SiC ceramic tray plate ipleyiti ene-CVD SiC yokwambathisa izixhobo

I-Silicon carbide ceramics ayisetyenziswanga kuphela kwiqonga elincinci lokubeka ifilimu, njenge-epitaxy okanye i-MOCVD, okanye kwi-wafer processing, entliziyweni apho iitreyi ze-wafer carrier ze-MOCVD zithotyelwe kuqala kwindawo yokubeka, kwaye ngoko ke zixhathisa kakhulu ukushisa kunye nokubola.

Ukubekwa kweMichiza enyulu yoMphunga weSilicon Carbide (CVD SiC) izithwali zewafer zobushushu obuphezulu iMetal Organic Chemical Vapor Deposition (MOCVD) processing.

Abathwali be-wafer ye-CVD ye-SiC esulungekileyo yongamile kakhulu kunezo zithwala ze-wafer zesiqhelo ezisetyenziswa kule nkqubo, eziyigraphite kwaye ziqatywe ngomaleko we-CVD SiC. ezi zithwali zigqunywe zisekwe kwigraphite azikwazi ukumelana namaqondo obushushu aphezulu (1100 ukuya kwi-1200 degrees celcius) afunekayo ukuze kubekwe i-GaN yokukhanya okuphakamileyo kwanamhlanje okuluhlaza namhlophe. Amaqondo obushushu aphezulu abangela ukuba umgquba ube nemingxunya emincinci apho imichiza ikhukulisa igraphite ngaphantsi. Amasuntswana egraphite ke agqabhuka kwaye angcolise i-GaN, nto leyo ebangela ukuba isithwali se-wafer esicandiweyo sitshintshwe.

I-CVD SiC inobunyulu be-99.999% okanye ngaphezulu kwaye ine-conductivity ephezulu ye-thermal kunye ne-thermal shock resistance. Ke ngoko, inokumelana namaqondo obushushu aphezulu kunye neemeko ezirhabaxa zokuqaqamba okuphezulu kwemveliso ye-LED. Yimpahla eqinileyo ye-monolithic efikelela kuxinaniso lwethiyori, ivelisa amasuntswana amancinci, kwaye ibonisa ukubola okuphezulu kakhulu kunye nokumelana nokukhukuliseka. Izinto eziphathekayo zinokutshintsha i-opacity kunye ne-conductivity ngaphandle kokuzisa ukungcola kwesinyithi. Izithwali zeWafer ziqhelekile ukuba yi-intshi ezili-17 ububanzi kwaye zinokubamba ukuya kuma kwi-40 2-4 intshi zamawafa.