I-SiC substrate ye-P kunye ne-D ibakala i-Dia50mm 4H-N 2inch

I-SiC substrate P kunye ne-D grade Dia50mm 4H-N 2inch Umfanekiso obonakalayo

Inkcazelo emfutshane:

I-Silicon carbide (i-SiC) yimbumba yokubini yeqela le-IV-IV, yimathiriyeli ye-semiconductor.yenziwe ngesilicon ecocekileyo kunye nekhabhoni ecocekileyo. I-nitrogen okanye i-phosphorus inokufakwa kwi-SIC ukwenza i-n-type semiconductors, okanye i-beryllium, i-aluminiyam, okanye i-gallium inokujongwa ukwenza i-p-type semiconductors. Inomgangatho ophezulu we-thermal conductivity, ukuhamba kwe-electron ephezulu, amandla ombane aphezulu, ukuzinza kweekhemikhali, kunye nokuhambelana, ukuqinisekisa ulawulo olululo lwe-thermal, ukuqinisa ukuthembeka kwesixhobo kunye nokusebenza, okwenza ukuba utshintsho lwe-elektroniki olunesantya esiphezulu lulungele ukusetyenziswa kwe-high-frequency izicelo, kunye nokugcina ukusebenza phantsi kweemeko ezinzima. ukwandisa ubomi besixhobo.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iimpawu eziphambili ze-2inch SiC mosfet wafers zilandelayo;.

I-High Thermal Conductivity: Iqinisekisa ulawulo olululo lwe-thermal, iphucula ukuthembeka kwesixhobo kunye nokusebenza

Ukuhamba kwe-Electron ephezulu: Ivumela ukutshintshwa kwe-elektroniki ngesantya esiphezulu, kulungele ukusetyenziswa kwe-high-frequency applications.

Uzinzo lweMichiza: Igcina ukusebenza phantsi kweemeko ezinzima ubomi besixhobo

Ukuhambelana: Iyahambelana nokuhlanganiswa kwe-semiconductor ekhoyo kunye nemveliso yobuninzi

I-2inch, 3inch, 4inch, 6inch, 8inch SiC mosfet wafers zisetyenziswa ngokubanzi kwezi ndawo zilandelayo: iimodyuli zamandla kwizithuthi zombane,ukubonelela ngeenkqubo zamandla ezizinzileyo nezisebenzayo,iinverters zeenkqubo zamandla avuselelekayo, ukwandisa ulawulo lwamandla kunye nokusebenza kakuhle koguqulo,

I-SiC wafer kunye ne-Epi-layer wafer ye-satellite kunye ne-aerospace electronics, iqinisekisa unxibelelwano oluthembekileyo lwe-frequency ephezulu.

Izicelo ze-Optoelectronic ze-laser ezisebenza kakhulu kunye nee-LED, ukuhlangabezana neemfuno zokukhanya okuphambili kunye nobuchwepheshe bokubonisa.

Ii-wafers zethu ze-SiC substrates ze-SiC lolona khetho lufanelekileyo kumbane wamandla kunye nezixhobo ze-RF, ngakumbi apho ukuthembeka okuphezulu kunye nokusebenza okukhethekileyo kufuneka. Ibhetshi nganye yeewafers ivavanywa ngokuqatha ukuqinisekisa ukuba iyahlangabezana neyona migangatho iphezulu yomgangatho.

I-2inch, 3inch, 4inch, 6inch, 8inch 4H-N uhlobo lwe-D-grade kunye ne-P-grade SiC wafers lukhetho olugqibeleleyo kwizicelo eziphezulu ze-semiconductor. Ngomgangatho okhethekileyo wekristale, ulawulo olungqongqo lomgangatho, iinkonzo zokwenza ngokwezifiso, kunye noluhlu olubanzi lwezicelo, sinokulungiselela ukwenza ngokwezifiso ngokweemfuno zakho. Imibuzo yamkelekile!