I-SiC substrate P kunye ne-D grade Dia50mm 4H-N 2inch

Iimpawu eziphambili zee-wafers ze-2inch SiC mosfet zezi zilandelayo;.

Ukuqhuba okuphezulu kobushushu: Ukuqinisekisa ulawulo olusebenzayo lobushushu, ukuphucula ukuthembeka kwesixhobo kunye nokusebenza kwaso

UkuHamba kwe-Electron ephezulu: Ivumela ukutshintshela kwi-elektroniki ngesantya esiphezulu, ifanelekile kwizicelo ze-frequency ephezulu

Uzinzo lweeKhemikhali: Igcina ukusebenza phantsi kweemeko ezinzima ubomi besixhobo

Ukuhambelana: Iyahambelana nokuhlanganiswa kwe-semiconductor ekhoyo kunye nemveliso enkulu

Ii-wafer ze-SiC mosfet eziyi-2 intshi, 3 intshi, 4 intshi, 6 intshi, 8 intshi zisetyenziswa kakhulu kwezi ndawo zilandelayo: iimodyuli zamandla kwizithuthi zombane, ezibonelela ngeenkqubo zamandla ezizinzileyo nezisebenzayo, iinkqubo zamandla avuselelekayo ezihlaselayo, ukuphucula ulawulo lwamandla kunye nokusebenza kakuhle kokuguqulwa kwamandla,

I-SiC wafer kunye ne-Epi-layer wafer ze-elektroniki zesathelayithi kunye ne-aerospace, ukuqinisekisa unxibelelwano oluthembekileyo olusebenzisa i-high frequency.

Usetyenziso lwe-Optoelectronic lwee-laser kunye nee-LED ezisebenza kakuhle, ezihlangabezana neemfuno zobuchwephesha bokukhanyisa obuphambili kunye nobokubonisa.

Ii-substrates zethu ze-SiC wafers zeSiC zezona zilungileyo kwii-electronics zamandla kunye nezixhobo ze-RF, ingakumbi apho kufuneka ukuthembeka okuphezulu kunye nokusebenza okugqwesileyo. Ibhetshi nganye yee-wafers ivavanywa ngokungqongqo ukuqinisekisa ukuba ziyahlangabezana nemigangatho ephezulu yomgangatho.

Iiwafer zethu zeSiC ze-2inch, 3inch, 4inch, 6inch, 8inch 4H-N uhlobo lwe-D-grade kunye ne-P-grade zezona zikhetho zifanelekileyo kwizicelo ze-semiconductor ezisebenza kakuhle. Ngomgangatho ogqwesileyo wekristale, ulawulo olungqongqo lomgangatho, iinkonzo zokwenza ngokwezifiso, kunye noluhlu olubanzi lwezicelo, singalungiselela ukwenza ngokwezifiso ngokweemfuno zakho. Imibuzo yamkelekile!