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I-SiC Epitaxial Wafer yezixhobo zamandla – 4H-SiC, uhlobo lwe-N, Uxinano oluphantsi lwesiphene

I-SiC Epitaxial Wafer yezixhobo zamandla – 4H-SiC, uhlobo lwe-N, Uxinano oluphantsi lwesiphene Umfanekiso obonisiweyo
  • I-SiC Epitaxial Wafer yezixhobo zamandla – 4H-SiC, uhlobo lwe-N, Uxinano oluphantsi lwesiphene
  • I-SiC Epitaxial Wafer yezixhobo zamandla – 4H-SiC, uhlobo lwe-N, Uxinano oluphantsi lwesiphene
  • I-SiC Epitaxial Wafer yezixhobo zamandla – 4H-SiC, uhlobo lwe-N, Uxinano oluphantsi lwesiphene

Inkcazo emfutshane:

I-SiC Epitaxial Wafer yeyona nto iphambili kwizixhobo ze-semiconductor zanamhlanje ezisebenza kakhulu, ingakumbi ezo zenzelwe ukusebenza ngamandla aphezulu, rhoqo, kunye nobushushu obuphezulu. I-SiC Carbide Epitaxial Wafer, i-SiC Epitaxial Wafer ine-SiC epitaxial layer ekumgangatho ophezulu, ebhityileyo ekhuliswe phezu kwe-SiC substrate enkulu. Ukusetyenziswa kwetekhnoloji ye-SiC Epitaxial Wafer kukhula ngokukhawuleza kwizithuthi zombane, iigridi ezikrelekrele, iinkqubo zamandla avuselelekayo, kunye ne-aerospace ngenxa yeempawu zayo eziphezulu zomzimba neze-elektroniki xa kuthelekiswa nee-wafers zesiqhelo ezisekelwe kwi-silicon.


Iimbonakalo

Umzobo oneenkcukacha

I-SiC Epitaxial Wafer-4
SiC Epitaxial Wafer-6 - 副本

Intshayelelo

I-SiC Epitaxial Wafer yeyona nto iphambili kwizixhobo ze-semiconductor zanamhlanje ezisebenza kakhulu, ingakumbi ezo zenzelwe ukusebenza ngamandla aphezulu, rhoqo, kunye nobushushu obuphezulu. I-SiC Carbide Epitaxial Wafer, i-SiC Epitaxial Wafer ine-SiC epitaxial layer ekumgangatho ophezulu, ebhityileyo ekhuliswe phezu kwe-SiC substrate enkulu. Ukusetyenziswa kwetekhnoloji ye-SiC Epitaxial Wafer kukhula ngokukhawuleza kwizithuthi zombane, iigridi ezikrelekrele, iinkqubo zamandla avuselelekayo, kunye ne-aerospace ngenxa yeempawu zayo eziphezulu zomzimba neze-elektroniki xa kuthelekiswa nee-wafers zesiqhelo ezisekelwe kwi-silicon.

Imigaqo yokwenziwa kweSiC Epitaxial Wafer

Ukudala i-SiC Epitaxial Wafer kufuna inkqubo yokulawula umphunga wekhemikhali (CVD). Umaleko we-epitaxial uhlala ukhuliswa kwi-monocrystalline SiC substrate kusetyenziswa iigesi ezifana ne-silane (SiH₄), i-propane (C₃H₈), kunye ne-hydrogen (H₂) kumaqondo obushushu angaphezulu kwe-1500°C. Olu kukhula kwe-epitaxial kumaqondo obushushu aphezulu luqinisekisa ukulungelelaniswa okuhle kwe-crystalline kunye neziphene ezincinci phakathi komaleko we-epitaxial kunye ne-substrate.

Le nkqubo ibandakanya amanqanaba abalulekileyo aliqela:

  1. Ukulungiswa kweSubstrate: I-wafer ye-SiC esisiseko iyacocwa kwaye ipholishwe ukuze ithambe kakuhle.

  2. Ukukhula kwe-CVD: Kwi-reactor ecocekileyo kakhulu, iigesi ziyasabela xa zidiba umaleko we-SiC one-crystal enye kwi-substrate.

  3. Ulawulo lwe-Doping: Ukufakwa kwe-N-type okanye i-P-type doping kuqaliswa ngexesha le-epitaxy ukuze kufezekiswe iipropati zombane ezifunekayo.

  4. Uhlolo kunye neMetrology: I-optical microscopy, i-AFM, kunye ne-X-ray diffraction zisetyenziselwa ukuqinisekisa ubukhulu beleya, uxinaniso lwe-doping, kunye noxinano lweziphene.

I-SiC Epitaxial Wafer nganye ijongwa ngononophelo ukuze kugcinwe ukunyamezelana okuqinileyo kokufana kobukhulu, ukuthamba komphezulu, kunye nokuchasana. Ukukwazi ukulungisa ezi parameter kubalulekile kwiiMOSFET ezine-voltage ephezulu, ii-Schottky diodes, kunye nezinye izixhobo zamandla.

