Isithando sokukhulisa ikristale seSiC Ingot ekhulayo i-4inch 6inch 8inch PTV Lely TSSG LPE indlela yokukhulisa

Inkcazo emfutshane:

Ukukhula kwekristale yeSilicon carbide (SiC) linyathelo elibalulekileyo ekulungiseleleni izixhobo ze-semiconductor ezisebenzayo kakhulu. Ngenxa yeqondo eliphezulu lokunyibilika kweSiC (malunga ne-2700°C) kunye nesakhiwo esiyinkimbinkimbi se-polytypic (umz. 4H-SiC, 6H-SiC), iteknoloji yokukhula kwekristale inobunzima obukhulu. Okwangoku, iindlela eziphambili zokukhula ziquka indlela yokudlulisa umphunga ngokwasemzimbeni (PTV), indlela yeLely, indlela yokukhulisa isisombululo sembewu ephezulu (TSSG) kunye nendlela ye-epitaxy yesigaba solwelo (LPE). Indlela nganye inezibonelelo kunye neengxaki zayo kwaye ifanelekile kwiimfuno ezahlukeneyo zokusetyenziswa.

Thumela i-imeyile kuthi

Iimbonakalo

Iindlela eziphambili zokukhulisa iikristale kunye neempawu zazo

(1) Indlela yokudlulisa umphunga womzimba (PTV)
Umgaqo: Kumaqondo obushushu aphezulu, izinto ezikrwada zeSiC ziyaguquka zibe yigesi, nto leyo ephinda iphindwe kwikristale yembewu.
Iimpawu eziphambili:
Ubushushu obuphezulu bokukhula (2000-2500°C).
Iikristale ze-4H-SiC ezinkulu nezisemgangathweni ophezulu kunye ne-6H-SiC ezinkulu zinokukhuliswa.
Isantya sokukhula sicotha, kodwa umgangatho wekristale uphezulu.
Isicelo: Isetyenziswa kakhulu kwi-power semiconductor, izixhobo ze-RF kunye nezinye iindawo eziphezulu.

(2) Indlela kaLely
Umgaqo: Iikristale zikhuliswa ngokufaka i-sublimation kwi-spontaneous kunye nokuphinda kusetyenziswe iipowder zeSiC kumaqondo obushushu aphezulu.
Iimpawu eziphambili:
Inkqubo yokukhula ayifuni mbewu, kwaye ubukhulu bekristale buncinci.
Umgangatho wekristale uphezulu, kodwa ukusebenza kakuhle kokukhula kuphantsi.
Ifanelekile kuphando lwelabhoratri kunye nemveliso encinci.
Ukusetyenziswa: Isetyenziswa kakhulu kuphando lwesayensi kunye nokulungiselela iikristale zeSiC ezincinci.

(3) Indlela yokukhulisa isisombululo seMbewu ephezulu (TSSG)
Umgaqo: Kwisisombululo sobushushu obuphezulu, izinto eziluhlaza zeSiC ziyanyibilika kwaye ziqine kwikristale yembewu.
Iimpawu eziphambili:
Ubushushu bokukhula buphantsi (1500-1800°C).
Iikristale zeSiC ezikumgangatho ophezulu nezingenasiphako zingakhuliswa.
Isantya sokukhula sicotha, kodwa ukufana kwekristale kulungile.
Ukusetyenziswa: Ifanelekile ukulungiselela iikristale zeSiC ezikumgangatho ophezulu, ezifana nezixhobo ze-optoelectronic.

(4) I-epitaxy yeSigaba soLwelo (i-LPE)
Umgaqo: Kwisisombululo sesinyithi esilulwelo, ukukhula kwe-epitaxial yezinto eziluhlaza ze-SiC kwi-substrate.
Iimpawu eziphambili:
Ubushushu bokukhula buphantsi (1000-1500°C).
Izinga lokukhula ngokukhawuleza, elifanelekileyo lokukhula kwefilimu.
Umgangatho wekristale uphezulu, kodwa ubukhulu bawo bulinganiselwe.
Ukusetyenziswa: Isetyenziswa kakhulu ekukhuleni kweefilimu zeSiC, ezifana neesensors kunye nezixhobo ze-optoelectronic.

