I-SiC Ceramic Fork Arm / End Effector-Ukuphatha ngokuNgcono okuNqobileyo kwiSemiconductor Manufacturing

I-SiC Ceramic Fork Arm / I-Effecter End-Equipted Precision Hand for Semiconductor Manufacturing Image Featured

Inkcazelo emfutshane:

I-SiC Ceramic Fork Arm, edla ngokubizwa ngokuba yi-Ceramic End Effector, yinto ephezulu yokusingatha ngokuchanekileyo icandelo eliphuhliswe ngokukodwa ukuthuthwa kwe-wafer, ukulungelelaniswa, kunye nokubeka indawo kumashishini aphezulu, ngokukodwa ngaphakathi kwe-semiconductor kunye nemveliso ye-photovoltaic. Yenziwe kusetyenziswa i-silicon carbide ceramics yokucoceka okuphezulu, eli candelo lidibanisa amandla akhethekileyo omatshini, ukwanda kwe-thermal ephantsi, kunye nokuchasana okuphezulu kwi-thermal shock kunye ne-corrosion.

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Product Overview

Ngokungafaniyo neziphumo zesiqhelo ezenziwe nge-aluminiyam, intsimbi engenasici, okanye iquartz, izixhobo ze-SiC zeceramic zibonelela ngokusebenza okungenakuthelekiswa nanto kumagumbi okufunxa, amagumbi okucoca, kunye neemeko ezirhabaxa zokusetyenzwa, zibenza babe yinxalenye ephambili yesizukulwana esilandelayo sokuphatha iirobhothi. Ngokunyuka kwemfuno yemveliso engangcolisekiyo kunye nokunyamezelana okungqongqo kwi-chipmaking, ukusetyenziswa kwee-ceramic end effectors kuba ngumgangatho woshishino ngokukhawuleza.

UmGaqo wokuVelisa

Ukwenziwa kweI-SiC Ceramic End Effectersibandakanya ukuchaneka okuphezulu, iinkqubo ezicocekileyo eziqinisekisa ukusebenza kunye nokuqina. Iinkqubo ezimbini eziphambili zidla ngokusetyenziswa:

I-Reaction-Bonded Silicon Carbide (RB-SiC)

Kule nkqubo, i-preform eyenziwe kwi-silicon carbide powder kunye ne-binder ifakwe nge-silicon etyhidiweyo kumaqondo okushisa aphezulu (~ 1500 ° C), ephendula nge-carbon eseleyo ukuze yenze i-composite edibeneyo, eqinile ye-SiC-Si. Le ndlela ibonelela ngolawulo olubalaseleyo lwe-dimensional kwaye ineendleko ezisebenzayo kwimveliso enkulu.

I-Silicon Carbide engenaxinzelelo (SSiC)

I-SSiC yenziwe nge-sintering ultra-fine, high-purity SiC powder kumaqondo obushushu aphezulu kakhulu (>2000 ° C) ngaphandle kokusebenzisa izongezo okanye isigaba sokubopha. Oku kubangela imveliso ephantse ibe yi-100% yoxinaniso kunye neyona mpahla iphezulu yoomatshini kunye ne-thermal ekhoyo phakathi kwemathiriyeli ye-SiC. Ifanelekile kwi-ultra-critical wafer handling applications.

I-Post-Processing

Precision CNC Machining: Iphumeza ukucaba okuphezulu kunye nokuhambelana.
UkuQeda komphezulu: Ukugulisa idayimani kunciphisa uburhabaxa bomphezulu ukuya ku-<0.02 µm.
Ukuhlolwa: I-interferometry ye-Optical, i-CMM, kunye novavanyo olungonakalisi luqeshwe ukuqinisekisa isiqwenga ngasinye.

La manyathelo aqinisekisa ukuba iSiC isiphelo effectorinikezela ngokuchaneka kokubekwa kwe-wafer, ukucwangciswa okugqwesileyo, kunye nokuveliswa kwamasuntswana amancinci.

Iimpawu eziphambili kunye neeNzuzo

Uphawu	Inkcazo
Ubulukhuni obuphezulu	Ubunzima beVickers> 2500 HV, ukuxhathisa ukunxiba kunye nokuqhekeka.
Ukwandiswa kweThermal ephantsi	CTE ~4.5×10⁻⁶/K, eyenza uzinzo lwe-dimensional kwibhayisekile eshushu.
Ukunganyanzeli kweMichiza	Ukumelana ne-HF, i-HCl, iigesi zeplasma, kunye nezinye ii-agent ezitshabalalisayo.
Okugqwesileyo kweThermal Shock Resistance	Ifanelekile ukufudumeza ngokukhawuleza / ukupholisa kwi-vacuum kunye neenkqubo zesithando somlilo.
Ukuqina okuphezulu kunye nokomelela	Ixhasa iingalo zefolokhwe ezinde ze-cantilevered ngaphandle kokuphambuka.
Ukuchitha Okuphantsi	Ilungele i-ultra-high vacuum (UHV) imekobume.
ISO Class 1 Cleanroom Ready	Ukusebenza okungenamasuntswana kuqinisekisa ukuthembeka kwe-wafer.

