I-SiC Ceramic Tray ye-Wafer Carrier enokumelana nobushushu obuphezulu
I-Silicon Carbide Ceramic Tray (iTreyi yeSiC).
Icandelo le-ceramic elisebenza kakhulu elisekelwe kwi-silicon carbide (SiC), eyenzelwe usetyenziso oluphezulu lwemizi-mveliso efana nokuveliswa kwe-semiconductor kunye nokuveliswa kwe-LED. Imisebenzi yayo ephambili ibandakanya ukusebenza njenge-wafer carrier, i-etching process platform, okanye inkxaso yenkqubo yobushushu obuphezulu, i-leveraging i-conductivity ekhethekileyo ye-thermal, ukumelana nobushushu obuphezulu, kunye nokuzinza kweekhemikhali ukuqinisekisa ukufana kwenkqubo kunye nemveliso yemveliso.
Iimpawu eziphambili
1. Ukusebenza kweThermal
- I-High Thermal Conductivity: 140–300 W/m·K, igqwesa ngokubonakalayo igraphite yesintu (85 W/m·K), eyenza ukutshatyalaliswa kobushushu ngokukhawuleza kunye nokunciphisa uxinzelelo lobushushu.
- I-Low Thermal Expansion Coefficient: 4.0×10⁻⁶/℃ (25–1000℃), ehambelana ngokusondeleyo nesilicon (2.6×10⁻⁶/℃), ukunciphisa imingcipheko ye-thermal deformation.
2. IiPropati zoomatshini
- Amandla aphezulu: Amandla e-Flexural ≥320 MPa (20℃), ukumelana noxinzelelo kunye nefuthe.
- Ukuqina okuphezulu: Ukuqina kwe-Mohs 9.5, okwesibini kuphela kwidayimane, enikezela ukuxhathisa okungaphezulu kokunxiba.
3. Uzinzo lweMichiza
- I-Corrosion Resistance: Ukumelana ne-acids ezomeleleyo (umzekelo, i-HF, i-H₂SO₄), ilungele imeko-bume yenkqubo yokufaka.
- I-Non-Magnetic: I-Intrinsic magnetic susceptibility <1×10⁻⁶ emu/g, ukuphepha ukuphazamisana nezixhobo ezichanekileyo.
4. Unyamezelo olugqithisileyo lokusiNgqongileyo
- Ukuqina kobushushu obuphezulu: Ubushushu bokusebenza ixesha elide ukuya kuthi ga kwi-1600-1900 ℃; ukuxhathisa ixesha elifutshane ukuya kuthi ga kwi-2200 ℃ (imeko-bume engena-oksijini).
- I-Thermal Shock Resistance: Imelana notshintsho olukhawulezileyo lobushushu (ΔT>1000℃) ngaphandle kokuqhekeka.
Usetyenziso
| Indawo yosetyenziso | Iimeko ezithile | Ixabiso loBugcisa |
| Ukwenziwa kweSemiconductor | I-Wafer etching (ICP), i-deposition-film deposition (MOCVD), i-CMP yokupolisha | I-high conductivity ye-thermal iqinisekisa amasimi afanayo obushushu; Ukwandiswa kwe-thermal ephantsi kunciphisa iwafer warpage. |
| Ukuveliswa kwe-LED | Ukukhula kwe-Epitaxial (umzekelo, i-GaN), i-wafer dicing, ukupakishwa | Icinezela iziphene zeentlobo ezininzi, iphucula ukusebenza kakuhle kokukhanya kwe-LED kunye nexesha lokuphila. |
| Ishishini lePhotovoltaic | Iziko leSilicon wafer sintering, izixhobo ze-PECVD zixhasa | Ubushushu obuphezulu kunye nokumelana nokothuka kwe-thermal kwandisa ubomi besixhobo. |
| ILaser kunye neOptics | Amandla aphezulu okupholisa i-laser substrates, i-optical system ixhasa | I-conductivity ephezulu ye-thermal yenza ukutshatyalaliswa kobushushu ngokukhawuleza, ukuzinzisa amacandelo optical. |
| Izixhobo zokuHlalutya | TGA/DSC abanini isampulu | Umthamo wokushisa ophantsi kunye nokuphendula ngokukhawuleza kwe-thermal kuphucula ukuchaneka komlinganiselo. |
Izinto eziluncedo kwiMveliso
- Ukusebenza okuBanzi: Ukuhanjiswa kwe-Thermal, amandla, kunye nokumelana nomhlwa kungaphezulu kakhulu kwe-alumina kunye ne-silicon nitride ceramics, ukuhlangabezana neemfuno zokusebenza ezigqithisileyo.
- Uyilo oluKhala: Uxinzelelo lwe-3.1–3.2 g/cm³ (40% yentsimbi), ukunciphisa umthwalo ongasebenziyo kunye nokuphucula ukuchaneka kwentshukumo.