Inkcazo

Ipharamitha Inkcazo
Iindidi Isayensi yezixhobo, iiSurstrates zekristale enye
Uhlobo lwePolytype 4H
Ukusebenzisa iziyobisi Uhlobo lwe-N
Ububanzi 101 mm
Ukunyamezelana kobubanzi ± 5%
Ubukhulu 0.35 mm
Ukunyamezela Ubukhulu ± 5%
Ubude obuPhambili obuSicaba 22 mm (± 10%)
I-TTV (Utshintsho loBukhulu obupheleleyo) ≤10 µm
I-Warp ≤25 µm
FWHM ≤30 I-Arc-sec
Umphezulu wokugqiba I-Rq ≤0.35 nm

Ukusetyenziswa kweSiC Epitaxial Wafer

Iimveliso zeSiC Epitaxial Wafer zibaluleke kakhulu kumacandelo amaninzi:

  • Izithuthi zoMbane (ii-EV)Izixhobo ezisekelwe kwi-SiC Epitaxial Wafer zonyusa ukusebenza kakuhle kwe-powertrain kwaye zinciphisa ubunzima.

  • Umoya ovuselelekayo: Isetyenziswa kwii-inverters zeenkqubo zamandla elanga nawomoya.

  • Izixhobo zamandla zoshishino: Vumela ukutshintsha okuqhelekileyo, okushushu kakhulu kunye nokulahlekelwa okuphantsi.

  • Inqwelo-moya kunye noKhuselo: Ilungele iindawo ezinzima ezifuna ii-semiconductors eziqinileyo.

  • Izikhululo zesiseko se-5G: Izixhobo zeSiC Epitaxial Wafer zixhasa uxinano lwamandla aphezulu kwizicelo zeRF.

I-SiC Epitaxial Wafer ivumela uyilo oluncinci, ukutshintsha ngokukhawuleza, kunye nokusebenza kakuhle kokuguqula amandla xa kuthelekiswa nee-silicon wafers.

Iingenelo zeSiC Epitaxial Wafer

Itekhnoloji ye-SiC Epitaxial Wafer inikezela ngeenzuzo ezibalulekileyo:

  1. I-Voltage ephezulu yokuphazamiseka: Imelana ne-voltages ukuya kuthi ga kwi-10 ephezulu kune-Si wafers.

  2. Ukuqhuba kweThermal: I-SiC Epitaxial Wafer isusa ubushushu ngokukhawuleza, ivumela izixhobo ukuba zisebenze zipholile kwaye zithembeke ngakumbi.

  3. Izantya zokutshintsha eziphezulu: Ukulahleka okuncinci kokutshintsha kwenza kube lula ukusebenza kakuhle kunye nokunciphisa amandla okusebenzisa.

  4. I-Bandgap ebanzi: Iqinisekisa uzinzo kwiivolthi eziphezulu kunye namaqondo obushushu aphezulu.

  5. Ukuqina kwezinto eziphathekayo: I-SiC ayisebenzi ngokweekhemikhali kwaye inamandla ngokweemishini, ifanelekile ukusetyenziswa ngokungxamisekileyo.

Ezi nzuzo zenza i-SiC Epitaxial Wafer ibe yeyona nto ikhethwayo kwisizukulwana esilandelayo see-semiconductors.

Imibuzo Ebuzwa Rhoqo: I-SiC Epitaxial Wafer

Umbuzo 1: Yintoni umahluko phakathi kwe-SiC wafer kunye ne-SiC Epitaxial Wafer?
I-SiC wafer ibhekisa kwi-bulk substrate, ngelixa i-SiC Epitaxial Wafer ibandakanya umaleko okhuliswe ngokukodwa osetyenziswa ekwenzeni izixhobo.

Q2: Zeziphi iingqiniba ezifumanekayo zeeleya zeSiC Epitaxial Wafer?
Iileya ze-Epitaxial zihlala ziqala kwii-micrometer ezimbalwa ukuya kwi-100 μm, kuxhomekeke kwiimfuno zokusetyenziswa.

Umbuzo 3: Ngaba iSiC Epitaxial Wafer ifanelekile kwiindawo ezinobushushu obuphezulu?
Ewe, iSiC Epitaxial Wafer inokusebenza kwiimeko ezingaphezu kwama-600°C, iphumelela kakhulu kunesilicon.

Umbuzo 4: Kutheni ubuninzi beziphene bubalulekile kwiSiC Epitaxial Wafer?
Uxinano oluphantsi lweziphene luphucula ukusebenza kwesixhobo kunye nokuguquguquka kwaso, ingakumbi kwizicelo ze-voltage ephezulu.

Umbuzo 5: Ngaba iiWafers zeSiC Epitaxial Epitaxial ze-N kunye ne-P-type ziyafumaneka zombini?
Ewe, zombini ezi ntlobo ziveliswa kusetyenziswa ulawulo oluchanekileyo lwegesi ye-dopant ngexesha lenkqubo ye-epitaxial.

Umbuzo 6: Zeziphi iisayizi ze-wafer ezisemgangathweni kwi-SiC Epitaxial Wafer?
Iidayamitha eziqhelekileyo ziquka ii-intshi ezi-2, ii-intshi ezi-4, ii-intshi ezi-6, kunye nee-intshi ezi-8 ezingakumbi kwimveliso ephezulu.

Umbuzo 7: I-SiC Epitaxial Wafer iyichaphazela njani indleko kunye nokusebenza kakuhle?
Nangona ekuqaleni ibiza kakhulu kune-silicon, i-SiC Epitaxial Wafer iyanciphisa ubungakanani benkqubo kunye nokulahleka kwamandla, nto leyo ephucula ukusebenza kakuhle kweendleko kwixesha elide.

  • Ngaphambili:
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