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I-SiC substrate Dia200mm 4H-N kunye ne-HPSI Silicon carbide

Umfanekiso ocacileyo we-SiC substrate Dia200mm 4H-N kunye ne-HPSI Silicon carbide
  • I-SiC substrate Dia200mm 4H-N kunye ne-HPSI Silicon carbide
  • I-SiC substrate Dia200mm 4H-N kunye ne-HPSI Silicon carbide
  • I-SiC substrate Dia200mm 4H-N kunye ne-HPSI Silicon carbide

Inkcazo emfutshane:

I-silicon carbide substrate (i-SiC wafer) sisixhobo se-semiconductor esine-bandgap ebanzi esineempawu ezintle zomzimba nezekhemikhali, ngakumbi kwiindawo ezinobushushu obuphezulu, eziphindaphindayo, ezinamandla aphezulu, kunye neendawo ezinemitha ephezulu. I-4H-V yenye yezakhiwo zekristale ze-silicon carbide. Ukongeza, ii-SiC substrates zine-thermal conductivity entle, oko kuthetha ukuba zinokususa ngempumelelo ubushushu obuveliswa zizixhobo ngexesha lokusebenza, nto leyo ephucula ngakumbi ukuthembeka kunye nobomi bezixhobo.


Iimbonakalo

I-4H-N kunye ne-HPSI yi-polytype ye-silicon carbide (i-SiC), enesakhiwo se-crystal lattice esineeyunithi ezine-hexagonal ezenziwe ngee-athomu ezine ze-carbon kunye ne-silicon ezine. Esi sakhiwo sinika le nto iimpawu ze-electron mobility kunye ne-breakdown voltage ezigqwesileyo. Phakathi kwazo zonke ii-polytype ze-SiC, i-4H-N kunye ne-HPSI zisetyenziswa kakhulu kwicandelo le-electronics yamandla ngenxa yokulinganisela kwayo i-electron kunye ne-hole mobility kunye ne-thermal conductivity ephezulu.

Ukuvela kwe-8inch SiC substrates kubonisa inkqubela phambili ebalulekileyo kushishino lwe-power semiconductor. Izixhobo ze-semiconductor zemveli ezisekwe kwi-silicon zifumana ukwehla okukhulu ekusebenzeni phantsi kweemeko ezinzima ezifana namaqondo obushushu aphezulu kunye ne-voltage ephezulu, ngelixa ii-SiC substrates zinokugcina ukusebenza kwazo okugqwesileyo. Xa kuthelekiswa nee-substrates ezincinci, ii-8inch SiC substrates zibonelela ngendawo enkulu yokucubungula eneqhekeza elinye, nto leyo ethetha ukusebenza kakuhle kwemveliso kunye neendleko eziphantsi, ezibalulekileyo ekuqhubeni inkqubo yorhwebo lwetekhnoloji yeSiC.

Itekhnoloji yokukhula kwe-8inch silicon carbide (SiC) substrates ifuna ukuchaneka okuphezulu kakhulu kunye nobunyulu. Umgangatho we-substrate uchaphazela ngokuthe ngqo ukusebenza kwezixhobo ezilandelayo, ngoko ke abavelisi kufuneka basebenzise ubuchwepheshe obuphambili ukuqinisekisa ukugqibelela kwekristale kunye noxinano oluphantsi lwesiphene se-substrates. Oku kudla ngokubandakanya iinkqubo ezintsonkothileyo ze-chemical vapor deposition (CVD) kunye neendlela ezichanekileyo zokukhula kwekristale kunye nokusika. I-4H-N kunye ne-HPSI SiC substrates zisetyenziswa kakhulu kwicandelo le-electronics yamandla, njengakwii-converters zamandla ezisebenzayo, ii-traction inverters zezithuthi zombane, kunye neenkqubo zamandla avuselelekayo.

Singabonelela nge-4H-N 8inch SiC substrate, iintlobo ezahlukeneyo zee-wafers zesitokhwe se-substrate. Singalungiselela nokwenza ngokwezifiso ngokweemfuno zakho. Wamkelekile umbuzo!

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