I-Sic Substrate Silicon Carbide Wafer 4H-N Uhlobo loBulukhuni obuphezulu bokugqwala Ukumelana nokugqwala kwePrime Grade Polishing

I-Sic Substrate Silicon Carbide Wafer 4H-N Uhlobo loBulukhuni obuphezulu bokuGqwala Ukumelana nokuGqwala Ukulungiswa kwePrime Grade Umfanekiso oFakiweyo

Inkcazo emfutshane:

Iiwafer ze-silicon carbide zizinto ezisebenza kakhulu ezisetyenziswa ekuveliseni izixhobo ze-elektroniki. Zenziwe ngomaleko we-silicon carbide kwi-silicon crystal dome kwaye ziyafumaneka kwiindidi ezahlukeneyo, iintlobo kunye nokugqitywa komphezulu. Iiwafers zinobume obuthe tyaba beLambda/10, obuqinisekisa umgangatho ophezulu kunye nokusebenza kakuhle kwezixhobo ze-elektroniki ezenziwe ngeewafers. Iiwafer ze-silicon carbide zilungele ukusetyenziswa kwi-electronics enamandla, iteknoloji ye-LED kunye neesensors eziphambili. Sinikezela ngeewafer ze-silicon carbide ezikumgangatho ophezulu (sic) kumashishini e-electronics kunye ne-photonics.

Thumela i-imeyile kuthi

Iimbonakalo

Ezi zilandelayo ziimpawu ze-silicon carbide wafer

1. Ukuqhuba okuphezulu kobushushu: Ukuqhuba okuphezulu kobushushu bee-wafer ze-SIC kuphezulu kakhulu kunokwe-silicon, oko kuthetha ukuba ii-wafer ze-SIC zinokususa ubushushu ngempumelelo kwaye zifanelekile ukusebenza kwiindawo ezinobushushu obuphezulu.
2. Ukunyakaza okuphezulu kwee-electron: Ii-SIC wafers zinokuhamba okuphezulu kwee-electron kune-silicon, nto leyo evumela izixhobo ze-SIC ukuba zisebenze ngesantya esiphezulu.
3. I-voltage ephezulu yokuqhekeka: Izinto ze-SIC wafer zine-voltage ephezulu yokuqhekeka, nto leyo eyenza ukuba zifaneleke ukuvelisa izixhobo ze-semiconductor ezine-voltage ephezulu.
4. Uzinzo oluphezulu lweekhemikhali: Ii-SIC wafers zinokumelana nokugqwala okunamandla kweekhemikhali, nto leyo enceda ukuphucula ukuthembeka nokuqina kwesixhobo.
5. Umsantsa webhendi ebanzi: Ii-SIC wafers zine-band gap ebanzi kune-silicon, nto leyo eyenza izixhobo ze-SIC zibe ngcono kwaye zizinzile ngakumbi kumaqondo obushushu aphezulu.

I-silicon carbide wafer inezicelo ezininzi

1. Intsimi yoomatshini: izixhobo zokusika kunye nezinto zokugaya; Iindawo kunye neebhushi ezingagugiyo; Iivalvu kunye nezitywino zemizi-mveliso; Iibheringi kunye neebhola
2. Intsimi yamandla e-elektroniki: izixhobo ze-semiconductor zamandla; Into ye-microwave ephindaphindayo; I-voltage ephezulu kunye namandla e-elektroniki obushushu obuphezulu; Izixhobo zolawulo lobushushu
3. Ishishini leekhemikhali: i-reactor yeekhemikhali kunye nezixhobo; Iipayipi ezimelana nokugqwala kunye neetanki zokugcina; Inkxaso ye-catalyst yeekhemikhali
4. Icandelo lamandla: iinxalenye ze-turbine yegesi kunye ne-turbocharger; iinxalenye zamandla enyukliya kunye nezakhiwo ezikumgangatho ophezulu iinxalenye zeeseli zamafutha
5. I-Aerospace: iinkqubo zokukhusela ubushushu bee-missile kunye nezithuthi zasemoyeni; Iiblade ze-turbine ze-Jet engine; I-composite ephucukileyo
6.Ezinye iindawo: Izinzwa zobushushu obuphezulu kunye nee-thermopiles; Iidiye kunye nezixhobo zenkqubo yokusila; Ukusila nokupolisha kunye nokusika amasimi
I-ZMKJ can ibonelela nge-wafer ye-SiC yekristale enye ekumgangatho ophezulu (iSilicon Carbide) kushishino lwe-elektroniki kunye ne-optoelectronic. I-SiC wafer sisixhobo se-semiconductor sesizukulwana esilandelayo, esineempawu zombane ezikhethekileyo kunye neempawu zobushushu ezibalaseleyo, xa kuthelekiswa ne-silicon wafer kunye ne-GaAs wafer, i-SiC wafer ifanelekile ngakumbi kwizixhobo ezishushu kakhulu kunye nosetyenziso lwamandla aphezulu. I-SiC wafer inganikezelwa ngobubanzi obuyi-2-6 intshi, zombini i-4H kunye ne-6H SiC, uhlobo lwe-N, i-nitrogen doped, kunye nohlobo lwe-semi-insulating olufumanekayo. Nceda unxibelelane nathi ukuze ufumane ulwazi oluthe kratya ngemveliso.
Umzi-mveliso wethu unezixhobo zemveliso eziphambili kunye neqela lobuchwephesha, elinokwenza ngokwezifiso iinkcukacha ezahlukeneyo, ubukhulu kunye neemilo ze-wafer ye-SiC ngokweemfuno ezithile zabathengi.