SiC Ingot 4H uhlobo Dia 4inch 6inch Ukutyeba 5-10mm Uphando / Dummy Grade

Inkcazelo emfutshane:

I-Silicon Carbide (i-SiC) iye yavela njengeyona nto ibalulekileyo kwizicelo eziphambili ze-elektroniki kunye ne-optoelectronic ngenxa yombane ophezulu, i-thermal kunye ne-mechanical properties. I-Ingot ye-4H-SiC, ekhoyo kwii-diameters ze-4-intshi kunye ne-6-intshi kunye nobukhulu be-5-10 mm, imveliso yesiseko sophando kunye neenjongo zophuhliso okanye njenge-dummy-grade material. Le ingot yenzelwe ukubonelela abaphandi kunye nabavelisi ngomgangatho ophezulu we-SiC substrates ezifanelekileyo kukwenziwa kwesixhobo somfuziselo, izifundo zovavanyo, okanye ulungelelwaniso kunye neenkqubo zovavanyo. Ngesakhiwo sayo esikhethekileyo sekristale esine-hexagonal, i-ingot ye-4H-SiC ibonelela ngokusetyenziswa okubanzi kumbane wamandla, izixhobo eziphezulu ze-frequency, kunye neenkqubo ezichasene nemitha.

Thumela i-imeyile kuthi

Iinkcukacha zeMveliso

Iithegi zeMveliso

Iipropati

1. Ubume beCrystal kunye nokuqhelaniswa
I-Polytype: 4H (isakhiwo se-hexagonal)
I-Lattice Constants:
a = 3.073 Å
c = 10.053 Å
Uqhelaniso: Ngokwesiqhelo [0001] (C-plane), kodwa ezinye iziqhelaniso ezifana [11\ overline{2}0] (A-plane) nazo ziyafumaneka xa ziceliwe.

2. Ubungakanani bomzimba
Ububanzi:
Iinketho eziqhelekileyo: i-intshi ezi-4 (100 mm) kunye ne-6 intshi (150 mm)
Ukutyeba:
Ifumaneka kuluhlu lwe-5-10 mm, ngokwezifiso ngokuxhomekeke kwiimfuno zesicelo.

3. IiPropati zoMbane
Uhlobo lwe-Doping: Ifumaneka kwi-intrinsic (i-semi-insulating), i-n-type (i-doped nge-nitrogen), okanye i-p-type (i-doped nge-aluminiyam okanye i-boron).

4. IiPropati zeThermal kunye nezoomatshini
I-Thermal Conductivity: 3.5-4.9 W/cm·K kwiqondo lobushushu begumbi, eyenza ukuchithwa kobushushu okugqwesileyo.
Ukuqina: I-Mohs isikali se-9, yenza i-SiC yesibini kuphela kwidayimane ebukhuni.

Ipharamitha	Iinkcukacha	Iyunithi
Indlela Yokukhula	I-PVT (uThutho loMphunga obonakalayo)
Ububanzi	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Iipolytype	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Ukuqhelaniswa nomphezulu	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (abanye)	isidanga
Uhlobo	N-uhlobo
Ukutyeba	5-10 / 10-15 / >15	mm
Ukuqhelaniswa neFlethi okuPhambili	(10-10) ± 5.0˚	isidanga
Ubude beFlethi obuPhambili	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Ukuqhelaniswa neFlethi yesibini	90˚ CCW ukusuka kuqhelaniso ± 5.0˚	isidanga
Ubude beFlethi yesibini	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Akukho (150 mm)	mm
IBanga	Uphando / Dummy

Usetyenziso

1. UPhando kunye noPhuhliso

I-ingot ye-research-grade 4H-SiC ilungele iilebhu zezemfundo kunye nezoshishino ezigxile kuphuhliso lwesixhobo esisekelwe kwi-SiC. Umgangatho wayo ophakamileyo wekristale wenza uvavanyo oluchanekileyo kwiipropathi zeSiC, ezinje:
Izifundo zokushukumiseka kweCarrier.
Ukubonakaliswa kwesiphako kunye neendlela zokunciphisa.
Ukuphuculwa kweenkqubo zokukhula kwe-epitaxial.

