I-substrate ye-SiC i-Dia200mm 4H-N kunye ne-HPSI Silicon carbide

Inkcazelo emfutshane:

I-Silicon carbide substrate (i-SiC wafer) yinto ebanzi-bandgap semiconductor imathiriyeli eneempawu ezibalaseleyo zomzimba kunye neekhemikhali, ngakumbi ezibalaseleyo kubushushu obuphezulu, i-high-frequency, high-power, kunye ne-high-radiation environments. I-4H-V yenye yezakhiwo ze-crystalline ze-silicon carbide. Ukongezelela, ii-substrates ze-SiC zine-conductivity efanelekileyo ye-thermal, oku kuthetha ukuba banokutshabalalisa ngokufanelekileyo ukushisa okwenziwa zizixhobo ngexesha lokusebenza, ukuphucula ngakumbi ukuthembeka kunye nokuphila kwezixhobo.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

I-4H-N kunye ne-HPSI i-polytype ye-silicon carbide (i-SiC), ene-crystal lattice structure equkethe iiyunithi ze-hexagonal ezenziwe ngee-carbon ezine kunye ne-athomu ezine ze-silicon. Esi sakhiwo sinika imathiriyeli ngokuhamba kakuhle kwe-electron kunye neempawu zombane wokuqhekeka. Phakathi kwazo zonke ii-polytypes ze-SiC, i-4H-N kunye ne-HPSI isetyenziswa ngokubanzi kwintsimi ye-electronics yamandla ngenxa ye-electron yayo elinganiselayo kunye nokuhamba komngxuma kunye nokuhamba okuphezulu kwe-thermal.

Ukuvela kwe-8inch ye-SiC substrates kubonisa ukuqhubela phambili okubonakalayo kwishishini le-semiconductor yamandla. Izinto ze-silicon-based semiconductor zemveli zifumana ukuhla okukhulu ekusebenzeni phantsi kweemeko ezigqithisileyo ezinje ngamaqondo obushushu aphezulu kunye nombane ophezulu, ngelixa ii-substrates ze-SiC zinokugcina ukusebenza kwazo okugqwesileyo. Xa kuthelekiswa nee-substrates ezincinci, i-8inch SiC substrates ibonelela ngendawo enkulu yokusetyenzwa kweqhekeza elinye, eliguqulela ekusebenzeni okuphezulu kwemveliso kunye neendleko eziphantsi, okubalulekileyo ekuqhubeni inkqubo yorhwebo yetekhnoloji yeSiC.

Itekhnoloji yokukhula ye-8inch silicon carbide (SiC) substrates ifuna ukuchaneka okuphezulu kakhulu kunye nobunyulu. Umgangatho we-substrate uchaphazela ngokuthe ngqo ukusebenza kwezixhobo ezilandelayo, ngoko ke abavelisi kufuneka basebenzise ubugcisa obuphezulu bokuqinisekisa ukugqibelela kwekristale kunye nokuxinana kwesiphako esisezantsi se-substrates. Oku kubandakanya iinkqubo ezintsonkothileyo zokubeka umphunga (CVD) kunye nokukhula okuchanekileyo kwekristale kunye nobuchule bokusika. I-4H-N kunye ne-HPSI SiC substrates zisetyenziswa ngokubanzi kwintsimi ye-electronics yamandla, njengakwi-high-effective converters power converters, i-traction inverters yezithuthi zombane, kunye neenkqubo zamandla avuselelekayo.

Sinokubonelela nge-4H-N 8inch ye-SiC substrate, amabakala ahlukeneyo e-substrate stock wafers. Singakwazi kwakhona ukulungelelanisa ukwenza ngokweemfuno zakho. Wamkelekile umbuzo!