I-SiC crystal yokukhula iziko iSiC Ingot ikhulisa i-4inch 6inch 8inch PTV Lely TSSG LPE indlela yokukhula

SiC crystal ukukhula eziko SiC Ingot ikhula 4inch 6inch 8inch PTV Lely TSSG LPE indlela yokukhula Umfanekiso obonakalayo

Inkcazelo emfutshane:

I-silicon carbide (i-SiC) ukukhula kwe-crystal yinyathelo eliphambili ekulungiseleleni izinto eziphezulu ze-semiconductor. Ngenxa yeqondo eliphezulu lokunyibilika kweSiC (malunga ne-2700 ° C) kunye nesakhiwo esiyinkimbinkimbi se-polytypic (umz. 4H-SiC, 6H-SiC), iteknoloji yokukhula kwekristale inobunzima obukhulu. Okwangoku, iindlela eziphambili zokukhula ziquka indlela yokudlulisa umphunga womzimba (i-PTV), indlela ye-Lely, indlela yokukhula kwesisombululo sembewu ephezulu (TSSG) kunye ne-liquid phase epitaxy method (LPE). Indlela nganye ineenzuzo zayo kunye nokungona kwayo kwaye ifanelekile kwiimfuno ezahlukeneyo zesicelo.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iindlela eziphambili zokukhula kwekristale kunye neempawu zazo

(1) Indlela yokuTshintshela uMphunga woMzimba (PTV)
Umgaqo: Kwiqondo lokushisa eliphezulu, i-SiC ye-raw material i-sublimes kwisigaba segesi, ethi emva koko ihlaziywe kwikristale yembewu.
Iimpawu eziphambili:
Ubushushu bokukhula okuphezulu (2000-2500 ° C).
Umgangatho ophezulu, ubukhulu obukhulu be-4H-SiC kunye ne-6H-SiC crystals inokukhuliswa.
Izinga lokukhula licotha, kodwa umgangatho wekristale uphezulu.
Isicelo: Isetyenziswa kakhulu kwi-semiconductor yamandla, izixhobo zeRF kunye nezinye iindawo eziphezulu.

(2) Indlela yeLely
Umgaqo: Iicrystals zikhuliswa ngokuzenzekela kunye nokuphinda kufakwe i-SiC powders kumaqondo aphezulu.
Iimpawu eziphambili:
Inkqubo yokukhula ayifuni imbewu, kwaye ubukhulu bekristale buncinci.
Umgangatho we-crystal uphezulu, kodwa ukukhula okusebenzayo kuphantsi.
Ilungele uphando lwebhubhoratri kunye nemveliso encinci yebhetshi.
Isicelo: Isetyenziswa kakhulu kuphando lwezenzululwazi kunye nokulungiswa kweekristale zeSiC ezincinci.

(3) Indlela yokukhula kwesisombululo seMbewu ePhezulu (TSSG)
Umgaqo: Kwisisombululo esiphezulu sobushushu, izinto eziluhlaza ze-SiC zinyibilika kwaye zikhazimle kwikristale yembewu.
Iimpawu eziphambili:
Ubushushu bokukhula buphantsi (1500-1800 ° C).
Umgangatho ophezulu, isiphene esisezantsi iikristale zeSiC zinokukhuliswa.
Izinga lokukhula licotha, kodwa ukufana kwekristale kulungile.
Isicelo: Ifanelekile ukulungiselela iikristale zeSiC ezikumgangatho ophezulu, ezifana nezixhobo ze-optoelectronic.

(4) Isigaba solwelo epitaxy (LPE)
Umgaqo: Kwisisombululo sesinyithi se-liquid, i-SiC ekrwada ukukhula kwe-epitaxial kwi-substrate.
Iimpawu eziphambili:
Ubushushu bokukhula buphantsi (1000-1500 ° C).
Isantya sokukhula ngokukhawuleza, esilungele ukukhula kwefilimu.
Umgangatho wekristale uphezulu, kodwa ubukhulu bulinganiselwe.
Isicelo: Isetyenziswa kakhulu ekukhuleni kwe-epitaxial yeefilimu ze-SiC, ezifana ne-sensor kunye nezixhobo ze-optoelectronic.

