I-graphite yetreyi ye-ceramic ye-SiC ene-CVD SiC coating yezixhobo

Iiceramics ze-silicon carbide azisetyenziswa kuphela kwinqanaba lokufakwa kwefilimu encinci, njenge-epitaxy okanye i-MOCVD, okanye ekucutshungulweni kwe-wafer, apho iitreyi ze-wafer ze-MOCVD ziqala ukufakwa kwindawo yokufakwa, kwaye ngenxa yoko zimelana kakhulu nobushushu kunye nokugqwala. Iinkampani ezifakwe i-SiC zikwane-conductivity ephezulu yobushushu kunye neempawu ezilungileyo zokusasazwa kobushushu.

Iinqanawa ze-wafer ze-Silicon Carbide (CVD SiC) zeChemical Vapor Deposition (MOCVD) ezishushu kakhulu ezisetyenziselwa ukucubungula iMetal Organic Chemical Vapor Deposition (MOCVD) ngobushushu obuphezulu.

Iimpahla ze-wafer ze-CVD SiC ezicocekileyo zingcono kakhulu kuneempahla ze-wafer eziqhelekileyo ezisetyenziswa kule nkqubo, eziyi-graphite kwaye zigqunywe ngomaleko we-CVD SiC. Ezi mpahla ze-wafer ezigqunywe nge-graphite azikwazi ukumelana namaqondo obushushu aphezulu (1100 ukuya kwi-1200 degrees Celsius) afunekayo ukuze kufakwe i-GaN kwi-led eluhlaza okwesibhakabhaka namhlophe ekhanyayo yanamhlanje. Amaqondo obushushu aphezulu abangela ukuba i-coating ivelise imingxunya emincinci apho iikhemikhali zenkqubo zitshabalalisa i-graphite engaphantsi. Amasuntswana e-graphite emva koko ayaqhekeka aze angcolise i-GaN, nto leyo ebangela ukuba i-wafer egqunywe nge-coating ithathelwe indawo.

I-CVD SiC inobunyulu obuyi-99.999% nangaphezulu kwaye inomoya ophezulu wokuqhuba ubushushu kunye nokumelana noxinzelelo lobushushu. Ke ngoko, inokumelana namaqondo obushushu aphezulu kunye neendawo ezinzima zokwenziwa kwe-LED ekhanyayo. Yinto eqinileyo ye-monolithic efikelela kuxinano lwethiyori, ivelise amasuntswana amancinci, kwaye ibonakalisa ukumelana nokugqwala okuphezulu kakhulu kunye nokumelana nokukhukuliseka. Le nto inokutshintsha ukungabonakali kunye nokuqhuba ngaphandle kokungenisa ukungcola kwesinyithi. Iimpahla ze-wafer zihlala zi-intshi ezili-17 ububanzi kwaye zinokubamba ukuya kuthi ga kwi-40 ii-wafers ze-intshi ezi-2-4.