Ingalo yeSiC Ceramic Fork / Isiphumo sokugqibela - Ukuphathwa okuNgcono okuPhambili koMveliso weSemiconductor

Ingalo/Isiphembeleli seSiC Ceramic Fork – Ukuphathwa okuNgcono okuPhambili kokwenziwa kweeSemiconductor Umfanekiso oPhambili

Inkcazo emfutshane:

I-SiC Ceramic Fork Arm, edla ngokubizwa ngokuba yiCeramic End Effector, yinxalenye yokuphatha ngokuchanekileyo esebenza kakuhle eyenzelwe ngokukodwa ukuthuthwa kwe-wafer, ukulungelelaniswa, kunye nokubekwa kwindawo kwimizi-mveliso yobuchwepheshe obuphezulu, ngakumbi kwimveliso ye-semiconductor kunye ne-photovoltaic. Yenziwe kusetyenziswa iiceramics ze-silicon carbide ezicocekileyo kakhulu, le nxalenye idibanisa amandla angaqhelekanga oomatshini, ukwanda kobushushu obuphantsi kakhulu, kunye nokumelana okuphezulu koxinzelelo lobushushu kunye nokugqwala.

Thumela i-imeyile kuthi

Iimbonakalo

Umzobo oneenkcukacha

Isishwankathelo seMveliso

Ngokungafaniyo nee-effectors zemveli ezenziwe nge-aluminium, intsimbi engagqwaliyo, okanye i-quartz, ii-effectors ze-ceramic ze-SiC zibonelela ngokusebenza okungenakuthelekiswa nanto kwiigumbi zokucoca, amagumbi okucoca, nakwiindawo ezinzima zokucubungula, nto leyo ezenza zibe yinxalenye ebalulekileyo yeerobhothi zokuphatha ii-wafer zesizukulwana esilandelayo. Ngenxa yokwanda kwemfuno yemveliso engenangcoliseko kunye nokunyamezelana okuqinileyo ekwenzeni ii-chip, ukusetyenziswa kwee-effectors ze-ceramic kuya kuba ngumgangatho weshishini ngokukhawuleza.

Umgaqo-nkqubo Wokuvelisa

Ukwenziwa kweIziphene zokuphela kweCeramic zeSiCibandakanya uthotho lweenkqubo ezichanekileyo nezicocekileyo eziqinisekisa ukusebenza kunye nokuqina. Iinkqubo ezimbini eziphambili zihlala zisetyenziswa:

I-Silicon Carbide eBonded Reaction (RB-SiC)

Kule nkqubo, i-preform eyenziwe ngomgubo we-silicon carbide kunye ne-binder ifakwa kwi-silicon enyibilikisiweyo kumaqondo obushushu aphezulu (~1500°C), ephendula kwi-residual carbon ukuze yenze i-SiC-Si composite eqinileyo neqinileyo. Le ndlela inika ulawulo oluhle kakhulu lobukhulu kwaye ixabisa kancinci kwimveliso enkulu.

I-Silicon Carbide engenaxinzelelo (SSiC)

I-SSiC yenziwa ngokususa umgubo we-SiC ocolekileyo kakhulu, ococekileyo kakhulu kumaqondo obushushu aphezulu kakhulu (>2000°C) ngaphandle kokusebenzisa izongezo okanye isigaba sokubopha. Oku kubangela imveliso enoxinano oluphantse lube yi-100% kunye neempawu eziphezulu zoomatshini kunye nobushushu ezikhoyo phakathi kwezinto ze-SiC. Ifanelekile kwiindlela zokuphatha i-wafer ezibalulekileyo kakhulu.

Ukucutshungulwa emva

Umatshini we-CNC ochanekileyo: Ifikelela kwindawo ethe tyaba nehambelanayo.
Ukugqitywa komphezulu: Ukupholisha idayimani kunciphisa uburhabaxa bomphezulu ukuya kuthi ga kwi-0.02 µm.
Uhlolo: Uvavanyo lwe-Optical interferometry, i-CMM, kunye novavanyo olungonakalisiyo luyasetyenziswa ukuqinisekisa isiqwenga ngasinye.

La manyathelo aqinisekisa ukubaIsiphelisi sokuphela kweSiCinika ukuchaneka kokubekwa kwe-wafer rhoqo, ulungelelwaniso oluhle kakhulu, kunye nokuveliswa kwamasuntswana amancinci.

Iimpawu eziphambili kunye neenzuzo

Uphawu	Inkcazo
Ubunzima obuphezulu kakhulu	Ubunzima beVickers > 2500 HV, bumelana nokuguguleka nokuqhekeka.
Ukwanda Okuphantsi Kobushushu	I-CTE ~4.5×10⁻⁶/K, ivumela uzinzo olulinganayo kwi-thermal cycle.
Ukungasebenzi kakuhle kweekhemikhali	Ayimelani ne-HF, i-HCl, iigesi zeplasma, kunye nezinye izinto ezibangela ukubola.
Ukumelana kakuhle nobushushu	Ifanelekile ukufudumeza/ukupholisa ngokukhawuleza kwiinkqubo ze-vacuum kunye ne-furnace.
Ukuqina Okuphezulu kunye namandla	Ixhasa iingalo zefolokhwe ezinde ezinee-cantilevered ngaphandle kokujika.
Ukungakhathali	Ilungele iindawo ezine-vacuum ephezulu kakhulu (UHV).
I-ISO Class 1 Cleanroom ilungile	Ukusebenza okungenazo iinxalenye kuqinisekisa ukuthembeka kwe-wafer.

