Uhlobo lweSiC Ingot 4H Dia 4inch 6inch Ubukhulu 5-10mm Uphando / Udidi oluyiDummy

Uhlobo lweSiC Ingot 4H Dia 4inch 6inch Ubude be-5-10mm Uphando / Udidi oluyiDummy Umfanekiso obonisiweyo

Inkcazo emfutshane:

I-Silicon Carbide (i-SiC) ivele njengesixhobo esibalulekileyo kwizicelo ze-elektroniki kunye ne-optoelectronic eziphambili ngenxa yeempawu zayo eziphezulu zombane, ubushushu, kunye noomatshini. I-4H-SiC Ingot, efumaneka ngobubanzi obuyi-4-intshi kunye ne-6-intshi enobukhulu obuyi-5-10 mm, yimveliso esisiseko yophando kunye nophuhliso okanye njengesixhobo esingeyonyani. Le ingot yenzelwe ukubonelela abaphandi kunye nabavelisi nge-SiC substrates ezikumgangatho ophezulu ezifanelekileyo zokwenza izixhobo zeprototype, izifundo zovavanyo, okanye iinkqubo zokulinganisa kunye nokuvavanya. Ngesakhiwo sayo esikhethekileyo sekristale esinama-hexagonal, i-4H-SiC ingot inikezela ukusetyenziswa okubanzi kwi-electronics enamandla, izixhobo ezinamaza aphezulu, kunye neenkqubo ezichasene nemitha.

Thumela i-imeyile kuthi

Iimbonakalo

Iipropati

1. Ulwakhiwo lwekristale kunye nokuqhelaniswa kwayo
Uhlobo lwePolytype: 4H (isakhiwo esinamacala asibhozo)
IiLattice Constants:
a = 3.073 Å
c = 10.053 Å
Uqhelaniso: Ngokwesiqhelo [0001] (C-plane), kodwa ezinye iindlela ezifana ne [11\overline{2}0] (A-plane) nazo ziyafumaneka xa ziceliwe.

2. Ubukhulu Bomzimba
Ububanzi:
Iinketho eziqhelekileyo: 4 intshi (100 mm) kunye 6 intshi (150 mm)
Ubukhulu:
Ifumaneka kuluhlu lwe-5-10 mm, inokwenziwa ngokwezifiso ngokuxhomekeke kwiimfuno zesicelo.

3. Iipropati zoMbane
Uhlobo lwe-Doping: Ifumaneka kwi-intrinsic (semi-insulating), uhlobo lwe-n (olufakwe i-nitrogen), okanye uhlobo lwe-p (olufakwe i-aluminium okanye i-boron).

4. Iipropati zoBushushu kunye nezobuMechanical
Ukuqhuba kobushushu: 3.5-4.9 W/cm·K kubushushu begumbi, okuvumela ukusasazwa kobushushu okugqwesileyo.
Ubunzima: Isikali seMohs sisi-9, nto leyo eyenza iSiC ibe semva kwedayimani ngobunzima.

Ipharamitha	Iinkcukacha	Iyunithi
Indlela Yokukhula	I-PVT (Uthutho loMphunga oPhilayo)
Ububanzi	50.8 ± 0.5 / 76.2 ± 0.5 / 100.0 ± 0.5 / 150 ± 0.5	mm
Uhlobo lwePolytype	4H / 6H (50.8 mm), 4H (76.2 mm, 100.0 mm, 150 mm)
Ukujongwa komphezulu	0.0˚ / 4.0˚ / 8.0˚ ± 0.5˚ (50.8 mm), 4.0˚ ± 0.5˚ (ezinye)	isidanga
Uhlobo	Uhlobo lwe-N
Ubukhulu	5-10 / 10-15 / >15	mm
Uqhelaniso oluPhambili oluSicaba	(10-10) ± 5.0˚	isidanga
Ubude obuPhambili obuSicaba	15.9 ± 2.0 (50.8 mm), 22.0 ± 3.5 (76.2 mm), 32.5 ± 2.0 (100.0 mm), 47.5 ± 2.5 (150 mm)	mm
Ulwazelelelo lweSibini oluSicaba	90˚ CCW ukusuka kwi-orientation ± 5.0˚	isidanga
Ubude obuSicaba beSibini	8.0 ± 2.0 (50.8 mm), 11.2 ± 2.0 (76.2 mm), 18.0 ± 2.0 (100.0 mm), Akukho (150 mm)	mm
Ibanga	Uphando / Ubudenge

Izicelo

1. Uphando noPhuhliso

Ingot ye-4H-SiC yebanga lophando ifanelekile kwiilebhu zemfundo nakwimizi-mveliso ezigxile kuphuhliso lwezixhobo ezisekelwe kwiSiC. Umgangatho wayo ophezulu wekristale uvumela uvavanyo oluchanekileyo kwiimpawu zeSiC, ezinje:
Izifundo zokuhamba kwenkampani.
Iindlela ezifanelekileyo zokuchaza nokunciphisa iziphene.
Ukuphucula iinkqubo zokukhula kwe-epitaxial.