2. I-Dummy Substrate
I-ingot ye-dummy-grade isetyenziswa ngokubanzi kuvavanyo, ukulinganisa, kunye nosetyenziso lweprototyping. Yenye indlela eyonga iindleko:
Inkqubo yokulinganisa ipharamitha kwi-Chemical Vapor Deposition (CVD) okanye i-Physical Vapor Deposition (PVD).
Ukuvavanya iinkqubo ze-etching kunye ne-polish kwindawo yokuvelisa.

3. I-Electronics yamandla
Ngenxa ye-bandgap ebanzi kunye ne-thermal conductivity ephezulu, i-4H-SiC lilitye lembombo kumbane wamandla, njengale:
Ii-MOSFET ezinombane ophezulu.
I-Schottky Barrier Diodes (SBDs).
I-Junction Field-Effect Transistors (JFETs).
Izicelo ziquka ii-inverters zemoto yombane, ii-solar inverters, kunye neegridi ezihlakaniphile.

4. IziXhobo ze-High-Frequency
Ukushukuma kwe-electron ephezulu kunye nelahleko ephantsi ye-capacitance iyenza ilungele:
I-Radio Frequency (RF) transistors.
Iinkqubo zonxibelelwano ezingenazintambo, kubandakanywa iziseko ze-5G.
I-Aerospace kunye nezicelo zokukhusela ezifuna iinkqubo ze-radar.

5. Iinkqubo zokuNganyangeki kwemitha
Ukuchasana kwe-4H-SiC yendalo kumonakalo wemitha kuyenza ibaluleke kakhulu kwiindawo ezirhabaxa ezifana:
Izixhobo zokujonga indawo.
Izixhobo zokujonga umzi-mveliso wamandla enyukliya.
Izixhobo ze-elektroniki zodidi lomkhosi.

6. IiTekhnoloji ezisakhulayo
Njengoko itekhnoloji yeSiC iqhubela phambili, izicelo zayo ziyaqhubeka nokukhula zibe ziinkalo ezinje:
Iifotoni kunye nophando lwekhompuyutha yobungakanani.
Ukuphuhliswa kwee-LED eziphezulu kunye ne-UV sensors.
Ukudityaniswa kwi-heterostructures ye-semiconductor ebanzi-bandgap.
Izinto ezilungileyo ze-4H-SiC Ingot
Ukucoceka okuphezulu: Yenziwe phantsi kweemeko ezingqongqo ukunciphisa ukungcola kunye noxinano lwesiphene.
I-Scalability: Ifumaneka kuzo zombini i-4-intshi kunye ne-6-intshi ububanzi ukuxhasa i-industry-standard kunye neemfuno zophando-scali.
I-Versatility: Ilungelelaniswa kwiintlobo ezahlukeneyo ze-doping kunye noqhelaniso ukuhlangabezana neemfuno ezithile zesicelo.
Ukusebenza okuqinileyo: Ukuzinza okuphezulu kwe-thermal kunye nomatshini phantsi kweemeko zokusebenza ezigqithisileyo.

Ukuqukumbela

I-4H-SiC ingot, kunye neempawu zayo ezikhethekileyo kunye nezicelo ezibanzi, zimi phambili kwizinto ezintsha zokuvelisa i-electronics kunye ne-optoelectronics. Nokuba isetyenziselwa uphando lwezifundo, iprototyping yemizi-mveliso, okanye ukwenziwa kwesixhobo esiphucukileyo, ezi ingots zibonelela ngeqonga elithembekileyo lokutyhala imida yetekhnoloji. Ngemilinganiselo enokwenziwa ngokwezifiso, i-doping, kunye nokuqhelaniswa, i-ingot ye-4H-SiC ilungiselelwe ukuhlangabezana neemfuno eziguqukayo zeshishini le-semiconductor.
Ukuba unomdla wokufunda ngakumbi okanye ngokufaka iodolo, nceda uzive ukhululekile ukufikelela kwiinkcukacha ezithe vetshe kunye nothethwano lobugcisa.