Izicelo

I-SiC Ceramic Fork Arm / End Effector isetyenziswa kakhulu kumashishini afuna ukuchaneka okugqithisileyo, ucoceko, kunye nokumelana neekhemikhali. Iimeko eziphambili zokusetyenziswa ziquka:

Ukuveliswa kweeSemiconductor

Ukulayisha/ukukhulula iwafer kwindawo yokufaka (i-CVD, i-PVD), ukukrola (i-RIE, i-DRIE), kunye neenkqubo zokucoca.
Ukuthuthwa kwe-wafer yerobhothi phakathi kwee-FOUP, iikhasethi, kunye nezixhobo zenkqubo.
Ukuphathwa kobushushu obuphezulu ngexesha lokucubungula ubushushu okanye ukufakelwa kwe-annealing.

Ukuveliswa kweeSeli zePhotovoltaic

Ukuthuthwa okuthambileyo kwee-wafers ze-silicon ezibuthathaka okanye ii-substrates zelanga kwimigca ezenzekelayo.

Imboni yeFlat Panel Display (FPD)

Ukuhambisa iiphaneli ezinkulu zeglasi okanye ii-substrates kwiindawo zemveliso ze-OLED/LCD.

I-Compound Semiconductor / MEMS

Isetyenziswa kwimigca yokwenziwa kweGaN, SiC, kunye neMEMS apho ulawulo longcoliseko kunye nokuchaneka kokubekwa kwayo kubalulekile.

Indima yayo yomphumo wokugqibela ibaluleke kakhulu ekuqinisekiseni ukuba ayiphazami kwaye ayiguquguquki xa kusenziwa imisebenzi enobuzaza.

Amandla okwenza ngokwezifiso

Sinikezela ngokwezifiso ezininzi ukuhlangabezana neemfuno ezahlukeneyo zezixhobo kunye neenkqubo:

Uyilo lwefoloko: Uyilo olunezikhonkwane ezimbini, oluneminwe emininzi, okanye olunemigangatho eyahlulweyo.
Ukuhambelana kobungakanani beWafer: Ukusuka kwiiwafers ezi-2” ukuya kwi-12”.
Iindawo zoNxibelelwano zokuFaka: Iyahambelana neengalo zerobhothi ze-OEM.
Ubukhulu kunye nokunyamezelana komphezulu: Ukuthe tyaba kwinqanaba le-micron kunye nokujikeleziswa komphetho kuyafumaneka.
Iimpawu zokungatyibiliki: Ubume bomphezulu obunganyanzelekanga okanye ukugqunywa ukuze kubambeke kakuhle i-wafer.

Ngamnyeisiphembeleli sokuphela kweseramikhiyenzelwe kunye nabathengi ukuqinisekisa ukulingana ngokuchanekileyo kunye notshintsho oluncinci lwezixhobo.

Imibuzo Ebuzwa Rhoqo (Imibuzo Ebuzwa Rhoqo)

Q1: Ingcono njani iSiC kunequartz kwisicelo somphumo wokugqibela?
A1:Nangona i-quartz isetyenziswa kakhulu ngenxa yobumsulwa bayo, ayinabo ukuqina koomatshini kwaye ithambekele ekuphukeni phantsi komthwalo okanye ubushushu. I-SiC inika amandla angcono, ukumelana nokuguguleka, kunye nozinzo lobushushu, okunciphisa kakhulu umngcipheko wokungasebenzi kunye nomonakalo we-wafer.

Umbuzo 2: Ngaba le ngalo yefork yeseramikhi iyahambelana nazo zonke izixhobo zokuphatha iiwafer zerobhothi?
A2:Ewe, izixhobo zethu zokuphelisa i-ceramic ziyahambelana neenkqubo ezininzi zokuphatha ii-wafer kwaye zinokuhlengahlengiswa kwiimodeli zakho zerobhothi ezithile ngemizobo yobunjineli echanekileyo.

Umbuzo 3: Ngaba ingaphatha ii-wafers ezingama-300 mm ngaphandle kokugoba?
A3:Ngokuqinisekileyo. Ukuqina okuphezulu kweSiC kuvumela nokuba iingalo ezibhityileyo nezinde zefolokhwe ukuba zibambe ii-wafers ezingama-300 mm ngokukhuselekileyo ngaphandle kokugoba okanye ukuphambuka ngexesha lokushukuma.

Q4: Ingakanani ixesha eliqhelekileyo lokusebenza kwe-SiC ceramic end effect?
A4:Xa isetyenziswa ngokufanelekileyo, i-SiC end effector inokuhlala ixesha elide ngokuphindwe kahlanu ukuya kwi-10 kuneemodeli ze-quartz okanye ze-aluminium zemveli, ngenxa yokumelana kwayo kakuhle noxinzelelo lobushushu nolwe-mechanical.

Umbuzo 5: Ngaba ninikezela ngeenkonzo zokutshintsha okanye zokulinganisa ngokukhawuleza?
A5:Ewe, siyayixhasa imveliso yesampulu ekhawulezileyo kwaye sinikezela ngeenkonzo zokutshintsha ngokusekelwe kwimizobo yeCAD okanye kwiindawo eziguqulwe ngasemva ezivela kwizixhobo ezikhoyo.

Ngathi

I-XKH igxile kuphuhliso lobuchwepheshe obuphezulu, imveliso, kunye nokuthengiswa kweglasi ekhethekileyo ye-optical kunye nezixhobo ezintsha zekristale. Iimveliso zethu zibonelela nge-optical electronics, i-consumer electronics, kunye ne-military. Sinikezela nge-Sapphire optical components, ii-mobile phone lens covers, i-Ceramics, i-LT, i-Silicon Carbide SIC, i-Quartz, kunye ne-semiconductor crystal wafers. Ngobuchule obunobuchule kunye nezixhobo eziphambili, sigqwesile ekucutshungulweni kwemveliso okungaqhelekanga, sijolise ekubeni yishishini eliphambili le-optoelectronic materials high-tech.