I-SiC
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IiWafers zeSiC eziyi-2 intshi eziyi-6H okanye eziyi-4H eziziiSubstrates zeSiC eziziiDiameter eziyi-50.8mm
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IiWafers zeSilicon Carbide eziyi-2 intshi eziyi-6H okanye eziyi-4H N okanye iiSubstrates zeSiC eziNciphisa ubushushu obuphantsi
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I-4H-N 4 intshi ye-SiC substrate wafer yeSilicon Carbide Production Dummy Research grade
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IiWafers zeSiC zeSilicon Carbide eziyi-6 intshi eziyi-150mm eziluhlobo lwe-4H-N zoPhando lweMveliso yeMOS okanye yeSBD kunye nodidi oluyiDummy
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I-8Inch 200mm 4H-N SiC Wafer Udidi lophando oluqhutywayo
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IiWafers zeSilicon Carbide eziyi-2 intshi eziyi-6H okanye eziyi-4H N okanye iiSubstrates zeSiC eziNciphisa ubushushu obuphantsi