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I-SiC Epitaxial Wafer yeZixhobo zoMbane-4H-SiC, uhlobo lwe-N, Uxinaniso oluphantsi lwesiphene

I-SiC Epitaxial Wafer yeZixhobo zoMbane-4H-SiC, uhlobo lwe-N, Uxinaniso oluphantsi loMfanekiso oMfaniswayo
  • I-SiC Epitaxial Wafer yeZixhobo zoMbane-4H-SiC, uhlobo lwe-N, Uxinaniso oluphantsi lwesiphene
  • I-SiC Epitaxial Wafer yeZixhobo zoMbane-4H-SiC, uhlobo lwe-N, Uxinaniso oluphantsi lwesiphene
  • I-SiC Epitaxial Wafer yeZixhobo zoMbane-4H-SiC, uhlobo lwe-N, Uxinaniso oluphantsi lwesiphene

Inkcazelo emfutshane:

I-SiC Epitaxial Wafer isisiseko sezixhobo zanamhlanje eziphezulu ze-semiconductor, ngakumbi ezo zenzelwe amandla aphezulu, amandla aphezulu, kunye nokusebenza okuphezulu kobushushu. Ngokufutshane kwiSilicon Carbide Epitaxial Wafer, iSiC Epitaxial Wafer inomgangatho ophezulu, obhityileyo weSiC epitaxial layer ekhule phezu kweSiC substrate enkulu. Ukusetyenziswa kwetekhnoloji ye-SiC Epitaxial Wafer ikhula ngokukhawuleza kwizithuthi zombane, iigridi ezihlakaniphile, iinkqubo zamandla avuselelekayo, kunye ne-aerospace ngenxa yeempawu zayo eziphezulu zomzimba kunye ne-elektroniki xa kuthelekiswa neewafers eziqhelekileyo ezisekelwe kwi-silicon.


Iimbonakalo

Idayagram eneenkcukacha

I-SiC Epitaxial Wafer-4
SiC Epitaxial Wafer-6 - 副本

Intshayelelo

I-SiC Epitaxial Wafer isisiseko sezixhobo zanamhlanje eziphezulu ze-semiconductor, ngakumbi ezo zenzelwe amandla aphezulu, amandla aphezulu, kunye nokusebenza okuphezulu kobushushu. Ngokufutshane kwiSilicon Carbide Epitaxial Wafer, iSiC Epitaxial Wafer inomgangatho ophezulu, obhityileyo weSiC epitaxial layer ekhule phezu kweSiC substrate enkulu. Ukusetyenziswa kwetekhnoloji ye-SiC Epitaxial Wafer ikhula ngokukhawuleza kwizithuthi zombane, iigridi ezihlakaniphile, iinkqubo zamandla avuselelekayo, kunye ne-aerospace ngenxa yeempawu zayo eziphezulu zomzimba kunye ne-elektroniki xa kuthelekiswa neewafers eziqhelekileyo ezisekelwe kwi-silicon.

Imigaqo yokwenziwa kweSiC Epitaxial Wafer

Ukudala i-SiC Epitaxial Wafer idinga inkqubo elawulwa kakhulu ye-chemical vapor deposition (CVD). I-epitaxial layer ikhula ngokuqhelekileyo kwi-monocrystalline SiC substrate isebenzisa iigesi ezifana ne-silane (SiH₄), ipropane (C₃H₈), kunye ne-hydrogen (H₂) kumaqondo okushisa angaphezu kwe-1500 ° C. Oku kukhula kwe-epitaxial ephezulu yokushisa kuqinisekisa ukulungelelaniswa kwe-crystalline okugqwesileyo kunye neziphene ezincinci phakathi kwe-epitaxial layer kunye ne-substrate.

Inkqubo ibandakanya amanqanaba angundoqo aliqela:

  1. Ukulungiswa kweSubstrate: Isiseko se-SiC wafer siyacocwa kwaye sigudiswe ukuguda kweathomu.

  2. Ukukhula kweCVD: Kwi-reactor high-purity reactor, iigesi ziphendula ukufaka i-single-crystal SiC layer kwi-substrate.

  3. Ulawulo lweDoping: Uhlobo lwe-N okanye i-P-type doping iqaliswa ngexesha le-epitaxy ukufezekisa izinto ezifunwayo zombane.

  4. Ukuhlolwa kunye neMetrology: Imakroskopu yamehlo, i-AFM, kunye ne-X-ray diffraction zisetyenziselwa ukungqinisisa ubukhulu bomaleko, ugxininiso lwe-doping, kunye nokuxinana kwesiphene.

I-SiC Epitaxial Wafer nganye ijongwa ngononophelo ukuze kugcinwe ukunyamezelana okuqinileyo kwi-uniformity, ukuvuleka komphezulu, kunye nokumelana. Ukukwazi ukulungisa kakuhle ezi parameters kubalulekile kwii-MOSFETs ezinombane ophezulu, ii-Schottky diodes, kunye nezinye izixhobo zamandla.

