SiC ceramic tray plate ipleyiti ene-CVD SiC yokwambathisa izixhobo
I-silicon carbide ceramics ayisetyenziswanga kuphela kwinqanaba lokubeka ifilimu ebhityileyo, efana ne-epitaxy okanye i-MOCVD, okanye kwi-wafer processing, entliziyweni apho iitreyi ze-wafer carrier ze-MOCVD zithotyelwa kuqala kwindawo yokubeka, kwaye ke ngoko zixhathisa kakhulu. ukushisa kunye ne-corrosion.Izithuthi ze-SiC-coated nazo zine-conductivity ephezulu ye-thermal kunye neempawu ezibalaseleyo zokusasazwa kwe-thermal.
Ukubekwa kweMichiza enyulu yoMphunga weSilicon Carbide (CVD SiC) izithwali zewafer zobushushu obuphezulu iMetal Organic Chemical Vapor Deposition (MOCVD) processing.
Abathwali be-wafer ye-CVD ye-SiC esulungekileyo yongamile kakhulu kunezo zithwala ze-wafer zesiqhelo ezisetyenziswa kule nkqubo, eziyigraphite kwaye ziqatywe ngomaleko we-CVD SiC. ezi zithwali zigqunywe zisekwe kwigraphite azikwazi ukumelana namaqondo obushushu aphezulu (1100 ukuya kwi-1200 degrees celcius) afunekayo ukuze kubekwe i-GaN yokukhanya okuphakamileyo kwanamhlanje okuluhlaza namhlophe. Amaqondo obushushu aphezulu abangela ukuba umgquba ube nemingxunya emincinci apho imichiza ikhukulisa igraphite ngaphantsi. Amasuntswana egraphite ke agqabhuka aze angcolise i-GaN, nto leyo ebangela ukuba isithwali se-wafer esicandiweyo sitshintshwe.
I-CVD SiC inobunyulu be-99.999% okanye ngaphezulu kwaye ine-conductivity ephezulu ye-thermal kunye ne-thermal shock resistance. Ke ngoko, inokumelana namaqondo obushushu aphezulu kunye neemeko ezirhabaxa zokuqaqamba okuphezulu kwemveliso ye-LED. Yimpahla eqinileyo ye-monolithic efikelela kuxinaniso lwethiyori, ivelisa amasuntswana amancinci, kwaye ibonisa ukubola okuphezulu kakhulu kunye nokumelana nokukhukuliseka. Izinto eziphathekayo zinokutshintsha i-opacity kunye ne-conductivity ngaphandle kokuzisa ukungcola kwesinyithi. Izithwali zeWafer ziqhelekile ukuba yi-intshi ezili-17 ububanzi kwaye zinokubamba ukuya kuma kwi-40 2-4 intshi zamawafa.