2. I-Dummy Substrate
I-ingot ye-dummy-grade isetyenziswa kakhulu kuvavanyo, ukulinganisa, kunye nokusetyenziswa kwe-prototyping. Yindlela engabizi kakhulu yokwenza oku kulandelayo:
Ukulinganiswa kweparameter yenkqubo kwiChemical Vapor Deposition (CVD) okanye kwiPhysical Vapor Deposition (PVD).
Ukuvavanya iinkqubo zokugrumba nokupholisha kwiindawo zokuvelisa.

3. Izixhobo zombane zamandla
Ngenxa ye-bandgap yayo ebanzi kunye nokuqhuba okuphezulu kobushushu, i-4H-SiC lilitye lesiseko le-elektroniki yamandla, njenge:
IiMOSFET ezine-voltage ephezulu.
IiDiode zeSchottky Barrier (iiSBD).
Iitransistors zeJunction Field-Effect (iiJFET).
Izicelo ziquka ii-inverters zezithuthi zombane, ii-inverters zelanga, kunye nee-smart grids.

4. Izixhobo ezisetyenziswa rhoqo kakhulu
Ukunyakaza okuphezulu kwee-electron kunye nokulahleka okuncinci kwe-capacitance kwenza ukuba ifaneleke:
Iitransistors zeRadio Frequency (RF).
Iinkqubo zonxibelelwano ezingenazingcingo, kuquka neziseko zophuhliso ze-5G.
Izicelo zeenqwelo-moya nezokhuselo ezifuna iinkqubo zerada.

5. Iinkqubo ezimelana nemisebe
Ukumelana okuqhelekileyo kwe-4H-SiC kumonakalo wemitha kwenza ukuba ibaluleke kakhulu kwiindawo ezinzima ezifana nezi:
Izixhobo zokuhlola isithuba.
Izixhobo zokujonga isikhululo samandla enyukliya.
Izixhobo ze-elektroniki zodidi lomkhosi.

6. Iiteknoloji Ezisakhasayo
Njengoko iteknoloji yeSiC iqhubela phambili, usetyenziso lwayo luyaqhubeka nokukhula lube ngamacandelo anje:
Uphando lwe-Photonics kunye ne-quantum computing.
Uphuhliso lwee-LED ezinamandla aphezulu kunye nee-UV sensors.
Ukuhlanganiswa kwi-heterostructures ze-semiconductor ezibanzi.
Iingenelo ze-4H-SiC Ingot
Ucoceko Oluphezulu: Yenziwe phantsi kweemeko ezingqongqo ukunciphisa ukungcola kunye noxinano lweziphene.
Ubungakanani bokukwazi ukukhulisa: Ifumaneka kwiimitha ezi-4 intshi kunye nezi-6 intshi ukuxhasa iimfuno ezisemgangathweni zoshishino kunye nophando.
Ukuguquguquka: Iyakwazi ukulungelelaniswa neentlobo ezahlukeneyo ze-doping kunye neendlela zokusebenzisa ukuze kuhlangatyezwane neemfuno ezithile zesicelo.
Ukusebenza Okuqinileyo: Uzinzo oluphezulu lobushushu kunye noomatshini phantsi kweemeko zokusebenza ezinzima.

Isiphelo

I-ingot ye-4H-SiC, eneempawu zayo ezibalaseleyo kunye nezicelo ezibanzi, iphambili ekuveliseni izinto ezintsha kwizixhobo ze-elektroniki zesizukulwana esilandelayo kunye ne-optoelectronics. Nokuba isetyenziselwa uphando lwezemfundo, i-prototyping yemizi-mveliso, okanye ukwenziwa kwezixhobo eziphambili, ezi ingots zibonelela ngeqonga elithembekileyo lokutyhala imida yetekhnoloji. Ngobukhulu obunokwenzeka, i-doping, kunye nolwalathiso, i-ingot ye-4H-SiC yenzelwe ukuhlangabezana neemfuno eziguqukayo zoshishino lwe-semiconductor.
Ukuba unomdla wokufunda okungakumbi okanye ukufaka iodolo, nceda uzive ukhululekile ukuqhagamshelana nathi ukuze ufumane iinkcukacha ezineenkcukacha kunye nokubonisana ngobuchule.