobo zeRadio Frequency (RF)
Umaleko wokukhusela kwii-wafers ze-SiCOI unciphisa amandla e-parasitic, nto leyo eyenza ukuba zifaneleke kwii-transistors eziphezulu kunye nee-amplifier ezisetyenziswa kunxibelelwano, kwi-radar, nakwi-teknoloji ye-5G.

Iinkqubo zeMicroelectromechanical (MEMS)
Ii-wafer zeSiCOI zibonelela ngeqonga eliqinileyo lokwenza ii-sensors zeMEMS kunye nee-actuators ezisebenza ngokuthembekileyo kwiindawo ezinzima ngenxa yokungangeni kweekhemikhali zeSiC kunye namandla oomatshini.

Izixhobo ze-elektroniki ezishushu kakhulu
I-SiCOI ivumela izixhobo ze-elektroniki ezigcina ukusebenza kunye nokuthembeka kumaqondo obushushu aphezulu, nto leyo enceda iimoto, i-aerospace, kunye nezicelo zoshishino apho izixhobo ze-silicon eziqhelekileyo zingaphumeleli khona.

Izixhobo zePhotonic kunye ne-Optoelectronic
Ukudityaniswa kweempawu ze-optical ze-SiC kunye nomaleko wokukhusela ubushushu kwenza kube lula ukuhlanganiswa kweesekethe ze-photonic kunye nolawulo oluphuculweyo lobushushu.

Izixhobo zombane eziqinisiweyo ngemitha
Ngenxa yokunyamezelana kwemisebe ye-SiC, ii-wafer ze-SiCOI zilungele ukusetyenziswa kwendawo kunye nenyukliya ezifuna izixhobo ezimelana neendawo ezinemitha ephezulu.

Imibuzo neempendulo zeSiCOI wafer

Umbuzo 1: Yintoni i-wafer ye-SiCOI?

A: I-SiCOI imele iSilicon Carbide-on-Insulator. Sisakhiwo se-semiconductor wafer apho umaleko omncinci we-silicon carbide (SiC) ubotshelelwa kumaleko okhuselayo (ngesiqhelo i-silicon dioxide, i-SiO₂), oxhaswa yi-silicon substrate. Esi sakhiwo sidibanisa iipropati ezibalaseleyo ze-SiC kunye nokwahlulwa kombane kwi-insulator.

Umbuzo 2: Zeziphi iingenelo eziphambili zee-wafers zeSiCOI?

A: Iingenelo eziphambili ziquka i-voltage ephezulu yokuqhekeka, i-wide bandgap, i-thermal conductivity egqwesileyo, ubulukhuni obuphezulu boomatshini, kunye nokunciphisa amandla e-parasitic ngenxa yomaleko wokukhusela. Oku kukhokelela ekusebenzeni ngcono kwesixhobo, ukusebenza kakuhle, kunye nokuthembeka.

Umbuzo 3: Ziziphi iindlela eziqhelekileyo zokusetyenziswa kwee-wafers zeSiCOI?

A: Zisetyenziswa kwii-elektroniki ezinamandla, izixhobo ze-RF ezisebenza rhoqo, ii-sensors ze-MEMS, ii-elektroniki ezisebenza ngobushushu obuphezulu, izixhobo ze-photonic, kunye nee-elektroniki eziqiniswe ngemitha.