Iindlela eziphambili zesicelo se-silicon carbide crystal furnace

I-SiC crystal furnace sesona sixhobo siphambili sokulungiselela iikristale ze-sic, kwaye iindlela zayo zokusebenza eziphambili ziquka:
Ukwenziwa kwesixhobo se-semiconductor yamandla: Isetyenziselwa ukukhulisa umgangatho ophezulu we-4H-SiC kunye ne-6H-SiC iikristale njengezinto ezincinci zezixhobo zamandla (ezifana ne-MOSFETs, diode).
Izicelo: izithuthi zombane, i-photovoltaic inverters, izixhobo zombane zamashishini, njl.

Ukwenziwa kwesixhobo se-Rf: Isetyenziselwa ukukhulisa iikristale ze-SiC ezinesiphako esisezantsi njengee-substrates zezixhobo ze-RF ukuhlangabezana neemfuno eziphezulu ze-5G zonxibelelwano, i-radar kunye ne-satellite yonxibelelwano.

Ukwenziwa kwesixhobo se-Optoelectronic: Isetyenziselwa ukukhulisa iikristale zeSiC ezikumgangatho ophezulu njengemathiriyeli engaphantsi kweeledi, i-ultraviolet detectors kunye nelases.

Uphando lwezeNzululwazi kunye nokuveliswa kwebhetshi encinci: kuphando lwebhubhoratri kunye nokuphuhliswa kwezinto ezintsha ukuxhasa ukutsha kunye nokuphucula iteknoloji ye-SiC crystal ukukhula.

Ukwenziwa kwesixhobo sobushushu obuphezulu: Isetyenziselwa ukukhulisa iikristale zeSiC ezinobushushu obuphezulu njengesiseko semathiriyeli ye-aerospace kunye nezinzwa zobushushu obuphezulu.

Izixhobo zomlilo zeSiC kunye neenkonzo ezibonelelwa yinkampani

I-XKH igxile kuphuhliso kunye nokuveliswa kwezixhobo ze-SIC crystal furnace, ibonelela ngezi nkonzo zilandelayo:

Izixhobo ezenziwe ngokwezifiso: I-XKH ibonelela ngeziko lokukhula ngokwesiko ngeendlela ezahlukeneyo zokukhula ezifana ne-PTV kunye ne-TSSG ngokweemfuno zabathengi.

Inkxaso yobugcisa: I-XKH ibonelela abathengi ngenkxaso yobugcisa kuyo yonke inkqubo ukusuka ekuphuculweni kwenkqubo yokukhula kwekristale ukuya kulondolozo lwezixhobo.

Iinkonzo zoQeqesho: I-XKH ibonelela ngoqeqesho lokusebenza kunye nesikhokelo sobugcisa kubathengi ukuqinisekisa ukusebenza ngokufanelekileyo kwezixhobo.

Inkonzo emva kokuthengisa: I-XKH inikezela ngenkonzo yokuphendula ngokukhawuleza emva kokuthengisa kunye nokuphuculwa kwezixhobo zokuqinisekisa ukuqhubeka kwemveliso yabathengi.

I-teknoloji ye-silicon carbide crystal ukukhula (efana ne-PTV, i-Lely, i-TSSG, i-LPE) inezicelo ezibalulekileyo kwintsimi yamandla ombane, izixhobo ze-RF kunye ne-optoelectronics. I-XKH ibonelela ngezixhobo zomlilo ze-SiC eziphambili kunye noluhlu olupheleleyo lweenkonzo zokuxhasa abathengi kwimveliso enkulu ye-crystals ye-SiC ephezulu kunye nokunceda ukuphuhliswa kweshishini le-semiconductor.