Usetyenziso

I-SiC Ceramic Fork Arm / End Effector isetyenziswa ngokubanzi kumashishini afuna ukuchaneka okugqithisileyo, ukucoceka, kunye nokuchasana kweekhemikhali. Iimeko zesicelo eziphambili ziquka:

Ukwenziwa kweSemiconductor

Ukulayishwa kwe-Wafer / ukukhulula kwi-deposition (CVD, PVD), i-etching (RIE, i-DRIE), kunye neenkqubo zokucoca.
Uthutho lwe-robotic wafer phakathi kweFOUPs, iikhasethi, kunye nezixhobo zokusebenza.
Ukuphathwa kobushushu obuphezulu ngexesha lokucutshungulwa kwe-thermal okanye i-annealing.

Ukuveliswa kweeSeli ze-Photovoltaic

Ukuthuthwa okuthambileyo kwee-wafers ze-silicon ezibuthathaka okanye i-solar substrates kwimigca ezenzekelayo.

Imboniselo yePaneli eFlethi (FPD) Ishishini

Ukuhambisa iipaneli ezinkulu zeglasi okanye i-substrates kwindawo yemveliso ye-OLED/LCD.

I-Compound Semiconductor / MEMS

Isetyenziswe kwi-GaN, i-SiC, kunye ne-MEMS imigca yokwenza apho ulawulo longcoliseko kunye nokuchaneka kwendawo kubalulekile.

Indima yayo yesiphumo ibaluleke kakhulu ekuqinisekiseni ukuba akukho siphene, ukuphathwa okuzinzileyo ngexesha lemisebenzi ebuthathaka.

Ukukwazi ukwenza ngokwezifiso

Sinikezela ngohlengahlengiso olubanzi ukuhlangabezana nezixhobo ezahlukeneyo kunye neemfuno zenkqubo:

Uyilo lwefolokhwe: Iiprong ezimbini, iminwe emininzi, okanye uyilo lwenqanaba lokwahlulwa.
Ubungakanani beWafer Ukuhambelana: Ukusuka kwi-2 "ukuya kwi-12" iiwafers.
Ukunyuka kweInterface: Iyahambelana neengalo zerobhothi ze-OEM.
Ukutyeba kunye nokuNyamezelwa koMphezulu: Micron-level flatness kunye edge rounding ekhoyo.
Iimpawu ze-Anti-Slip: Ubume bomphezulu obukhethwayo okanye iingubo zokubambelela ngokukhuselekileyo.

NgamnyeI-ceramic end effectoriyilwe kunye nabathengi ukuqinisekisa ukufaneleka okuchanekileyo kunye notshintsho oluncinci lwezixhobo.

Imibuzo Ebuzwa Rhoqo (FAQ)

I-Q1: Ingcono njani i-SiC kune-quartz yesicelo sesiphumo sokuphela?
A1:Ngelixa i-quartz iqhele ukusetyenziselwa ubunyulu bayo, ayinabo ukuqina koomatshini kwaye ithanda ukuphuka phantsi komthwalo okanye ukothuka kobushushu. I-SiC inika amandla aphezulu, ukumelana nokunxiba, kunye nokuzinza kwe-thermal, ukunciphisa kakhulu umngcipheko wexesha lokuphumla kunye nomonakalo we-wafer.

I-Q2: Ngaba le ngalo yefolokhwe ye-ceramic iyahambelana nazo zonke iziphatho ze-robotic wafer?
A2:Ewe, izixhobo zethu zokugqibela ze-ceramic ziyahambelana nezona nkqubo ziphambili zokuphatha i-wafer kwaye zinokuhlengahlengiswa kwiimodeli zakho ezithile zerobhothi ngemizobo yobunjineli echanekileyo.

I-Q3: Ngaba inokuphatha ama-wafers angama-300 mm ngaphandle kokulwa?
A3:Ngokuqinisekileyo. Ukuqina okuphezulu kwe-SiC kuvumela nokuba iingalo ezicekethekileyo, ezinde zefolokhwe ukuba zibambe ii-wafers ezingama-300 mm ngokukhuselekileyo ngaphandle kokugoba okanye ukuphambuka ngexesha lokushukuma.

I-Q4: Yintoni ubomi benkonzo eqhelekileyo ye-SiC ceramic end effector?
A4:Ngokusetyenziswa ngokufanelekileyo, i-SiC end effector inokuhlala i-5 kumaxesha e-10 ixesha elide kune-quartz yendabuko okanye imodeli ye-aluminium, ngenxa yokuchasana kwayo kakuhle noxinzelelo lwe-thermal kunye nomatshini.

I-Q5: Ngaba unikezela ngokutshintshwa okanye iinkonzo zeprototyping ngokukhawuleza?
A5:Ewe, siyayixhasa imveliso yesampulu ekhawulezileyo kwaye sinikezela ngeenkonzo zokutshintsha ezisekelwe kwimizobo yeCAD okanye iinxalenye ezibuyiselwe umva kwizixhobo ezikhoyo.

Ngathi

I-XKH igxile kuphuhliso lobuchwepheshe obuphezulu, imveliso, kunye nokuthengiswa kweglasi ekhethekileyo yeglasi kunye nezinto ezintsha zekristale. Iimveliso zethu zisebenza ngombane obonakalayo, i-elektroniki yabathengi, kunye nomkhosi. Sinikezela ngezixhobo zeSapphire optical, iilensi zeselfowuni eziphathwayo, iiCeramics, LT, Silicon Carbide SIC, Quartz, kunye nesemiconductor crystal wafers. Ngobuchule bezakhono kunye nezixhobo ezibukhali, sigqwesa ekusetyenzweni kwemveliso engeyiyo eyomgangatho, sijonge ukuba lishishini eliphambili le-optoelectronic tech-tech.