Inkcazo

Ipharamitha Inkcazo
Iindidi Inzululwazi yeMathiriyeli, iiSubstrates zeCrystal enye
Polytype 4H
Doping N Uhlobo
Ububanzi 101 mm
Ukunyamezela kwe-Diameter ± 5%
Ukutyeba 0.35 mm
Ukutyeba Ukunyamezela ± 5%
Ubude beFlethi obuPhambili 22 mm (± 10%)
I-TTV (Ukwahluka koButyebe bubonke) ≤10µm
I-Wap ≤25µm
FWHM ≤30 Arc-sec
Umphezulu Gqiba Rq ≤0.35 nm

Usetyenziso lweSiC Epitaxial Wafer

Iimveliso zeSiC Epitaxial Wafer ziyimfuneko kumacandelo amaninzi:

  • Izithuthi zoMbane (EVs): Izixhobo ezisekelwe kwi-SiC Epitaxial Wafer zandisa ukusebenza kwe-powertrain kunye nokunciphisa ubunzima.

  • Umoya ovuselelekayo: Isetyenziswa kwii-inverters kwiinkqubo zamandla elanga nezomoya.

  • Izibonelelo zaMandla kuShishino: Yenza i-high-frequency, i-high-temperature switching kunye nelahleko ephantsi.

  • I-Aerospace kunye noKhuseleko: Ilungele imeko ezingqongileyo ezifuna iisemiconductors ezomeleleyo.

  • Izitishi ezisisiseko ze-5G: Amacandelo eSiC Epitaxial Wafer axhasa ukuxinana kwamandla aphezulu kwizicelo zeRF.

I-SiC Epitaxial Wafer yenza uyilo olubambeneyo, utshintsho olukhawulezayo, kunye nokusebenza kakuhle koguqulo lwamandla xa kuthelekiswa neewafers zesilicon.

Izinto ezilungileyo zeSiC Epitaxial Wafer

Itekhnoloji yeSiC Epitaxial Wafer ibonelela ngeenzuzo ezibalulekileyo:

  1. Ukuqhekeka okuphezulu kweVoltage: Imelana nombane ukuya kuthi ga kumaxesha ali-10 aphezulu kunee-Si wafers.

  2. I-Thermal Conductivity: I-SiC Epitaxial Wafer ichitha ubushushu ngokukhawuleza, ivumela izixhobo ukuba ziqhube zipholile kwaye zithembeke ngakumbi.

  3. Izantya eziphezulu zokutshintsha: Ilahleko ezisezantsi zokutshintsha zivumela ukusebenza okuphezulu kunye ne-miniaturization.

  4. Bandgap ebanzi: Iqinisekisa uzinzo kumbane ophezulu kunye namaqondo obushushu.

  5. Ukomelela kwezinto eziphathekayo: I-SiC yi-inert yekhemikhali kwaye yomelele ngoomatshini, ilungele usetyenziso olufunayo.

Ezi zibonelelo zenza i-SiC Epitaxial Wafer ibe yinto ekhethiweyo kwisizukulwana esilandelayo se-semiconductors.

FAQ: SiC Epitaxial Wafer

I-Q1: Uthini umahluko phakathi kwe-SiC wafer kunye ne-SiC Epitaxial Wafer?
I-wafer ye-SiC ibhekiselele kwi-substrate enkulu, ngelixa i-SiC Epitaxial Wafer iquka umaleko okhuliswe ngokukodwa osetyenziselwa ukuveliswa kwesixhobo.

Q2: Bubuphi ubungqingqwa obukhoyo kwi-SiC Epitaxial Wafer layers?
Iimaleko ze-Epitaxial ngokuqhelekileyo ziqala ukusuka kwi-micrometers ezimbalwa ukuya ngaphezu kwe-100 μm, kuxhomekeke kwiimfuno zesicelo.

I-Q3: Ngaba i-SiC Epitaxial Wafer ifanelekile kwiindawo ezinobushushu obuphezulu?
Ewe, i-SiC Epitaxial Wafer inokusebenza kwiimeko ezingaphezulu kwe-600 ° C, igqithise i-silicon kakhulu.

I-Q4: Kutheni ukuxinana kwesiphene kubalulekile kwiSiC Epitaxial Wafer?
Uxinaniso lwesiphene esisezantsi luphucula ukusebenza kwesixhobo kunye nesivuno, ngakumbi kwizicelo ezinombane ophezulu.

I-Q5: Ngaba uhlobo lwe-N kunye nohlobo lwe-P lweSiC Epitaxial Wafers zombini ziyafumaneka?
Ewe, zombini iintlobo ziveliswa kusetyenziswa ulawulo oluchanekileyo lwegesi ye-dopant ngexesha lenkqubo ye-epitaxial.

Q6: Zeziphi iisayizi zewafer ezisemgangathweni zeSiC Epitaxial Wafer?
Iidayamitha eziqhelekileyo zibandakanya i-intshi ezi-2, i-intshi e-4, i-intshi eyi-6, kwaye iya isanda i-8-intshi yokuvelisa umthamo ophezulu.

Q7: Ingaba iSiC Epitaxial Wafer inefuthe njani kwiindleko kunye nokusebenza kakuhle?
Ngelixa ekuqaleni zibiza kakhulu kune-silicon, i-SiC Epitaxial Wafer inciphisa ubungakanani benkqubo kunye nokulahleka kwamandla, ukuphucula ukusebenza kakuhle kweendleko kwixesha elide.

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