- Ubomi obude kunye nokuthembeka: Ubomi benkonzo budlula iminyaka emi-5 kwi-1600 ℃, ukunciphisa ixesha lokuphumla kunye nokuthoba iindleko zokusebenza ngama-30%.
- Ukwenziwa ngokwezifiso: Ixhasa iijiyometri ezintsonkothileyo (umzekelo, iikomityi ezifunxayo ezinabileyo, iitreyi ezinomaleko amaninzi) ezinempazamo yobude obungaphantsi kwe-15 μm yosetyenziso oluchanekileyo.
Iinkcukacha zobuGcisa
| Uluhlu lweParameter | Isalathisi |
| IiPropati zoMzimba | |
| Ukuxinana | ≥3.10 g/cm³ |
| Amandla e-Flexural (20℃) | 320–410 MPa |
| I-Thermal Conductivity (20℃) | 140–300 W/(m·K) |
| Ukwandiswa kweNgcaciso yoMmandla (25–1000℃) | 4.0×10⁻⁶/℃ |
| IiPropati zeKhemikhali | |
| Ukumelana ne-Acid (HF/H₂SO₄) | Akukho mhlwa emva kokuntywiliselwa iiyure ezingama-24 |
| Ukuchaneka koMatshini | |
| Ukucaba | ≤15 μm (300×300 mm) |
| Uburhabaxa boMphezulu (Ra) | ≤0.4 μm |
Iinkonzo ze-XKH
I-XKH ibonelela ngezisombululo ezibanzi zamashishini ezithatha uphuhliso lwesiko, ukuchaneka komatshini, kunye nolawulo olungqongqo lobulunga. Kuphuhliso lwesiko, ibonelela ngococeko oluphezulu (> 99.999%) kunye nezisombululo zemathiriyeli ze-porous (30-50% porosity), ezidityaniswe nemodeli ye-3D kunye nokulinganisa ukwenza iijometri ezintsonkothileyo zezicelo ezinjenge-semiconductors kunye ne-aerospace. Ukwenziwa komatshini ngokuchanekileyo kulandela inkqubo elungelelanisiweyo: ukusetyenzwa komgubo → ukucofa isostatic/okomileyo → 2200°C sintering → CNC/diamond grinding → ukuhlolwa, ukuqinisekisa ukugujwa komgangatho wenanometer kunye ±0.01 mm unyamezelo lwedimensional. Ulawulo lomgangatho lubandakanya uvavanyo lwenkqubo epheleleyo (ukwakheka kwe-XRD, ulwakhiwo lwe-SEM, ukugoba amanqaku ama-3) kunye nenkxaso yobugcisa (ukulungiswa kwenkqubo, ukubonisana kwe-24/7, ukuhanjiswa kwesampulu yeeyure ezingama-48), ukuhambisa izinto ezinokuthenjwa, ezisebenza kakhulu kwiimfuno eziphambili zemizi-mveliso.
Imibuzo Ebuzwa Rhoqo (FAQ)
1. Q: Ngawaphi amashishini asebenzisa iitreyi ze-silicon carbide ceramic?
A: Isetyenziswa kakhulu kwimveliso ye-semiconductor (i-wafer handling), amandla elanga (iinkqubo ze-PECVD), izixhobo zonyango (izixhobo ze-MRI), kunye ne-aerospace (indawo ezinobushushu obuphezulu) ngenxa yokumelana nobushushu obugqithisileyo kunye nokuzinza kweekhemikhali.
2. Umbuzo: I-silicon carbide iyigqwesa njani iquartz/itreyi zeglasi?
A: Ukumelana nokothuka kwe-thermal ephezulu (ukuya kuthi ga kwi-1800 ° C vs. i-quartz's 1100 ° C), uphazamiseko lwemagnethi, kunye nobomi obude (iminyaka emi-5+ ngokuchasene neenyanga ezi-6-12 zequartz).
3. Umbuzo: Ngaba iitreyi ze-silicon ze-carbide ziyakwazi ukujongana neendawo ezineasidi?
A: Ewe. Ukumelana ne-HF, i-H2SO4, kunye ne-NaOH, kunye ne-<0.01mm i-corrosion/unyaka, ibenza ukuba bafanelekele ukufakwa kweekhemikhali kunye nokucoca i-wafer.
4. Q: Ngaba iitreyi ze-silicon carbide ziyahambelana ne-automation?
A: Ewe. Yenzelwe i-vacuum pickup kunye nokuphathwa kwerobhothi, kunye nokukhanya komphezulu <0.01mm ukunqanda ukungcoliseka kwamasuntswana kwiilaphu ezizenzekelayo.
5. Umbuzo: Ithini indleko yokuthelekisa izinto zemveli?
A: Iindleko eziphezulu zangaphambili (i-3-5x quartz) kodwa i-30-50% iphantsi kwe-TCO, ngenxa yobude bobomi obongezelelweyo, ixesha lokuphumla elincitshisiweyo, kunye nokongiwa kwamandla kwi-thermal conductivity ephezulu.