Iindlela eziphambili zokusetyenziswa kwesithando se-silicon carbide crystal

Isithando sekristale seSiC sisixhobo esiphambili sokulungiselela iikristale ze-sic, kwaye iindlela zaso eziphambili zokusetyenziswa ziquka:
Ukwenziwa kwezixhobo ze-semiconductor zamandla: Kusetyenziselwa ukukhulisa iikristale ze-4H-SiC kunye ne-6H-SiC ezikumgangatho ophezulu njengezixhobo ze-substrate zezixhobo zamandla (ezifana neeMOSFET, iidiode).
Izicelo: izithuthi zombane, ii-inverters ze-photovoltaic, izixhobo zamandla zoshishino, njl.

Ukwenziwa kwezixhobo ze-RF: Kusetyenziselwa ukukhulisa iikristale ze-SiC ezingenasiphako esiphantsi njengezixhobo zezixhobo ze-RF ukuhlangabezana neemfuno eziphezulu zonxibelelwano lwe-5G, i-radar kunye nonxibelelwano lwesathelayithi.

Ukwenziwa kwezixhobo ze-Optoelectronic: Kusetyenziselwa ukukhulisa iikristale zeSiC ezikumgangatho ophezulu njengezinto ezisetyenziswa kwi-substrate ze-LED, i-ultraviolet detectors kunye ne-laser.

Uphando lwezenzululwazi kunye nemveliso encinci: yophando lwelabhoratri kunye nophuhliso lwezinto ezintsha ukuxhasa ukuveliswa kwezinto ezintsha kunye nokwenza ngcono itekhnoloji yokukhula kwekristale yeSiC.

Ukwenziwa kwezixhobo ezinobushushu obuphezulu: Kusetyenziselwa ukukhulisa iikristale zeSiC ezimelana nobushushu obuphezulu njengezinto ezisisiseko zeesensa zeenqwelo-moya kunye nobushushu obuphezulu.

Izixhobo ze-SiC furnace kunye neenkonzo ezibonelelwa yinkampani

I-XKH igxile kuphuhliso kunye nokuveliswa kwezixhobo ze-SIC crystal furnace, ibonelela ngeenkonzo ezilandelayo:

Izixhobo ezenzelwe wena: I-XKH ibonelela ngee-furnace zokukhulisa ezenzelwe wena ngeendlela ezahlukeneyo zokukhulisa ezifana ne-PTV kunye ne-TSSG ngokweemfuno zabathengi.

Inkxaso yobugcisa: I-XKH inika abathengi inkxaso yobugcisa kuyo yonke inkqubo ukusuka ekuphuculeni inkqubo yokukhula kwekristale ukuya ekugcinweni kwezixhobo.

Iinkonzo zoQeqesho: I-XKH inika abathengi uqeqesho lokusebenza kunye nesikhokelo sobugcisa ukuqinisekisa ukusebenza kakuhle kwezixhobo.

Inkonzo emva kokuthengisa: I-XKH inika inkonzo yokuphendula ngokukhawuleza emva kokuthengisa kunye nokuphucula izixhobo ukuqinisekisa ukuqhubeka kwemveliso yabathengi.

Itekhnoloji yokukhulisa iikristale ze-silicon carbide (ezifana ne-PTV, i-Lely, i-TSSG, i-LPE) inezicelo ezibalulekileyo kwicandelo le-elektroniki yamandla, izixhobo ze-RF kunye ne-optoelectronics. I-XKH ibonelela ngezixhobo ze-SiC furnace eziphambili kunye noluhlu olupheleleyo lweenkonzo zokuxhasa abathengi kwimveliso enkulu yeekristale ze-SiC ezikumgangatho ophezulu kunye nokunceda uphuhliso lweshishini le-semiconductor.